Data Sheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH General Description Features The AH920 is a Hall-effect latch designed in mixed signal CMOS technology. It is quite suitable for use in automotive, industrial and consumer applications. • • • • • • • Superior high-temperature performance is made possible through dynamic offset cancellation, which reduces the residual offset voltage normally caused by device over-molding, temperature dependencies, and thermal stress. The device integrates a voltage regulator, Hall-voltage generator, small-signal amplifier, chopper stabilization, schmitt trigger, and open-drain output. AH920 Wide Operating Voltage Range from 3.5 to 20V Symmetrical Switch Points Chopper-stabilized Amplifier Stage Superior Temperature Stability Open-drain Output Compact Size ESD Rating: 6000V (Human Body Model) Applications • • • • • • An on-board regulator permits operation with supply voltage from 3.5V to 20V. The AH920 is available in TO-92S-3 and SOT-23-3 packages, which are optimized for most applications. TO-92S-3 Brushless DC Motor Commutation Brushless DC Fan Solid-state Switch Revolution Counting Speed Detection High Sensitivity and Unconnected Switch SOT-23-3 Figure 1. Package Types of AH920 Nov. 2010 Rev. 1.3 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH AH920 Pin Configuration Z3 Package (TO-92S-3) N Package (SOT-23-3) 3 3 2 1 2 1 (Front View) (Top View) Figure 2. Pin Configuration of AH920 Pin Description Pin Number TO-92S-3 SOT-23-3 Pin Name Function 1 1 VCC Supply voltage 2 3 GND Ground pin 3 2 OUT Output Pin Nov. 2010 Rev. 1.3 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH AH920 Functional Block Diagram Figure 3. Functional Block Diagram of AH920 Ordering Information AH920W5 23 - Circuit Type G1: Green Package Z3: TO-92S-3 5 N: SOT-23-3 TR: Tape & Reel Blank: Bulk Package Temperature Range TO-92S-3 -40 to 125°C AH920Z3-G1 920 Bulk SOT-23-3 -40 to 125°C AH920NTR-G1 GS7 Tape & Reel Part Number Marking ID Packing Type BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. Nov. 2010 Rev. 1.3 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH AH920 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Supply Voltage VCC 20 V Supply Current (Fault) ICC 5 mA Output current (Continuous) IOUT 25 mA Power Dissipation Operation Temperature Storage Temperature Maximum Junction Temperature ESD (Human Body Model) PD TO-92S-3 400 SOT-23-3 230 mW TA -50 to 150 ºC TSTG -65 to 150 ºC TJ (Max) 165 ºC ESD 6000 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage VCC 3.5 20 V Operating Ambient Temperature TA -40 125 ºC Nov. 2010 Rev. 1.3 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH AH920 Electrical Characteristics VCC =12V, TA=25°C, unless otherwise specified. Parameter Symbol Min Typ Max Unit 3.5 12 20 V VCC=12V, B<BRP 3.0 5.0 mA VCC=12V, B>BOP 3.0 5.0 mA VSAT IOUT=20mA, B>BOP 185 500 mV ILEAKAGE VOUT=20V, B<BRP 0.1 10 µA Output Rising Time tRISING RL=1kΩ,CL=20pF 0.4 2 µs Output Falling Time tFALLING RL=1kΩ,CL=20pF 0.4 2 µs Supply Voltage VCC Supply Current ICC Saturation Voltage Output Leakage Current Conditions Operating Magnetic Characteristics VCC =12V, TA=25°C, unless otherwise specified. Parameter Operating Point Releasing Point Hysteresis Symbol Min Typ Max Unit BOP BRP BHYS 5 -40 22 -22 45 40 -5 Gauss Gauss Gauss Figure 4. Magnetic Flux Density of AH920 Nov. 2010 Rev. 1.3 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH AH920 Magnetic Characteristics (Continued) South Pole North Pole Output=Low (For TO-92S-3) Output=High (For TO-92S-3) Figure 5. Output Status vs. Magnetic Pole Package Type TO-92S-3 SOT-23-3 Parameter Test condition Output South Pole North Pole South Pole North Pole B＞BOP B＜BRP B＞BOP B＜BRP Low High High Low Table 1. Output Status vs. Magnetic Pole Nov. 2010 Rev. 1.3 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH AH920 Magnetic Characteristics (Continued) Figure 6. Magnetic Thresholds Note 2: BOP is determined by putting the device under magnetic field swept from BRP (Min) to BOP (Max) until the output is switched on. Note 3: BRP is determined by putting the device under magnetic field swept from BOP (Max) to BRP (Min) until the output is switched off. Test Circuit and Test Conditions Figure 7. Test Circuit of AH920 Nov. 2010 Rev. 1.3 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH AH920 Test Circuit and Test Conditions (Continued) Figure 8. Test Condition of AH920 (Supply Current) Note 4: Output initial status is low when powering on. Note 5: The supply current ICC represents the average supply current. The output is open during measurement. Note 6: The device is put under the magnetic field: B<BRP. Figure 9. Test Condition of AH920 (Output Saturation Voltage) Note 7: The output saturation voltage VSAT is measured at VCC=3.5V and VCC=20V. Note 8: The device is put under the magnetic field: B>BOP. Nov. 2010 Rev. 1.3 BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH AH920 Test Circuit and Test Conditions (Continued) Figure 10. Test Condition of AH920 (Output Leakage Current) Note 9: The device is put under the magnetic field: B<BRP. Typical Performance Characteristics 4.0 4.0 VCC=5V 3.5 VCC=12V 3.5 3.0 ICC (mA) ICC (mA) 3.0 2.5 2.0 2.0 1.5 1.5 O 1.0 TA=25 C 4 6 8 10 12 14 16 18 -25 20 0 25 50 75 100 125 O VCC (V) TA ( C) Figure 11. ICC vs. VCC Nov. 2010 2.5 Figure 12. ICC vs. TA Rev. 1.3 BCD Semiconductor Manufacturing Limited 9 Data Sheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH AH920 Typical Performance Characteristics (Continued) 50 40 40 30 BOP/BRP/BHYS (Gauss) BOP/BRP/BHYS (Gauss) 30 20 BOP 10 BRP 0 BHYS O TA=25 C -10 20 10 BOP 0 BRP BHYS -10 VCC=12V -20 -20 5 10 15 20 -25 0 25 VCC (V) 50 75 100 125 O TA ( C) Figure 13. BOP/BRP/BHYS vs. VCC Figure 14. BOP/BRP/BHYS vs. TA 180 240 160 220 140 200 180 100 VSAT (mV) VSAT (mV) 120 80 60 160 140 40 O 120 TA=25 C 20 VCC=12V VCC=5V VCC=12V 100 0 0 5 10 15 20 25 -25 IOUT (mA) 25 50 75 100 125 O TA ( C) Figure 15. VSAT vs. IOUT Nov. 2010 0 Figure 16. VSAT vs. TA Rev. 1.3 BCD Semiconductor Manufacturing Limited 10 Data Sheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH AH920 Typical Performance Characteristics (Continued) 450 SOT-23-3 TO-92S-3 400 350 PD (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 O TA ( C) Figure 17. PD vs. TA Typical Application Output RL VCC CL 0.1 F Figure 18. Typical Application Circuit of AH920 Nov. 2010 Rev. 1.3 BCD Semiconductor Manufacturing Limited 11 Data Sheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH AH920 Mechanical Dimensions TO-92S-3 Unit: mm(inch) ° ° Nov. 2010 Rev. 1.3 BCD Semiconductor Manufacturing Limited 12 Data Sheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH AH920 Mechanical Dimensions SOT-23-3 Unit: mm(inch) 2.820(0.111) 3.020(0.119) 0.100(0.004) 0.200(0.008) 0.300(0.012) 0.600(0.024) 2.650(0.104) 2.950(0.116) 1.500(0.059) 1.700(0.067) 1.230(0.048) 1.530(0.060) 0.200(0.008) 0.770(0.030) 1.070(0.042) 1.800(0.071) 2.000(0.079) 0 8 0.300(0.012) 0.500(0.020) 1.450(0.057) MAX. 0.950(0.037) TYP ° ° 0.000(0.000) 0.150(0.006) 0.900(0.035) 1.300(0.051) Nov. 2010 Rev. 1.3 BCD Semiconductor Manufacturing Limited 13 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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