6&5 'HVFULSWLRQ %7 Series R Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. 6\PERO ① ② ③ Ordering Information Part No. Package Packing BT151-500R BT151-650R TO-220 50pcs / Tube TO-220 50pcs / Tube BT151-800R TO-220 50pcs / Tube BT151F-400R BT151F-650R ITO-220 50pcs / Tube ITO-220 50pcs / Tube BT151F-800R ITO-220 50pcs / Tube Mar.2015-REV.00 www.sddydz.com 1 of 5 6&5 %7 Series R ABSOLUTE MAXIMUM RATING (TJ = 25°C, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT 500 (Note 2) BT151(F)-500R V Repetitive Peak Off-State Voltages 650 (Note 2) BT151(F)-650R VDRM, VRRM 800 BT151(F)-800R Average On-State Current (half sine wave; Tmb ≤109°C) IT(AV) 7.5 A RMS on-State Current (all conduction angles) IT(RMS) 12 A 100 t = 10 ms Non-Repetitive Peak On-State Current A ITSM (half sine wave; TJ = 25 °C prior to surge) t = 8.3 ms 110 I2t for Fusing (t = 10 ms) I2t 50 A2s Repetitive Rate of Rise of On-State Current After Triggering dIT /dt 50 A/μs (ITM = 20 A; IG = 50 mA; dIG /dt = 50 mA/μs) Peak Gate Current IGM 2 A Peak Gate Voltage VGM 5 V Peak Reverse Gate Voltage VRGM 5 V Peak Gate Power PGM 5 W Average Gate Power (Over any 20 ms period) PG(AV) 0.5 W Operating Junction Temperature TJ 125 °C Storage Temperature TSTG -40 ~150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/μs. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Mounting Base TO-220 θJMb 1.3 K/W Junction to Ambient TO-220 θJA 60 K/W STATIC CHARACTERISTICS (TJ = 25°C, unless otherwise stated) PARAMETER Gate Trigger Current Latching Current Holding Current On-State Voltage SYMBOL IGT IL IH VT Gate Trigger Voltage VGT Off-State Leakage Current I D , IR CONDITIONS VD = 12 V, IT = 0.1 A VD = 12 V, IGT = 0.1 A VD = 12 V, IGT = 0.1 A IT = 23 A VD = 12 V, IT = 0.1 A VD = VDRM(max) , IT = 0.1 A, TJ = 125 °C VD = VDRM(max) , VR = VRRM(max) ,TJ = 125°C MIN 0.35 TYP 4.2 12.6 12 1.59 0.7 0.5 0.1 MAX 5 40 20 1.75 UNIT mA mA mA V 1.5 V 0.5 mA DYNAMIC CHARACTERISTICS (TJ = 25°C, unless otherwise stated) PARAMETER Critical Rate of Rise of Off-State Voltage Gate Controlled Turn-on Time Circuit Commutated Turn-off tIme Mar.2015-REV.00 MIN CONDITIONS VDM = 67% VDRM(max), Gate open circuit 50 dVD /dt TJ = 125 °C, 200 exponential waveform; RGK = 100Ω ITM = 40 A, VD = VDRM(max), IG = 0.1 A, tGT dIG /dt = 5 A/μs VD = 67% VDRM(max), TJ = 125°C; tQ ITM = 20 A, VR = 25 V, dITM /dt = 30 A/μs, dVD /dt = 50 V/μs, RGK = 100 Ω SYMBOL www.sddydz.com MAX 130 1000 UNIT V/μs 2 μs 70 μs 2 of 5 %7 Series R 6&5 TYPICAL CHARACTERISTICS Fig 1. Maximum On-State Dissipation, ptot, Versus Average On-State Current, IT(AV), Where a=form factor=IT(RMS)/IT(AV) 15 Fig 2. Maximum Permissible Non-Repetitive Peak On-State Current ITSM,Versus Pulse Width tp, for Sinusoidal Currents, tp ≤ 10ms Tmb(max)/°C ITSM/A 105.5 1000 Ptot/W Conduction form angle factor degrees a 4 30 2.8 60 10 2.2 90 1.9 120 1.57 180 2.2 1.9 α=1.57 112 2.8 dIT/dt limit 100 4 118.5 α 0 ITSM IT 5 0 1 2 3 4 5 IT(AV)/A 6 T 7 8 125 time TJ initial=25°C max 10 10µs 100µs 1ms 10ms T/s Fig 3. Maximum Permissible Rms Current lT(RMS), Versus Mounting Base Temperature Tmb IT(RMS)/A 15 109°C 10 Fig 4. Maximum Permissible Non-Repetitive Peak On-State Current ITSM,Versus Number Of Cycles,For Sinusoidal Currents, f=50HZ ITSM/A 120 ITSM IT 100 T time 80 TJ initial=25°C max 60 5 40 20 0 -50 Mar,2015-REV.00 0 50 100 Tmb/°C 150 0 1 10 100 1000 Number Of Half Cycles At 50Hz www.sddydz.com 3 of 5 %7 Series 6&5 TYPICAL CHARACTERISTICS(Cont.) Fig 7. Normalised Gate Trigger Current IGT(TJ)/ IGT(25°C), Versus Junction Temperature TJ IGT(TJ) IGT(25°C) 3 Fig 8. Normalised Latching Current IL(TJ)/IL(25°C), Versus Junction Temperature TJ IL(TJ) IL(25°C) 3 2.5 2.5 2 2 1.5 1.5 1 1 0.5 0.5 0 -50 0 50 TJ/°C 100 0 -50 150 Fig 9. Normalised Holding Current IH(TJ)/IH(25 Versus Junction Temperature TJ 3 IH(TJ) IH(25°C) 0 50 TJ/°C 100 150 ), Fig 10. Typical and Maximum On-State Characteristic 30 IT/A TJ=125°C 25 TJ=25°C 2.5 2 20 1.5 15 1 10 0.5 5 0 -50 0 50 TJ/°C 100 150 Fig 11.Transient Thermal Impedance Zthj-mb, Versus Pulse Width tp Zth j-mb(K/W) 10 1 0 typ 0 0.5 1 VT/V 2 RGK=100Ω 0.1 tp 1.5 Fig 12. Typical, Critical Rate Of Rise Of Off-State Voltage, dVD/dt Versus Junction Temperature TJ dVD/dt(V/µs) 10000 1000 PD max 100 0.01 t 0.001 10us 0.1ms 1ms 10ms 0.1s 1s gate open circuit 10s 10 0 tp/s Mar.2015-REV.00 50 100 150 TJ/°C www.sddydz.com 4 of 5 6&5 %7 Series TO-220 Mechanical Drawing ITO-220 Mechanical Drawing Mar,2015-REV.00 www.sddydz.com 5 of 5