Dallas DS1330ABP-70 256k nonvolatile sram with battery monitor Datasheet

DS1330Y/AB
256k Nonvolatile SRAM
with Battery Monitor
www.maxim-ic.com
FEATURES
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10 years minimum data retention in the
absence of external power
Data is automatically protected during power loss
Power supply monitor resets processor when
VCC power loss occurs and holds processor in
reset during VCC ramp-up
Battery monitor checks remaining capacity
daily
Read and write access times as fast as 70ns
Unlimited write cycle endurance
Typical standby current 50mA
Upgrade for 32k x 8 SRAM, EEPROM or
Flash
Lithium battery is electrically disconnected to
retain freshness until power is applied for the
first time
Full ±10% VCC operating range (DS1330Y)
or optional ±5% VCC operating range
(DS1330AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides
lithium backup battery
- Standardized pinout for all nonvolatile (NV)
SRAM products
- Detachment feature on PowerCap allows easy
removal using a regular screwdriver
PIN ASSIGNMENT
BW
NC
NC
RST
VCC
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
GND VBAT
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
NC
NC
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
PIN DESCRIPTION
A0 – A14
DQ0 – DQ7
CE
WE
OE
RST
BW
VCC
GND
NC
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Reset Output
- Battery Warning
- Power (+5V)
- Ground
- No Connect
DESCRIPTION
The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8
bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly
monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source
is automatically switched on and write protection is unconditionally enabled to prevent data corruption.
Additionally, the DS1330 devices have dedicated circuitry for monitoring the status of VCC and the status
of the internal lithium battery. DS1330 devices in the PowerCap module package are directly surface
mountable and are normally paired with a DS9034PC PowerCap to form a complete NV SRAM module.
The devices can be used in place of 32k x 8 SRAM, EEPROM, or Flash components.
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110201
DS1330Y/AB
READ MODE
The DS1330 devices execute a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip
Enable) and OE (Output Enable) are active (low). The unique address specified by the 15 address inputs
(A0 – A14) defines which of the 32,768 bytes of data is to be accessed. Valid data will be available to the
eight data output drivers within tACC (Access Time) after the last address input signal is stable, providing
that CE and OE (Output Enable) access times are also satisfied. If OE and CE access times are not
satisfied, then data access must be measured from the later occurring signal ( CE or OE ) and the limiting
parameter is either tCO for CE or tOE for OE rather than address access.
WRITE MODE
The DS1330 devices execute a write cycle whenever the WE and CE signals are in the active (low) state
after address inputs are stable. The later-occurring falling edge of CE or WE will determine the start of
the write cycle. The write cycle is terminated by the earlier rising edge of CE or WE . All address inputs
must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery
time (tWR) before another cycle can be initiated. The OE control signal should be kept inactive (high)
during write cycles to avoid bus contention. However, if the output drivers are enabled ( CE and OE
active) then WE will disable the outputs in tODW from its falling edge.
DATA RETENTION MODE
The DS1330AB provides full-functional capability for VCC greater than 4.75V and write protects by
4.5V. The DS1330Y provides full-functional capability for VCC greater than 4.5V and write protects by
4.25V. Data is maintained in the absence of VCC without any additional support circuitry. The NV
SRAMs constantly monitor VCC. Should the supply voltage decay, the NV SRAMs automatically write
protect themselves, all inputs become “don’t care,” and all outputs become high-impedance. As VCC falls
below approximately 2.7V, the power switching circuit connects the lithium energy source to RAM to
retain data. During power-up, when VCC rises above approximately 2.7V, the power switching circuit
connects external VCC to the RAM and disconnects the lithium energy source. Normal RAM operation
can resume after VCC exceeds 4.75V for the DS1330AB and 4.5V for the DS1330Y.
SYSTEM POWER MONITORING
DS1330 devices have the ability to monitor the external VCC power supply. When an out-of-tolerance
power supply condition is detected, the NV SRAMs warn a processor-based system of impending power
failure by asserting RST . On power-up, RST is held active for 200ms nominal to prevent system
operation during power-on transients and to allow tREC to elapse. RST has an open drain output driver.
BATTERY MONITORING
The DS1330 devices automatically perform periodic battery voltage monitoring on a 24-hour time
interval. Such monitoring begins within tREC after VCC rises above VTP and is suspended when power
failure occurs.
After each 24-hour period has elapsed, the battery is connected to an internal 1MW test resistor for one
second. During this one second, if battery voltage falls below the battery voltage trip point (2.6V), the
battery warning output BW is asserted. Once asserted, BW remains active until the module is replaced.
The battery is still retested after each VCC power-up, however, even if BW is active. If the battery voltage
is found to be higher than 2.6V during such testing, BW is de-asserted and regular 24-hour testing
resumes. BW has an open drain output driver.
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DS1330Y/AB
PACKAGES
The 34-pin PowerCap module integrates SRAM memory and NV control along with contacts for
connection to the lithium battery in the DS9034PC PowerCap. The PowerCap module package design
allows a DS1330 PCM device to be surface mounted without subjecting its lithium backup battery to
destructive high-temperature reflow soldering. After a DS1330 PCM is reflow soldered, a DS9034PC is
snapped on top of the PCM to form a complete NV SRAM module. The DS9034PC is keyed to prevent
improper attachment. DS1330 PowerCap modules and DS9034PC PowerCaps are ordered separately and
shipped in separate containers. See the DS9034PC data sheet for further information.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
*
-0.3V to +7.0V
0°C to 70°C, -40°C to +85°C for IND parts
-40°C to +70°C, -40°C to +85°C for IND parts
260°C for 10 seconds
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
DS1330AB Power Supply Voltage
(tA: See Note 10)
SYMBOL
VCC
MIN
4.75
TYP
5.0
MAX
5.25
UNITS
V
DS1330Y Power Supply Voltage
VCC
4.5
5.0
5.5
V
Logic 1
VIH
2.2
VCC
V
Logic 0
VIL
0.0
0.8
V
DC ELECTRICAL
CHARACTERISTICS
PARAMETER
NOTES
(VCC = 5V ± 5% for DS1330AB)
(tA: See Note 10) (VCC = 5V ± 10% for DS1330Y)
SYMBOL
MIN
Input Leakage Current
IIL
I/O Leakage Current CE ³ VIH £ VCC
TYP
MAX
UNITS
-1.0
+1.0
mA
IIO
-1.0
+1.0
mA
Output Current @ 2.2V
IOH
-1.0
mA
14
Output Current @ 0.4V
IOL
2.0
mA
14
Standby Current CE =2.2V
ICCS1
200
600
mA
Standby Current CE =VCC-0.5V
ICCS2
50
150
mA
Operating Current
ICCO1
85
mA
Write Protection Voltage (DS1330AB)
VTP
4.50
4.62
4.75
V
Write Protection Voltage (DS1330Y)
VTP
4.25
4.37
4.5
V
3 of 11
NOTES
DS1330Y/AB
CAPACITANCE
(tA = 25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Input Capacitance
CIN
5
10
pF
Input/Output Capacitance
CI/O
5
10
pF
AC ELECTRICAL
CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
NOTES
(VCC = 5V ± 5% for DS1330AB)
(tA: See Note 10) (VCC = 5V ± 10% for DS1330Y)
SYMBOL
tRC
DS1330AB-70
DS1330Y-70
DS1330AB-100
DS1330Y-100
MIN
70
MIN
100
MAX
MAX
UNITS
ns
tACC
70
100
ns
NOTES
OE
to Output Valid
tOE
45
50
ns
CE
to Output Valid
tCO
70
100
ns
OE
or CE to Output Active
tCOE
Output High Z from Deselection
tOD
Output Hold from Address
Change
tOH
5
5
ns
Write Cycle Time
tWC
70
100
ns
Write Pulse Width
tWP
55
75
ns
Address Setup Time
tAW
0
0
ns
Write Recovery Time
tWR1
tWR2
5
12
5
12
ns
12
13
Output High Z from WE
tODW
ns
5
Output Active from WE
tOEW
5
5
ns
5
Data Setup Time
tDS
30
40
ns
4
Data Hold Time
tDH1
tDH2
0
7
0
7
ns
12
13
5
5
25
35
25
READ CYCLE
SEE NOTE 1
4 of 11
35
ns
5
ns
5
3
DS1330Y/AB
WRITE CYCLE 1
SEE NOTES 2, 3, 4, 6, 7, 8, and 12
WRITE CYCLE 2
SEE NOTES 2, 3, 4, 6, 7, 8, and 13
5 of 11
DS1330Y/AB
POWER-DOWN/POWER-UP CONDITION
BATTERY WARNING DETECTION
6 of 11
DS1330Y/AB
POWER-DOWN/POWER-UP TIMING
PARAMETER
VCC Fail Detect to CE and WE Inactive
VCC slew from VTP to 0V
VCC Fail Detect to RST Active
(tA: See Note 10)
SYMBOL
tPD
MIN
tF
150
TYP
MAX
1.5
UNITS
ms
NOTES
11
ms
tRPD
15
150
14
ms
VCC slew from 0V to VTP
tR
VCC Valid to CE and WE Inactive
tPU
2
ms
VCC Valid to End of Write Protection
tREC
125
ms
VCC Valid to RST Inactive
tRPU
350
ms
14
VCC Valid to BW Valid
tBPU
1
s
14
150
ms
200
BATTERY WARNING TIMING
PARAMETER
Battery Test Cycle
Battery Test Pulse Width
Battery Test to BW Active
(tA: See Note 10)
SYMBOL
tBTC
MIN
TYP
24
MAX
UNITS
hr
tBTPW
1
s
tBW
1
s
NOTES
(tA = 25°C)
PARAMETER
Expected Data Retention Time
SYMBOL
tDR
MIN
10
TYP
MAX
UNITS
years
NOTES
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1. WE is high for a Read Cycle.
2. OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high-impedance state.
3. tWP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4. tDS is measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output
buffers remain in a high-impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in high-impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high-impedance state during this period.
7 of 11
DS1330Y/AB
9. Each DS1330 has a built-in switch that disconnects the lithium source until VCC is first applied by the
user. The expected tDR is defined as accumulative time in the absence of VCC starting from the time
power is first applied by the user.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.
11. In a power-down condition the voltage on any pin may not exceed the voltage on VCC.
12. tWR1 and tDH1 are measured from WE going high.
13. tWR2 and tDH2 are measured from CE going high.
14. RST and BW are open drain outputs and cannot source current. External pull-up resistors should be
connected to these pins for proper operation. Both pins will sink 10mA.
DC TEST CONDITIONS
AC TEST CONDITIONS
Outputs Open
Cycle = 200ns for operating current
All voltages are referenced to ground
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0 – 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
DS1330 TTP - SSS - III
Operating Temperature Range
blank: 0° to 70°
IND: -40° to +85°C
Access Speed
70:
70ns
100: 100ns
Package Type
P:
34-pin PowerCap Module
VCC Tolerance
AB: ±5%
Y:
±10%
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DS1330Y/AB
DS1330Y/AB NONVOLATILE SRAM, 34-PIN POWERCAP MODULE
9 of 11
INCHES
PKG
DIM
MIN
NOM
MAX
A
0.920
0.925
0.930
B
0.980
0.985
0.990
C
-
-
0.080
D
0.052
0.055
0.058
E
0.048
0.050
0.052
F
0.015
0.020
0.025
G
0.020
0.025
0.030
DS1330Y/AB
DS1330Y/AB NONVOLATILE SRAM, 34-PIN POWERCAP MODULE WITH
POWERCAP
INCHES
PKG
DIM
MIN
NOM
MAX
A
0.920
0.925
0.930
B
0.955
0.960
0.965
C
0.240
0.245
0.250
D
0.052
0.055
0.058
E
0.048
0.050
0.052
F
0.015
0.020
0.025
G
0.020
0.025
0.030
ASSEMBLY AND USE
Reflow soldering
Dallas Semiconductor recommends that PowerCap Module bases experience one pass through solder
reflow oriented label-side up (live-bug).
Hand soldering and touch-up
Do not touch soldering iron to leads for more than 3 seconds. To solder, apply flux to the pad, heat the
lead frame pad and apply solder. To remove part, apply flux, heat pad until solder reflows, and use a
solder wick.
LPM replacement in a socket
To replace a Low Profile Module in a 68-pin PLCC socket, attach a DS9034PC PowerCap to a module
base then insert the complete module into the socket one row of leads at a time, pushing only on the
corners of the cap. Never apply force to the center of the device. To remove from a socket, use a PLCC
extraction tool and ensure that it does not hit or damage any of the module IC components. Do not use
any other tool for extraction.
10 of 11
DS1330Y/AB
RECOMMENDED POWERCAP MODULE LAND PATTERN
PKG
DIM
INCHES
MIN
NOM
MAX
A
-
1.050
-
B
-
0.826
-
C
-
0.050
-
D
-
0.030
-
E
-
0.112
-
RECOMMENDED POWERCAP MODULE SOLDER STENCIL
11 of 11
INCHES
PKG
DIM
MIN
NOM
MAX
A
-
1.050
-
B
-
0.890
-
C
-
0.050
-
D
-
0.030
-
E
-
0.080
-
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