MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR12KM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12KM-14 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 2.6 ± 0.2 ➀➁➂ ➁ ................................................................ 12A ● VDRM ................................................................. 700V ● IFGT ! , IRGT ! , IRGT # .................................... 30mA ● Viso .................................................................. 2000V ● IT (RMS) ➀ 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ✽ Measurement point of case temperature ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ ➂ GATE TERMINAL TO-220FN APPLICATION Switching mode power supply, light dimmer, electric flasher unit, hair driver, control of household equipment such as TV sets • stereo • refrigerator • washing machine • infrared kotatsu • carpet, solenoid drivers, small motor control, copying machine, electric tool MAXIMUM RATINGS Symbol Voltage class Parameter V DRM Repetitive peak off-state V DSM Non-repetitive peak off-state voltage✽1 Symbol Unit 14 voltage✽1 700 840 Conditions Ratings Unit I T (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=81°C I TSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive 12 120 A A I 2t I 2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 60 A2s PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM I GM Peak gate voltage Peak gate current Tj T stg Junction temperature Storage temperature — Viso Parameter V V Weight Isolation voltage Typical value Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case 5 W 0.5 10 W V 2 –40 ~ +125 A °C –40 ~ +125 2.0 °C g 2000 V ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR12KM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. — Typ. — Max. 2.0 Unit I DRM Repetitive peak off-state current Tj=125°C, VDRM applied V TM V FGT ! On-state voltage Tc=25°C, I TM=20A, Instantaneous measurement — — — — 1.6 1.5 V RGT ! V RGT # Gate trigger voltage Tj=25°C, V D=6V, RL=6Ω, RG=330Ω — — — — 1.5 1.5 V V — — 30 — — — — 30 30 mA mA 0.2 — — — — 3.0 °C/ W ✽2 — — V/µs ! @ # I FGT ! I RGT ! Gate trigger current I RGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM Rth (j-c) Thermal resistance Junction to case ✽3 (dv/dt)c Critical-rate of rise of off-state commutating voltage ! @ Tj=25°C, V D=6V, RL=6Ω, RG=330Ω # mA V V mA V ✽2. The critical-rate of rise of the off-state commutating voltage is shown in the table below. ✽3. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W. Voltage class VDRM (V) 14 (dv/dt)c Symbol Min. R — 700 V/µs L Test conditions Unit 10 Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125°C SUPPLY VOLTAGE 2. Rate of decay of on-state commutating current (di/dt)c=–6.0A/ms MAIN CURRENT 3. Peak off-state voltage VD=400V MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT 102 7 5 3 2 101 7 5 3 2 200 Tj = 125°C Tj = 25°C 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999