TOSHIBA TK12A65D

TK12A65D
MOSFETs
Silicon N-Channel MOS (π-MOS)
TK12A65D
1. Applications
•
Switching Voltage Regulators
2. Features
(1)
Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.)
(2)
High forward transfer admittance: |Yfs| = 6.0 S (typ.)
(3)
Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)
(4)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate (G)
2: Drain (D)
3: Source (S)
TO-220SIS
 unless otherwise specified)
25
4. Absolute Maximum Ratings (Note) (Ta = 25
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Unit
VDSS
650
V
VGSS
±30
ID
12
(Note 1)
IDP
48
PD
50
W
EAS
611
mJ
IAR
12
A
(Note 2)
Avalanche current
Repetitive avalanche energy
Rating
(Note 1)
(Tc = 25)
Single-pulse avalanche energy
Symbol
EAR
5.0
mJ
Channel temperature
Tch
150

Storage temperature
Tstg
-55 to 150
Note:
(Note 3)
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
/W
Channel-to-case thermal resistance
Rth(ch-c)
2.5
Channel-to-ambient thermal resistance
Rth(ch-a)
62.5
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 7.5 mH, RG = 25 Ω, IAR = 12 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
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6. Electrical Characteristics
 unless otherwise specified)
6.1. Static Characteristics (Ta = 25
25
Characteristics
Symbol
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Test Condition
IGSS
VGS = ±30 V, VDS = 0 V
IDSS
VDS = 650 V, VGS = 0 V
Min
Typ.
Max
Unit


±1
µA


10
V(BR)DSS
ID = 10 mA, VGS = 0 V
650


Vth
V
VDS = 10 V, ID = 1 mA
2.0

4.0
Drain-source on-resistance
RDS(ON)
VGS = 10 V, ID = 6 A

0.46
0.54
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 6 A
1.7
6.0

S
Min
Typ.
Max
Unit

2300

pF

10


200


35

 unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Characteristics
Symbol
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Test Condition
VDS = 25 V, VGS = 0 V, f = 1 MHz
Switching time (rise time)
tr
Switching time (turn-on time)
ton

90

tf

20

toff

150

Switching time (fall time)
Switching time (turn-off time)
See Figure 6.2.1.
ns
Fig. 6.2.1 Switching Time Test Circuit
 unless otherwise specified)
6.3. Gate Charge Characteristics (Ta = 25
25
Characteristics
Symbol
Test Condition
VDD ≈ 400 V, VGS = 10 V, ID = 12 A
Min
Typ.
Max
Unit

40

nC
Total gate charge (gate-source plus
gate-drain)
Qg
Gate-source charge
Qgs

28

Gate-drain charge
Qgd

12

Min
Typ.
Max
Unit
12
A
 unless otherwise specified)
6.4. Source-Drain Characteristics (Ta = 25
25
Characteristics
Symbol
Reverse drain current (DC)
(Note 1)
Reverse drain current (pulsed)
(Note 1)
Test Condition
IDR



IDRP



48
Diode forward voltage
VDSF
IDR1 = 12 A, VGS = 0 V


-1.7
V
Reverse recovery time
trr

1400

ns
Reverse recovery charge
Qrr
IDR = 12 A, VGS = 0 V
-dIDR/dt = 100 A/µs

16

µC
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7. Marking (Note)
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 |Yfs| - ID
Fig. 8.6 RDS(ON) - ID
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Fig. 8.7 RDS(ON) - Ta
Fig. 8.8 IDR - VDS
Fig. 8.9 C - VDS
Fig. 8.10 Vth - Ta
Fig. 8.11 PD - Tc
(Guaranteed Maximum)
Fig. 8.12 Dynamic Input/Output Characteristics
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Fig. 8.13 rth/Rth(ch-c) - tw
(Guaranteed Maximum)
Fig. 8.14 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.15 EAS - Tch
(Guaranteed Maximum)
Fig. 8.16 Test Circuit/Waveform
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Package Dimensions
Unit: mm
Weight: 1.7 g (typ.)
Package Name(s)
JEITA: SC-67
TOSHIBA: 2-10U1S
Nickname: TO-220SIS
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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