CY14B104LA, CY14B104NA 4-Mbit (512 K × 8/256 K × 16) nvSRAM 4-Mbit (512 K × 8/256 K × 16) nvSRAM Features ■ Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS) compliant ■ 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512 K × 8 (CY14B104LA) or 256 K × 16 (CY14B104NA) ■ ■ Hands off automatic STORE on power-down with only a small capacitor Functional Description ■ STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down ■ RECALL to SRAM initiated by software or power-up ■ Infinite read, write, and recall cycles ■ 1 million STORE cycles to QuantumTrap ■ 20 year data retention ■ Single 3 V +20, –10 operation ■ Industrial temperature The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512 K bytes of 8 bits each or 256 K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control. Logic Block Diagram [1, 2, 3] A0 A1 A2 A3 A4 A5 A6 A7 A8 A17 A18 VCC Quatrum Trap 2048 X 2048 R O W VCAP POWER CONTROL STORE RECALL D E C O D E R STORE/RECALL CONTROL STATIC RAM ARRAY 2048 X 2048 SOFTWARE DETECT HSB A14 - A2 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 I N P U T B U F F E R S COLUMN I/O OE COLUMN DEC WE DQ12 DQ13 CE DQ14 BLE A9 A10 A11 A12 A13 A14 A15 A16 DQ15 BHE Notes 1. Address A0–A18 for × 8 configuration and Address A0–A17 for × 16 configuration. 2. Data DQ0–DQ7 for × 8 configuration and Data DQ0–DQ15 for × 16 configuration. 3. BHE and BLE are applicable for × 16 configuration only. Cypress Semiconductor Corporation Document Number: 001-49918 Rev. *L • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised June 13, 2012 CY14B104LA, CY14B104NA Contents Pinouts .............................................................................. 3 Pin Definitions .................................................................. 4 Device Operation .............................................................. 5 SRAM Read ................................................................ 5 SRAM Write ................................................................. 5 AutoStore Operation .................................................... 5 Hardware STORE Operation ....................................... 5 Hardware RECALL (Power-Up) .................................. 6 Software STORE ......................................................... 6 Software RECALL ....................................................... 6 Preventing AutoStore .................................................. 7 Data Protection ............................................................ 7 Maximum Ratings ............................................................. 8 Operating Range ............................................................... 8 DC Electrical Characteristics .......................................... 8 Data Retention and Endurance ....................................... 9 Capacitance ...................................................................... 9 Thermal Resistance .......................................................... 9 AC Test Loads ................................................................ 10 AC Test Conditions ........................................................ 10 AC Switching Characteristics ....................................... 11 Document Number: 001-49918 Rev. *L Switching Waveforms .................................................... 11 AutoStore/Power-Up RECALL ....................................... 14 Switching Waveforms – AutoStore/Power-up RECALL ....................................... 14 Software Controlled STORE/RECALL Cycle ................ 15 Switching Waveforms – Software Controlled STORE/RECALL Cycle ................ 15 Hardware STORE Cycle ................................................. 16 Switching Waveforms – Hardware STORE Cycle ........ 16 Truth Table For SRAM Operations ................................ 17 Ordering Information ...................................................... 18 Ordering Code Definitions ......................................... 19 Package Diagrams .......................................................... 20 Acronyms ........................................................................ 23 Document Conventions ................................................. 23 Units of Measure ....................................................... 23 Document History Page ................................................. 24 Sales, Solutions, and Legal Information ...................... 26 Worldwide Sales and Design Support ....................... 26 Products .................................................................... 26 PSoC Solutions ......................................................... 26 Page 2 of 26 CY14B104LA, CY14B104NA Pinouts Figure 1. 48-ball FBGA pinouts 48-ball FBGA 48-ball FBGA (× 8) Top View (not to scale) (× 16) Top View (not to scale) 1 2 3 4 5 6 A BLE OE A0 A1 A2 NC A NC B DQ8 BHE A3 A4 CE DQ0 B NC DQ4 C DQ9 DQ10 A5 A6 DQ1 DQ2 C A7 DQ5 VCC D VSS A17 A7 DQ3 VCC D 2 3 4 5 6 NC OE A0 A1 A2 NC NC NC A3 A4 CE DQ0 NC A5 A6 VSS DQ1 A17 1 DQ11 VCC DQ2 VCAP A16 DQ6 VSS E VCC DQ12 VCAP A16 DQ4 VSS E DQ3 NC A14 A15 NC DQ7 F DQ14 DQ13 A14 A15 DQ5 DQ6 F NC HSB A12 A13 WE NC G DQ15 HSB A12 A13 WE DQ7 G A18 A8 A9 A10 A11 H NC A9 A10 A11 NC H 44 43 42 41 40 39 38 37 36 35 34 33 32 31 A17 A16 A15 OE BHE NC [4] [4] A8 Figure 2. 44-pin TSOP II pinouts (× 8) NC [5] NC A0 A1 A2 A3 A4 CE DQ0 DQ1 VCC VSS DQ2 DQ3 WE A5 A6 A7 A8 A9 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44-pin TSOP II (× 8) Top View (not to scale) (× 16) 44 43 42 41 40 39 38 37 36 35 34 33 32 31 HSB NC [4] NC A18 A17 A16 A15 OE DQ7 DQ6 VSS VCC DQ5 DQ4 30 29 28 27 26 25 24 23 VCAP A14 A13 A12 A11 A10 NC NC A0 A1 A2 A3 A4 CE DQ0 DQ1 DQ2 DQ3 VCC VSS DQ4 DQ5 DQ6 DQ7 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 [6] 44-pin TSOP II (× 16) Top View (not to scale) 30 29 28 27 26 25 24 23 BLE DQ15 DQ14 DQ13 DQ12 VSS VCC DQ11 DQ10 DQ9 DQ8 VCAP A14 A13 A12 A11 A10 Notes 4. Address expansion for 8-Mbit. NC pin not connected to die. 5. Address expansion for 16-Mbit. NC pin not connected to die. 6. HSB pin is not available in 44-pin TSOP II (× 16) package. Document Number: 001-49918 Rev. *L Page 3 of 26 CY14B104LA, CY14B104NA Pinouts (continued) Figure 3. Pin Diagram – 54-pin TSOP II pinout NC [7] NC A0 A1 A2 A3 A4 CE DQ0 DQ1 DQ2 DQ3 VCC VSS DQ4 DQ5 DQ6 DQ7 WE A5 A6 A7 A8 A9 NC NC NC 54 1 53 2 52 3 51 4 50 5 49 6 48 7 47 8 46 9 45 10 54-pin TSOP II 44 11 (× 16) 43 12 42 13 Top View 41 14 (not to scale) 40 15 39 16 38 17 37 18 36 19 35 20 34 21 33 22 32 23 31 24 30 25 29 26 27 28 HSB NC [8] A17 A16 A15 OE BHE BLE DQ15 DQ14 DQ13 DQ12 VSS VCC DQ11 DQ10 DQ9 DQ8 VCAP A14 A13 A12 A11 A10 NC NC NC Pin Definitions Pin Name I/O Type Description A0–A18 Input Address inputs. Used to select one of the 524,288 bytes of the nvSRAM for × 8 Configuration. Address inputs. Used to Select one of the 262,144 words of the nvSRAM for × 16 Configuration. A0–A17 DQ0–DQ7 Input/Output Bidirectional data I/O lines for × 8 configuration. Used as input or output lines depending on operation. DQ0–DQ15 Bidirectional data I/O lines for × 16 configuration. Used as input or output lines depending on operation. WE Input Write Enable input, Active LOW. When selected LOW, data on the I/O pins is written to the specific address location. Input Chip Enable input, Active LOW. When LOW, selects the chip. When HIGH, deselects the chip. CE Input Output Enable, Active LOW. The active LOW OE input enables the data output buffers during read OE cycles. I/O pins are tristated on deasserting OE HIGH. Input Byte High Enable, Active LOW. Controls DQ15–DQ8. BHE Input Byte Low Enable, Active LOW. Controls DQ7–DQ0. BLE VSS Ground Ground for the device. Must be connected to the ground of the system. Power supply Power supply inputs to the device. VCC [9] Input/Output Hardware STORE Busy (HSB). When LOW this output indicates that a Hardware STORE is in progress. HSB When pulled LOW external to the chip it initiates a non-volatile STORE operation. After each Hardware and Software STORE operation, HSB is driven HIGH for a short time (tHHHD) with standard output high current, and then a weak internal pull-up resistor keeps this pin HIGH (external pull-up resistor connection optional). Power supply AutoStore Capacitor. Supplies power to the nvSRAM during power loss to store data from SRAM to VCAP non-volatile elements. NC No connect No Connect. This pin is not connected to the die. Notes 7. Address expansion for 16-Mbit. NC pin not connected to die. 8. Address expansion for 8-Mbit. NC pin not connected to die. 9. HSB pin is not available in 44-pin TSOP II (× 16) package. Document Number: 001-49918 Rev. *L Page 4 of 26 CY14B104LA, CY14B104NA The CY14B104LA/CY14B104NA nvSRAM is made up of two functional components paired in the same physical cell. They are a SRAM memory cell and a non-volatile QuantumTrap cell. The SRAM memory cell operates as a standard fast static RAM. Data in the SRAM is transferred to the non-volatile cell (the STORE operation), or from the non-volatile cell to the SRAM (the RECALL operation). Using this unique architecture, all cells are stored and recalled in parallel. During the STORE and RECALL operations, SRAM read and write operations are inhibited. The CY14B104LA/CY14B104NA supports infinite reads and writes similar to a typical SRAM. In addition, it provides infinite RECALL operations from the non-volatile cells and up to 1 million STORE operations. Refer to the Truth Table For SRAM Operations on page 17 for a complete description of read and write modes. SRAM Read The CY14B104LA/CY14B104NA performs a read cycle when CE and OE are LOW and WE and HSB are HIGH. The address specified on pins A0–18 or A0–17 determines which of the 524,288 data bytes or 262,144 words of 16 bits each are accessed. Byte enables (BHE, BLE) determine which bytes are enabled to the output, in the case of 16-bit words. When the read is initiated by an address transition, the outputs are valid after a delay of tAA (read cycle 1). If the read is initiated by CE or OE, the outputs are valid at tACE or at tDOE, whichever is later (read cycle 2). The data output repeatedly responds to address changes within the tAA access time without the need for transitions on any control input pins. This remains valid until another address change or until CE or OE is brought HIGH, or WE or HSB is brought LOW. SRAM Write A write cycle is performed when CE and WE are LOW and HSB is HIGH. The address inputs must be stable before entering the write cycle and must remain stable until CE or WE goes HIGH at the end of the cycle. The data on the common I/O pins DQ0–15 are written into the memory if the data is valid (tSD time) before the end of a WE controlled write or before the end of an CE controlled write. The Byte Enable inputs (BHE, BLE) determine which bytes are written, in the case of 16-bit words. It is recommended that OE be kept HIGH during the entire write cycle to avoid data bus contention on common I/O lines. If OE is left LOW, internal circuitry turns off the output buffers tHZWE after WE goes LOW. AutoStore Operation The CY14B104LA/CY14B104NA stores data to the nvSRAM using one of the following three storage operations: Hardware STORE activated by the HSB; Software STORE activated by an address sequence; AutoStore on device power-down. The AutoStore operation is a unique feature of QuantumTrap technology and is enabled by default on the CY14B104LA/CY14B104NA. During a normal operation, the device draws current from VCC to charge a capacitor connected to the VCAP pin. This stored charge is used by the chip to perform a single STORE operation. If the voltage on the VCC pin drops below VSWITCH, the part automatically disconnects the VCAP pin from VCC. A STORE operation is initiated with power provided by the VCAP capacitor. Note If the capacitor is not connected to VCAP pin, AutoStore must be disabled using the soft sequence specified in Preventing AutoStore on page 7. In case AutoStore is enabled without a capacitor on VCAP pin, the device attempts an AutoStore operation without sufficient charge to complete the Store. This corrupts the data stored in nvSRAM. Figure 4 shows the proper connection of the storage capacitor (VCAP) for automatic store operation. Refer to DC Electrical Characteristics on page 8 for the size of VCAP. The voltage on the VCAP pin is driven to VCC by a regulator on the chip. A pull-up should be placed on WE to hold it inactive during power-up. This pull-up is effective only if the WE signal is tristate during power-up. Many MPUs tristate their controls on power-up. This should be verified when using the pull-up. When the nvSRAM comes out of power-on-RECALL, the MPU must be active or the WE held inactive until the MPU comes out of reset. To reduce unnecessary non-volatile stores, AutoStore and hardware STORE operations are ignored unless at least one write operation has taken place since the most recent STORE or RECALL cycle. Software initiated STORE cycles are performed regardless of whether a write operation has taken place. The HSB signal is monitored by the system to detect if an AutoStore cycle is in progress. Figure 4. AutoStore Mode VCC 0.1 uF 10 kOhm Device Operation VCC WE VCAP VSS VCAP Hardware STORE Operation The CY14B104LA/CY14B104NA provides the HSB[10] pin to control and acknowledge the STORE operations. The HSB pin is used to request a hardware STORE cycle. When the HSB pin is driven LOW, the CY14B104LA/CY14B104NA conditionally initiates a STORE operation after tDELAY. An actual STORE cycle only begins if a write to the SRAM has taken place since the last STORE or RECALL cycle. The HSB pin also acts as an open drain driver (internal 100 k weak pull-up resistor) that is internally driven LOW to indicate a busy condition when the STORE (initiated by any means) is in progress. Note After each Hardware and Software STORE operation HSB is driven HIGH for a short time (tHHHD) with standard output high current and then remains HIGH by internal 100 k pull-up resistor. Note 10. HSB pin is not available in 44-pin TSOP II (× 16) package. Document Number: 001-49918 Rev. *L Page 5 of 26 CY14B104LA, CY14B104NA SRAM write operations that are in progress when HSB is driven LOW by any means are given time (tDELAY) to complete before the STORE operation is initiated. However, any SRAM write cycles requested after HSB goes LOW are inhibited until HSB returns HIGH. In case the write latch is not set, HSB is not driven LOW by the CY14B104LA/CY14B104NA. But any SRAM read and write cycles are inhibited until HSB is returned HIGH by MPU or other external source. During any STORE operation, regardless of how it is initiated, the CY14B104LA/CY14B104NA continues to drive the HSB pin LOW, releasing it only when the STORE is complete. Upon completion of the STORE operation, the nvSRAM memory access is inhibited for tLZHSB time after HSB pin returns HIGH. Leave the HSB unconnected if it is not used. 1. Read address 0x4E38 Valid READ 2. Read address 0xB1C7 Valid READ 3. Read address 0x83E0 Valid READ 4. Read address 0x7C1F Valid READ 5. Read address 0x703F Valid READ 6. Read address 0x8FC0 Initiate STORE cycle The software sequence may be clocked with CE controlled reads or OE controlled reads, with WE kept HIGH for all the six READ sequences. After the sixth address in the sequence is entered, the STORE cycle commences and the chip is disabled. HSB is driven LOW. After the tSTORE cycle time is fulfilled, the SRAM is activated again for the read and write operation. Software RECALL Hardware RECALL (Power-Up) During power-up or after any low power condition (VCC< VSWITCH), an internal RECALL request is latched. When VCC again exceeds the VSWITCH on power up, a RECALL cycle is automatically initiated and takes tHRECALL to complete. During this time, the HSB pin is driven LOW by the HSB driver and all reads and writes to nvSRAM are inhibited. Software STORE Data is transferred from the SRAM to the non-volatile memory by a software address sequence. The CY14B104LA/CY14B104NA software STORE cycle is initiated by executing sequential CE or OE controlled read cycles from six specific address locations in exact order. During the STORE cycle an erase of the previous non-volatile data is first performed, followed by a program of the non-volatile elements. After a STORE cycle is initiated, further input and output are disabled until the cycle is completed. Because a sequence of reads from specific addresses is used for STORE initiation, it is important that no other read or write accesses intervene in the sequence, or the sequence is aborted and no STORE or RECALL takes place. Data is transferred from the non-volatile memory to the SRAM by a software address sequence. A software RECALL cycle is initiated with a sequence of read operations in a manner similar to the software STORE initiation. To initiate the RECALL cycle, perform the following sequence of CE or OE controlled read operations must be performed. 1. Read address 0x4E38 Valid READ 2. Read address 0xB1C7 Valid READ 3. Read address 0x83E0 Valid READ 4. Read address 0x7C1F Valid READ 5. Read address 0x703F Valid READ 6. Read address 0x4C63 Initiate RECALL cycle Internally, RECALL is a two step procedure. First, the SRAM data is cleared; then, the non-volatile information is transferred into the SRAM cells. After the tRECALL cycle time, the SRAM is again ready for read and write operations. The RECALL operation does not alter the data in the non-volatile elements. To initiate the software STORE cycle, the following read sequence must be performed. Table 1. Mode Selection CE WE OE BHE, BLE[11] A15–A0[12] Mode I/O Power H X X X X Not selected Output high Z Standby L H L L X Read SRAM Output data Active L L X L X Write SRAM Input data Active L H L X 0x4E38 0xB1C7 0x83E0 0x7C1F 0x703F 0x8B45 Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM AutoStore Disable Output data Output data Output data Output data Output data Output data Active[13] Notes 11. BHE and BLE are applicable for × 16 configuration only. 12. While there are 19 address lines on the CY14B104LA (18 address lines on the CY14B104NA), only 13 address lines (A14–A2) are used to control software modes. The remaining address lines are don’t care. 13. The six consecutive address locations must be in the order listed. WE must be HIGH during all six cycles to enable a non-volatile cycle. Document Number: 001-49918 Rev. *L Page 6 of 26 CY14B104LA, CY14B104NA Table 1. Mode Selection (continued) CE WE OE BHE, BLE[11] A15–A0[12] Mode I/O Power L H L X 0x4E38 0xB1C7 0x83E0 0x7C1F 0x703F 0x4B46 Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM AutoStore Enable Output data Output data Output data Output data Output data Output data Active[14] L H L X 0x4E38 0xB1C7 0x83E0 0x7C1F 0x703F 0x8FC0 Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Non-volatile STORE Output data Output data Output data Output data Output data Output high Z Active ICC2[14] L H L X 0x4E38 0xB1C7 0x83E0 0x7C1F 0x703F 0x4C63 Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Non-volatile RECALL Output data Output data Output data Output data Output data Output high Z Active[14] Preventing AutoStore The AutoStore function is disabled by initiating an AutoStore disable sequence. A sequence of read operations is performed in a manner similar to the software STORE initiation. To initiate the AutoStore disable sequence, the following sequence of CE or OE controlled read operations must be performed: 1. Read address 0x4E38 Valid READ 2. Read address 0xB1C7 Valid READ 3. Read address 0x83E0 Valid READ 4. Read address 0x7C1F Valid READ 5. Read address 0x703F Valid READ 6. Read address 0x8B45 AutoStore Disable The AutoStore is re-enabled by initiating an AutoStore enable sequence. A sequence of read operations is performed in a manner similar to the software RECALL initiation. To initiate the AutoStore enable sequence, the following sequence of CE or OE controlled read operations must be performed: 1. Read address 0x4E38 Valid READ 2. Read address 0xB1C7 Valid READ 3. Read address 0x83E0 Valid READ 4. Read address 0x7C1F Valid READ 5. Read address 0x703F Valid READ 6. Read address 0x4B46 AutoStore Enable If the AutoStore function is disabled or re-enabled, a manual STORE operation (hardware or software) must be issued to save the AutoStore state through subsequent power-down cycles. The part comes from the factory with AutoStore enabled and 0x00 written in all cells. Data Protection The CY14B104LA/CY14B104NA protects data from corruption during low voltage conditions by inhibiting all externally initiated STORE and write operations. The low voltage condition is detected when VCC < VSWITCH. If the CY14B104LA/CY14B104NA is in a write mode (both CE and WE are LOW) at power-up, after a RECALL or STORE, the write is inhibited until the SRAM is enabled after tLZHSB (HSB to output active). This protects against inadvertent writes during power-up or brown out conditions. Note 14. The six consecutive address locations must be in the order listed. WE must be HIGH during all six cycles to enable a non-volatile cycle. Document Number: 001-49918 Rev. *L Page 7 of 26 CY14B104LA, CY14B104NA Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage temperature ................................–65 C to +150 C Maximum accumulated storage time Transient voltage (< 20 ns) on any pin to ground potential ................. –2.0 V to VCC + 2.0 V Package power dissipation capability (TA = 25 °C) ..................................................1.0 W Surface mount Pb soldering temperature (3 Seconds) .........................................+260 C At 150 C ambient temperature ....................... 1000 h DC output current (1 output at a time, 1s duration) .....15 mA At 85 C ambient temperature ......................20 Years Static discharge voltage (per MIL-STD-883, Method 3015) .......................... > 2001 V Ambient temperature with power applied ...........................................–55 C to +150 C Supply voltage on VCC relative to VSS .......... –0.5 V to 4.1 V Voltage applied to outputs in high Z state ..................................... –0.5 V to VCC + 0.5 V Input voltage ........................................ –0.5 V to Vcc + 0.5 V Latch up current .................................................... > 200 mA Operating Range Range Industrial Ambient Temperature VCC –40 C to +85 C 2.7 V to 3.6 V DC Electrical Characteristics Over the Operating Range Parameter Description VCC Power supply ICC1 Average VCC current ICC2 ICC3 ICC4 ISB IIX[16] IOZ VIH VIL VOH VOL VCAP[17] Average VCC current during STORE Average VCC current at tRC= 200 ns, VCC(Typ), 25 °C Average VCAP current during AutoStore cycle VCC standby current Test Conditions tRC = 20 ns tRC = 25 ns tRC = 45 ns Values obtained without output loads (IOUT = 0 mA) All inputs don’t care, VCC = Max Average current for duration tSTORE All inputs cycling at CMOS levels. Values obtained without output loads (IOUT = 0 mA). All inputs don’t care. Average current for duration tSTORE CE > (VCC – 0.2 V). VIN < 0.2 V or > (VCC – 0.2 V). Standby current level after non-volatile cycle is complete. Inputs are static. f = 0 MHz. VCC = Max, VSS < VIN < VCC Input leakage current (except HSB) Input leakage current (for HSB) VCC = Max, VSS < VIN < VCC Off-state output leakage current VCC = Max, VSS < VOUT < VCC, CE or OE > VIH or BHE/BLE > VIH or WE < VIL Input HIGH voltage Input LOW voltage Output HIGH voltage IOUT = –2 mA Output LOW voltage IOUT = 4 mA Storage capacitor Between VCAP pin and VSS Min 2.7 – Typ [15] 3.0 – Max 3.6 70 70 52 Unit V mA mA mA – – 10 mA – 35 – mA – – 5 mA – – 5 mA –1 – +1 A –100 –1 – – +1 +1 A A 2.0 Vss – 0.5 2.4 – 61 – – – – 68 VCC + 0.5 0.8 – 0.4 180 V V V V F Notes 15. Typical values are at 25 °C, VCC = VCC(Typ). Not 100% tested. 16. The HSB pin has IOUT = –2 µA for VOH of 2.4 V when both active HIGH and LOW drivers are disabled. When they are enabled standard VOH and VOL are valid. This parameter is characterized but not tested. 17. Min VCAP value guarantees that there is a sufficient charge available to complete a successful AutoStore operation. Max VCAP value guarantees that the capacitor on VCAP is charged to a minimum voltage during a Power-Up RECALL cycle so that an immediate power-down cycle can complete a successful AutoStore. Therefore it is always recommended to use a capacitor within the specified min and max limits. Refer application note AN43593 for more details on VCAP options. Document Number: 001-49918 Rev. *L Page 8 of 26 CY14B104LA, CY14B104NA DC Electrical Characteristics (continued) Over the Operating Range Parameter Description Test Conditions VVCAP[18, 19] Maximum voltage driven on VCAP VCC = Max pin by the device Min – Typ [15] – Max VCC Unit V Data Retention and Endurance Over the Operating Range Parameter Description Min Unit 20 Years 1,000 K Max Unit 7 pF Input capacitance (for BHE, BLE and HSB) 8 pF Output capacitance (except HSB) 7 pF Output capacitance (for HSB) 8 pF DATAR Data retention NVC Non-volatile STORE operations Capacitance Parameter[19] CIN COUT Description Test Conditions Input capacitance (except BHE, BLE and HSB) TA = 25 C, f = 1 MHz, VCC = VCC(Typ) Thermal Resistance Parameter[19] Description JA Thermal resistance (junction to ambient) JC Thermal resistance (junction to case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, in accordance with EIA/JESD51. 48-pin FBGA 44-pin TSOP II 54-pin TSOP II Unit 46.09 43.3 42.03 C/W 7.84 5.56 6.08 C/W Notes 18. Maximum voltage on VCAP pin (VVCAP) is provided for guidance when choosing the VCAP capacitor. The voltage rating of the VCAP capacitor across the operating temperature range should be higher than the VVCAP voltage. 19. These parameters are guaranteed by design and are not tested. Document Number: 001-49918 Rev. *L Page 9 of 26 CY14B104LA, CY14B104NA AC Test Loads Figure 5. AC Test Loads 577 3.0 V 577 3.0 V R1 for tristate specs R1 OUTPUT OUTPUT 30 pF R2 789 5 pF R2 789 AC Test Conditions Input pulse levels ................................................... 0 V to 3 V Input rise and fall times (10%–90%) ........................... < 3 ns Input and output timing reference levels ...................... 1.5 V Document Number: 001-49918 Rev. *L Page 10 of 26 CY14B104LA, CY14B104NA AC Switching Characteristics Over the Operating Range Parameters [20] Cypress Alt Parameter Parameter SRAM Read Cycle tACS tACE tRC[21] tRC tAA tAA[22] tOE tDOE [22] tOHA tOH tLZ tLZCE[23, 24] tHZ tHZCE[23, 24] tLZOE[23, 24] tOLZ tOHZ tHZOE[23, 24] tPA tPU[23] tPD[23] tPS – tDBE – tLZBE[23] tHZBE[23] – SRAM Write Cycle tWC tWC tPWE tWP tCW tSCE tDW tSD tHD tDH tAW tAW tAS tSA tHA tWR tHZWE[23, 24, 25] tWZ tOW tLZWE[23, 24] tBW – 20 ns Description 25 ns 45 ns Unit Min Max Min Max Min Max Chip enable access time Read cycle time Address access time Output enable to data valid Output hold after address change Chip enable to output active Chip disable to output inactive Output enable to output active Output disable to output inactive Chip enable to power active Chip disable to power standby Byte enable to data valid Byte enable to output active Byte disable to output inactive – 20 – – 3 3 – 0 – 0 – – 0 – 20 – 20 10 – – 8 – 8 – 20 10 – 8 – 25 – – 3 3 – 0 – 0 – – 0 – 25 – 25 12 – – 10 – 10 – 25 12 – 10 – 45 – – 3 3 – 0 – 0 – – 0 – 45 – 45 20 – – 15 – 15 – 45 20 – 15 ns ns ns ns ns ns ns ns ns ns ns ns ns ns Write cycle time Write pulse width Chip enable to end of write Data setup to end of write Data hold after end of write Address setup to end of write Address setup to start of write Address hold after end of write Write enable to output disable Output active after end of write Byte enable to end of write 20 15 15 8 0 15 0 0 – 3 15 – – – – – – – – 8 – – 25 20 20 10 0 20 0 0 – 3 20 – – – – – – – – 10 – – 45 30 30 15 0 30 0 0 – 3 30 – – – – – – – – 15 – – ns ns ns ns ns ns ns ns ns ns ns Switching Waveforms Figure 6. SRAM Read Cycle #1 (Address Controlled) [21, 22, 26] tRC Address Address Valid tAA Data Output Previous Data Valid Output Data Valid tOHA Notes 20. Test conditions assume signal transition time of 3 ns or less, timing reference levels of VCC/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH and load capacitance shown in Figure 5 on page 10. 21. WE must be HIGH during SRAM read cycles. 22. Device is continuously selected with CE, OE and BHE / BLE LOW. 23. These parameters are guaranteed by design but not tested. 24. Measured ±200 mV from steady state output voltage. 25. If WE is LOW when CE goes LOW, the outputs remain in the high impedance state. 26. HSB must remain HIGH during read and write cycles. Document Number: 001-49918 Rev. *L Page 11 of 26 CY14B104LA, CY14B104NA Switching Waveforms (continued) Figure 7. SRAM Read Cycle #2 (CE and OE Controlled) [27, 28, 29] Address Address Valid tRC tHZCE tACE CE tAA tLZCE tHZOE tDOE OE tHZBE tLZOE tDBE BHE, BLE tLZBE Data Output High Impedance Output Data Valid tPU ICC tPD Active Standby Figure 8. SRAM Write Cycle #1 (WE Controlled) [27, 29, 30, 31] tWC Address Address Valid tSCE tHA CE tBW BHE, BLE tAW tPWE WE tSA tSD Data Input Input Data Valid tHZWE Data Output tHD Previous Data tLZWE High Impedance Notes 27. BHE and BLE are applicable for × 16 configuration only. 28. WE must be HIGH during SRAM read cycles. 29. HSB must remain HIGH during read and write cycles. 30. If WE is LOW when CE goes LOW, the outputs remain in the high impedance state. 31. CE or WE must be >VIH during address transitions. Document Number: 001-49918 Rev. *L Page 12 of 26 CY14B104LA, CY14B104NA Switching Waveforms (continued) Figure 9. SRAM Write Cycle #2 (CE Controlled) [32, 33, 34, 35] tWC Address Valid Address tSA tSCE tHA CE tBW BHE, BLE tPWE WE tHD tSD Input Data Valid Data Input High Impedance Data Output Figure 10. SRAM Write Cycle #3 (BHE and BLE Controlled) [32, 33, 34, 35] tWC Address Address Valid tSCE CE tSA tHA tBW BHE, BLE tAW tPWE WE tSD Data Input tHD Input Data Valid High Impedance Data Output Notes 32. BHE and BLE are applicable for × 16 configuration only. 33. If WE is LOW when CE goes LOW, the outputs remain in the high impedance state. 34. HSB must remain HIGH during read and write cycles. 35. CE or WE must be >VIH during address transitions. Document Number: 001-49918 Rev. *L Page 13 of 26 CY14B104LA, CY14B104NA AutoStore/Power-Up RECALL Over the Operating Range Parameter tHRECALL [36] tSTORE [37] tDELAY [38] VSWITCH tVCCRISE[39] VHDIS[39] tLZHSB[39] tHHHD[39] 20 ns Description Power-Up RECALL duration STORE cycle duration Time allowed to complete SRAM write cycle Low voltage trigger level VCC rise time HSB output disable voltage HSB to output active time HSB high active time 25 ns 45 ns Min – – – Max 20 8 20 Min – – – Max 20 8 25 Min – – – Max 20 8 25 – 150 – – – 2.65 – 1.9 5 500 – 150 – – – 2.65 – 1.9 5 500 – 150 – – – 2.65 – 1.9 5 500 Unit ms ms ns V s V s ns Switching Waveforms – AutoStore/Power-up RECALL Figure 11. AutoStore or Power-Up RECALL [40] VCC VSWITCH VHDIS t VCCRISE tHHHD Note 37 Note37 tSTORE tHHHD 41 Note tSTORE Note 41 HSB OUT tDELAY tLZHSB AutoStore tLZHSB tDELAY POWERUP RECALL tHRECALL tHRECALL Read & Write Inhibited (RWI) POWER-UP RECALL Read & Write BROWN OUT AutoStore POWER-UP RECALL Read & Write POWER DOWN AutoStore Notes 36. tHRECALL starts from the time VCC rises above VSWITCH. 37. If an SRAM write has not taken place since the last non-volatile cycle, no AutoStore or Hardware STORE takes place. 38. On a Hardware STORE and AutoStore initiation, SRAM write operation continues to be enabled for time tDELAY. 39. These parameters are guaranteed by design but not tested. 40. Read and write cycles are ignored during STORE, RECALL, and while VCC is below VSWITCH. 41. During power-up and power-down, HSB glitches when HSB pin is pulled up through an external resistor. Document Number: 001-49918 Rev. *L Page 14 of 26 CY14B104LA, CY14B104NA Software Controlled STORE/RECALL Cycle Over the Operating Range Parameter [42, 43] tRC tSA tCW tHA tRECALL Description Min 20 0 15 0 – STORE/RECALL initiation cycle time Address setup time Clock pulse width Address hold time RECALL duration 20 ns Max – – – – 200 Min 25 0 20 0 – 25 ns Max – – – – 200 Min 45 0 30 0 – 45 ns Max – – – – 200 Unit ns ns ns ns s Switching Waveforms – Software Controlled STORE/RECALL Cycle Figure 12. CE and OE Controlled Software STORE/RECALL Cycle [43] tRC Address tRC Address #1 tSA Address #6 tCW tCW CE tHA tSA tHA tHA tHA OE tHHHD HSB (STORE only) tHZCE tLZCE t DELAY 44 Note tLZHSB High Impedance tSTORE/tRECALL DQ (DATA) RWI Figure 13. AutoStore Enable/Disable Cycle[43] Address tRC tRC Address #1 Address #6 tSA CE tCW tCW tHA tSA tHA tHA tHA OE tLZCE tHZCE tSS 44 Note t DELAY DQ (DATA) RWI Notes 42. The software sequence is clocked with CE controlled or OE controlled reads. 43. The six consecutive addresses must be read in the order listed in Table 1 on page 6. WE must be HIGH during all six consecutive cycles. 44. DQ output data at the sixth read may be invalid since the output is disabled at tDELAY time. Document Number: 001-49918 Rev. *L Page 15 of 26 CY14B104LA, CY14B104NA Hardware STORE Cycle Over the Operating Range Parameter 20 ns Description 25 ns 45 ns Min Max Min Max Min Max 20 – 25 – 25 Unit tDHSB HSB to output active time when write latch not set – ns tPHSB Hardware STORE pulse width 15 – 15 – 15 – ns tSS [45, 46] Soft sequence processing time – 100 – 100 – 100 s Switching Waveforms – Hardware STORE Cycle Figure 14. Hardware STORE Cycle [47] Write latch set tPHSB HSB (IN) tSTORE tHHHD tDELAY HSB (OUT) tLZHSB DQ (Data Out) RWI Write latch not set tPHSB HSB pin is driven high to VCC only by Internal 100 kOhm resistor, HSB driver is disabled SRAM is disabled as long as HSB (IN) is driven low. HSB (IN) HSB (OUT) tDELAY tDHSB tDHSB RWI Figure 15. Soft Sequence Processing [45, 46] Soft Sequence Command Address Address #1 tSA Address #6 tCW tSS Soft Sequence Command Address #1 tSS Address #6 tCW CE VCC Notes 45. This is the amount of time it takes to take action on a soft sequence command. VCC power must remain HIGH to effectively register command. 46. Commands such as STORE and RECALL lock out I/O until operation is complete which further increases this time. See the specific command. 47. If an SRAM write has not taken place since the last non-volatile cycle, no AutoStore or Hardware STORE takes place. Document Number: 001-49918 Rev. *L Page 16 of 26 CY14B104LA, CY14B104NA Truth Table For SRAM Operations HSB should remain HIGH for SRAM Operations. Table 2. Truth Table for × 8 Configuration CE Inputs/Outputs[48] WE OE Mode Power H X X High Z Deselect/Power-down Standby L H L Data out (DQ0–DQ7); Read Active L H H High Z Output disabled Active L L X Data in (DQ0–DQ7); Write Active Table 3. Truth Table for × 16 Configuration BHE[49] BLE[49] Inputs/Outputs[48] CE WE OE Mode Power H X X X X High Z Deselect/Power-down Standby L X X H H High Z Output disabled Active L H L L L Data out (DQ0–DQ15) Read Active L H L H L Data out (DQ0–DQ7); DQ8–DQ15 in High Z Read Active L H L L H Data out (DQ8–DQ15); DQ0–DQ7 in High Z Read Active L H H L L High Z Output disabled Active L H H H L High Z Output disabled Active L H H L H High Z Output disabled Active L L X L L Data in (DQ0–DQ15) Write Active L L X H L Data in (DQ0–DQ7); DQ8–DQ15 in High Z Write Active L L X L H Data in (DQ8–DQ15); DQ0–DQ7 in High Z Write Active Notes 48. Data DQ0–DQ7 for × 8 configuration and Data DQ0–DQ15 for × 16 configuration. 49. BHE and BLE are applicable for × 16 configuration only. Document Number: 001-49918 Rev. *L Page 17 of 26 CY14B104LA, CY14B104NA Ordering Information Speed (ns) 20 25 45 Ordering Code Package Diagram CY14B104LA-ZS20XIT 51-85087 44-pin TSOP II CY14B104LA-ZS20XI 51-85087 44-pin TSOP II CY14B104NA-ZS20XIT 51-85087 44-pin TSOP II CY14B104NA-ZS20XI 51-85087 44-pin TSOP II CY14B104NA-BA20XIT 51-85128 48-ball FBGA CY14B104NA-BA20XI 51-85128 48-ball FBGA CY14B104LA-ZS25XIT 51-85087 44-pin TSOP II CY14B104LA-ZS25XI 51-85087 44-pin TSOP II CY14B104LA-BA25XIT 51-85128 48-ball FBGA CY14B104LA-BA25XI 51-85128 48-ball FBGA CY14B104NA-ZS25XIT 51-85087 44-pin TSOP II CY14B104NA-ZS25XI 51-85087 44-pin TSOP II CY14B104NA-BA25XIT 51-85128 48-ball FBGA CY14B104NA-BA25XI 51-85128 48-ball FBGA CY14B104NA-BA25I 51-85128 48-ball FBGA CY14B104NA-BA25IT 51-85128 48-ball FBGA CY14B104NA-ZSP25XIT 51-85160 54-pin TSOP II CY14B104NA-ZSP25XI 51-85160 54-pin TSOP II CY14B104LA-ZS45XIT 51-85087 44-pin TSOP II CY14B104LA-ZS45XI 51-85087 44-pin TSOP II CY14B104LA-BA45XIT 51-85128 48-ball FBGA CY14B104LA-BA45XI 51-85128 48-ball FBGA CY14B104NA-ZS45XIT 51-85087 44-pin TSOP II CY14B104NA-ZS45XI 51-85087 44-pin TSOP II CY14B104NA-BA45XIT 51-85128 48-ball FBGA CY14B104NA-BA45XI 51-85128 48-ball FBGA CY14B104NA-ZSP45XIT 51-85160 54-pin TSOP II CY14B104NA-ZSP45XI 51-85160 54-pin TSOP II Document Number: 001-49918 Rev. *L Package Type Operating Range Industrial Page 18 of 26 CY14B104LA, CY14B104NA Ordering Code Definitions CY 14 B 104 L A - ZS 20 X I T Option: T - Tape & Reel Blank - Std. X - Pb-free Blank - Sn Pb Die Revision: Blank - No Rev A - 1st Rev Voltage: B - 3.0 V Temperature: I - Industrial (–40 C to 85 C) Package: BA – 48-ball FBGA ZS – 44-pin TSOP II ZSP – 54-pin TSOP II Data Bus: L-×8 N - × 16 Speed: 20 - 20 ns 25 - 25 ns 45 - 45 ns Density: 104 - 4 Mb 14 - nvSRAM Cypress Document Number: 001-49918 Rev. *L Page 19 of 26 CY14B104LA, CY14B104NA Package Diagrams Figure 16. 44-pin TSOP II Package Outline, 51-85087 51-85087 *D Document Number: 001-49918 Rev. *L Page 20 of 26 CY14B104LA, CY14B104NA Package Diagrams (continued) Figure 17. 48-ball FBGA (6 × 10 × 1.2 mm) Package Outline, 51-85128 51-85128 *F Document Number: 001-49918 Rev. *L Page 21 of 26 CY14B104LA, CY14B104NA Package Diagrams (continued) Figure 18. 54-pin TSOP II (22.4 × 11.84 × 1.0 mm) Package Outline, 51-85160 51-85160 *C Document Number: 001-49918 Rev. *L Page 22 of 26 CY14B104LA, CY14B104NA Acronyms Acronym Document Conventions Description Units of Measure BHE byte high enable BLE byte low enable °C degree Celsius CE CMOS chip enable Hz hertz complementary metal oxide semiconductor kHz kilohertz EIA electronic industries alliance k kilo-ohm FBGA fine-pitch ball grid array MHz megahertz HSB I/O hardware store busy A microampere input/output F microfarad nvSRAM non-volatile static random access memory s microsecond OE RoHS output enable mA milliampere restriction of hazardous substances ms millisecond RWI read and write inhibited ns nanosecond SRAM static random access memory ohm TSOP thin small outline package % percent WE write enable pF picofarad V volt W watt Document Number: 001-49918 Rev. *L Symbol Unit of Measure Page 23 of 26 CY14B104LA, CY14B104NA Document History Page Document Title: CY14B104LA/CY14B104NA, 4-Mbit (512 K × 8/256 K × 16) nvSRAM Document Number: 001-49918 Rev. ECN Orig. of Change Submission Date ** 2606696 GVCH / PYRS 11/13/08 New data sheet. *A 2672700 GVCH / PYRS 03/12/09 Added best practices Updated Ordering Information (Added CY14B104NA-BA25I). Updated AC Switching Characteristics (Added Note 23 and referred the same note in tLZCE, tHZCE, tLZOE, and tHZOE parameters). *B 2710274 GVCH / AESA 05/22/09 Moved data sheet status from Preliminary to Final. Updated AutoStore Operation (description (Added Note)). Updated DC Electrical Characteristics (Updated test condition for ISB parameter, updated Note 15). Updated AutoStore/Power-Up RECALL (Added Note 39 and referred the same note in tVCCRISE, tLZHSB and tHHHD parameters, updated description of VHDIS parameter). Updated Switching Waveforms – Software Controlled STORE/RECALL Cycle (Updated Figure 12). *C 2738586 GVCH 07/15/09 Updated Device Operation (Updated Hardware STORE Operation (description), updated Software STORE (description)). Updated AutoStore/Power-Up RECALL (description of tDELAY parameter, updated Note 38). Updated Switching Waveforms – Software Controlled STORE/RECALL Cycle (Added Note 44 and referred the same note in Figure 12 and Figure 13). *D 2758397 GVCH / AESA 09/01/09 Updated Features (Removed commercial temperature related information). Updated Operating Range (Removed commercial temperature related information). Updated DC Electrical Characteristics (Removed commercial temperature related information). Updated Ordering Information. *E 2773362 GVCH 10/06/09 Updated Ordering Information (Added 20 ns parts in a 48-ball FBGA package). *F 2826364 GVCH / PYRS 12/11/09 Updated Features (Changed STORE cycles to QuantumTrap from 200K to 1 Million). *G 2923475 GVCH / AESA 04/27/2010 Updated Pin Definitions (Added more clarity on HSB pin operation). Updated Device Operation (Updated Hardware STORE Operation (added more clarity on HSB pin operation), updated Table 1 (added more clarity on BHE/BLE pin operation)). Updated Switching Waveforms – AutoStore/Power-up RECALL (HSB pin operation in Figure 11 and updated Note 41). Updated Package Diagrams Updated Sales, Solutions, and Legal Information. *H 3132368 GVCH 01/10/2011 Updated Pinouts (Removed the reference of Note 5 in Figure 1). Updated Capacitance (Included input capacitance for BHE, BLE and HSB pin, output capacitance for HSB pin). Updated Switching Waveforms – AutoStore/Power-up RECALL (Fixed typo error in Figure 11). Added Acronyms and Units of Measure. *I 3305495 GVCH 07/07/2011 Updated DC Electrical Characteristics (Added Note 17 and referred the same note in VCAP parameter). Updated AC Switching Characteristics (Added Note 20 and referred the same note in Parameters). Updated Thermal Resistance (Values of JA for all packages). Updated Package Diagrams. Document Number: 001-49918 Rev. *L Description of Change Page 24 of 26 CY14B104LA, CY14B104NA Document History Page (continued) Document Title: CY14B104LA/CY14B104NA, 4-Mbit (512 K × 8/256 K × 16) nvSRAM Document Number: 001-49918 Rev. ECN Orig. of Change Submission Date *J 3389991 GVCH 09/30/2011 Updated Package Diagrams. *K 3514367 GVCH 02/01/2012 Removed Best Practices. Updated Ordering Information (Added CY14B104NA-BA25IT). *L 3643590 GVCH 06/13/2012 Updated DC Electrical Characteristics (Added VVCAP parameterand its details, added Note 18 and referred the same note in VVCAP parameter). Document Number: 001-49918 Rev. *L Description of Change Page 25 of 26 CY14B104LA, CY14B104NA Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive Clocks & Buffers Interface Lighting & Power Control PSoC Solutions cypress.com/go/automotive cypress.com/go/clocks psoc.cypress.com/solutions cypress.com/go/interface PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/powerpsoc cypress.com/go/plc Memory Optical & Image Sensing cypress.com/go/memory cypress.com/go/image PSoC Touch Sensing cypress.com/go/psoc cypress.com/go/touch USB Controllers Wireless/RF cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2008-2012. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-49918 Rev. *L Revised June 13, 2012 All products and company names mentioned in this document may be the trademarks of their respective holders. Page 26 of 26