BUZ 102S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS(on) 0.018 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 52 A • dv/dt rated • 175 ˚C operating temperature Type Package Ordering Code Packaging BUZ102S P-TO220-3-1 Q67040-S4011-A2 Tube BUZ102S E3045A P-TO263-3-2 Q67040-S4011-A6 Tape and Reel BUZ102S E3045 P-TO263-3-2 Q67040-S4011-A5 Tube Maximum Ratings, at Tj = 25 ˚C unless unless specified Parameter Symbol Continuous drain current Pin 1 Pin 2 Pin 3 G D S Value A ID TC = 25 ˚C 52 TC = 100 ˚C 37 Pulsed drain current Unit IDpulse 208 EAS 245 EAR 12 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 120 W -55... +175 ˚C TC = 25 ˚C Avalanche energy, single pulse mJ ID = 52 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS = 52 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C TC = 25 ˚C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 Data Book 55/175/56 1 05.99 BUZ 102S Thermal Characteristics Symbol Parameter Values min. typ. Unit max. Characteristics Thermal resistance, junction - case RthJC - 1.25 Thermal resistance, junction - ambient, leded RthJA - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area1) - - 40 K/W Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 2.1 3 4 Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage, VGS = VDS ID = 90 µA Zero gate voltage drain current µA IDSS VDS = 50 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 50 V, VGS = 0 V, Tj = 150 ˚C - - 100 - 10 100 Gate-source leakage current IGSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 10 V, ID = 37 A - 0.0155 0.018 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Book 2 05.99 BUZ 102S Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. g fs 10 28 - S Ciss - 1220 1525 pF Coss - 410 515 Crss - 210 265 td(on) - 12 18 tr - 22 33 td(off) - 30 45 tf - 25 40 Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 37 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 10 V, ID = 52 A, RG = 6.8 Ω Rise time VDD = 30 V, VGS = 10 V, ID = 52 A, RG = 6.8 Ω Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 52 A, RG = 6.8 Ω Fall time VDD = 30 V, VGS = 10 V, ID = 52 A, RG = 6.8 Ω Data Book 3 05.99 BUZ 102S Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qgs - 8 12 Qgd - 23 34.5 Qg - 45 70 V(plateau) - 5.9 - V IS - - 52 A I SM - - 208 VSD - 1.2 1.7 V t rr - 70 105 ns Q rr - 0.15 0.25 µC Dynamic Characteristics Gate to source charge nC VDD = 40 V, ID = 52 A Gate to drain charge VDD = 40 V, ID = 52 A Gate charge total VDD = 40 V, ID = 52 A, V GS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 52 A Reverse Diode Inverse diode continuous forward current TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 104 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Book 4 05.99 BUZ 102S Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ≥ 10 V BUZ102S BUZ102S 2.8 60 W A 2.4 50 2.2 45 40 1.8 ID Ptot 2.0 1.6 35 1.4 30 1.2 25 1.0 20 0.8 15 0.6 10 0.4 5 0.2 0.0 0 20 40 60 80 0 0 100 120 140 160 ˚C 190 20 40 60 80 100 120 140 160 ˚C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 ˚C parameter : D = tp /T 10 3 BUZ102S 10 1 BUZ102S K/W A 10 0 tp = 19.0µs DS ID /I D Z thJC 10 2 10 -1 = V 100 µs DS (o n) 10 -2 R D = 0.50 0.20 10 1 10 1 ms -3 0.10 0.05 10 ms 0.02 single pulse 10 -4 0.01 DC 10 0 -1 10 10 0 10 1 V 10 10 -5 -7 10 2 VDS Data Book 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 05.99 BUZ 102S Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS BUZ102S 130 BUZ102S Ptot = 120W 0.060 A Ω l k j VGS [V] a 4.0 i 100 h b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 d k 10.0 l 20.0 90 ID g 80 70 f 60 e 50 40 30 b c d e f g h 0.050 0.045 RDS(on) 110 0.040 0.035 0.030 0.025 i 0.020 j k 0.015 c 20 0.010 b VGS [V] = 10 0.005 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 l V 5.0 0.000 0 VDS b 4.5 c 5.0 d 5.5 20 e f 6.0 6.5 g 7.0 40 60 h i 7.5 8.0 j 9.0 80 k l 10.0 20.0 A 120 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 µs Typ. forward transconductance VDS ≥ 2 x I D x RDS(on) max parameter: gfs gfs = f(ID ); Tj = 25˚C 80 35 S A ID gfs 25 20 40 15 10 20 5 0 2 3 4 5 V 0 0 7 VGS Data Book 10 20 30 40 50 A 70 ID 6 05.99 BUZ 102S Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 90 µA parameter : ID = 37 A, VGS = 10 V BUZ102S 5.0 V 0.065 Ω 4.4 0.055 4.0 VGS(th) RDS(on) 0.050 0.045 0.040 3.6 3.2 2.8 0.035 max 2.4 0.030 0.025 98% 2.0 typ 1.6 typ 0.020 1.2 0.015 0.8 0.010 min 0.4 0.005 0.000 -60 0.0 -60 -20 20 60 100 140 ˚C -20 20 60 100 140 200 ˚C 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 BUZ102S A pF IF 10 2 C Ciss 10 3 10 1 Coss Tj = 25 ˚C typ Tj = 175 ˚C typ Crss Tj = 25 ˚C (98%) Tj = 175 ˚C (98%) 10 2 0 10 20 V 10 0 0.0 40 VDS Data Book 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 BUZ 102S Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 52 A, V DD = 25 V VGS = f (QGate ) RGS = 25 Ω parameter: ID puls = 52 A BUZ102S 260 16 mJ V 220 200 12 VGS EAS 180 160 10 0,2 VDS max 140 0,8 VDS max 8 120 100 6 80 4 60 40 2 20 0 20 40 60 80 100 120 140 ˚C 0 0 180 Tj 10 20 30 40 50 70 nC Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BUZ102S 66 V V(BR)DSS 64 62 60 58 56 54 52 50 -60 -20 20 60 100 140 ˚C 200 Tj Data Book 8 05.99