ACE2420B N-Channel Enhancement Mode Power MOSFET Description ACE2420B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS=200V , ID= 24A RDS(ON) @VGS =10V , TYP 62mΩ Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous)*AC TA=25℃ TA=100℃ Drain Current (Pulsed)*B Power Dissipation TA=25℃ Operating Temperature/Storage Temperature ID 24 IDM 100 PD 150 TJ/ TSTG A 17 -55~150 A A O C /W A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Packaging Type T0-220 Ordering information ACE2420BXX + H Halogen - free Pb - free ZM: TO-220 VER 1.1 1 ACE2420B N-Channel Enhancement Mode Power MOSFET Electrical Characteristics TA=25℃, unless otherwise noted. Parameter Symbol Test Conditions Static Min V(BR)DSS VGS = 0V, ID = 250μA 200 Zero Gate Voltage Drain Current IDSS1 VDS = 200V, VGS = 0V Gate Threshold Voltage VGS(TH) VGS = VDS , IDS= 250μA Gate Leakage Current IGSS VGS= ±20V , VDS=0V RDS(on) VGS = 10V , ID= 15A Forward Trans Conductance gFS VDS= 10V , ID= 15A Diode Forward Voltage VSD ISD= 15A , VGS= 0V Diode Forward Current IS Drain-Source Breakdown Voltage Drain-Source On-state Resistance 1 Typ Max Unit V 1.5 62 1 μA 2.5 V ±100 nA 80 mΩ 30 S 1.2 V 24 A Switching Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Qg Qgs Qgd VDS= 100V, ID= 15A, VGS= 10V td( on ) tr td( off ) tf VDD=100V,ID= 15A, VGS= 10V,RG= 2.5Ω 60 19 17 10 18 22 5 nC nC nC ns ns ns ns 4200 163 75 pF pF pF Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS=25V,VGS= 0V, f= 1.0MHz VER 1.1 2 ACE2420B N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics VER 1.1 3 ACE2420B N-Channel Enhancement Mode Power MOSFET VER 1.1 4 ACE2420B N-Channel Enhancement Mode Power MOSFET Packing Information TO-220 VER 1.1 5 ACE2420B N-Channel Enhancement Mode Power MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6