LED DOT MATRIX BL-M23X881 Features: 60.20mm (2.3”) Φ5.0 dot matrix LED display. Low current operation. Excellent character appearance. Easy mounting on P.C. Boards or sockets. I.C. Compatible. ROHS Compliance. Super Bright Electrical-optical characteristics: (Ta=25 ) (Test Condition: IF=20mA) Part No VF Unit:V Chip Row Cathode Column Anode Row Anode Column Cathode Emitted Color BL-M23A881S-XX BL-M23B881S-XX Hi Red Super Red Ultra Red Typ Max TYP.(mcd) GaAlAs/GaAs,SH 660 1.85 2.20 280 GaAlAs/GaAs,DH 660 GaAlAs/GaAs,DDH 660 BL-M23A881D-XX BL-M23B881D-XX BL-M23A881UR-XX BL-M23B881UR-XX BL-M23A881E-XX BL-M23B881E-XX Orange GaAsP/GaP BL-M23A881Y-XX BL-M23B881Y-XX Yellow GaAsP/GaP BL-M23A881G-XX BL-M23B881G-XX GaP/GaP m o c . x u l t e b Green Ultra Bright Electrical-optical characteristics: (Ta=25 ) Iv λP (nm) Material 635 585 570 1.85 2.20 310 1.85 2.20 450 2.10 2.50 220 2.10 2.50 220 2.20 2.50 250 (Test Condition: IF=20mA) BL-M23A881UE-XX . w w BL-M23B881UE-XX Ultra Orange BL-M23A881YO-XX BL-M23B881YO-XX Ultra Amber AlGaInP 619 2.10 2.50 255 BL-M23A881UY-XX BL-M23B881UY-XX Ultra Yellow AlGaInP 590 2.10 2.50 255 BL-M23A881UG-XX BL-M23B881UG-XX Ultra Green AlGaInP 574 2.20 2.50 380 BL-M23A881PG-XX BL-M23B881PG-XX Ultra Pure Green InGaN 525 3.80 4.50 560 BL-M23A881B-XX BL-M23B881B-XX Ultra Blue InGaN 470 2.70 4.20 270 BL-M23A881W-XX BL-M23B881W-XX Ultra White InGaN / 2.70 4.20 350 Part No Row Cathode Column Anode w BL-M23A881UHR-XX Row Anode Column Cathode VF Unit:V Chip Emitted Color Material Iv λP (nm) Typ Max TYP.(mcd) BL-M23B881UHR-XX Ultra Red AlGaInP 645 2.10 2.50 450 AlGaInP 630 2.10 2.50 255 ·-XX: Surface / Lens color 0 Number Ref Surface Color White Epoxy Color Water clear 1 2 3 4 Black White diffused Gray Red Diffused Red Green Diffused Green Yellow Diffused APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] 5 LED DOT MATRIX BL-M23X881 Absolute maximum ratings (Ta=25 ) Parameter Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature TOPR S D UR E Y G Unit 25 60 5 25 60 5 25 60 5 25 60 5 25 60 5 30 65 5 mA mW V 150 150 150 150 150 150 mA Storage Temperature TSTG -40 to +85 Lead Soldering Temperature Max.260±5 for 3 sec Max. (1.6mm from the base of the epoxy bulb) TSOL Absolute maximum ratings (Ta=25°C) Parameter UHR Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature TOPR Storage Temperature TSTG 30 75 5 150 . w w Lead Soldering Temperature TSOL -40 to +80 UE YO . x UY 30 65 5 30 65 5 30 65 5 150 150 150 m o c UG u l t e b 30 75 5 150 PG B W U nit mA 30 110 5 30 120 5 30 120 5 mW 150 100 100 mA -40 to +80 -40 to +85 Max.260±5 for 3 sec Max. (1.6mm from the base of the epoxy bulb) w APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 2 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] V LED DOT MATRIX BL-M23X881 Package configuration & Internal circuit diagram m o c . x . w w u l t e b w Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is ±0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice. APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 3 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] LED DOT MATRIX BL-M23X881 Typical electrical-optical characteristics curves: (A) 1.0 (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10) 0.5 0 350 400 500 450 550 600 650 700 750 800 850 900 950 1000 Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH( p ) (1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red 8 64 5 2 3 40 e b . w w 30 20 10 0 1.2 1.6 2.0 2.4 1 3.0 2.6 2.0 1.0 20 FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE 1 5 4 2 3 60 80 0.2 -10 0 10 20 30 40 50 60 20 6 2,4,8,A 3 5 10 20 40 60 80 100 AMBIENT TEMPERATURE Ta( ) FORWARD CURRENT VS. AMBIENT TEMPERATURE 300KHz 3KHz 10KHz 1KHz 100KHz F-REFRESH RATE 4 3 3KHz 300Hz 30KHz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 4 3 2 70 1 AMBIENT TEMPERATURE Ta( ) 30 1 0 100 2 -20 40 Ipeak MAX. IDC MAX. 0.5 0.1 -30 40 10 9 8 7 6 5 Ipeak MAX. IDC MAX. RELATIVE LUMINOUS INTENSITY 1 B FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT w 3 2 5 50 0 3.0 m o c . x lt u 4.0 FORWARD CURRENT(mA) FORWARD CURRENT(mA) RELATIVE LUMINOUS INTENSITY 1 50 (9) - GaAlAs 880nm (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (D) - InGaAl/SiC 525nm/Ultra Green 1 10 100 1000 tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) NOTE:25 10,000 1 1 10 100 1000 tp-PULSE DURATION uS (5) free air temperature unless otherwise specified APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 4 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] 10,000