TVU014 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 BAL FLG The ASI TVU014 is Designed for .020 x 45° A B Ø.130 NOM. .050 x 45° FEATURES: E C N D • • • Omnigold™ Metalization System F G H I J L K M MAXIMUM RATINGS IC 2 x 2.6 A VCBO 45 V PDISS 65 W @ TC = 25 C O .065 / 1.65 .125 / 3.18 D .243 / 6.17 .255 / 6.48 E .630 / 16.00 .670 / 17.01 .092 / 2.34 F -65 OC to +200 OC TJ .055 / 1.40 C O inches / mm .060 / 1.52 B 4.0 V VEBO MAXIMUM inches / mm A 25 V VCEO MINIMUM DIM G .555 / 14.10 .565 / 14.35 H .739 / 18.77 .750 / 19.05 I .315 / 8.00 .327 / 8.31 J .002 / 0.05 .006 / 0.15 K .055 / 1.40 .065 / 1.65 L .075 1.91 .095 / 2.41 .190 / 4.83 M .245 / 6.22 N .257 / 6.53 O TSTG -65 C to +150 C θ JC O ORDER CODE: ASI10647 2.5 C/W CHARACTERISTICS SYMBOL O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 20 mA 45 V BVCEO IC = 40 mA 25 V BVEBO IE = 5.0 mA 3.0 V hFE VCE = 20 V COB VCB = 25 V PG IMD1 VCE = 25 V POUT = 14 W IC = 0.5 A 10 f = 1.0 MHz IC = 2 x 850 mA f = 860 MHz 8.5 -50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. --- --- 20 pF dB dBc REV. A 1/1