FDV305N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 0.9 A, 20 V Applications • Low gate charge • Load switch • Fast switching speed • Battery protection • Power management RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • High performance trench technology for extremely low RDS(ON) D D S SOT-23 Absolute Maximum Ratings Symbol S G G TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current 0.9 A – Continuous – Pulsed 2 PD Maximum Power Dissipation TJ, TSTG Operating and Storage Junction Temperature Range 0.35 W –55 to +150 °C 357 °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient RθJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 305 FDV305N 7’’ 8mm 3000 units 2003 Fairchild Semiconductor Corporation FDV305N Rev D (W) FDV305N January 2003 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA 20 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA 1.5 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) VGS = 0 V, ID = 250 µA,Referenced to 25°C 15 mV/°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA VDS = VGS, ID = 250 µA,Referenced to 25°C 0.6 1 –3 164 235 220 mV/°C 220 300 303 ID(on) On–State Drain Current ID = 0.9 A VGS = 4.5 V, ID = 0.7 A VGS = 2.5 V, VGS = 4.5V, ID = 0.9 A, TJ = 125°C VGS = 4.5V, VDS = 5 V gFS Forward Transconductance VDS = 5V, ID = 0.9 A 3 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 109 pF 30 pF 14 pF 1 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = 10 V, VGS = 4.5 V, VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω ID = 0.9 A, 4.5 9 ns 7 14 ns 8 16 ns 1.4 2.8 ns 1.1 1.5 nC 0.26 nC 0.26 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IF = 0.9 A, diF/dt = 100 A/µs IS = 0.29 A 0.75 0.29 A 1.2 V 7.4 nS 2.2 nC Notes: 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDV305N Rev D (W) FDV305N Electrical Characteristics FDV305N Typical Characteristics 1.8 VGS = 4.5V 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 ID, DRAIN CURRENT (A) 3.0V 1.5 1 2.0V 0.5 1.6 VGS = 2.5V 1.4 3.0V 1.2 3.5V 4.5V 0.8 0 0 0.5 1 1.5 0 2 0.5 Figure 1. On-Region Characteristics. 1.5 2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.6 ID = 0.9A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.6 ID = 0.5A 0.5 0.4 o TA = 125 C 0.3 o TA = 25 C 0.2 0.1 -50 -25 0 25 50 75 100 125 150 1 2 TJ, JUNCTION TEMPERATURE (oC) 10 IS, REVERSE DRAIN CURRENT (A) o 25 C TA = -55oC 2 4 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 2.5 VDS = 5V 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. ID, DRAIN CURRENT (A) 4.0V 1 o 125 C 1.5 1 0.5 VGS = 0V 1 o TA = 125 C 0.1 o 25 C o -55 C 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDV305N Rev D (W) FDV305N Typical Characteristics 150 VDS = 5V ID = 0.9A 10V 120 15V 3 2 90 60 COSS 1 30 0 0 CRSS 0 0.5 1 1.5 0 5 Qg, GATE CHARGE (nC) 15 P(pk), PEAK TRANSIENT POWER (W) 5 RDS(ON) LIMIT 100µs 1ms 1 10ms 100ms 1s DC VGS = 4.5V SINGLE PULSE o RθJA = 357 C/W 0.1 o TA = 25 C 0.01 0.1 1 20 Figure 8. Capacitance Characteristics. 10 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 100 SINGLE PULSE RθJA = 357°C/W TA = 25°C 4 3 2 1 0 0.001 0.01 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE f = 1 MHz VGS = 0 V CISS 4 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA o 0.2 0.1 RθJA = 357 C/W 0.1 0.05 0.01 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. FDV305N Rev D (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTâ CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I2