PT9701 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC 1.25 A VCES 45 V PDISS 14 W @ TC = 25 °C TJ -55 °C to +200 °C TSTG -55 °C to +200 °C θJC 12 °C/W CHARACTERISTICS SYMBOL 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 20 mA 25 V BVCES IC = 10 mA 45 V BVEBO IE = 1.0 mA 3.5 V hFE VCE = 5.0 V 15 --- Cob VCB = 28 V PG ηC VCE = 28 V IC = 200 mA f = 1.0 MHz Pout = 5.0 W f = 400 MHz 7.0 10 50 12 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. pF dB % REV. A 1/1