Cree® UltraThin™ Gen III LEDs Data Sheet CxxxUT190-Sxxxx-31 Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner form factors are required. FEATURES APPLICATIONS • Small Chip – 190 x 190 x 50 μm • Mobile Phone Keypads • UT LED Performance • Audio Product Display Lighting – 450 & 460 nm – 12 mW min. • Mobile Appliance Keypads – 470 nm – 10 mW min. • Automotive Applications – 527 nm – 3.0 mW min. • Low Forward Voltage – 2.9 V Typical at 5 mA • Single Wire Bond Structure • Class 2 ESD Rating CxxxUT190-Sxxxx-31 Chip Diagram A CPR3EP Rev Data Sheet: Top View Die Cross Section Junction 160 x 160 μm Anode (+) 85-μm Diameter Bottom View 190 x 190 μm Bottom Surface 150 x 150 μm Cathode (-) 80 x 80 μm t = 50 μm Subject to change without notice. www.cree.com 1 Maximum Ratings at TA = 25°C Notes 1&3 CxxxUT190-Sxxxx-31 DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 100 mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range Electrostatic Discharge Threshold (HBM) -40°C to +100°C 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 5 mA Part Number Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5 V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450UT190-Sxxxx-31 2.7 2.9 3.1 2 21 C460UT190-Sxxxx-31 2.7 2.9 3.1 2 21 C470UT190-Sxxxx-31 2.7 2.9 3.1 2 22 C527UT190-Sxxxx-31 2.7 3.0 3.2 2 35 Mechanical Specifications Description CxxxUT190-Sxxxx-31 Dimension Tolerance P-N Junction Area (μm) 160 x 160 ± 25 Chip Top Area (μm) 190 x 190 ± 25 Chip Bottom Area (μm) 150 x 150 ± 25 Chip Thickness (μm) 50 ± 10 Au Bond Pad Diameter (μm) 85 -10/+15 1.2 ± 0.5 80 x 80 ± 25 Au Bond Pad Thickness (μm) Backside Contact Metal Area (μm) Notes: 1. 2. 3. 4. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance E. Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific application. Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. 2 CPR3EP Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxUT190-Sxxxx-31 LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CxxxUT190-Sxxxx-31) orders may be filled with any or all bins (CxxxUT190-xxxx-31) contained in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are measured at If = 5 mA. Radiant Flux C450UT190-S1200-31 C450UT190-0317-31 C450UT190-0318-31 C450UT190-0319-31 C450UT190-0320-31 C450UT190-0313-31 C450UT190-0314-31 C450UT190-0315-31 C450UT190-0316-31 C450UT190-0309-31 C450UT190-0310-31 C450UT190-0311-31 C450UT190-0312-31 C450UT190-0305-31 C450UT190-0306-31 C450UT190-0307-31 C450UT190-0308-31 18.0 mW 16.0 mW 14.0 mW 12.0 mW 445 nm 447.5 nm 450 nm 452.5 nm 455 nm Dominant Wavelength Radiant Flux C460UT190-S1200-31 C460UT190-0317-31 C460UT190-0318-31 C460UT190-0319-31 C460UT190-0320-31 C460UT190-0313-31 C460UT190-0314-31 C460UT190-0315-31 C460UT190-0316-31 C460UT190-0309-31 C460UT190-0310-31 C460UT190-0311-31 C460UT190-0312-31 C460UT190-0305-31 C460UT190-0306-31 C460UT190-0307-31 C460UT190-0308-31 18.0 mW 16.0 mW 14.0 mW 12.0 mW 455 nm 457.5 nm 460 nm 462.5 nm 465 nm Dominant Wavelength Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. 3 CPR3EP Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxUT190-Sxxxx-31 (continued) LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CxxxUT190-Sxxxx-31) orders may be filled with any or all bins (CxxxUT190-xxxx-31) contained in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are measured at If = 5 mA. Radiant Flux C470UT190-S1000-31 C470UT190-0313-31 C470UT190-0314-31 C470UT190-0315-31 C470UT190-0316-31 C470UT190-0309-31 C470UT190-0310-31 C470UT190-0311-31 C470UT190-0312-31 C470UT190-0305-31 C470UT190-0306-31 C470UT190-0307-31 C470UT190-0308-31 C470UT190-0301-31 C470UT190-0302-31 C470UT190-0303-31 C470UT190-0304-31 16.0 mW 14.0 mW 12.0 mW 10.0 mW 465 nm 467.5 nm 470 nm 472.5 nm 475 nm Dominant Wavelength Radiant Flux C527UT190-S0300-31 C527UT190-0307-31 C527UT190-0308-31 C527UT190-0309-31 C527UT190-0304-31 C527UT190-0305-31 C527UT190-0306-31 C527UT190-0301-31 C527UT190-0302-31 C527UT190-0303-31 7.0 mW 5.0 mW 3.0 mW 520 nm 525 nm 530 nm 535 nm Dominant Wavelength Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. 4 CPR3EP Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Relative Light Intensity 500% Standard Bins for CxxxUT190-Sxxxx-31 400% 300% 200% 100% LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CxxxUT190-Sxxxx-31) orders may be filled with any or all bins (CxxxUT190-xxxx-31) 0% 20 mA and all dominant wavelength values are contained in the kit. All radiant flux values are measured at If = 0 5 10 15 20 25 30 measured at If = 5 mA. If (mA) Wavelength Shift vs. Forward Current Forward Current vs. Forward Voltage 4 Dominant Wavelength Shift (nm) 30 25 If (mA) 20 15 10 5 0 2 0 -2 -4 -6 -8 -10 -12 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 Vf (V) 15 20 25 30 If (mA) Relative Intensity vs. Forward Current Relative Light Intensity 500% 400% 300% 200% 100% 0% 0 5 10 15 20 25 30 25 30 If (mA) Wavelength Shift vs. Forward Current Dominant Wavelength Shift (nm) 4 2 0 -2 -4 -6 -8 -10 -12 0 5 10 15 20 If (mA) Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. 5 CPR3EP Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the UltraThin Chip LED product. Actual patterns will vary slightly for each chip. Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. 6 CPR3EP Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com