ON EN8952A Bipolar transistor 50v, 0.5a, low vce(sat) npn single mcph6 Datasheet

Ordering number : EN8952A
MCH6544
Bipolar Transistor
http://onsemi.com
50V, 0.5A, Low VCE(sat) NPN Single MCPH6
Applicaitons
•
Relay drivers, lamp drivers, motor drivers
Features
•
•
Composite type with an NPN transistor contained in one package facilitating high-density mounting
Ultrasmall package facilitates miniaturization in end products
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Total Power Dissipation
Ratings
Unit
60
V
50
V
VEBO
IC
5
ICP
PC
Collector Dissipation
Conditions
VCBO
VCEO
Junction Temperature
PT
Tj
Storage Temperature
Tstg
500
When mounted on ceramic substrate (600mm2×0.8mm) 1unit
When mounted on ceramic substrate (600mm2×0.8mm)
V
mA
1.5
A
0.5
W
0.55
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7022A-011
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
6
5
Packing Type : TL
2
TL
3
0.65
ES
LOT No.
0 to 0.02
1
Marking
4
LOT No.
0.25
MCH6544-TL-E
0.15
2.1
1.6
0.25
2.0
0.3
0.07
0.85
Electrical Connection
1
2
3
1 : Emitter1
2 : Base1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Collector1
6
5
4
MCPH6
Semiconductor Components Industries, LLC, 2013
August, 2013
6
5
4
1
2
3
91912 TKIM/51408EA TIIM TC-00001383 No.8952-1/7
MCH6544
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Conditions
Ratings
min
typ
max
ICBO
IEBO
VCB=40V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=10mA
Gain-Bandwidth Product
hFE
fT
VCE=10V, IC=50mA
500
Output Capacitance
Cob
2.8
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VCB=10V, f=1MHz
IC=100mA, IB=10mA
Emitter Cutoff Current
DC Current Gain
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
300
IC=100mA, IB=10mA
Unit
100
nA
100
nA
800
MHz
pF
50
100
mV
0.9
1.2
V
V(BR)CBO
V(BR)CEO
IC=10μA, IE=0A
60
V
IC=1mA, RBE=∞
50
V
V(BR)EBO
ton
IE=10μA, IC=0A
5
tstg
tf
See specified Test Circuit.
V
30
ns
340
ns
55
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
VR
RB
RL
50Ω
+
220μF
VBE= --5V
+
470μF
VCC=25V
IC=20IB1= --20IB2=200mA
Ordering Information
Device
MCH6544-TL-E
Package
Shipping
memo
MCPH6
3,000pcs./reel
Pb Free
No.8952-2/7
MCH6544
IC -- VCE
350
A
500
3mA
300
2mA
250
1mA
600μA
200
150
200μA
100
400
300
Ta=7
5°C
25°C
--25°C
10m
20m
400
VCE=2V
5mA
Collector Current, IC -- mA
A 1
5m
7mA
8mA
30mA
Collector Current, IC -- mA
450
IC -- VBE
600
A
500
200
100
50
IB=0μA
400
500
600
700
900
800
Collector-to-Emitter Voltage, VCE -- mV
0
0.6
0.8
1.0
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
2
100
7
5
3
2
1.2
IT05107
VCE(sat) -- IC
IC / IB=10
VCE=2V
25°C
--25°C
5
0.4
Base-to-Emitter Voltage, VBE -- V
3
Ta=75°C
7
0.2
IT05106
hFE -- IC
1000
DC Current Gain, hFE
0
1000
2
100
7
75
°C
300
5
Ta
=
200
3
25
°C
5°
C
100
--2
0
0
2
10
7
10
1.0
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
75
°C
5
25
°C
5°
C
Ta
=
7
3
2
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
5 7 100
2
3
IC / IB=50
3
2
°C
75
C
5°
--2
100
7
°C
25
5
=
Ta
3
2
2
3
5 7 10
2
3
5 7 100
2
25°C
1.0
Ta= --25°C
7
75°C
5
f=1MHz
Output Capacitance, Cob -- pF
2
3
IT05110
Cob -- VCB
IC / IB=20
3
5 7 1000
3
Collector Current, IC -- mA
10
5
5 7 1000
IT05411
VCE(sat) -- IC
IT05109
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
5
10
1.0
5 7 1000
VBE(sat) -- IC
10
2
7
100
3
5 7 10
1000
2
2
3
Collector Current, IC -- mA
IC / IB=20
10
1.0
2
IT05108
--2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
5
1.0
5 7 1000
7
5
3
2
2
0.1
1.0
2
3
5 7 10
2
3
5 7 100
Collector Current, IC -- mA
2
3
5 7 1000
IT05111
1.0
1.0
2
3
5
7
10
2
3
Collector-to-Base Voltage, VCB -- V
5
7
100
IT05112
No.8952-3/7
MCH6544
fT -- IC
1000
100
7
5
7
5
3
2
OUT
IN
1kΩ
2
IB
10
7
5
3
2
1.0
7
5
3
2
100
1.0
2
3
5 7 10
2
3
5 7 100
2
Collector Current, IC -- mA
3
5 7 1000
IT05113
PD -- Ta
0.6
Allowable Power Dissipation, PD -- W
1kΩ
f=1MHz
3
ON Resistance, Ron -- Ω
Gain-Bandwidth Product, fT -- MHz
VCE=10V
Ron -- IB
0.1
0.1
2
3
5
7
1.0
2
Base Current, IB -- mA
3
5
7
10
IT06092
When mounted on ceramic substrate
(600mm2✕0.8mm)
0.55
0.5
0.4
To
t
0.3
1u
al
ni
di
t
ss
ip
at
io
n
0.2
0.1
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT10744
No.8952-4/7
MCH6544
Embossed Taping Specification
MCH6544-TL-E
No.8952-5/7
MCH6544
Outline Drawing
MCH6544-TL-E
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No.8952-6/7
MCH6544
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PS No.8952-7/7
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