APT10035B2FLL(G)
APT10035LFLL(G)
1000V 28A 0.37 Ω
POWER MOS 7
R
FREDFET
B2FLL
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-264
LFLL
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
T-MAX™
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT10035
UNIT
1000
Volts
28
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
690
Watts
Linear Derating Factor
5.5
W/°C
VGSM
PD
TJ,TSTG
112
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
-55 to 150
Operating and Storage Junction Temperature Range
TL
1
28
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
Amps
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
MAX
UNIT
1000
Volts
28
Amps
(VGS = 10V, 14A)
0.37
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
250
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
2-2009
BVDSS
Characteristic / Test Conditions
050-7037 Rev C
Symbol
APT10035B2FLL - LFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Input Capacitance
VGS = 0V
Coss
Output Capacitance
VDS = 25V
Crss
3
Total Gate Charge
Qgs
Qgd
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
ID = 28A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
Rise Time
td(off)
VDD = 500V
Turn-off Delay Time
tf
ID = 28A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
ns
900
VDD = 670V, VGS = 15V
Eon
nC
9
RG = 0.6Ω
Eon
UNIT
pF
160
186
24
122
12
10
36
VGS = 10V
td(on)
MAX
5185
881
VDD = 500V
Gate-Source Charge
tr
TYP
f = 1 MHz
Reverse Transfer Capacitance
Qg
MIN
Test Conditions
Ciss
ID = 28A, RG = 5Ω
623
INDUCTIVE SWITCHING @ 125°C
1423
VDD = 670V VGS = 15V
µJ
779
ID = 28A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
Characteristic / Test Conditions
MIN
TYP
MAX
28
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
112
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -28A)
1.3
Volts
dv/
dt
Peak Diode Recovery
18
V/ns
dv/
dt
5
Reverse Recovery Time
(IS = -28A, di/dt = 100A/µs)
Tj = 25°C
320
Tj = 125°C
650
Q rr
Reverse Recovery Charge
(IS = -28A, di/dt = 100A/µs)
Tj = 25°C
3.60
Tj = 125°C
9.72
IRRM
Peak Recovery Current
(IS = -28A, di/dt = 100A/µs)
Tj = 25°C
16.5
Tj = 125°C
24.7
t rr
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.18
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.15
0.7
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7037 Rev C
2-2009
0.20
0.5
0.3
Duty Factor D = t1/t2
0.1
SINGLE PULSE
0.05
0
t1
t2
0.05
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 7.65mH, RG = 25Ω, Peak IL = 28A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID28A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.10
UNIT
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT10035B2FLL - LFLL
60
RC MODEL
Junction
temp. ( ”C)
0.0271
Power
(Watts)
0.0656
0.0859
0.00899F
0.0202F
0.293F
Case temperature
ID, DRAIN CURRENT (AMPERES)
VGS =15,10 & 8V
50
7V
40
6.5V
30
6V
20
5.5V
10
5V
0
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
50
40
30
TJ = +125°C
20
TJ = -55°C
10
0
TJ = +25°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
25
20
15
10
5
0
25
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
I
V
D
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 14A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
0.0
-50
GS
1.30
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
30
NORMALIZED TO
V
= 10V @ 14A
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
2-2009
70
050-7037 Rev C
ID, DRAIN CURRENT (AMPERES)
80
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
APT10035B2FLL - LFLL
20,000
OPERATION HERE
LIMITED BY RDS (ON)
10,000
50
Ciss
100µS
10
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
112
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
10mS
1
100
16
= 28A
12
VDS=200V
VDS=500V
VDS=800V
8
4
0
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Coss
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
I
1,000
180
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
V
160
G
V
DD
R
G
100
= 5Ω
T = 125°C
J
L = 100µH
80
L = 100µH
= 670V
tr and tf (ns)
td(on) and td(off) (ns)
120
40
tr
60
20
td(on)
20
0
0
0
10
20
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
0
30
40
50
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
10
20
5000
V
DD
R
G
= 670V
Eon
= 5Ω
J
L = 100µH
E ON includes
diode reverse recovery.
1500
1000
500
SWITCHING ENERGY (µJ)
T = 125°C
2000
SWITCHING ENERGY (µJ)
tf
J
60
40
2-2009
= 670V
= 5Ω
T = 125°C
140
050-7037 Rev C
DD
R
td(off)
Eoff
4000
3000
Eon
2000
V
I
DD
D
= 670V
= 28A
T = 125°C
J
1000
L = 100µH
E ON includes
Eoff
diode reverse recovery.
0
0
10
20
30
40
50
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT10035B2FLL - LFLL
Gate Voltage
10 %
90%
T = 125 C
J
td(on)
Gate Voltage
T = 125 C
J
t
d(off)
tr
Drain Current
90%
5%
10 %
Drain Voltage
5%
90%
Drain Voltage
10%
tf
Switching Energy
Drain Current
0
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT15DF120B
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2-2009
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7037 Rev C
Drain
Drain
20.80 (.819)
21.46 (.845)