ECH8410 Ordering number : ENA1331A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8410 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 4V drive. Halogen free compliance. Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 12 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 60 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Product & Package Information Package Dimensions • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel unit : mm (typ.) 7011A-002 Top View ECH8410-TL-H 0.25 2.9 Packing Type : TL Marking 0.15 8 5 KQ 2.3 Lot No. TL 4 1 0.9 0.65 Electrical Connection 0.3 8 7 6 5 1 2 3 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 2.8 0 t o 0.02 0.25 V Bot t om View 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view SANYO : ECH8 http://semicon.sanyo.com/en/network 50112 TKIM/N2509PE TK IM TC-00002188 No. A1331-1/7 ECH8410 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance typ. Unit max. ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A 7.5 RDS(on)1 ID=6A, VGS=10V 7.5 10 mΩ RDS(on)2 ID=3A, VGS=4.5V 13 18.2 mΩ RDS(on)3 ID=3A, VGS=4V 15.5 22 mΩ Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Turn-OFF Delay Time Ratings min. V(BR)DSS IDSS Input Capacitance Rise Time Conditions 30 V 1.2 1 μA ±10 μA 2.6 V S 1700 pF 300 pF Crss 200 pF td(on) tr 17 ns 50 ns 110 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=15V, VGS=10V, ID=12A IS=12A, VGS=0V 72 ns 31 nC 5.5 nC 5.5 nC 0.8 1.2 V Switching Time Test Circuit VDD=15V 10V 0V VIN PW=10μs D.C.≤1% ID=6A RL=2.5Ω VIN VOUT D G P.G 50Ω S ECH8410 Ordering Information Device ECH8410-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1331-2/7 ECH8410 ID -- VDS 11 10 6 4 8 7 6 5 4 3 2 C 2 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=3A 6A 25 20 15 10 5 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V | yfs | -- ID 7 2 = Ta °C 75 °C 1.0 25 7 5 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 5 0 50 100 tf 5 2 td(on) 10 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 2 200 IT14585 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT14587 Ciss, Coss, Crss -- VDS 2 tr 150 3 td(off) 3 100 f=1MHz 2 7 0.1 10.0 V GS= 5 3 7 4.0 IT14583 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 3 VDD=15V VGS=10V 5 3.5 6A V, I D= 10 IT14586 SW Time -- ID 7 15 0.01 7 5 3 2 0.001 0.2 3 0.1 0.01 3.0 Ambient Temperature, Ta -- °C 10 C 5° --2 2.5 3A ,I = 4.0V D = VGS =3A V, I D =4.5 S VG 20 3 2 5 2.0 25 IT14584 VDS=10V 3 1.5 RDS(on) -- Ta 0 --50 18 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 2 1.0 30 30 0 0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 35 0 0 IT15056 RDS(on) -- VGS 40 0 1.0 --25 °C 0.3 C 0.2 25° 0.1 Ta= 75° C 0 25° 1 0 --25° C VGS=3.0V 9 Ta=7 5°C 8 VDS=10V 12 Drain Current, ID -- A 10.0V Drain Current, ID -- A 10 ID -- VGS 13 6.0V 4.5V 4.0V 8.0V 12 3 IT14588 Ciss 1000 7 5 3 Coss 2 Crss 100 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14589 No. A1331-3/7 ECH8410 VGS -- Qg 10 100 7 5 3 2 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 5 10 15 20 25 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 30 35 IT14590 PD -- Ta 1.8 ASO 2 VDS=15V ID=12A 10 7 5 3 2 1.0 7 5 3 2 IDP=60A PW≤10μs 10 0μ s 1m s ID=12A 10 ms 10 0m op era s tio n( Ta =2 Operation in this 5° area is limited by RDS(on). C) DC 0.1 7 5 Ta=25°C 3 2 Single pulse When mounted on 0.01 0.01 2 3 5 7 0.1 ceramic substrate (900mm2×0.8mm) 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT15057 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14986 No. A1331-4/7 ECH8410 Embossed Taping Specification ECH8410-TL-H No. A1331-5/7 ECH8410 Outline Drawing ECH8410-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1331-6/7 ECH8410 Note on usage : Since the ECH8410 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2012. Specifications and information herein are subject to change without notice. PS No. A1331-7/7