Vishay DG418BAK/883 Precision cmos analog switch Datasheet

DG417B/418B/419B
New Product
Vishay Siliconix
Precision CMOS Analog Switches
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
"15-V Analog Signal Range
On-Resistance—rDS(on): 15 Fast Switching Action—tON: 100 ns
TTL and CMOS Compatible
MSOP-8 and SOIC-8 Packaging
Wide Dynamic Range
Low Signal Errors and Distortion
Break-Before-Make Switching Action
Simple Interfacing
Reduced Board Space
Improved Reliability
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample-and-Hold Circuits
Military Radios
Guidance and Control Systems
Hard Disk Drives
DESCRIPTION
The DG417B/418B/419B monolithic CMOS analog switches
were designed to provide high performance switching of
analog signals. Combining low power, low leakages, high
speed, low on-resistance and small physical size, the DG417B
series is ideally suited for portable and battery
powered industrial and military applications requiring high
performance and efficient use of board space.
high voltage silicon gate (HVSG) process. Break-before-make
is guaranteed for the DG419B, which is an SPDT
configuration. An epitaxial layer prevents latchup.
To achieve high-voltage ratings and superior switching
performance, the DG417B series is built on Vishay Siliconix’s
The DG417B and DG418B respond to opposite control logic
levels as shown in the Truth Table.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417B
Dual-In-Line, SOIC-8 and MSOP-8
S
1
8
D
NC
2
7
V-
GND
3
6
IN
V+
4
5
VL
TRUTH TABLE
Logic
DG417B
DG418B
0
ON
OFF
1
OFF
ON
Logic “0” = v 0.8 V, Logic “1” = w 2.4 V
Top View
DG419B
Dual-In-Line, SOIC-8 and MSOP-8
D
1
8
S2
S1
2
7
V-
GND
V+
6
3
5
4
IN
VL
TRUTH TABLEDG419B
Logic
SW1
SW2
0
ON
OFF
1
OFF
ON
Logic “0” = v 0.8 V, Logic “1” = w 2.4 V
Top View
Document Number: 72107
S-31538—Rev. B, 11-Aug-03
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1
DG417B/418B/419B
New Product
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
Part Number
DG417B/418B
DG417BDJ
8 Pin Plastic MiniDIP
8-Pin
DG418BDJ
DG417BDY
- 40 to 85_C
8 Pin Narrow SOIC
8-Pin
DG418BDY
DG417BDQ
8 Pin MSOP
8-Pin
DG418BDQ
DG417BAK, DG417BAK/883
- 55 to 125_C
8 Pin CerDIP
8-Pin
DG418BAK, DG418BAK/883
DG419B
- 40 to 85_C
- 55 to 125_C
8-Pin Plastic MiniDIP
DG419BDJ
8-Pin Narrow SOIC
DG419BDY
8-Pin MSOP
DG419BDQ
8-Pin CerDIP
DG419BAK, DG419BAK/883
NOTE: SMD product is dual marked with /883 number.
ABSOLUTE MAXIMUM RATINGS
8-Pin Plastic MiniDIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8-Pin Narrow SOICc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8-Pin MSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V - . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 20 V
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND - 0.3 V) to (V+) + 0.3 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V - ) - 2 V to (V+) + 2 V
or 30 mA, whichever occurs first
400 mW
400 mW
400 mW
600 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V - will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 5.3 mW/_C above 75_C
d. Derate 4 mW/_C above 70_C
e. Derate 8 mW/_C above 75_C
Current, (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current (S or D) Pulsed 1 ms, 10% duty cycle . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 65 to 150_C
Power Dissipation (Package)b
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
VL
VVIN
Level
Shift/
Drive
V+
GND
D
V-
FIGURE 1.
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Document Number: 72107
S-31538—Rev. B, 11-Aug-03
DG417B/418B/419B
New Product
Vishay Siliconix
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
A Suffix
D Suffix
- 55 to 125_C
- 40 to 85_C
V+ = 15 V, V - = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
IS = - 10 mA, VD = "12.5 V
V+ = 13.5 V, V - = - 13.5 V
Room
Full
15
Room
Full
- 0.1
- 0.25
- 20
0.25
20
- 0.25
-5
0.25
5
DG417B
DG418B
Room
Full
- 0.1
- 0.25
- 20
0.25
20
- 0.25
-5
0.25
5
DG419B
Room
Full
- 0.1
- 0.75
- 60
0.75
60
- 0.75
- 12
0.75
12
DG417B
DG418B
Room
Full
- 0.4
- 0.4
- 40
0.4
40
- 0.4
- 10
0.4
10
DG419B
Room
Full
- 0.4
- 0.75
- 60
0.75
60
- 0.75
- 12
0.75
12
Typc
Mind Maxd Mind Maxd Unit
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
rDS(on)
Full
IS(off)
Switch Off
Leakage
g Current
ID(off)
D( ff)
Channel On
Leakage Current
ID(on)
D( )
V = 16
5V
16 5 V
V+
16.5
V, V - = - 16.5
VD = #15.5 V
VS = "15.5 V
V+ = 16.5 V, V - = - 16.5 V
VS = VD = "15.5 V
- 15
15
- 15
25
34
15
V
25
29
nA
Digital Control
Input Current VIN Low
IIL
Full
- 0.5
0.5
- 0.5
0.5
Input Current VIN High
IIH
Full
- 0.5
0.5
- 0.5
0.5
A
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Transition Time
Break-Before-Make
Time Delay
RL = 300 , CL = 35 pF
VS = "10 V
See Switching Time
Test Circuit
DG417B
DG418B
Room
Full
62
89
106
89
99
DG417B
DG418B
Room
Full
53
80
88
80
86
87
96
87
93
tTRANS
RL = 300 , CL = 35 pF
VS1 = "10 V, VS2 = #10 V
DG419B
Room
Full
60
tD
RL = 300 , CL = 35 pF
VS1 = VS2 = "10 V
DG419B
Room
16
Q
CL = 10 nF, Vgen = 0 V, Rgen = 0 Room
4
Off-Isolatione
OIRR
RL = 50 , CL = 5 nF f = 1 MHz
Room
- 86
Channel-To-Channel
Crosstalke
XTALK
Room
- 87
Source Off Capacitance
CS(off)
Charge Injection
Drain Off Capacitance
CD(off)
Channel On
Capacitance
CD(on)
DG419B
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
Room
12
DG417B
DG418B
Room
12
DG417B
DG418B
Room
50
DG419B
Room
57
3
ns
3
pC
dB
pF
Power Supplies
Positive Supply
Current
I+
Room
Full
0.001
Negative Supply
Current
I-
Room
Full
- 0.001
Logic Supply Current
IL
Room
Full
0.001
Ground Current
Document Number: 72107
S-31538—Rev. B, 11-Aug-03
IGND
V+ = 16
16.5
5V
V, V - = - 16
16.5
5V
VIN = 0 or 5 V
Room
Full
- 0.000
1
1
5
-1
-5
1
5
-1
-5
1
5
-1
-5
1
5
A
-1
-5
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DG417B/418B/419B
New Product
Vishay Siliconix
SPECIFICATIONSa FOR UNIPOLAR SUPPLIES
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
V+ = 12 V, V - = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
IS = - 10 mA, VD = 3.8 V
V+ = 10.8 V
Room
Full
Typc
A Suffix
D Suffix
- 55 to 125_C
- 40 to 85_C
Mind Maxd Mind Maxd Unit
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
rDS(on)
Full
0
12
12
V
26
35
52
0
35
45
Room
Full
100
125
155
125
143
Room
Full
38
66
73
66
69
Room
62
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make
Time Delay
RL = 300 , CL = 35 pF, VS = 8 V
See Switching Time Test Circuit
ns
tD
RL = 300 , CL = 35 pF
DG419B
Transition Time
tRANS
RL = 300 , CL = 35 pF
VS1 = 0 V, 8 V, VS2 = 8 V, 0 V
Room
Full
95
Charge Injection
Q
CL = 10 nF, Vgen = 0 V, Rgen = 0 Room
3
Room
Full
0.001
Room
- 0.001
Room
0.001
Room
- 0.001
25
25
119
153
119
141
pC
Power Supplies
Positive Supply
Current
I+
Negative Supply
Current
I-
Logic Supply Current
IL
Ground Current
IGND
V+ = 13.2 V, VL = 5.25 V
VIN = 0 or 5 V
1
5
1
5
-1
-5
-1
-5
1
5
1
5
-1
-5
A
-1
-5
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
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Document Number: 72107
S-31538—Rev. B, 11-Aug-03
DG417B/418B/419B
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. VD and Unipolar Supply Voltage
On-Resistance vs. VD and Dual Supply Voltage
40
TA = 25_C
VL = 5 V
250
200
V+ = 3.0 V
VL = 3 V
150
V+ = 12.0 V
100
V+ = 5.0 V
50
V+ = 15.0 V
V+ = 8.0 V
V+ = 20.0 V
rDS(on) - Drain-Source On-Resistance ()
rDS(on) - Drain-Source On-Resistance ()
300
0
0
4
8
12
16
TA = 25_C
35
30
"5V
25
"8V
" 10 V
20
" 12 V
" 15 V
15
10
" 20 V
5
- 20
20
- 15
- 10
-5
30
On-Resistance vs. VD and Temperature
25
125_C
85_C
15
25_C
- 55_C
10
5
- 15
125_C
40
35
85_C
30
25_C
25
- 55_C
20
15
V+ = 12 V
v- = 0 V
VL = 5 V
10
-5
0
5
10
15
0
2
6
8
10
12
Supply Current vs. Input Switching Frequency
100 m
V" = "15 V
VL = 5 V
TA = 25_C
I+ - Supply Current (nA)
10 m
40
ID, IS (pA)
4
VD - Drain Voltage (V)
Leakage vs. Analog Voltage
ID(on)
ID(off)
20
0
IS(off)
- 20
- 40
100 1
1n
0
5
10
VD or VS - Drain or Source Voltage (V)
Document Number: 72107
S-31538—Rev. B, 11-Aug-03
15
IL
100 n
- 80
-5
I+, I -
10 10 n
- 10
V" = "15 V
VL = 5 V
1m
- 60
- 100
- 15
20
5
- 10
100
60
15
45
VD - Drain Voltage (V)
80
10
On-Resistance vs. VD and Temperature
50
V" = "15 V
VL = 5 V
20
5
VD - Drain Voltage (V)
rDS(on) - Drain-Source On-Resistance ()
rDS(on) - Drain-Source On-Resistance ()
VD - Drain Voltage (V)
0
1 00 p
10
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
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DG417B/418B/419B
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transition Time vs. Temperature
Switching Time vs. Temperature
100
140
VL = 5 V
90
120
V" = "15 V
VL = 5 V
80
tON V = 12 V
80
tON V = "15 V
tOFF V = "15 V
60
t ON , t OFF (ns)
t ON , t OFF (ns)
100
70
tTRANS -
60
tTRANS+
50
40
tOFF V = 12 V
40
30
20
- 55
- 35
- 15
5
25
45
65
85
105
20
- 55
125
- 35
- 15
5
Temperature (_C)
45
65
85
105
125
Insertion Loss, Off -Isolation
Crosstalk vs. Frequency
Transition Time vs. Temperature
140
10
V+ = 12 V
v- = 0 V
VL = 5 V
100
- 10
Loss, OIRR, X TALK (dB)
120
t ON , t OFF (ns)
25
Temperature (_C)
tTRANS -
80
tTRANS+
60
Loss
- 30
XTALK
OIRR
- 50
- 70
V+ = 3 V
V- = 0 V
RL = 50 - 90
40
20
- 55
- 110
- 35
- 15
5
25
45
65
85
105
125
100 k
1M
100 M
10 M
1G
Frequency (Hz)
Temperature (_C)
Charge Injection vs. Analog Voltage
Switching Threshold vs. Supply Voltage
30
3.0
25
VT - Switching Threshold (V)
Q - Charge Injection (pC)
VL = 5 V
2.5
2.0
1.5
1.0
20
C = 10 nF
15
10
V = "15 V
5
0
V+ = 12 V
-5
- 10
- 15
- 20
0.5
- 25
0.0
4
6
8
10
12
14
V+ - Supply Voltage (V)
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6
16
18
20
- 30
- 15 - 12
-9
-6
-3
0
3
6
9
12
15
VS - Analog Voltage (V)
Document Number: 72107
S-31538—Rev. B, 11-Aug-03
DG417B/418B/419B
New Product
Vishay Siliconix
TEST CIRCUITS
VO is the steady state output with the switch on.
+5 V
+15 V
3V
Logic
Input
V+
VL
S
"10 V
tr <5 ns
tf <5 ns
50%
0V
D
VO
tOFF
IN
RL
300 V-
GND
CL
35 pF
- 15 V
CL (includes fixture and stray capacitance)
Switch
Input
VS
Switch
Output
0V
Note:
RL
VO = VS
VO
90%
tON
Logic input waveform is inverted for switches that have the
opposite logic sense.
RL + rDS(on)
FIGURE 2. Switching Time (DG417B/418B)
+5 V
+15 V
Logic
Input
VL
VS1
VS2
V+
S1
tr <5 ns
tf <5 ns
3V
0V
D
VO
S2
RL
300 IN
GND
VS1 = VS2
VO
CL
35 pF
Switch
Output
V-
90%
0V
tD
tD
CL (includes fixture and stray capacitance)
- 15 V
FIGURE 3. Break-Before-Make (DG419B)
+5 V
VL
VS1
VS2
+15 V
V+
S1
D
VO
Logic
Input
50%
0V
S2
RL
300 IN
GND
tr <5 ns
tf <5 ns
3V
tTRANS
CL
35 pF
tTRANS
VS1
V01
V-
- 15 V
90%
Switch
Output
VS2
V02
10%
CL (includes fixture and stray capacitance)
VO = VS
RL
RL + rDS(on)
FIGURE 4. Transition Time (DG419B)
Document Number: 72107
S-31538—Rev. B, 11-Aug-03
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DG417B/418B/419B
New Product
Vishay Siliconix
TEST CIRCUITS
Rg
+5 V
+15 V
VL
V+
S
VO
VO
D
VO
IN
INX
OFF
CL
10 nF
3V
ON
V-
GND
OFF
Q = VO x CL
- 15 V
FIGURE 5. Charge Injection
+5 V
+15 V
C
C
+5 V
VL
S1
VS
C
D
C
Rg = 50 VL
50 VO
V+
S
VS
S2
RL
+15 V
V+
VO
D
Rg = 50 0V, 2.4 V
IN
RL
IN
0.8 V
GND
GND
C
V-
C = RF bypass
C
- 15 V
- 15 V
XTALK Isolation = 20 log
V-
VO
Off Isolation = 20 log
VO
VS
VS
FIGURE 7. Off Isolation
FIGURE 6. Crosstalk (DG419B)
+5 V
+15 V
C
C
VL
V+
S
VS
D
VO
Rg = 50 0V, 2.4 V
RL
IN
GND
V-
C
- 15 V
FIGURE 8. Insertion Loss
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Document Number: 72107
S-31538—Rev. B, 11-Aug-03
DG417B/418B/419B
New Product
Vishay Siliconix
TEST CIRCUITS
+5 V
+15 V
+15 V
C
C
VL
V+
S
DG417B/418B
V+ S2
IN
HP4192A
Impedance
Analyzer
or Equivalent
D
GND
V-
C
f = 1 MHz
S1
DG419B
Meter
0 V, 2.4 V
NC
C
0 V, 2.4 V
Meter
IN
D2
GND
- 15 V
HP4192A
Impedance
Analyzer
or Equivalent
D1
VC
f = 1 MHz
- 15 V
FIGURE 9. Source/Drain Capacitances
Document Number: 72107
S-31538—Rev. B, 11-Aug-03
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