PD - 96384A AUTOMOTIVE GRADE AUIRF2807 HEXFET® Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS D G S 75V RDS(on) max. 13mΩ ID(Silicon Limited) 82A h ID (Package Limited) 75A D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB AUIRF2807 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Max. 82 58 75 280 230 1.5 ±20 340 43 23 5.9 c Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw c dg c e A W W/°C V mJ A mJ V/ns -55 to + 175 °C 300 (1.6mm from case ) 10 lbf in (1.1N m) y Thermal Resistance RθJC RθCS RθJA Units h Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) y Parameter Typ. Max. Units Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ––– 0.50 ––– 0.65 ––– 62 °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 11/09/11 AUIRF2807 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage Parameter 75 ––– ––– V Conditions ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.074 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage ––– ––– 13 VGS = 10V, ID = 43A 2.0 ––– 4.0 mΩ V gfs IDSS Forward Transconductance 38 ––– ––– S VDS = 50V, ID = 43A Drain-to-Source Leakage Current ––– ––– 25 μA VDS = 75V, VGS = 0V ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 0V, ID = 250μA f VDS = VGS, ID = 250μA f VDS = 60V, VGS = 0V, TJ = 150°C nA VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Total Gate Charge Qgs Gate-to-Source Charge ––– ––– 29 Qgd Gate-to-Drain ("Miller") Charge ––– ––– 55 VGS = 10V, See Fig.6 and 13 td(on) Turn-On Delay Time ––– 13 ––– VDD = 38V tr Rise Time ––– 64 ––– td(off) Turn-Off Delay Time ––– 49 ––– tf Fall Time ––– 48 ––– LD Internal Drain Inductance LS Internal Source Inductance ––– ––– 160 ––– 4.5 ––– ––– 7.5 ––– Ciss Input Capacitance ––– 3820 ––– Coss Output Capacitance ––– 610 ––– Crss Reverse Transfer Capacitance ––– 130 ––– Min. Typ. Max. ID = 43A nC VDS = 60V f ID = 43A ns RG = 2.5Ω VGS = 10V,, See Fig.10 Between lead, nH f D 6mm (0.25in.) Between lead, G S and center of die contact VGS = 0V pF VDS = 25V ƒ = 1.0MHz, See Fig.5 Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current c h ––– ––– 82 ––– ––– 280 ––– ––– 1.2 Units Conditions MOSFET symbol A VSD (Body Diode) Diode Forward Voltage trr Reverse Recovery Time ––– 100 150 ns Qrr Reverse Recovery Charge ––– 410 610 nC ton Forward Turn-On Time V showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 43A, VGS = 0V TJ = 25°C, IF = 43A di/dt = 100A/μs f S f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25°C, L = 370μH, RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12) ISD ≤ 43A, di/dt ≤ 300A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400μs; duty cycle ≤ 2%. This is a calculated value limited to TJ = 175°C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 2 www.irf.com AUIRF2807 Qualification Information † Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-TO-220 N/A Class M4(+/- 800V )††† (per AEC-Q101-002) Class H1C(+/- 2000V )††† (per AEC-Q101-001) Class C5(+/- 2000V )††† (per AEC-Q101-005) Yes † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† ††† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage www.irf.com 3 AUIRF2807 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 4.5V 20μs PULSE WIDTH TJ = 25 °C 10 0.1 1 10 4.5V 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 10 4.0 V DS = 25V 20μs PULSE WIDTH 5.0 6.0 7.0 8.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 9.0 10 100 Fig 2. Typical Output Characteristics 1000 TJ = 175 ° C 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics TJ = 25 ° C 20μs PULSE WIDTH TJ = 175 ° C 10 0.1 VDS , Drain-to-Source Voltage (V) 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP ID = 71A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRF2807 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 6000 Coss = Cds + Cgd 5000 Ciss 4000 3000 Coss 2000 Crss 1000 20 VGS , Gate-to-Source Voltage (V) 7000 10 VDS = 60V VDS = 37V VDS = 15V 16 12 8 4 0 1 ID = 43A 0 100 FOR TEST CIRCUIT SEE FIGURE 13 0 1000 ID, Drain-to-Source Current (A) 1000 100 10 TJ = 25 ° C 1 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 120 160 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 175 ° C 0.1 0.0 80 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD , Reverse Drain Current (A) 40 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 2.4 100μsec 10 1msec Tc = 25°C Tj = 175°C Single Pulse 1 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF2807 100 VGS 80 ID , Drain Current (A) RD V DS LIMITED BY PACKAGE D.U.T. RG + -V DD 60 V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 20 0 Fig 10a. Switching Time Test Circuit 25 50 75 100 125 150 TC , Case Temperature ( ° C) 175 VDS 90% Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com 15V D.U.T RG VGS 20V DRIVER L VDS + V - DD IAS tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) AUIRF2807 600 TOP 500 BOTTOM ID 18A 30A 43A 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. I AS 50KΩ 12V .2μF .3μF Fig 12b. Unclamped Inductive Waveforms D.U.T. + V - DS VGS QG VGS QGS QGD VG 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 7 AUIRF2807 Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG + • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test - V DD V GS * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D= Period P.W. Period V[GS=10V] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% [ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 8 www.irf.com AUIRF2807 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUF2807 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRF2807 Ordering Information Base part AUIRF2807 10 Package Type TO-220 Standard Pack Form Tube Complete Part Number Quantity 50 AUIRF2807 www.irf.com AUIRF2807 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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