SOT23 HIGH SPEED SWITCHING DIODES BAL74 BAR74 BAL74 BAR74 ISSUE 3 FEBRUARY 1997 PIN CONFIGURATION Circuit For Measuring Switching Time IF=10mA 2 3 0mA Irr VIN VOUT IR=10mA 1kΩ PARTMARKING DETAILS BAL74 JC BAR74 JB 0.1µF 1 +11V Trr2 2 1 0.2µF BAL74 3 1 SOT23 BAR74 Trr1 ABSOLUTE MAXIMUM RATINGS. Pulse is supplied by a generator with the following characteristics: Output is monitored on a sampling oscilloscope with the following characteristics: Output impedance = 50Ω Rise time <= 0.5ns Pulse width = 100ns Input impedance = 50Ω Rise time <= 0.6ns 100 80 PARAMETER SYMBOL Continuous Reverse Voltage VR VALUE 50 V Average Output Rectified Current (tav = 10ms) Io 100 mA Continuous Forward Current IF 150 mA Peak Forward Current ( t = 15ms) IFM 200 mA Forward Surge Current (t = 1µ s) IFS 1 Operating and Storage Temperature Range Tj:Tstg Power Dissipation at Tamb =25°C Ptot -55 to +150 330 UNIT A ° C mW 60 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 40 20 0 0 0.2 0.4 0.6 VF - (Volts) IF v VF 0.8 1.0 PARAMETER SYMBOL MIN. Breakdown Voltage VBR 51 Forward Voltage VF Reverse current Capacitance TYP. UNIT CONDITIONS. V I R = 5µ A 1.0 V IF = 100mA IR 0.1 100 µA µA VR = 50V VR = 50V, Tamb = 125°C Co 2.0 pF VR = 0 4 2 ns ns IF = IR = 10mA, IRR = 1mA IF = 10mA, VR = 6V RL = 100Ω Reverse Recovery Time trr MAX. Spice parameter data is available upon request for this device PAGE NO SOT23 HIGH SPEED SWITCHING DIODES BAL74 BAR74 BAL74 BAR74 ISSUE 3 FEBRUARY 1997 PIN CONFIGURATION Circuit For Measuring Switching Time IF=10mA 2 3 0mA Irr VIN VOUT IR=10mA 1kΩ PARTMARKING DETAILS BAL74 JC BAR74 JB 0.1µF 1 +11V Trr2 2 1 0.2µF BAL74 3 1 SOT23 BAR74 Trr1 ABSOLUTE MAXIMUM RATINGS. Pulse is supplied by a generator with the following characteristics: Output is monitored on a sampling oscilloscope with the following characteristics: Output impedance = 50Ω Rise time <= 0.5ns Pulse width = 100ns Input impedance = 50Ω Rise time <= 0.6ns 100 80 PARAMETER SYMBOL Continuous Reverse Voltage VR VALUE 50 V Average Output Rectified Current (tav = 10ms) Io 100 mA Continuous Forward Current IF 150 mA Peak Forward Current ( t = 15ms) IFM 200 mA Forward Surge Current (t = 1µ s) IFS 1 Operating and Storage Temperature Range Tj:Tstg Power Dissipation at Tamb =25°C Ptot -55 to +150 330 UNIT A ° C mW 60 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 40 20 0 0 0.2 0.4 0.6 VF - (Volts) IF v VF 0.8 1.0 PARAMETER SYMBOL MIN. Breakdown Voltage VBR 51 Forward Voltage VF Reverse current Capacitance TYP. UNIT CONDITIONS. V I R = 5µ A 1.0 V IF = 100mA IR 0.1 100 µA µA VR = 50V VR = 50V, Tamb = 125°C Co 2.0 pF VR = 0 4 2 ns ns IF = IR = 10mA, IRR = 1mA IF = 10mA, VR = 6V RL = 100Ω Reverse Recovery Time trr MAX. Spice parameter data is available upon request for this device PAGE NO