AD ADG659YRQ 3 v/5 v/â±5 v cmos 4- and 8-channel analog multiplexer Datasheet

+3 V/+5 V/±5 V CMOS 4- and 8-Channel
Analog Multiplexers
ADG658/ADG659
±2 V to ±6 V dual supply
2 V to 12 V single supply
Automotive temperature range −40°C to +125°C
<0.1 nA leakage currents
45 Ω on resistance over full signal range
Rail-to-rail switching operation
Single 8-to-1 multiplexer ADG658
Differential 4-to-1 multiplexer ADG659
16-lead LFCSP/TSSOP/QSOP packages
Typical power consumption <0.1 µW
TTL/CMOS compatible inputs
Package upgrades to 74HC4051/74HC4052 and
MAX4051/MAX4052/MAX4581/MAX4582
APPLICATIONS
Automotive applications
Automatic test equipment
Data acquisition systems
Battery-powered systems
Communication systems
Audio and video signal routing
Relay replacement
Sample-and-hold systems
Industrial control systems
GENERAL DESCRIPTION
The ADG658 and ADG659 are low voltage, CMOS analog
multiplexers comprised of eight single channels and four
differential channels, respectively. The ADG658 switches one of
eight inputs (S1–S8) to a common output, D, as determined by
the 3-bit binary address lines A0, A1, and A2. The ADG659
switches one of four differential inputs to a common differential
output, as determined by the 2-bit binary address lines A0 and
A1. An EN input on both devices is used to enable or disable
the device. When disabled, all channels are switched off.
These parts are designed on an enhanced process that provides
lower power dissipation yet gives high switching speeds. These
parts can operate equally well as either multiplexers or
demultiplexers and have an input range that extends to the
supplies. All channels exhibit break-before-make switching
action, preventing momentary shorting when switching
channels. All digital inputs have 0.8 V to 2.4 V logic thresholds,
ensuring TTL/CMOS logic compatibility when using single
+5 V or dual ±5 V supplies.
The ADG658 and ADG659 are available in 16-lead TSSOP/
QSOP packages and 16-lead 4 mm × 4 mm LFCSP packages.
PRODUCT HIGHLIGHTS
1. Single- and dual-supply operation.
The ADG658 and ADG659 offer high performance and are
fully specified and guaranteed with ±5 V, +5 V, and +3 V
supply rails.
2. Automotive temperature range −40°C to +125°C.
3. Low power consumption, typically <0.1 µW.
4. 16-lead 4 mm × 4 mm LFCSP packages, 16-lead TSSOP
package and 16-lead QSOP package.
FUNCTIONAL BLOCK DIAGRAM
ADG659
ADG658
S1
S1A
DA
S4A
D
S1B
DB
S8
S4B
1 OF 8
DECODER
A0
A1
A2
1 OF 4
DECODER
EN
A0
A1
SWITCHES SHOWN FOR A LOGIC 1 INPUT
EN
03273-0-001
FEATURES
Figure 1.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703
© 2004 Analog Devices, Inc. All rights reserved.
ADG658/ADG659
TABLE OF CONTENTS
Specifications: Dual Supply ............................................................. 3
Pin Configuration and Function Descriptions........................... 11
Specifications: Single Supply 5V..................................................... 5
Typical Performance Characteristics ........................................... 13
Specifications: Single Supply 2.7 to 3.6 V...................................... 7
Test Circuits ................................................................................ 16
Absolute Maximum Ratings............................................................ 9
Outline Dimensions ....................................................................... 19
ESD Caution.................................................................................. 9
Ordering Guide .......................................................................... 20
REVISION HISTORY
7/04—Data Sheet Changed from Rev. 0 to Rev. A
Updated Format.............................................................. Universal
Added QSOP Package Outline .................................................. 20
Changes to Ordering Guide ....................................................... 20
3/03—Rev. 0: Initial Version
Rev. A | Page 2 of 20
ADG658/ADG659
SPECIFICATIONS: DUAL SUPPLY
VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.1
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On Resistance Match between
Channels (∆RON)
On Resistance Flatness (RFLAT(ON))
+25°C
B Version
−40°C
to +85°C
Y Version
−40°C
to+125°C
VSS to VDD
45
75
1.3
3
10
16
90
100
3.2
3.5
17
18
Unit
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
VDD = +4.5 V, VSS = −4.5 V
VS = ±4.5 V, IS = 1 mA;
Test Circuit 1
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
ADG658
ADG659
Channel ON Leakage ID, IS (ON)
ADG658
ADG659
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS2
tTRANS
tON (EN)
tOFF (EN)
Break-Before-Make Time Delay, tBBM
±0.005
±0.2
±0.005
±0.2
±0.1
±0.005
±0.2
±0.1
Off Isolation
Total Harmonic Distortion, THD + N
Channel-to-Channel Crosstalk
(ADG659)
−3 dB Bandwidth
ADG658
ADG659
CS (OFF)
CD (OFF)
ADG658
ADG659
VD = ±4.5 V, VS = m 4.5 V;
Test Circuit 2
±5
±2.5
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
2.4
0.8
V min
V max
µA typ
µA max
pF typ
VIN = VINL or VINH
±1
2
4
−90
0.025
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
pC max
dB typ
% typ
RL = 300 Ω, CL = 35 pF
VS = 3 V; Test Circuit 5
RL = 300 Ω, CL = 35 pF
VS = 3 V; Test Circuit 7
RL = 300 Ω, CL = 35 pF
VS = 3 V; Test Circuit 7
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 3 V; Test Circuit 6
VS = 0 V, RS = 0 Ω,
CL = 1 nF; Test Circuit 8
RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 9
RL = 600 Ω, 2 V p-p, f = 20 Hz to 20 kHz
−90
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 11
210
400
4
MHz typ
MHz typ
pF typ
RL = 50 Ω, CL = 5 pF;
Test Circuit 10
f = 1 MHz
23
12
pF typ
pF typ
f = 1 MHz
f = 1 MHz
±5
±5
±2.5
0.005
2
80
115
80
115
30
45
50
140
165
140
165
50
55
10
Charge Injection
VS = 3.5 V, IS = 1 mA
VDD = +5 V, VSS = −5 V;
VS = ±3 V, IS = 1 mA
VDD = +5.5 V, VSS = −5.5 V
Rev. A | Page 3 of 20
VD = ±4.5 V, VS = m 4.5 V;
Test Circuit 3
VD = VS = ±4.5 V; Test Circuit 4
ADG658/ADG659
Parameter
CD, CS (ON)
ADG658
ADG659
POWER REQUIREMENTS
IDD
+25°C
B Version
−40°C
to +85°C
Y Version
−40°C
to+125°C
28
16
0.01
1
ISS
0.01
1
1
2
Temperature range is as follows: B Version: −40°C to +85°C. Y Version: −40°C to +125°C.
Guaranteed by design; not subject to production test.
Rev. A | Page 4 of 20
Unit
Test Conditions/Comments
pF typ
pF typ
f = 1 MHz
f = 1 MHz
VDD = +5.5 V, VSS = −5.5 V
Digital Inputs = 0 V or 5.5 V
µA typ
µA max
µA typ
µA max
Digital Inputs = 0 V or 5.5 V
ADG658/ADG659
SPECIFICATIONS: SINGLE SUPPLY 5V
VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.1
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On Resistance Match between
Channels (∆RON)
On Resistance Flatness (RFLAT(ON))
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
ADG658
ADG659
Channel ON Leakage ID, IS (ON)
ADG658
ADG659
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS2
tTRANS
tON (EN)
tOFF (EN)
Break-Before-Make Time Delay, tBBM
+25°C
B Version
−40°C
to +85°C
Y Version
−40°C
to +125°C
0 to VDD
85
150
4.5
8
13
160
200
9
14
10
16
±0.005
±0.2
±0.005
±0.2
±0.1
±0.005
±0.2
±0.1
Off Isolation
Channel-to-Channel Crosstalk
(ADG659)
−3 dB Bandwidth
ADG658
ADG659
CS (OFF)
CD (OFF)
ADG658
ADG659
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
VDD = 4.5 V, VSS = 0 V
VS = 0 V to 4.5 V, IS = 1 mA;
Test Circuit 1
VS = 3.5 V, IS = 1 mA
VDD = 5 V, VSS = 0 V
VS = 1.5 V to 4 V, IS = 1 mA
VDD = 5.5 V
VS = 1 V/4.5 V, VD = 4.5 V/1 V;
Test Circuit 2
VS = 1 V/4.5 V, VD = 4.5 V/1 V;
Test Circuit 3
±5
±2.5
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
2.4
0.8
V min
V max
µA typ
µA max
pF typ
VIN = VINL or VINH
±1
0.5
1
−90
−90
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
pC max
dB typ
dB typ
RL = 300 Ω, CL = 35 pF
VS = 3 V; Test Circuit 5
RL = 300 Ω, CL = 35 pF
VS = 3 V; Test Circuit 7
RL = 300 Ω, CL = 35 pF
VS = 3 V; Test Circuit 7
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 3 V; Test Circuit 6
VS = 2.5 V, RS = 0 Ω, CL = 1 nF;
Test Circuit 8
RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 9
RL = 50 Ω, CL = 5 pF; f = 1 MHz;
Test Circuit 11
180
330
5
MHz typ
MHz typ
pF typ
RL = 50 Ω, CL = 5 pF;
Test Circuit 10
f = 1 MHz
29
15
pF typ
pF typ
f = 1 MHz
f = 1 MHz
±5
±5
±2.5
0.005
2
120
200
120
190
35
50
100
270
300
245
280
60
70
10
Charge Injection
Unit
Rev. A | Page 5 of 20
VS = VD = 1 V or 4.5 V, Test Circuit 4
ADG658/ADG659
CD, CS (ON)
ADG658
ADG659
POWER REQUIREMENTS
IDD
30
16
pF typ
pF typ
0.01
1
1
2
Temperature range is as follows: B Version: −40°C to +85°C. Y Version: −40°C to +125°C.
Guaranteed by design; not subject to production test.
Rev. A | Page 6 of 20
µA typ
µA max
f = 1 MHz
f = 1 MHz
VDD = 5.5 V
Digital Inputs = 0 V or 5.5 V
ADG658/ADG659
SPECIFICATIONS: SINGLE SUPPLY 2.7 TO 3.6 V
VDD = 2.7 to 3.6 V, VSS = 0 V, GND = 0 V, unless otherwise noted.1
Table 3.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On Resistance Match between
Channels (∆RON)
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
ADG658
ADG659
Channel ON Leakage ID, IS (ON)
ADG658
ADG659
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS2
tTRANS
tON (EN)
tOFF (EN)
Break-Before-Make Time Delay, tBBM
+25°C
B Version
−40°C
to +85°C
Y Version
−40°C
to +125°C
0 to VDD
185
300
2
4.5
350
400
6
7
±0.005
±0.2
±0.005
±0.2
±0.1
±0.005
±0.2
±0.1
Off Isolation
Channel-to-Channel Crosstalk
(ADG659)
−3 dB Bandwidth
ADG658
ADG659
CS (OFF)
CD (OFF)
ADG658
ADG659
CD, CS (ON)
ADG658
ADG659
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
Ω max
VDD = 2.7 V, VSS = 0 V
VS = 0 V to 2.7 V, IS = 0.1 mA;
Test Circuit 1
VS = 1.5 V, IS = 0.1 mA
VDD = 3.3 V
VS = 1 V/3 V, VD = 3 V/1 V;
Test Circuit 2
VS = 1 V/3 V, VD = 3 V/1 V;
Test Circuit 3
±5
±2.5
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
2.0
0.5
V min
V max
µA typ
µA max
pF typ
VIN = VINL or VINH
±1
1
2
−90
−90
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
pC max
dB typ
dB typ
RL = 300 Ω, CL = 35 pF
VS = 1.5 V; Test Circuit 7
RL = 300 Ω, CL = 35 pF
VS = 1.5 V; Test Circuit 7
RL = 300 Ω, CL = 35 pF
VS = 1.5 V; Test Circuit 7
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 1.5 V; Test Circuit 6
VS = 1.5 V, RS = 0 Ω, CL = 1 nF;
Test Circuit 8
RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 9
RL = 50 Ω, CL = 5 pF; f = 1 MHz;
Test Circuit 11
160
300
5
MHz typ
MHz typ
pF typ
RL = 50 Ω, CL = 5 pF;
Test Circuit 10
f = 1 MHz
29
15
pF typ
pF typ
f = 1 MHz
f = 1 MHz
30
16
pF typ
pF typ
f = 1 MHz
f = 1 MHz
±5
±5
±2.5
0.005
2
200
370
230
370
50
80
200
440
490
440
490
90
110
10
Charge Injection
Unit
Rev. A | Page 7 of 20
VS = VD = 1 V or 3 V, Test Circuit 4
ADG658/ADG659
Parameter
POWER REQUIREMENTS
IDD
1
2
+25°C
B Version
−40°C
to +85°C
Y Version
−40°C
to +125°C
Unit
1
µA typ
µA max
0.01
Temperature range is as follows: B Version: −40°C to +85°C. Y Version: −40°C to +125°C.
Guaranteed by design; not subject to production test.
Rev. A | Page 8 of 20
Test Conditions/Comments
VDD = 3.6 V
Digital Inputs = 0 V or 3.6 V
ADG658/ADG659
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 4.
Parameters
VDD to VSS
VDD to GND
VSS to GND
Analog Inputs1
Digital Inputs1
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max)
Continuous Current, S or D
Operating Temperature Range
Automotive (Y Version)
Industrial (B Version)
Storage Temperature Range
Junction Temperature
θJA Thermal Impedance, 16-Lead
QSOP
θJA Thermal Impedance, 16-Lead
TSSOP
θJA Thermal Impedance (4-Layer
Board),
16-Lead LFCSP
Lead Temperature, Soldering
Vapor Phase (60 sec)
Infrared (15 sec)
ESD
1
Ratings
13 V
−0.3 V to +13 V
+0.3 V to −6.5 V
VSS −0.3 V to VDD +0.3 V
GND −0.3 V to VDD +0.3
V or 10 mA, whichever
occurs first
40 mA
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
20 mA
−40°C to +125°C
−40°C to +85°C
−65°C to +150°C
150°C
104°C/W
150.4°C/W
70°C/W
215°C
220°C
5.5 kV
Over voltages at AX, EN, S, or D are clamped by internal diodes. Current
should be limited to the maximum ratings.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. A | Page 9 of 20
ADG658/ADG659
Table 5. ADG658 Truth Table
A2
A1
A0
EN
Switch Condition
X1
0
0
0
0
1
1
1
1
X
0
0
1
1
0
0
1
1
X
0
1
0
1
0
1
0
1
1
0
0
0
0
0
0
0
0
NONE
1
2
3
4
5
6
7
8
1
X = Don’t Care
Table 6. ADG659 Truth Table
A1
A0
EN
On Switch Pair
X1
0
0
1
1
X
0
1
0
1
1
0
0
0
0
NONE
1
2
3
4
1
X = Don’t Care
Rev. A | Page 10 of 20
ADG658/ADG659
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
S5 1
16
VDD
S1B 1
16
VDD
S7 2
15
S3
S3B 2
15
S3A
14
S2
DB 3
14
S2A
TOP VIEW 13 S1
S6 5 (Not to Scale) 12 S4
S4B 4
ADG658
ADG659
TOP VIEW 13 DA
S2B 5 (Not to Scale) 12 S1A
EN 6
11
A0
EN 6
11
S4A
7
10
A1
7
10
A0
GND 8
9
A2
GND 8
9
A1
VSS
VSS
03273-0-002
D 3
S8 4
5
6
7
VSS
GND
A2
A1
EN 4
8
DB 1
S4B 2
10 S4
S2B 3
9 A0
EN 4
12 S2A
ADG659
TOP VIEW
(Not to Scale)
11 DA
10 S1A
9 S4A
5
6
7
EXPOSED PAD FLOATING
8
03273-A-003
TOP VIEW
(Not to Scale)
11 S1
A1
A0
S6 3
12 S2
ADG658
VSS
D 1
S8 2
16 15 14 13
GND
16 15 14 13
S3A
S3B
S1B
VDD
S3
S7
S5
VDD
Figure 2. 16-Lead TSSOP/QSOP
Figure 3. 4 mm x 4 mm LFCSP
Table 7. Functional Descriptions
Parameter
VDD
VSS
IDD
ISS
GND
S
D
AX
EN
VD (VS)
RON
∆RON
RFLAT(ON)
IS (OFF)
ID (OFF)
ID, IS (ON)
VINL
VINH
IINL (IINH)
CS (OFF)
CD (OFF)
Description
Most Positive Power Supply Potential.
Most Negative Power Supply Potential.
Positive Supply Current.
Negative Supply Current.
Ground (0 V) Reference.
Source Terminal. May be an input or output.
Drain Terminal. May be an input or output.
Logic Control Input.
Active Low Digital Input. When high, device is disabled and all switches are OFF. When low, AXlogic inputs determine ON
switch.
Analog Voltage on Terminals D, S.
Ohmic Resistance between D and S.
On Resistance Match between Any Two Channels, i.e., RONmax − RONmin.
Flatness is defined as the difference between the maximum and minimum value of ON Resistance as measured over the
specified analog signal range.
Source Leakage Current with the Switch OFF.
Drain Leakage Current with the Switch OFF.
Channel Leakage Current with the Switch ON.
Maximum Input Voltage for Logic 0.
Minimum Input Voltage for Logic 1.
Input Current of the Digital Input.
OFF Switch Source Capacitance. Measured with reference to ground.
OFF Switch Drain Capacitance. Measured with reference to ground.
Rev. A | Page 11 of 20
ADG658/ADG659
Parameter
CD, CS (ON)
CIN
tON
tOFF
tBBM
Charge
Injection
Off Isolation
Crosstalk
Bandwidth
On Response
Insertion Loss
Description
ON Switch Capacitance. Measured with reference to ground.
Digital Input Capacitance.
Delay between Applying the Digital Control Input and the Output Switching ON. See Test Circuit 7.
Delay between Applying the Digital Control Input and the Output Switching OFF.
ON Time. Measured between 80% points of both switches when switching from one address state to another.
Measure of the Glitch Impulse Transferred from the Digital Input to the Analog Output during Switching.
Measure of Unwanted Signal Coupling through an OFF Switch.
Measure of Unwanted Signal Coupled through from One Channel to Another as a Result of Parasitic Capacitance.
The Frequency at which the Output is Attenuated by 3 dB.
The Frequency Response of the ON Switch.
The Loss Due to the ON Resistance of the Switch.
Rev. A | Page 12 of 20
ADG658/ADG659
TYPICAL PERFORMANCE CHARACTERISTICS
100
TA = 25°C
140
90
+125°C
VDD, VSS = ±2.7V
80
120
ON RESISTANCE (Ω)
+85°C
60
VDD, VSS = ±3V
50
40
VDD, VSS = ±5.5V
30
VDD, VSS = ±4.5V
100
80
+25°C
60
–40°C
40
20
20
VDD = 5V
VSS = 0V
0
–5.5
–3.5
–1.5
0.5
VD, VS (V)
2.5
03273-0-006
10
4.5
0
0
1.0
0.5
1.5
2.0
2.5
3.0
VD, VS (V)
4.5
5.0
Figure 7. On Resistance vs. VD (VS) for Different Temperatures (Single Supply)
Figure 4. On Resistance vs. VD (VS) for Dual Supply
300
250
TA = 25°C
VDD = 2.7V
+85°C
250
+125°C
ON RESISTANCE (Ω)
200
VDD = 3V
150
VDD = 3.3V
100
VDD = 4.5V
VDD = 5.5V
50
200
150
+25°C
100
VDD = 5V
–40°C
50
VDD = 10V
VDD = 12V
0
0
2
4
6
VD, VS (V)
8
10
12
VDD = 3V
VSS = 0V
03273-0-007
ON RESISTANCE (Ω)
4.0
3.5
03273-0-009
VDD, VSS = ±5V
Figure 5. On Resistance vs. VD (VS) for Single Supply
0
0
0.5
1.0
1.5
VD, VS (V)
2.0
2.5
3.0
03273-0-010
ON RESISTANCE (Ω)
70
Figure 8. On Resistance vs. VD (VS) for Different Temperatures (Single Supply)
100
1.5
90
VDD = 5V
VSS = –5V
VD = ±4V
VS = ±4V
1.0
80
+125°C
IS (OFF)
70
+85°C
60
CURRENT (nA)
+25°C
50
40
–40°C
0
ID (OFF)
–0.5
–1.0
IS, ID (ON)
30
–1.5
20
–2.0
VDD = +5V
VSS = –5V
0
–5
–4
–3
–2
0
–1
1
VD, VS (V)
2
3
4
5
03273-0-008
10
–2.5
0
Figure 6. On Resistance vs. VD (VS) for Different Temperatures (Dual Supply)
Rev. A | Page 13 of 20
20
40
60
80
TEMPERATURE (°C)
100
120
Figure 9. Leakage Current vs. Temperature (Dual Supply)
03273-0-011
ON RESISTANCE (Ω)
0.5
ADG658/ADG659
350
1.5
VDD = +5V
VSS = 0V
VD = ±4V
VS = 1V
1.0
VSS = 0V
±
0.5
250
0
TIME (ns)
ID (OFF)
–0.5
–1.0
200
VDD = 5V
tON
150
IS, ID (ON)
100
–1.5
VDD = +3V
VSS = 0V
VD = ±2.4V
VS = 1V
50
±
–2.5
0
20
40
60
80
TEMPERATURE (°C)
100
120
tOFF
03273-0-012
–2.0
VDD = 3V
0
–40
–20
0
VDD = 5V
20
40
60
80
100
120
TEMPERATURE (°C)
Figure 10. Leakage Current vs. Temperature (Single Supply)
03273-0-015
CURRENT (nA)
VDD = 3V
300
IS (OFF)
Figure 13. tON/tOFF Times vs. Temperature (Single Supply)
14
0
TA = 25°C
–1
12
–2
–3
10
–5
–6
6
dB
QINJ (PC)
–4
8
4
–7
–8
–9
VDD = +5V
VSS = –5V
–10
–11
0
–12
–13
VDD = +5V
VSS = 0V
–4
–5
–4
–3
–2
–1
0
VS (V)
1
3
2
4
–14
5
03273-0-013
–2
VDD = +5V
VSS = –5V
TA = 25°C
–15
100k
1M
10M
FREQUENCY (Hz)
100M
03273-0-016
2
Figure 14. ON Response vs. Frequency (ADG658)
Figure 11. Charge Injection vs. Source Voltage
0
140
VDD = +5V
VSS = –5V
–2
120
–4
–6
tON
–8
–10
dB
80
–12
–14
60
tOFF
–16
40
–18
–22
0
–40
–20
0
20
40
60
TEMPERATURE (°C)
80
100
120
VDD = +5V
VSS = –5V
TA = 25°C
–24
100k
1M
10M
FREQUENCY (Hz)
100M
Figure 15. ON Response vs. Frequency (ADG659)
Figure 12. tON/tOFF Times vs. Temperature (Dual Supply)
Rev. A | Page 14 of 20
03273-0-017
–20
20
03273-0-014
TIME (ns)
100
ADG658/ADG659
0
10000
VDD = +5V
VSS = –5V
TA = 25°C
–20
1000
VDD = 12V
100
–60
–80
1
–100
0.1
100k
1M
10M
FREQUENCY (Hz)
100M
VDD = 3V
0.01
03273-0-018
–120
VDD = 5V
10
0
4
6
V(EN) (V)
8
10
12
10
12
Figure 19. VDD Current vs. Logic Level
Figure 16. OFF Isolation vs. Frequency
3.0
0
–10
LOGIC THRESHOLD VOLTAGE (V)
VDD = –5V
VSS = +5V
TA = 25°C
–20
–30
–40
–50
dB
2
03273-0-021
IDD (µA)
–40
dB
VSS = 0V
–60
–70
–80
–90
–100
–110
2.5
2.0
1.5
1.0
0.5
100k
1M
10M
FREQUENCY (Hz)
100M
0
Figure 17. Crosstalk vs. Frequency
100
600Ω
IN AND OUT
VDD = +5V
VSS = –5V
TA = 25°C
0.1
0.01
100
200
500
1k
2k
FREQUENCY (Hz)
5k
10k
20k
03273-0-020
THD + N (%)
1
50
2
4
6
VDD (V)
8
Figure 20. Logic Threshold Voltage vs. Supply Voltage
10
20
0
Figure 18. THD + Noise
Rev. A | Page 15 of 20
03273-0-022
03273-0-019
–120
–130
ADG658/ADG659
TEST CIRCUITS
IDS
V1
VDD
VSS
VDD
VSS
S1
D
S2
A
VO
S8
EN
VS
GND
03273-0-023
VS
RON = V1/I DS
03273-0-025
D
S
ID (OFF)
LOGIC 1
Figure 23. Test Circuit 3. ID (OFF)
Figure 21. Test Circuit 1. ON Resistance
VDD
VSS
VDD
VSS
VDD
VSS
VDD
VSS
S1
A
S1
ID (ON)
A
VD
EN
VS
D
S2
VS
D
S8
03273-0-026
IS (OFF)
GND
LOGIC 1
EN
VD
GND
03273-0-024
S8
Figure 24. Test Circuit 4. ID (ON)
Figure 22. Test Circuit 2. IS (OFF)
50Ω
VSS
VDD
A2
VSS
3V
S1
ADDRESS
DRIVE (VIN)
VS1
A1
ADG658*
VS8
S8
VS1
GND
90%
VOUT
D
EN
50%
0V
S2–S7
A0
50%
RL
300Ω
CL
35pF
VOUT
90%
VS8
* SIMILAR CONNECTION FOR ADG659
tTRANSITION
Figure 25. Test Circuit 5. Switching Time of Multiplexer, tTRANSITION
Rev. A | Page 16 of 20
tTRANSITION
03273-0-027
VIN
VDD
ADG658/ADG659
VSS
VDD
A2
VSS
3V
ADDRESS
DRIVE (VIN)
VS
S1
A1
50Ω
0V
S2–S7
A0
S8
ADG658*
VOUT
D
EN
RL
300Ω
GND
CL
35pF
80%
VOUT
80%
03273-0-028
VIN
VDD
tBBM
* SIMILAR CONNECTION FOR ADG659
Figure 26. Test Circuit 6. Break-Before-Make Delay, tBBM
VDD
VSS
VDD
VSS
3V
A2
S1
ENABLE
DRIVE (VIN)
VS
A1
S2–S8
tOFF (EN)
ADG658*
VO
VOUT
RL
300Ω
GND
CL
35pF
0.9VO
0.9VO
OUTPUT
03273-0-029
D
EN
50Ω
50%
0V
A0
VIN
50%
0V
tON (EN)
* SIMILAR CONNECTION FOR ADG659
Figure 27. Test Circuit 7. Enable Delay, tON (EN), tOFF (EN)
VDD
A2 VDD
VSS
VSS
3V
A1
LOGIC INPUT
(VIN)
A0 ADG658*
S
VS
D
EN
VIN
VOUT
0V
CL
1nF
GND
VOUT
* SIMILAR CONNECTION FOR ADG659
Figure 28. Test Circuit 8. Charge Injection
Rev. A | Page 17 of 20
QINJ = CL × ∆VOUT
∆VOUT
03273-0-030
RS
ADG658/ADG659
VDD
0.1µF
0.1µ F
0.1µ F
VDD
NETWORK
ANALYZER
VSS
A2
A1
A1
50Ω
A0
0.1µF
VDD
A2
50Ω
S
VSS
VSS
50Ω
S
A0
VS
VS
D
D
VOUT
EN
GND
OFF ISOLATION = 20 LOG
VOUT
VS
INSERTION LOSS = 20 LOG
VSS
0.1µ F
A1
0.1µ F
VDD
VSS
A0
VS
VOUT WITH SWITCH
VOUT WITHOUT SWITCH
Figure 30. Test Circuit 10. Bandwidth
VDD
50Ω
RL
50Ω
GND
Figure 29. Test Circuit 9. Off Isolation
NETWORK
ANALYZER
VOUT
EN
RL
50Ω
03273-0-031
LOGIC 1
EN
ADG659
50Ω
DA
S1A
S1B
DB
DA
NETWORK
ANALYZER
DB
RL
50Ω
VOUT
GND
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG
Figure 31. Test Circuit 11. Channel-to-Channel Crosstalk
Rev. A | Page 18 of 20
VOUT
VS
03273-0-032
VSS
03273-0-033
VDD
ADG658/ADG659
OUTLINE DIMENSIONS
5.10
5.00
4.90
16
9
4.50
4.40
4.30
6.40
BSC
1
8
PIN 1
1.20
MAX
0.15
0.05
0.20
0.09
0.30
0.19
0.65
BSC
COPLANARITY
0.10
0.75
0.60
0.45
8°
0°
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MO-153AB
Figure 32. 16-Lead Thin Shrink Small Outline Package [TSSOP]
( RU-16)
Dimensions shown in millimeters
4.0
BSC SQ
0.60 MAX
0.65 BSC
PIN 1
INDICATOR
TOP
VIEW
1.00
0.85
0.80
13
12
16
1
EXPOSED
PAD
3.75
BSC SQ
0.75
0.60
0.50
12° MAX
PIN 1
INDICATOR
0.60 MAX
(BOTTOM VIEW)
4
9
8
5
0.25 MIN
1.95 BSC
0.80 MAX
0.65 TYP
0.05 MAX
0.02 NOM
SEATING
PLANE
0.35
0.28
0.25
2.25
2.10 SQ
1.95
0.20 REF
COPLANARITY
0.08
COMPLIANT TO JEDEC STANDARDS MO-220-VGGC
Figure 33. 16-Lead Lead Frame Chip Scale Package [LFCSP]
(CP-16-4)
Dimensions shown in millimeters
Rev. A | Page 19 of 20
ADG658/ADG659
0.193
BSC
9
16
0.154
BSC
1
0.236
BSC
8
PIN 1
0.069
0.053
0.065
0.049
0.010
0.025
0.004
BSC
COPLANARITY
0.004
0.012
0.008
SEATING
PLANE
0.010
0.006
8°
0°
0.050
0.016
COMPLIANT TO JEDEC STANDARDS MO-137AB
Figure 34. 16-Lead Shrink Small Outline Package [QSOP]
(RQ-16)
Dimensions shown in millimeters
ORDERING GUIDE
Model
ADG658YRU
ADG658YRU-REEL7
ADG658YCP
ADG658YCP-REEL7
ADG658YRQ
ADG658YRQ-REEL
ADG658YRQ-REEL7
ADG659YRU
ADG659YRU-REEL7
ADG659YCP
ADG659YCP-REEL7
ADG659YCPZ1
ADG659YCPZ-REEL71
ADG659YRQ
ADG659YRQ-REEL
ADG659YRQ-REEL7
1
Temperature Range
−40°C to +125°C
−40°C to +125°C
−40°C to +85°C
−40°C to +85°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
Package Description
Thin Shrink Small Outline Package (TSSOP)
Thin Shrink Small Outline Package (TSSOP)
Lead Frame Chip Scale Package (LFCSP)
Lead Frame Chip Scale Package (LFCSP)
Shrink Small Outline Package (QSOP)
Shrink Small Outline Package (QSOP)
Shrink Small Outline Package (QSOP)
Thin Shrink Small Outline Package (TSSOP)
Thin Shrink Small Outline Package (TSSOP)
Lead Frame Chip Scale Package (LFCSP)
Lead Frame Chip Scale Package (LFCSP)
Lead Frame Chip Scale Package (LFCSP)
Lead Frame Chip Scale Package (LFCSP)
Shrink Small Outline Package (QSOP)
Shrink Small Outline Package (QSOP)
Shrink Small Outline Package (QSOP)
Z = Pb-free part.
© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
C03273-0-7/04(A)
Rev. A | Page 20 of 20
Package Option
RU-16
RU-16
CP-16
CP-16
RQ-16
RQ-16
RQ-16
RU-16
RU-16
CP-16
CP-16
CP-16
CP-16
RQ-16
RQ-16
RQ-16