Panasonic DSC2501T0L Silicon npn epitaxial planar type Datasheet

This product complies with the RoHS Directive (EU 2002/95/EC).
DSC2501
Silicon NPN epitaxial planar type
For low frequency amplification
 Package
 Features
 Low collector-emitter saturation voltage VCE(sat)
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Code
Mini3-G3-B-B
 Pin Name
1. Base
2. Emitter
3. Collector
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
25
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
12
V
Collector current
IC
0.5
A
Peak collector current
ICP
1
A
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
 Marking Symbol: E3
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 mA, IE = 0
25
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
20
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 mA, IC = 0
12
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 25 V, IE = 0
Forward current transfer ratio *2
hFE
VCE = 2 V, IC = 0.5 A
Collector-emitter saturation voltage *1
VCE(sat)
IC = 0.5 A, IB = 20 mA
Base-emitter saturation voltage *1
VBE(sat)
IC = 0.5 A, IB = 50 mA
fT
VCE = 10 V, IC = 50 mA
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistance
Cob
*3
200
0.18
VCB = 10 V, IE = 0, f = 1 MHz
Ron
100
nA
800

0.40
V
1.2
V
150
MHz
6
pF
1.0
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
R
S
T
0
Rank
R
S
T
No-rank
hFE
200 to 350
300 to 500
400 to 800
200 to 800
Marking Symbol
E3R
E3S
E3T
E3
Product of no-rank is not classified and have no marking symbol for rank.
*3: Ron measurement circuit
1 kΩ
f = 1 kHz
V = 0.3 V
VB VV
Publication date: June 2010
VA
ZJC00467AED
Ron =
VB × 1 000
(Ω)
VA − VB
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC2501
DSC2501_PC-Ta
DSC2501_IC-VCE
PC  Ta
1 000
150
100
50
40
80
120
160
800
IB = 3.0 mA
600
1.5 mA
400
0.5 mA
200
Ambient temperature Ta (°C)
0
1
Ta = 85°C
−30°C
25°C
10
1 000
Collector current IC (mA)
Collector-emitter saturation voltage VCE(sat) (V)
IC / IB = 25
1
102
103
Ta = 85°C
−30°C
400
200
0
0
0.2
0.4
0.6
VCE = 10 V
Ta = 25°C
Transition frequency fT (MHz)
400
200
0
1
0.8
200
150
100
50
100
Collector current IC (mA)
ZJC00467AED
10
102
103
Collector current IC (mA)
Cob  VCB
25°C
600
fT  IC
2
−30°C
DSC2501_Cob-VCB
800
250
10
600
6
VCE = 2 V
DSC2501_fT-IC
1
5
1.0
Base-emitter voltage VBE (V)
Collector current IC (mA)
0
0.1
4
25°C
IC  VBE
1
10−2
3
800
DSC2501_IC-VBE
VCE(sat)  IC
10−1
2
VCE = 2 V
Ta = 85°C
Collector-emitter voltage VCE (V)
DSC2501_VCEsat-IC
10
2.5 mA
2.0 mA
1.0 mA
0
200
Ta = 25°C
1.2
Collector output capacitance
(Common base, input open circuited) Cob (pF)
0
hFE  IC
1 000
Forward current transfer ratio hFE
200
Collector current IC (mA)
Collector power dissipation PC (mW)
250
0
DSC2501_hFE-IC
IC  VCE
14
IE = 0
f = 1 MHz
Ta = 25°C
12
10
8
6
4
2
0
1
10
100
Collector-base voltage VCB (V)
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC2501
Mini3-G3-B-B
Unit: mm
+0.10
0.40 −0.05
+0.10
0.16 −0.06
+0.2
5°
0.4 ±0.2
2.8 −0.3
1.50 −0.05
+0.25
3
2
1
1.9 ±0.1
+0.20
2.90 −0.05
(0.65)
(0.95)
(0.95)
+0.3
1.1 −0.1
0 to 0.1
1.1 −0.1
+0.2
10°
ZJC00467AED
3
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