CET CED4279 Dual enhancement mode field effect transistor (n and p channel) Datasheet

CED4279/CEU4279
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
D1/D2
40V , 14A , RDS(ON) = 32mΩ @VGS = 10V.
RDS(ON) = 46mΩ @VGS = 4.5V.
-40V , -9A , RDS(ON) = 72mΩ @VGS = 10V.
RDS(ON) = 110mΩ @VGS = 4.5V.
G1
G2
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
S1
D1/D2
Lead free product is acquired.
S2
S1
G1
TO-252-4L package.
S2
G2
CEU SERIES
TO-252-4L
ABSOLUTE MAXIMUM RATINGS
Parameter
Tc = 25 C unless otherwise noted
Symbol
N-Channel
40
P-Channel
40
Units
V
VGS
±20
±20
V
ID e
14
-9
A
IDM
56
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current-Continuous e
Drain Current-Pulsed
a
Maximum Power Dissipation @ TC = 25 C
PD
- Derate above 25 C
Operating and Store Temperature Range
-36
A
10.4
W
0.08
W/ C
TJ,Tstg
-55 to 150
C
Thermal Characteristics
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
Parameter
RθJC
12
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
50
C/W
Rev 2. 2007.Jan
http://www.cetsemi.com
Details are subject to change without notice .
1
CED4279/CEU4279
N-Channel Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
40
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 40V, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics
Gate Threshold Voltage
VGS(th)
Static Drain-Source
RDS(on)
On-Resistance
Dynamic Characteristics
VGS = VDS, ID = 250µA
3
V
VGS = 10V, ID = 8A
1
25
32
mΩ
VGS = 4.5V, ID = 6A
35
46
mΩ
d
Forward Transconductance
gFS c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 5V, ID = 8A
VDS = 20V, VGS = 0V,
f = 1.0 MHz
10
S
1055
pF
160
pF
100
pF
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 20V, ID = 6A,
VGS = 10V, RGEN = 3Ω
15
30
ns
11
22
ns
18
36
ns
Turn-Off Fall Time
tf
19
38
ns
Total Gate Charge
Qg
10
13.3
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 20V, ID = 6A,
VGS = 4.5V
3.7
nC
4.2
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A.
2
8
A
1.2
V
CED4279/CEU4279
P-Channel Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
-40
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = -40V, VGS = 0V
-1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
-4
V
VGS = -10V, ID = -8A
-2
60
72
mΩ
VGS = -4.5V, ID = -6A
90
110
mΩ
Dynamic Characteristics d
Forward Transconductance c
gFS c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -5V, ID = -8A
VDS = -20V, VGS = 0V,
f = 1.0 MHz
10
S
710
pF
130
pF
80
pF
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6Ω
11
22
ns
3
6
ns
32
64
ns
Turn-On Fall Time
tf
5
10
ns
Total Gate Charge
Qg
5.8
7.7
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = -20V, ID = -4.5A,
VGS = -4.5V
1.9
nC
2.5
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = -1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A.
3
-8
A
-1.2
V
CED4279/CEU4279
N-CHANNEL
10
50
25 C
8
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10,8,6V
6
4
2
40
5
30
20
10
TJ=125 C
VGS=3.0V
0
0
1
2
3
4
0
5
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
750
500
Coss
250
Crss
0
5
10
15
20
25
2.2
1.9
ID=8A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
8
Figure 2. Transfer Characteristics
Ciss
1.1
1.0
0.9
0.8
0.7
0.6
-50
6
Figure 1. Output Characteristics
1000
1.2
4
VGS, Gate-to-Source Voltage (V)
1250
1.3
2
VDS, Drain-to-Source Voltage (V)
1500
0
0
-55 C
-25
0
25
50
75
100
125
150
VGS=0V
10
1
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4
CED4279/CEU4279
P-CHANNEL
15
-VGS=10,8V
20
-ID, Drain Current (A)
-ID, Drain Current (A)
25
-VGS=5.0V
15
10
-VGS=4.0V
5
0
0
0.5
1
1.5
2
TJ=125 C
0
-55 C
2
4
6
8
Figure 7. Output Characteristics
Figure 8. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
450
300
Coss
150
Crss
0
5
10
15
20
25
2.2
1.9
ID=-8A
VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 9. Capacitance
Figure 10. On-Resistance Variation
with Temperature
VDS=VGS
-IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
3
-VGS, Gate-to-Source Voltage (V)
Ciss
ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
6
0
600
1.2
9
-VDS, Drain-to-Source Voltage (V)
750
1.3
12
2.5
900
0
25 C
-25
0
25
50
75
100
125
150
VGS=0V
10
1
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 11. Gate Threshold Variation
with Temperature
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5
CED4279/CEU4279
10
5 V =20V
DS
ID=6A
4
3
2
1
0
0
2
4
6
8
10
10
0
10
-1
-2
1ms
10ms
TC=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
0
10
1
VDS, Drain-Source Voltage (V)
Figure 13. Gate Charge
Figure 14. Maximum Safe
Operating Area
10
2
10
2
10
2
RDS(ON)Limit
4
3
2
1
1
5
100ms
DC
Qg, Total Gate Charge (nC)
-ID, Drain Current (A)
-VGS, Gate to Source Voltage (V)
1
10
5 V =20V
DS
ID=4.5A
0
10
10
12
P-CHANNEL
0
2
RDS(ON)Limit
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
N-CHANNEL
2
3
4
5
10
1
10
0
10
-1
10
6
-2
10
1ms
10ms
100ms
DC
TC=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
0
10
1
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 15. Gate Charge
Figure 16. Maximum Safe
Operating Area
6
CED4279/CEU4279
VDD
t on
RL
V IN
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 18. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 17. Switching Test Circuit
10
0
D=0.5
0.2
10
PDM
0.1
-1
t1
0.05
0.02
0.01
Single Pulse
10
-2
10
-2
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 19. Normalized Thermal Transient Impedance Curve
7
10
3
10
4
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