AP25N10GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Single Drive Requirement
▼ RoHS Compliant & Halogen-Free
BVDSS
100V
RDS(ON)
80mΩ
ID
G
23A
S
Description
AP25N10 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP25N10GJ) are available for low-profile
applications.
G
G
D
D
S
S
TO-252(H)
TO-251(J)
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
.
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
23
A
ID@TC=100℃
Drain Current, VGS @ 10V
14.6
A
80
A
96
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.3
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount) 3
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
201410214
AP25N10GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
100
-
-
V
VGS=10V, ID=16A
-
-
80
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=16A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (T j=125 C) VDS=80V, VGS=0V
-
-
250
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=16A
-
19
30
nC
Qgs
Gate-Source Charge
VDS=80V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6
-
nC
td(on)
Turn-on Delay Time
VDD=50V
-
10
-
ns
tr
Rise Time
ID=16A
-
28
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
17
-
ns
tf
Fall Time
VGS=10V
-
2
-
ns
Ciss
Input Capacitance
VGS=0V
-
1060 1700
pF
Coss
Output Capacitance
VDS=25V
-
270
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
8
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
3
Ω
Min.
Typ.
IS=16A, VGS=0V
-
-
1.3
V
o
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=16A, VGS=0V
-
90
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
380
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP25N10GH/J-HF
50
40
10V
9 .0V
8 .0V
7.0V
T C =25 C
ID , Drain Current (A)
40
10V
9 .0V
8 .0V
7.0V
T C = 150 o C
ID , Drain Current (A)
o
30
20
30
20
V G = 5 .0V
10
V G = 5 .0V
10
0
0
0
2
4
6
8
10
0
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
130
2.4
I D = 12 A
I D =16A
V G =10V
T C =25 o C
2.0
90
.
Normalized RDS(ON)
RDS(ON) (mΩ)
110
1.6
1.2
70
0.8
0.4
50
2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
20
Normalized VGS(th)
16
IS(A)
12
T j =150 o C
8
T j =25 o C
1.1
0.7
4
0
0.3
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP25N10GH/J-HF
f=1.0MHz
10000
12
I D = 16 A
V DS = 64 V
V DS = 80 V
V DS = 100 V
8
C iss
1000
C oss
C (pF)
VGS , Gate to Source Voltage (V)
10
6
100
4
C rss
10
2
1
0
0
4
8
12
16
20
1
24
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
100us
10
ID (A)
1ms
10ms
100ms
1s
DC
1
.
o
T C =25 C
Single Pulse
0.1
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
25
V DS =5V
o
T j =150 C
o
T j =25 C
VG
ID , Drain Current (A)
20
QG
10V
15
QGS
QGD
10
5
Charge
Q
0
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP25N10GH/J-HF
MARKING INFORMATION
TO-251
25N10GJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
25N10GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
.
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5