polyfet rf devices F1002 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 40 Watts Single Ended Package Style AA TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 80 Watts Junction to Case Thermal Resistance Maximum Junction Temperature 1.95 o C/W 200 o C Storage Temperature DC Drain Current -65 o C to 150o C 4 A RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficiency VSWR MIN TYP Drain to Source Voltage Gate to Source Voltage 70 V 30V 70 V 40WATTS OUTPUT ) MAX 15 60 Load Mismatch Toleranc Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.4 A, Vds = 28.0 V, F = 175 MHz % Idq = 0.4 A, Vds = 28.0 V, F = 175 MHz Relative Idq = 0.4 A, Vds = 28.0 V, F = 175 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX 65 UNITS V TEST CONDITIONS Bvdss Drain Breakdown Voltag Idss Zero Bias Drain Curren 2 Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc 1.6 Mho Vds = 10V, Vgs = 5V Rdson Saturation Resistanc 0.7 Ohm Vgs = 20V, Ids = 8 A Idsat Saturation Curren 11 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitanc 66 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitanc 8 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitanc 40 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz 1 0.1 A, Vgs = 0V mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.2 A, Vgs = Vds POLYFET RF DEVICES Ids = REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1002 POUT VS PIN GRAPH F1002 POUT vs PIN CAPACITANCE VS VOLTAGE Idq= 0.4A F=175 Mhz VDS = 28V F1B 2 DICE CAPACITANCE 60 18 1000 17 50 16 40 15 100 Coss Ciss 14 30 13 20 12 EFFICIENCY = 75% 10 Crss 10 11 10 0 0 0.5 1 1.5 2 2.5 3 3.5 1 PIN IN WATTS 0 POUT 5 10 GAIN 15 20 25 30 VDS IN VOLTS IV CURVE ID AND GM VS VGS F1B 2 DICE IV CURVE F1B 2 DIE GM & ID vs VGS 12 100 10 8 Id 10 6 4 1 2 Gm 0 0 2 4 6 8 10 12 14 16 18 20 0.1 Vds in Volts 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V S11 AND S22 SMITH CHART Vg = 10V 2 Vg = 12V 4 6 8 10 12 14 Vgs in Volts PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com