PD - 97597A
AUTOMOTIVE GRADE
AUIRFR4105
HEXFET® Power MOSFET
Features
●
●
●
●
●
●
●
●
●
D
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed
up toTjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V(BR)DSS
G
S
55V
RDS(on) max.
ID (Silicon Limited)
45mΩ
27A
ID (Package Limited)
20A
g
D
S
Description
G
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
D-Pak
AUIRFR4105
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
27
19
20
100
68
0.45
± 20
65
16
6.8
5.0
-55 to + 175
c
c
Units
g
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
d
c
e
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
Thermal Resistance
RθJC
RθJA
RθJA
h
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
2.2
50
110
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/05/11
AUIRFR4105
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55
–––
–––
2.0
6.5
–––
–––
–––
–––
–––
0.052
–––
–––
–––
–––
–––
–––
–––
–––
–––
45
4.0
–––
25
250
100
-100
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 16A
V VDS = VGS, ID = 250μA
S VDS = 25V, ID = 16A
μA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
nA VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
49
31
40
4.5
34
6.8
14
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
700
240
100
–––
–––
–––
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
nC
ns
nH
pF
ID = 16A
VDS = 44V
VGS = 10V, See Fig. 6 & 13
VDD = 28V
ID = 16A
RG = 18Ω
RD = 1.8Ω, See Fig. 10
Between lead,
f
f
D
G
S
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
27g
ISM
(Body Diode)
Pulsed Source Current
–––
–––
100
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
57
130
1.6
86
200
c
Conditions
MOSFET symbol
A
V
ns
nC
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 16A, VGS = 0V
TJ = 25°C, IF = 16A
di/dt = 100A/μs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 410μH
RG = 25Ω, IAS = 16A. (See Figure 12)
ISD ≤ 16A, di/dt ≤ 420A/μs, VDD ≤ V(BR)DSS,
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
Rθ is measured at Tj approximately 90°C.
TJ ≤ 175°C.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
www.irf.com
AUIRFR4105
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
ESD
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
D-PAK
MSL1
†††
Machine Model
Class M2 (+/- 200V)
AEC-Q101-002
Human Body Model
Class H1B (+/- 900V)
AEC-Q101-001
Charged Device
Model
Class C5 (+/- 1125V)
AEC-Q101-005
RoHS Compliant
†††
†††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
www.irf.com
3
AUIRFR4105
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
100
10
4.5V
1
20μs PULSE WIDTH
TC = 25°C
0.1
0.1
1
10
A
100
10
100
TJ = 175°C
10
V DS = 25V
20μs PULSE WIDTH
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
7
10
100
A
Fig 2. Typical Output Characteristics
2.4
6
1
VDS , Drain-to-Source Voltage (V)
100
5
20μs PULSE WIDTH
TC = 175°C
0.1
0.1
Fig 1. Typical Output Characteristics
1
4.5V
1
VDS , Drain-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
10
A
I D = 26A
2.0
1.6
1.2
0.8
0.4
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
AUIRFR4105
1200
V GS , Gate-to-Source Voltage (V)
1000
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = Cds + C gd
800
Coss
600
400
Crss
200
0
1
10
100
A
I D = 16A
V DS = 44V
V DS = 28V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
VDS , Drain-to-Source Voltage (V)
20
30
40
A
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
10
100
TJ = 175°C
TJ = 25°C
10
100
10μs
100μs
10
1ms
VGS = 0V
1
0.4
0.8
1.2
1.6
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
A
2.0
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10
A
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFR4105
RD
V DS
30
VGS
LIMITED BY PACKAGE
25
D.U.T.
RG
+
ID , Drain Current (A)
-VDD
20
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
10
Fig 10a. Switching Time Test Circuit
5
VDS
0
25
50
75
100
125
150
90%
175
TC , Case Temperature ( °C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
15V
L
VDS
D.U.T
RG
IAS
10V
tp
DRIVER
+
V
- DD
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
E AS , Single Pulse Avalanche Energy (mJ)
AUIRFR4105
140
TOP
120
BOTTOM
ID
6.5A
11A
16A
100
80
60
40
20
0
VDD = 25V
25
50
75
100
125
150
A
175
Starting TJ , Junction Temperature (°C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
5.0 V
QG
QGS
.2μF
.3μF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
www.irf.com
12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
AUIRFR4105
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
+
-
-
+
+
•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
Period
P.W.
D=
VDD
P.W.
Period
*
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
8
www.irf.com
AUIRFR4105
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AUFR4105
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
AUIRFR4105
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
10
www.irf.com
AUIRFR4105
Ordering Information
Base part
number
Package Type
AUIRFR4105
Dpak
www.irf.com
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
Complete Part
Number
AUIRFR4105
AUIRFR4105TR
AUIRFR4105TRL
AUIRFR4105TRR
11
AUIRFR4105
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and
services at any time and to discontinue any product or services without notice. Part numbers designated with the AU
prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and
process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information
with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation.
Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product
or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of
the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products
for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the
product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are
designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyers own risk and that they are solely responsible for
compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications,
IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
www.irf.com