AP6906GH-HF
Preliminary
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
BVDSS
60V
▼ Fast Switching Performance
RDS(ON)
40mΩ
▼ Two Independent Device
ID
16.4A
▼ Halogen Free & RoHS Compliant Product
D1 (TAB1)
D2 (TAB2)
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S1 G1
S2
G2
SDPAKTM
SDPAKTM used APEC innovated package and provides two
independent device that is suitable and optimum for DC/DC
power application.
D2
D1
G2
G1
S1
S2
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current
ID@TA=25℃
ID@TA=70℃
16.4
A
3
6.2
A
3
5
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
30
A
PD@TA=25℃
Total Power Dissipation
3
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
6.0
℃/W
42
℃/W
1
20090716pre
AP6906GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
60
-
-
V
VGS=10V, ID=6A
-
-
40
mΩ
VGS=4.5V, ID=4A
-
-
60
mΩ
V
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
gfs
Forward Transconductance
VDS=10V, ID=6A
-
13
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=6A
-
8
12.8
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
VDS=30V
-
5.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=6A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
17
-
ns
tf
Fall Time
RD=5Ω
-
3.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
550
880
pF
Coss
Output Capacitance
VDS=25V
-
75
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
-
Ω
Min.
Typ.
IS=2.5A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
Is=6A, VGS=0V,
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
27
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Rthja is determined with the device, mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6906GH-HF
40
30
ID , Drain Current (A)
T A = 25 C
10V
7.0V
6.0V
5.0V
30
20
V GS =4.0V
T A = 150 o C
ID , Drain Current (A)
o
10V
7.0V
6.0V
5.0V
20
V GS =4.0V
10
10
0
0
0
2
4
6
8
0
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
Fig 2. Typical Output Characteristics
2.0
60
ID=6A
V G =10V
ID=4A
o
Normalized RDS(ON)
T A =25 C
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
50
1.6
1.2
40
0.8
30
0.4
2
4
6
8
-50
10
V GS ,Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
10
Normalized VGS(th) (V)
IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.4
1
0.6
2
0
0.2
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6906GH-HF
10
f=1.0MHz
800
ID=6A
V DS = 48 V
600
C iss
C (pF)
VGS , Gate to Source Voltage (V)
8
6
400
4
200
2
C oss
C rss
0
0
0
4
8
12
1
16
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this area
limited by RDS(ON)
10
ID (A)
100us
1
1ms
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=75 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4