2SK3747 Ordering number : EN7767B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3747 High-Voltage, High-Speed Switching Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Attachment workability is good by Mica-less package Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) ID IDP Allowable Power Dissipation PD Unit 1500 V ±35 V PW≤10μs, duty cycle≤1% Tc=25°C 2 A 4 A 3.0 W 50 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 41 mJ 2 A Avalanche Current *2 Note : *1 VDD=50V, L=20mH, IAV=2A (Fig.1) *2 L≤20mH, single pulse Package Dimensions Product & Package Information unit : mm (typ) 7538A-002 • Package : TO-3PF-3L • JEITA, JEDEC : SC-94 • Minimum Packing Quantity : 30 pcs./magazine 2SK3747-1E 5.5 4.5 15.5 3.0 Marking Electrical Connection 10.0 3.6 K3747 3.5 2.0 5.0 25.0 24.5 2 LOT No. 19.3 2.0 2.0 4.0 0.75 2 3 3.3 1 5.45 5.45 1 2.0 0.9 3 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PF-3L http://semicon.sanyo.com/en/network 52312 TKIM TC-00002763/62005QB MSIM TB-00001301 / 81004QB TSIM TB-00000018 No.7767-1/7 2SK3747 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Ratings Conditions min typ 1500 ID=1mA, VGS=0V VDS=1200V, VGS=0V Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=16V, VDS=0V VDS=10V, ID=1mA 2.5 Forward Transfer Admittance | yfs | VDS=20V, ID=1A 0.7 Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD μA ±10 μA 1.4 10 IS=2A, VGS=0V V S 13 Ω 380 pF 70 pF 40 pF 12 ns 37 ns 152 ns 59 ns 37.5 nC VDS=200V, VGS=10V, ID=2A 2.7 nC 20 nC 0.88 1.2 V Fig.2 Switching Time Test Circuit VIN L VDD=200V 10V 0V ID=1A RL=200Ω VIN 2SK3747 D VDD 50Ω 100 3.5 See Fig.2 ≥50Ω 10V 0V Unit V VDS=30V, f=1MHz Fig.1 Avalanche Resistance Test Circuit max VOUT PW=10μs D.C.≤0.5% G 2SK3747 P.G RGS=50Ω S Ordering Information Device 2SK3747-1E Package Shipping memo TO-3PF-3L 30pcs./magazine Pb Free No.7767-2/7 2SK3747 ID -- VDS 4.0 VDS=20V pulse 8V 2.5 6V 2.0 1.5 5V 1.0 Tc= --25°C 2.5 10V 3.0 Drain Current, ID -- A Drain Current, ID -- A 3.5 ID -- VGS 3.0 Tc=25°C pulse 2.0 25°C 1.5 75°C 1.0 0.5 0.5 VGS=4V 0 0 0 5 10 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V 50 0 4 6 8 10 12 14 16 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=1A VGS=10V Tc=75°C 25°C 10 --25°C 5 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V | yfs | -- ID °C 25 1.0 5 --25 0 25 5°C --2 °C 75 3 2 5 7 2 0.1 3 5 7 Drain Current, ID -- A 2 1.0 150 IT07133 3 2 0.1 7 5 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V 1.2 IT07135 Ciss, Coss, Crss -- VDS 5 f=1MHz 3 2 Ciss, Coss, Crss -- pF td(off) 2 100 tf 7 5 3 tr 2 1000 7 5 Ciss 3 2 Co ss 100 7 5 Crss 3 2 td(on) 10 0.1 125 1.0 7 5 IT07134 VDD=200V VGS=10V 3 100 3 2 0.01 0.2 3 SW Time -- ID 5 75 VGS=0V 3 2 3 50 IS -- VSD 10 7 5 2 = Tc 5 Case Temperature, Tc -- °C 3 7 10 IT07132 VDS=20V 0.1 Switching Time, SW Time -- ns 20 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 18 15 0 --50 0 0 20 5°C 25°C --25°C 15 25 Tc= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 20 20 IT07131 RDS(on) -- Tc 30 ID=1A 25 18 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 30 2 IT07130 10 2 3 5 7 1.0 Drain Current, ID -- A 2 3 IT09037 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT09038 No.7767-3/7 2SK3747 VGS -- Qg 10 3 2 n Drain Current, ID -- A io 2 3 at 3 er 4 m s 0m s 10 op 5 s 6 10 1.0 7 5 0μ s 1m 7 10 ID=2A 2 8 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 1 0 10 0 20 30 Total Gate Charge, Qg -- nC Tc=25°C Single pulse 0.01 1.0 40 2 3 5 7 10 Allowable Power Dissipation, PD -- W 2.5 2.0 1.5 1.0 0.5 5 7 100 2 3 5 71000 2 3 IT07139 PD -- Tc 60 3.0 2 3 Drain-to-Source Voltage, VDS -- V IT07138 PD -- Ta 3.5 Allowable Power Dissipation, PD -- W IDP=4A(PW≤10μs) C D Gate-to-Source Voltage, VGS -- V 9 ASO 7 5 VDS=200V ID=2A 50 40 30 20 10 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07140 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT07141 No.7767-4/7 2SK3747 Magazine Specification 2SK3747-1E No.7767-5/7 2SK3747 Outline Drawing 2SK3747-1E Mass (g) Unit 5.5 mm * For reference No.7767-6/7 2SK3747 Note on usage : Since the 2SK3747 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2012. Specifications and information herein are subject to change without notice. PS No. 7767-7/7