AP4501AGM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
▼ Low On-resistance
N-CH BVDSS
D2
RDS(ON)
D1
D1
▼ Fast Switching Performance
30V
28mΩ
ID
▼ RoHS Compliant
SO-8
S1
7A
P-CH BVDSS
G2
S2
G1
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
-30V
RDS(ON)
50mΩ
ID
-5.3A
D2
D1
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Total Power Dissipation
-30
V
+20
V
7.0
-5.3
A
3
5.8
-4.7
A
20
-20
A
1
PD@TA=25℃
30
+20
Continuous Drain Current
Pulsed Drain Current
P-channel
3
Continuous Drain Current
IDM
Units
2
Linear Derating Factor
W
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201207173
AP4501AGM-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=7A
-
-
28
mΩ
VGS=4.5V, ID=5A
-
-
42
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=6A
-
8.4
13.5
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.7
-
nC
VDS=20V
-
5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18.5
-
ns
tf
Fall Time
RD=20Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
485
770
pF
Coss
Output Capacitance
VDS=25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
3
Ω
Min.
Typ.
IS=7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
2
AP4501AGM-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-5.3A
-
-
50
mΩ
VGS=-4.5V, ID=-4.2A
-
-
90
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-5A
-
8
13
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
1.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.5
-
nC
VDS=-15V
-
6.7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
21
-
ns
tf
Fall Time
RD=15Ω
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
595
950
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
10
-
Ω
Min.
Typ.
IS=-2.6A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-5A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4501AGM-HF
N-Channel
40
40
T A =150 ℃
10V
7.0V
5.0V
4.5V
30
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 ℃
20
V G =3.0V
10
30
20
V G =3.0V
10
0
0
0
1
2
3
0
4
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
34
1.8
I D =7A
V G =10V
I D = 5A
Normalized RDS(ON)
T A = 25 o C
30
RDS(ON0 (mΩ)
10V
7.0V
5.0V
4.5V
26
1.4
1.0
22
30
18
0.6
2
4
6
8
10
-50
50
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
8
1.2
Normalized VGS(th) (V)
10
T j =25 o C
o
T j =150 C
0
o
V GS , Gate-to-Source Voltage (V)
IS(A)
-30
6
4
2
1.0
0.8
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4501AGM-HF
N-Channel
f=1.0MHz
1000
10
C iss
8
ID=6A
V DS = 24 V
6
C (pF)
VGS , Gate to Source Voltage (V)
12
100
C oss
C rss
4
2
10
0
0
3
6
9
12
15
1
18
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
100us
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
30
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
-30
Rthja=135 oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4501AGM-HF
P-Channel
40
40
o
T A = 150 C
-ID , Drain Current (A)
- 10V
- 7.0V
- 5.0V
- 4.5V
30
-ID , Drain Current (A)
- 10V
- 7.0V
o
T A =25 C
20
V G = - 3 .0V
10
- 5.0V
30
- 4.5V
20
V G = - 3 .0V
10
0
0
0
1
2
3
4
5
6
0
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
70
I D = -5.3 A
V G = - 10V
I D = -4.2 A
T A =25 o C
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
60
50
1.2
1.0
40
0.8
30
0.6
30
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
Normalized -VGS(th) (V)
8
6
-IS(A)
-30
4
T j =150 o C
T j =25 o C
1.0
0.8
2
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4501AGM-HF
P-Channel
f=1.0MHz
12
1000
C iss
I D = -5A
V DS = -15V
8
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
100
C oss
C rss
4
2
10
0
0.0
4.0
8.0
12.0
16.0
1
20.0
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
100us
1ms
1
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
30
DC
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
-30
Rthja=135 oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7