CEP93A3/CEB93A3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 150A, RDS(ON) = 3.0 mΩ @VGS = 10V. RDS(ON) = 6.0 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. D G G S CEB SERIES TO-263(DD-PAK) G D S ABSOLUTE MAXIMUM RATINGS Parameter CEP SERIES TO-220 Tc = 25 C unless otherwise noted Symbol Limit 30 Units V VGS ±20 V ID 150 A Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S IDM a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C 600 A 83.3 W 0.67 W/ C Single Pulsed Avalanche Energy d EAS 1058 mJ Single Pulsed Avalanche Current d IAS 46 A TJ,Tstg -55 to 175 C Operating and Store Temperature Range Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 1.5 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W Rev 2. 2010.Sep. http://www.cetsemi.com Details are subject to change without notice . 1 CEP93A3/CEB93A3 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 30V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 10 uA IGSSR VGS = -20V, VDS = 0V -10 uA Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA 3 V VGS = 10V, ID = 50A 1 2.3 3 mΩ VGS = 4.5V, ID = 40A 4 6 mΩ VDS = 10V, ID = 15A 27 S 4100 pF 980 pF 600 pF 24 ns 19 ns 128 ns Dynamic Characteristics c Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω Turn-Off Fall Time tf 72 ns Total Gate Charge Qg 60 nC Gate-Source Charge Qgs 12 nC Gate-Drain Charge Qgd 25 nC VDS = 15V, ID = 16A, VGS = 5V Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 20A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 1mH, IAS =46A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C 2 100 A 1.2 V CEP93A3/CEB93A3 200 VGS=10,9,8,7V 150 VGS=4V ID, Drain Current (A) ID, Drain Current (A) 180 120 90 60 VGS=3V 30 0 0 1 2 3 4 5 1.5 3 4.5 6 7.5 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 6000 Ciss 4000 Coss 2000 Crss 0 5 10 15 20 25 2.2 1.9 ID=50A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 0 -55 C VDS, Drain-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 25 C 40 6 8000 1.2 80 TJ=125 C 10000 1.3 120 0 12000 0 160 -25 0 25 50 75 100 125 VGS=0V 10 2 10 1 10 0 0.4 150 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 5 VDS=15V ID=16A 4 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP93A3/CEB93A3 3 2 1 0 0 12 24 36 48 10 3 10 2 100ms 1ms 10ms DC 10 10 60 RDS(ON)Limit 1 TC=25 C TJ=150 C Single Pulse 0 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 0.02 0.01 Single Pulse 10 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -2 10 -5 t2 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 2