Zetex BAL74 Sot23 high speed switching diode Datasheet

SOT23 HIGH SPEED SWITCHING DIODES
BAL74
BAR74
BAL74
BAR74
ISSUE 3 – FEBRUARY 1997
PIN CONFIGURATION
Circuit For Measuring Switching Time
IF=10mA
2
3
0mA
Irr
VIN
VOUT
IR=10mA
1kΩ
PARTMARKING DETAILS
BAL74 – JC
BAR74 – JB
0.1µF
1
+11V
Trr2
2
1
0.2µF
BAL74
3
1
SOT23
BAR74
Trr1
ABSOLUTE MAXIMUM RATINGS.
Pulse is supplied by a generator with the following
characteristics:
Output is monitored on a sampling oscilloscope
with the following characteristics:
Output impedance = 50Ω
Rise time <= 0.5ns
Pulse width = 100ns
Input impedance = 50Ω
Rise time <= 0.6ns
100
80
PARAMETER
SYMBOL
Continuous Reverse Voltage
VR
VALUE
50
V
Average Output Rectified Current
(tav = 10ms)
Io
100
mA
Continuous Forward Current
IF
150
mA
Peak Forward Current ( t = 15ms)
IFM
200
mA
Forward Surge Current (t = 1µ s)
IFS
1
Operating and Storage Temperature Range
Tj:Tstg
Power Dissipation at Tamb =25°C
Ptot
-55 to +150
330
UNIT
A
°
C
mW
60
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
40
20
0
0
0.2
0.4
0.6
VF - (Volts)
IF v VF
0.8
1.0
PARAMETER
SYMBOL
MIN.
Breakdown Voltage
VBR
51
Forward Voltage
VF
Reverse current
Capacitance
TYP.
UNIT
CONDITIONS.
V
I R = 5µ A
1.0
V
IF = 100mA
IR
0.1
100
µA
µA
VR = 50V
VR = 50V, Tamb = 125°C
Co
2.0
pF
VR = 0
4
2
ns
ns
IF = IR = 10mA, IRR = 1mA
IF = 10mA, VR = 6V
RL = 100Ω
Reverse Recovery Time trr
MAX.
Spice parameter data is available upon request for this device
PAGE NO
SOT23 HIGH SPEED SWITCHING DIODES
BAL74
BAR74
BAL74
BAR74
ISSUE 3 – FEBRUARY 1997
PIN CONFIGURATION
Circuit For Measuring Switching Time
IF=10mA
2
3
0mA
Irr
VIN
VOUT
IR=10mA
1kΩ
PARTMARKING DETAILS
BAL74 – JC
BAR74 – JB
0.1µF
1
+11V
Trr2
2
1
0.2µF
BAL74
3
1
SOT23
BAR74
Trr1
ABSOLUTE MAXIMUM RATINGS.
Pulse is supplied by a generator with the following
characteristics:
Output is monitored on a sampling oscilloscope
with the following characteristics:
Output impedance = 50Ω
Rise time <= 0.5ns
Pulse width = 100ns
Input impedance = 50Ω
Rise time <= 0.6ns
100
80
PARAMETER
SYMBOL
Continuous Reverse Voltage
VR
VALUE
50
V
Average Output Rectified Current
(tav = 10ms)
Io
100
mA
Continuous Forward Current
IF
150
mA
Peak Forward Current ( t = 15ms)
IFM
200
mA
Forward Surge Current (t = 1µ s)
IFS
1
Operating and Storage Temperature Range
Tj:Tstg
Power Dissipation at Tamb =25°C
Ptot
-55 to +150
330
UNIT
A
°
C
mW
60
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
40
20
0
0
0.2
0.4
0.6
VF - (Volts)
IF v VF
0.8
1.0
PARAMETER
SYMBOL
MIN.
Breakdown Voltage
VBR
51
Forward Voltage
VF
Reverse current
Capacitance
TYP.
UNIT
CONDITIONS.
V
I R = 5µ A
1.0
V
IF = 100mA
IR
0.1
100
µA
µA
VR = 50V
VR = 50V, Tamb = 125°C
Co
2.0
pF
VR = 0
4
2
ns
ns
IF = IR = 10mA, IRR = 1mA
IF = 10mA, VR = 6V
RL = 100Ω
Reverse Recovery Time trr
MAX.
Spice parameter data is available upon request for this device
PAGE NO
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