DTC115E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 100kΩ 100kΩ VMT3 EMT3F 50V DTC115EM DTC115EEB (SC-105AA) (SC-89) EMT3 l Features 1) Built-In Biasing Resistors, R1 = R2 = 100kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary PNP Types: DTA115E series 6) Lead Free/RoHS Compliant. UMT3 DTC115EE SOT-416(SC-75A) DTC115EUA SOT-323(SC-70) SMT3 DTC115EKA SOT-346(SC-59) l Inner circuit l Application Switching circuit, Inverter circuit, Interface circuit, Driver circuit l Packaging specifications Part No. DTC115EM DTC115EEB DTC115EE DTC115EUA DTC115EKA Package Package size Taping code VMT3 EMT3F EMT3 UMT3 SMT3 1212 1616 1616 2021 2928 T2L TL TL T106 T146 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/9 Reel size Tape width (mm) (mm) 180 180 180 180 180 8 8 8 8 8 Basic ordering unit.(pcs) Marking 8000 3000 3000 3000 3000 29 29 29 29 29 20121023 - Rev.001 DTC115E series Datasheet l Absolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Supply voltage VCC 50 V Input voltage VIN -10 to 40 V Output current IO 20 mA IC(MAX)*1 100 mA Collector current Power dissipation DTC115EM 150 DTC115EEB 150 PD*2 DTC115EE 150 DTC115EUA 200 DTC115EKA 200 Tj 150 ℃ Tstg -55 to +150 ℃ Junction temperature Range of storage temperature mW l Electrical characteristics (Ta = 25°C) Values Parameter Input voltage Output voltage Input current Symbol Conditions Unit Min. Typ. Max. VI(off) VCC = 5V, IO = 100μA - - 0.5 VI(on) VO = 0.3V, IO = 1mA 3 - - VO(on) IO / I I = 5mA / 0.25mA - 0.1 0.3 V VI = 5V - - 0.15 mA II V Output current IO(off) VCC = 50V, VI = 0V - - 0.5 μA DC current gain GI VO = 5V, IO = 5mA 82 - - - Input resistance R1 - 70 100 130 kΩ Resistance ratio R2/R1 - 0.8 1 1.2 - - 250 - MHz Transition frequency f T*1 VCE = 10V, IE = -5mA, f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/9 20121023 - Rev.001 DTC115E series Datasheet l Electrical characteristic curves (Ta =25°C) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 Output current vs. output voltage www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Fig.4 DC current gain vs. output current 3/9 20121023 - Rev.001 DTC115E series Datasheet l Electrical characteristic curves (Ta =25°C) Fig.5 Output voltage vs. output current www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/9 20121023 - Rev.001 DTC115E series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/9 20121023 - Rev.001 DTC115E series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6/9 20121023 - Rev.001 DTC115E series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 7/9 20121023 - Rev.001 DTC115E series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 8/9 20121023 - Rev.001 DTC115E series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 9/9 20121023 - Rev.001