ASI ASI10647 Npn silicon rf power transistor Datasheet

TVU014
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .250 BAL FLG
The ASI TVU014 is Designed for
.020 x 45°
A
B
Ø.130 NOM.
.050 x 45°
FEATURES:
E
C
N
D
•
•
• Omnigold™ Metalization System
F
G
H
I
J
L
K
M
MAXIMUM RATINGS
IC
2 x 2.6 A
VCBO
45 V
PDISS
65 W @ TC = 25 C
O
.065 / 1.65
.125 / 3.18
D
.243 / 6.17
.255 / 6.48
E
.630 / 16.00
.670 / 17.01
.092 / 2.34
F
-65 OC to +200 OC
TJ
.055 / 1.40
C
O
inches / mm
.060 / 1.52
B
4.0 V
VEBO
MAXIMUM
inches / mm
A
25 V
VCEO
MINIMUM
DIM
G
.555 / 14.10
.565 / 14.35
H
.739 / 18.77
.750 / 19.05
I
.315 / 8.00
.327 / 8.31
J
.002 / 0.05
.006 / 0.15
K
.055 / 1.40
.065 / 1.65
L
.075 1.91
.095 / 2.41
.190 / 4.83
M
.245 / 6.22
N
.257 / 6.53
O
TSTG
-65 C to +150 C
θ JC
O
ORDER CODE: ASI10647
2.5 C/W
CHARACTERISTICS
SYMBOL
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 20 mA
45
V
BVCEO
IC = 40 mA
25
V
BVEBO
IE = 5.0 mA
3.0
V
hFE
VCE = 20 V
COB
VCB = 25 V
PG
IMD1
VCE = 25 V
POUT = 14 W
IC = 0.5 A
10
f = 1.0 MHz
IC = 2 x 850 mA
f = 860 MHz
8.5
-50
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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20
pF
dB
dBc
REV. A
1/1
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