NSC DS14C88TN Quad cmos line driver Datasheet

DS14C88/DS14C88T
QUAD CMOS Line Driver
General Description
Features
The DS14C88 and DS14C88T, pin-for-pin compatible to the
DS1488/MC1488, are line drivers designed to interface
data terminal equipment (DTE) with data circuit-terminating
equipment (DCE). These devices translate standard TTL/
CMOS logic levels to levels conforming to EIA-232-D and
CCITT V.28 standards.
The device is fabricated in low threshold CMOS metal gate
technology. The device provides very low power consumption compared to its bipolar equivalents: 500 mA (DS14C88)
versus 25 mA (DS1488).
The DS14C88/DS14C88T simplifies designs by eliminating
the need for external slew rate control capacitors. Slew rate
control in accordance with EIA-232D is provided on-chip,
eliminating the output capacitors.
Y
Y
Y
Y
Y
Meets EIA-232D and CCITT V.28 standards
Industrial temperature range
b 40§ C to a 85§ CÐDS14C88T
LOW power consumption
Wide power supply range
g 5V to g 12V
Available in SOIC package
Connection Diagram
TL/F/11105 – 1
Order Number DS14C88N, DS14C88M, DS14C88TJ, DS14C88TN or DS14C88TM
See NS Package Number J14A, N14A or M14A
C1996 National Semiconductor Corporation
TL/F/11105
RRD-B30M36/Printed in U. S. A.
http://www.national.com
DS14C88/DS14C88T QUAD CMOS Line Driver
February 1996
Absolute Maximum Ratings
(Note 1)
Lead Temperature
(Soldering 4 seconds)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage
V a Pin
Vb Pin
Driver Input Voltage
Driver Output Voltage
a 260§ C
b 65§ C to a 150§ C
Storage Temperature Range
This Product does not meet 2000V ESD rating. (Note 9)
a 13V
b 13V
Recommended Operating
Conditions
(V a ) a 0.3V to GND b0.3V
l(V ab) b VOl s 30V
l(V ) b VOl s 30V
Continuous Power Dissipation @ a 25§ C (Note 2)
N Package
1513 mW
J Package
1935 mW
M Package
1063 mW
a 150§ C
Junction Temperature
V a Supply (GND e 0V)
Vb Supply (GND e 0V)
Operating Free Air Temp. (TA)
DS14C88
DS14C88T
Min
Max
a 4.5
b 4.5
a 12.6
b 12.6
Units
V
V
0
a 75
a 85
§C
§C
b 40
Electrical Characteristics Over Recommended Operating Conditions, unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
a 10
mA
IIL
Maximum Low Input Current
VIN e GND
IIH
Maximum High Input Current
VIN e V a
b 10
VIL
Low Level Input Voltage
V a t a 7V, Vb s b7V
GND
0.8
V
V a k a 7V, Vb l b7V
GND
0.6
V
VIH
VOL
High Level Input Voltage
Low Level Output Level
2.0
VIN e VIH
RL e 3 kX
or 7 kX
VOH
High Level Output Level
VIN e VIL
RL e 3 kX
or 7 kX
Va e
V a e 12V, Vb e b12V
V
b 10.5
b 9.0
V
6.5
8.0
V
V a e 12V, Vb e b12V
9.0
10.5
V
VIN e 2.0V, VO e GND
ROUT
Output Resistance
Va e
ICC a
Positive Supply Current
VIN e VILmax
RL e OPEN
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b 6.5
V a e 9V, Vb e b9V
Low Level Output Short
Circuit Current (Note 3)
V a e a 12V,
Vb e b12V
Vb e
GND e 0V
b 2V s VO s a 2V (Note 4) (Figure 1)
VIN e VIHmin
RL e OPEN
V
b 8.0
4.0
IOSb
VIN e VILmax
RL e OPEN
V
b 3.0
3.0
VIN e 0.8V, VO e GND
VIN e VIHmin
RL e OPEN
Va
b 4.0
V a e 4.5V, Vb e b4.5V
High Level Output Short
Circuit Current (Note 3)
Negative Supply Current
4.5V,
Vb e b4.5V
V a e 9V, Vb e 9V
IOS a
ICCb
mA
V
b 45
mA
a 45
mA
10
mA
300
V a e 4.5V, Vb e b4.5V
X
V a e 9V, Vb e b9V
30
mA
V a e 12V, Vb e b12V
60
mA
V a e 4.5V, Vb e b4.5V
DS14C88
V a e 9V,
Vb e b9V
DS14C88T
50
mA
300
mA
mA
500
mA
V a e 12V,
Vb e b12V
DS14C88T
700
mA
V a e 4.5V,
DS14C88
b 10
mA
Vb e b4.5V
DS14C88T
b 15
mA
V a e 9V,
DS14C88
b 10
mA
Vb e b9V
DS14C88T
b 15
mA
V a e 12V,
DS14C88
b 10
mA
Vb e b12V
DS14C88T
b 15
mA
V a e 4.5V,
DS14C88
b 30
mA
Vb e b4.5V
DS14C88T
b 45
mA
V a e 9V,
DS14C88
b 30
mA
Vb e b9V
DS14C88T
b 45
mA
V a e 12V,
DS14C88
b 60
mA
Vb e b12V
DS14C88T
b 80
mA
2
DS14C88
400
Switching Characteristics
Over Recommended Operating Conditions, unless otheriwse specified (Figures 2 and 3 ) (Notes 5 and 6)
Symbol
tPLH
tPHL
Parameter
Propagation Delay
Low to High
Propagation Delay
High to Low
tr
Rise Time (Note 7)
tf
Fall Time (Note 7)
tsk
Typical Propagation
Delay Skew
SR
Output Slew Rate
(Note 7)
Typ
Max
Units
V a e a 4.5V, Vb e b4.5V
Conditions
1.5
6.0
ms
V a e a 9.0V, Vb e b9.0V
1.2
5.0
ms
V a e a 12V, Vb e b12V
1.2
4.0
ms
Vb e b4.5V
1.5
6.0
ms
V a e a 9.0V, Vb e b9.0V
1.35
5.0
ms
V a e a 12V, Vb e b12V
1.3
4.0
ms
V a e a 4.5V,
Min
0.2
0.2
1.0
ms
1.0
ms
V a e a 4.5V, Vb e b4.5V
250
ns
V a e a 9.0V, Vb e b9.0V
200
ns
V a e a 12V, Vb e b12V
150
ns
RL e 3 kX to 7 kX
CL e 15 pF to 2500 pF
30
V/ms
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The tables of ‘‘Electrical Characteristics’’ specify conditions for device operation.
Note 2: Derate N Package 12.1 mW/§ C, J Package 12.9 mW/§ C, and M Package 8.5 mW/§ C above a 25§ C.
Note 3: IOS a and IOSb values are for one output at a time. If more than one output is shorted simultaneously, the device dissipation may be exceeded.
Note 4: Power supply (V a , Vb) and GND pins are connected to ground for the Output Resistance Test (RO).
Note 5: AC input test waveforms for test purposes: tr e tf s 20 ns, VIH e 2V, VIL e 0.8V (0.6V at V a e 4.5V, Vb e b 4.5V)
Note 6: Input rise and rall times must not exceed 5 ms.
Note 7: The output slew rate, rise time, and fall time are measured from the a 3.0V to the b 3.0V level on the output waveform.
Note 8: CL include jig and probe capacitances.
Note 9: ESD Rating (HBM, 1.5 kX, 100 pF) t 1.0 kV.
3
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Parameter Measure Information
TL/F/11105 – 2
FIGURE 1. Output Resistance Test Circuit (Power-Off)
TL/F/11105 – 3
FIGURE 2. Driver Load Circuit (Note 8)
TL/F/11105 – 4
FIGURE 3. Driver Switching Waveform
Typical Application Information
TL/F/11105 – 5
FIGURE 4. EIA-232D Data Transmission
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4
Physical Dimensions inches (millimeters)
Order Number DS14C88TJ
NS Package Number J14A
Order Number DS14C88M or DS14C88TM
NS Package Number M14A
5
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DS14C88/DS14C88T QUAD CMOS Line Driver
Physical Dimensions inches (millimeters) (Continued)
Order Number DS14C88N or DS14C88TN
NS Package Number N14A
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