FDD8444L_F085 tm ® N-Channel PowerTrench MOSFET 40V, 50A, 6.0mΩ Features Applications Typ rDS(on) = 3.8mΩ at VGS = 5V, ID = 50A Automotive Engine Control Typ Qg(tot) = 46nC at VGS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architecture and VRMs Qualified to AEC Q101 Primary Switch for 12V and 24V systems A REE I DF M ENTATIO LE N MP LE RoHS Compliant ©2009 Fairchild Semiconductor Corporation FDD8444L_F085 Rev A (W) 1 www.fairchildsemi.com FDD8444L_F085 N-Channel PowerTrench® MOSFET January 2009 Symbol VDSS Drain to Source Voltage VGS Parameter PD ±20 V (Note 1) 50 Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) 16 Pulsed EAS Units V Gate to Source Voltage Drain Current Continuous (TC < 150°C, VGS = 10V) ID Ratings 40 A See Figure 4 Single Pulse Avalanche Energy (Note 2) 295 mJ Power Dissipation 153 W Derate above 25oC 1.02 W/oC -55 to +175 oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case 2 Thermal Resistance, Junction to Ambient TO-252, 1in copper pad area 0.98 o C/W 52 o C/W Package Marking and Ordering Information Device Marking FDD8444L Device FDD8444L_F085 Package TO-252AA Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V 40 - - - - 1 - - 250 VGS = ±20V - - ±100 nA VGS = VDS, ID = 250µA 1 1.8 3 V ID = 50A, VGS= 10V - 3.5 5.2 ID = 50A, VGS= 5V - 3.8 6.0 ID = 50A, VGS= 4.5V - 4.0 6.5 ID = 50A, VGS= 5V, TJ = 175oC - 6.8 10.7 VDS = 25V, VGS = 0V, f = 1MHz - 5530 - pF - 605 - pF pF VDS = 32V, VGS = 0V TJ = 150oC µA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 400 - RG Gate Resistance f = 1MHz - 1.7 - Ω Qg(TOT) Total Gate Charge at 5V VGS = 0 to 5V - 46 60 nC VGS = 0 to 2V Qg(TH) Threshold Gate Charge Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller“ Charge FDD8444L_F085 Rev A (W) 2 VDD = 20V ID = 50A Ig = 1.0mA - 5.4 7 nC - 16.3 - nC - 10.9 - nC - 21 - nC www.fairchildsemi.com FDD8444L_F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 104 ns td(on) Turn-On Delay Time - 18.7 - ns tr Turn-On Rise Time - 46 - ns td(off) Turn-Off Delay Time - 42 - ns tf Turn-Off Fall Time - 19.2 - ns toff Turn-Off Time - - 96 ns ISD = 50A - 0.9 1.25 ISD = 25A - 0.8 1.0 VDD = 20V, ID = 50A VGS = 5V, RGS = 2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 50A, dIF/dt = 100A/µs V - 34 44 ns - 29 38 nC Notes: 1: Package current limitation is 50A. 2: Starting TJ = 25oC, L = 0.37mH, IAS = 40A. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD8444L_F085 Rev A (W) 3 www.fairchildsemi.com FDD8444L_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25oC unless otherwise noted 140 1.0 120 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 VGS = 10V CURRENT LIMITED BY PACKAGE 100 80 VGS = 5V 60 40 20 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 25 175 Figure 1. Normalized Power Dissipation vs Case Temperature 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 -5 10 -4 -3 10 -2 10 10 t, RECTANGULAR PULSE DURATION(s) -1 0 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 4000 IDM, PEAK CURRENT (A) VGS = 10V 1000 TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 100 10 -5 10 SINGLE PULSE -4 10 -3 -2 10 10 t, RECTANGULAR PULSE DURATION(s) -1 10 0 10 Figure 4. Peak Current Capability FDD8444L_F085 Rev A (W) 4 www.fairchildsemi.com FDD8444L_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 10us 100 100us 10 LIMITED BY PACKAGE 1 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE 10ms TJ = MAX RATED o TC = 25 C o STARTING TJ = 150 C 1 0.01 200 ID, DRAIN CURRENT (A) TJ = 175 C TJ = 25oC TJ = -55oC 20 0 0.5 1.0 1.5 2.0 2.5 3.0 10 100 VGS = 5V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 150 VGS = 3.5V VGS = 4V 100 50 VGS = 3V 0 3.5 VGS = 10V 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics 30 ID = 50A 25 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 20 15 10 TJ = 175oC 5 0 TJ = 25oC 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDD8444L_F085 Rev A (W) 1000 Figure 6. Unclamped Inductive Switching Capability o 40 1 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 VDD = 5V 60 0.1 tAV, TIME IN AVALANCHE (ms) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 10 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 80 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) o STARTING TJ = 25 C 100 Figure 5. Forward Bias Safe Operating Area 100 100 DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 5 1.8 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 50A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDD8444L_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 1.10 VGS = VDS ID = 250µA 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 1.0 0.8 0.6 0.4 0.2 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss Coss 1000 Crss f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 Figure 13. Capacitance vs Drain to Source Voltage FDD8444L_F085 Rev A (W) 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 100 0.1 ID = 250uA 10 ID = 50A VDD = 15V 8 VDD = 20V 6 VDD = 25V 4 2 0 0 20 40 60 Qg, GATE CHARGE(nC) 80 100 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDD8444L_F085 N-Channel PowerTrench® MOSFET Typical Characteristics FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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