Surface Mount Switching Diode COMCHIP www.comchip.com.tw BAV99 Thru BAW56 Voltage: 70 Volts Current: 215mA Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertio For General Purpose Switching Applications SOT-23 High Conductance Mechanical data .119 (3.0) .110 (2.8) .020 (0.5) BAV99 BAL99 ANODE .056 (1.40) .047 (1.20) 1 1 2 .037(0.95) .037(0.95) 1 3 3 ANODE ANODE 2 2 CATHODE CATHODE CATHODE ANODE CATHODE .006 (0.15)max. This diodes is also available in other configurations including a dual common cathode with type designation BAV70, a dual common anodes with type designation BAW56 and single chip inside with type Designation BAL99 CATHODE Top View 3 .044 (1.10) .035 (0.90) Approx. Weight: 0.008 gram .006 (0.15) .002 (0.05) Case: SOT -23, Plastic 1 ANODE 2 ANODE 3 1 .020 (0.5) .103 (2.6) .086 (2.2) .020 (0.5) 3 CATHODE 2 ANODE CATHODE BAV70 Dimensions in inches (millimeters) BAW56 Maximum Ratings Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR Value 70 Units VDC IF 215 mAdc IFM(surge) 500 mAdc Symbol Max Units Thermal Characteristics Characteristic Total Device Dissipation FR– 5 Board(1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature PD RșJA PD 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C RșJA 417 °C/W TJ, Tstg –55 to +150 °C Symbol V(BR) Min Max Units 70 - Vdc - 30 - 2.5 - 50 - 1.5 715 Electrical Characterics (TA = 25°C unless otherwise noted) Characteristic (OFF CHARACTERISTICS) Reverse Breakdown Voltage ( I(BR) = 100 uAdc ) Reverse Voltage Leakage Current VR = 25 Vdc, TJ = 150°C V R = 70 Vdc IR V R = 70 Vdc, TJ = 150°C Diode Capacitance (VR = 0, f = 1.0 MHz)) Forward Voltage I F = 1.0 mAdc I F = 10 mAdc I F = 50 mAdc CD VF I F = 150 mAdc Reverse Recovery Time (IF = IR = 10 mAdc, I R(REC) = 1.0mAdc) RL = 100ȍ 1.FR–5 = 1.0 X 0.75X 0.062 in. MDS0210001A Trr - 855 - 1000 - 1250 uAdc pF mV nS 6.0 2.Aluminum = 0.4X 0.3X 0.024 in. 99.5% aluminum. Page 1 Surface Mount Switching Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (BAV99 Thru BAW56) 820 Ω +10 V 2.0 k tr 0.1 µF 100 µH tp IF IF t trr 10% t 0.1 µF 90% DUT 50 Ω Input Sampling Oscilloscopes 50 Ω Output Pulse Generator IR(REC) = 1.0 mA IR VR Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) Input Signal Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 100 TA = 85°C TA = 125°C IR , Reverse Current (µA) 1.0 10 TA = – 40°C 1.0 TA = 25°C TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 VF, Forward Voltage (V) 1.0 0 1.2 10 Figure 2. Forward Voltage 20 30 VR, Reverse Voltage (V) 50 40 Figure 3. Leakage Current 0.68 CD, Diode Capacitance (pF) IF, Forward Current (mA) (mA) TA = 150°C 0.64 0.60 0.56 0.52 0 2 4 6 8 VR, Reverse Voltage (V) Figure 4. Capacitance MDS0210001A Page 2