SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · Low On-Resistance A Low Gate Threshold Voltage D Low Input Capacitance B Low Input/Output Leakage C G TOP VIEW S Lead Free/RoHS Compliant (Note 3) D E G Qualified to AEC-Q101 Standards for High Reliability H Mechanical Data · · SOT-23 Fast Switching Speed K Case: SOT-23 J Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · · Terminal Connections: See Diagram M L Drain Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Gate Marking (See Page 2): K38 Ordering & Date Code Information: See Page 2 Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0° 8° All Dimensions in mm Source Weight: 0.008 grams (approximate) Maximum Ratings Dim @ TA = 25°C unless otherwise specified Symbol BSS138 Units Drain-Source Voltage Characteristic VDSS 50 V Drain-Gate Voltage RGS £ 20KW VDGR 50 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current Continuous ID 200 mA Pd 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 50 75 ¾ V VGS = 0V, ID = 250mA Zero Gate Voltage Drain Current IDSS ¾ ¾ 0.5 µA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS ¾ ¾ ±100 nA VGS = ±20V, VDS = 0V VGS(th) 0.5 1.2 1.5 V VDS = VGS, ID = 250mA RDS (ON) ¾ 1.4 3.5 W VGS = 10V, ID = 0.22A gFS 100 ¾ ¾ mS Input Capacitance Ciss ¾ ¾ 50 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 8.0 pF Turn-On Delay Time tD(ON) ¾ ¾ 20 ns Turn-Off Delay Time tD(OFF) ¾ ¾ 20 ns OFF CHARACTERISTICS (Note 2) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = 25V, ID = 0.2A, f = 1.0KHz DYNAMIC CHARACTERISTICS VDS = 10V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Notes: VDD = 30V, ID = 0.2A, RGEN = 50W 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 3. No purposefully added lead. DS30144 Rev. 11 - 2 1 of 5 www.diodes.com BSS138 ã Diodes Incorporated Ordering Information Notes: (Note 4) Device Packaging Shipping BSS138-7-F SOT-23 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K38 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K38 Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 0.6 VGS = 3.5V ID, DRAIN-SOURCE CURRENT (A) Tj = 25°C 0.5 VGS = 3.25V 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.2 VGS = 2.5V 0.1 0 0 2 1 3 5 4 6 7 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage ID, DRAIN-SOURCE CURRENT (A) 0.8 VDS = 1V 0.7 -55°C 0.6 25°C 0.5 150°C 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics DS30144 Rev. 11 - 2 2 of 5 www.diodes.com BSS138 2.45 2.25 2.05 VGS = 10V ID = 0.5A 1.85 1.65 1.45 VGS = 4.5V ID = 0.075A 1.25 1.05 0.85 0.65 -55 45 -5 95 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature VGS(th), GATE THRESHOLD VOLTAGE (V) 2 1.8 1.6 ID = 1.0mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -55 -40 -25 -10 5 20 35 50 65 80 95 110 125 140 RDS(ON), DRAIN-SOURCE ON RESISTANCE (W) Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature 8 7 150°C VGS = 2.5V 6 5 25°C 4 3 -55°C 2 1 0 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN CURRENT (A) Fig. 5 Drain-Source On Resistance vs. Drain Current DS30144 Rev. 11 - 2 3 of 5 www.diodes.com BSS138 9 8 VGS = 2.75V 7 6 150°C 5 4 25°C 3 2 -55°C 1 0 0.1 0.05 0 0.15 0.25 0.2 ID, DRAIN CURRENT (A) Fig. 6 Drain-Source On Resistance vs. Drain Current 6 VGS = 4.5V 5 150°C 4 3 2 25°C 1 -55°C 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.45 0.4 0.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Drain-Source On Resistance vs. Drain Current 3.5 VGS = 10V 3 150°C 2.5 2 1.5 25°C 1 -55°C 0.5 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain Current DS30144 Rev. 11 - 2 4 of 5 www.diodes.com BSS138 ID, DIODE CURRENT (A) 1 0.1 150°C -55°C 0.01 25°C 0.001 0 0.2 0.4 0.6 0.8 1.2 1 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 100 C, CAPACITANCE (pF) VGS = 0V f = 1MHz CiSS 10 COSS CrSS 1 0 5 10 15 20 25 30 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain Source Voltage IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30144 Rev. 11 - 2 5 of 5 www.diodes.com BSS138