isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUZ10 DESCRIPTION ·Typical RDS(on) = 0.06Ω ·High current capability ·175℃ operating temperature APPLICATIONS ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT 50 V ±20 V Drain Current-continuous@ TC=37℃ 23 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature 175 ℃ -65~175 ℃ VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Ptot Tj Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ10 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 50 VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.1 RDS(ON) Drain-Source On-stage Resistance IGSS MAX UNIT V 4 V VGS= 10V; ID= 14A 0.07 Ω Gate Source Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 50V; VGS= 0 1 uA VSD Diode Forward Voltage IF= 46A; VGS= 0 1.9 V isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn