DMP10H4D2S 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Low Gate Threshold Voltage ID TA = +25°C Low Input Capacitance 4.2Ω @ VGS = -10V Fast Switching Speed -0.27A Small Surface Mount Package 5.0Ω @ VGS = -4.0V -0.24A BVDSS PRODUCT INFORMATION ADVANCED NEW Features and Benefits RDS(ON) -100V ESD Protected up to 2KV (HBM) Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) D SOT23 D G S G ESD protected up to 2kV Gate Protection Diode Top View Pin Configuration Top View S Equivalent Circuit Ordering Information (Note 4) Part Number DMP10H4D2S-7 DMP10H4D2S-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information P10 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: E = 2017) M = Month (ex: 9 = September) P10 Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMP10H4D2S Document number: DS37891 Rev. 3 - 2 Mar 3 2017 E Apr 4 2018 F May 5 Jun 6 1 of 6 www.diodes.com 2019 G Jul 7 2020 H Aug 8 Sep 9 2021 I Oct O 2022 J Nov N Dec D May 2017 © Diodes Incorporated DMP10H4D2S Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage PRODUCT INFORMATION ADVANCED NEW Continuous Drain Current (Note 6) VGS = -10V TA = +25°C TA = +70°C Steady State Value -100 ±20 -0.27 -0.21 -1.0 -0.42 ID Pulsed Drain Current (10μs Pulse, Duty Cycle 1%) Maximum Body Diode Continuous Current (Note 6) IDM IS Unit V V A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics Steady State Value 0.38 0.44 333 282 115 -55 to +150 PD RθJA RθJA RθJC TJ, TSTG Unit W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -100 1 ±10 V µA μA VGS = 0V, ID = -250µA VDS = -100V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) -2.3 2.8 3.2 -0.82 -3.0 4.2 5.0 -1.3 V Static Drain-Source On-Resistance -1.0 Ω VDS = VGS, ID = -250µA VGS = -10V, ID = -0.5A VGS = -4.0V, ID = -0.1A VGS = 0V, IS = -0.2A 87 5.6 2.9 pF VDS = -25V, VGS = 0V, f = 1.0MHz 15.3 1.8 0.3 0.5 3.3 2.6 8.4 4.9 17.8 24.8 Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -80V, VGS = -10V, ID = -0.5A ns VDS = -50V, ID = -0.5A, VGS = -10V, RG = 10Ω ns nC VR = -100V, IF = -1.0A, di/dt = 100A/µs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: VSD Ciss Coss Crss RG Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR V Test Condition 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP10H4D2S Document number: DS37891 Rev. 3 - 2 2 of 6 www.diodes.com May 2017 © Diodes Incorporated DMP10H4D2S 0.6 1.0 VDS= -5V VGS=-4.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.5 0.8 VGS=-10V 0.6 VGS=-3.5V 0.4 0.2 VGS=-2.8V 0.4 85℃ 0.3 0.2 125℃ 25℃ 150℃ 0.1 VGS=-3.0V -55℃ 0.0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 5 5 4.5 VGS=-4V 4 3.5 VGS=-10V 3 2.5 2 0 0.2 0.4 0.6 1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.8 6 4 ID=-500mA 2 ID=-100mA 0 0 7 6 150℃ 5 125℃ 85℃ 4 25℃ 3 -55℃ 2 1 4 8 12 16 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS=-10V 4 8 1 8 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 10 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) PRODUCT INFORMATION ADVANCED NEW VGS=-4.5V 0 2 1.8 VGS=-10V, ID=-500mA 1.6 1.4 1.2 VGS=-4.0V, ID=-100mA 1 0.8 0.6 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMP10H4D2S Document number: DS37891 Rev. 3 - 2 3 of 6 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature May 2017 © Diodes Incorporated DMP10H4D2S VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 6 5 VGS=-4.0V, ID=-100mA 4 3 VGS=-10V, ID=-500mA 2 2.8 2.6 2.4 ID=-1mA 2.2 ID=-250μA 2 1.8 1.6 1 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 1 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 1000 CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) f=1MHz 0.8 VGS=0V, TJ=85℃ 0.6 VGS=0V, TJ=125℃ 0.4 VGS=0V, TJ=150℃ 0.2 VGS=0V, TJ=25℃ Ciss 100 Coss 10 Crss VGS=0V, TJ=-55℃ 1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.5 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 40 10 10 RDS(ON) Limited PW =100μs 6 ID, DRAIN CURRENT (A) 8 VGS (V) PRODUCT INFORMATION ADVANCED NEW 7 VDS=-80V, ID=-0.5A 4 PW =1ms 1 PW =10ms 0.1 PW =100ms PW =1s TJ(MAX)=150℃ TC=25℃ PW =10s VGS=10V Single Pulse DC DUT on 1*MRP Board 0.01 2 0.001 0 0 0.5 1 1.5 Qg, TOTAL GATE CHARGE (nC) Figure 11. Gate Charge DMP10H4D2S Document number: DS37891 Rev. 3 - 2 2 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 1000 Figure 12. SOA, Safe Operation Area 4 of 6 www.diodes.com May 2017 © Diodes Incorporated DMP10H4D2S PRODUCT INFORMATION ADVANCED NEW r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t)=r(t) * RθJA RθJA=336℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F G DMP10H4D2S Document number: DS37891 Rev. 3 - 2 5 of 6 www.diodes.com SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm May 2017 © Diodes Incorporated DMP10H4D2S Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PRODUCT INFORMATION ADVANCED NEW SOT23 Y Dimensions C X X1 Y Y1 C Y1 X Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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