APT6029BFLL APT6029SFLL 600V 21A 0.290Ω POWER MOS 7 R FREDFET BFLL D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg SFLL • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol TO-247 D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT6029BFLL_SFLL UNIT Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25°C 21 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 300 Watts Linear Derating Factor 2.40 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 84 -55 to 150 °C 300 Amps 21 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 10.5A) TYP MAX UNIT Volts 0.290 Ohms Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 9-2004 Characteristic / Test Conditions 050-7133 Rev C Symbol APT6029BFLL_SFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr 3 RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 21A @ 25°C RG = 1.6Ω 4 INDUCTIVE SWITCHING @ 25°C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 225 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy VDD = 400V, VGS = 15V nC ns 90 ID = 21A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C µJ 360 VDD = 400V, VGS = 15V ID = 21A, RG = 5Ω UNIT pF 47 65 13 36 9 5 23 VDD = 300V Fall Time MAX 2615 420 ID = 21A @ 25°C Turn-off Delay Time tf TYP VGS = 10V Rise Time td(off) MIN Test Conditions 110 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM Characteristic / Test Conditions MIN TYP MAX 21 Continuous Source Current (Body Diode) UNIT Amps Pulsed Source Current 1 (Body Diode) 84 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -21A) 1.3 Volts dv/ Peak Diode Recovery 15 V/ns dt dv/ 5 dt t rr Reverse Recovery Time (IS = -21A, di/dt = 100A/µs) Tj = 25°C 250 Tj = 125°C 515 Q rr Reverse Recovery Charge (IS = -21A, di/dt = 100A/µs) Tj = 25°C 1.78 Tj = 125°C 5.17 IRRM Peak Recovery Current (IS = -21A, di/dt = 100A/µs) Tj = 25°C 11.9 Tj = 125°C 18.5 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 MIN TYP MAX 0.22 40 0.9 0.35 0.7 0.25 0.5 0.20 0.15 0.3 0.10 0.1 0.05 0 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7133 Rev C 9-2004 0.45 0.30 t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 10-5 °C/W 4 Starting Tj = +25°C, L = 5.49mH, RG = 25Ω, Peak IL = 21A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID21A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.40 UNIT SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT6029BFLL_SFLL 60 RC MODEL Junction temp. (°C) 0.161 0.00994F Power (watts) 0.259 0.236F ID, DRAIN CURRENT (AMPERES) VGS =15 &10V 50 8V 7V 40 30 6.5 20 6V 10 5.5V Case temperature. (°C) 5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 80 VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 50 40 30 TJ = +125°C 20 TJ = +25°C 10 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 I D V NORMALIZED TO = 10V @ I = 10.5A GS D 1.20 VGS=10V 1.10 VGS=20V 1.00 0.90 0.80 0 10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 10.5A GS = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, RDS(ON) vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 1.30 1.15 25 0.0 -50 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 9-2004 0 TJ = -55°C 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 050-7133 Rev C ID, DRAIN CURRENT (AMPERES) 70 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 10 1mS TC =+25°C TJ =+150°C SINGLE PULSE 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 I VDS=100V 12 VDS=250V VDS=400V 8 4 0 10 20 30 40 50 60 70 80 90 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 1,000 Coss 100 Crss 10mS = 21A D C, CAPACITANCE (pF) 100µS 1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Ciss 10 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 50 0 APT6029BFLL_SFLL 10,000 84 50 200 100 TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 50 td(off) 40 V 30 DD R G = 400V tr and tf (ns) td(on) and td(off) (ns) 40 = 5Ω T = 125°C J L = 100µH 20 G = 400V = 5Ω tr T = 125°C 10 td(on) 0 5 0 10 15 20 25 30 35 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 15 20 25 30 35 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 700 DD R 600 G = 400V 5 V 700 = 5Ω I J L = 100µH Eon E ON includes diode reverse recovery. 400 300 200 Eoff 100 SWITCHING ENERGY (µJ) T = 125°C 500 0 0 10 800 V SWITCHING ENERGY (µJ) DD R J 0 9-2004 V 20 L = 100µH 10 050-7133 Rev C tf 30 DD D = 400V = 21A Eoff T = 125°C J 600 L = 100µH E ON includes 500 diode reverse recovery. Eon 400 300 200 100 0 5 10 15 20 25 30 35 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT6029BFLL_SFLL Gate Voltage 10 % 90% TJ = 125 C td(on) Gate Voltage T = 125 C J t d(off) tr Drain Voltage Drain Current 90% 90% tf 5% 5% 10% Drain Current Drain Voltage 10 % Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT15DF60 ID V DD V DS G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 Drain 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Gate Drain Source 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Source Drain Gate Dimensions in Millimeters (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 9-2004 4.50 (.177) Max. 050-7133 Rev C 0.46 (.018) 0.56 (.022) {3 Plcs} 2.87 (.113) 3.12 (.123)