BTX18-100/BTX18-200/BTX18-300 BTX18-400/BTX18-500 SILICON THYRISTORS The BTX18 series is a range of p-gate reverse blocking thyristors, in a TO-39 metal enveloppe, intended for use in general low power applications up to a A average on-state current. RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Anode to Cathode - Ratings Voltage 1) Symbol Ratings BTX18- BTX18- BTX18- BTX18- BTX18100 200 300 400 500 VR Continuous Reverse Voltage 100 200 300 400 500 V VRWM Crest Working Reverse Voltage 100 200 300 400 500 V 120 240 350 500 600 V 120 240 350 500 600 V VRSM Repetitive Peak Reverse Voltage (δ = 0.01 ; f=50Hz) Non-repetitive peak reverse voltage (t<10ms) VDWM Crest Working off-state Voltage 100 200 300 400 500 V VD Continuous off-state Voltage 100 200 300 400 500 V 120 240 350 500 600 V²) 120 240 350 500 600 V²) VRRM VDRM VDSM Repetitive peak off-state voltage (δ = 0.01 ; f=50Hz) Non-repetitive peak off-state voltage (t<10ms) Currents Symbol IT(AV) IT IT(RMS) Ratings BTX18- BTX18- BTX18- BTX18- BTX18100 200 300 400 500 Average on-state current TCASE=105°C (averaged over any 20 TAMB=60°C, in ms period) free air On-state Current (D.C.) TCASE=100°C Max : 1.0 A Max : 250 mA Max : 1.6 A Max : 1.6 A RMS on-state Current COMSET SEMICONDUCTORS 1/4 BTX18-100/BTX18-200/BTX18-300 BTX18-400/BTX18-500 Symbol ITRM ITSM TJ Tstg BTX18- BTX18- BTX18- BTX18- BTX18100 200 300 400 500 Ratings Max : 10 A 10 A V Max : 125°C -55 to +125°C °C Repetitive Peak on-state Current Non-repetitive peak on-state current t=10ms ; TJ=125°C prior to surge Junction Temperature Storage Temperature 1) These ratings apply for zero or negative bias on the gate with respect to the cathode, and when a resistor R<1 kΩ is connected between gate and cathode 2) The device is not suitable for operation in the forward breakover mode. Gate to Cathode - Ratings With 1Ω Ω resistor between gate and cathode Symbol BTX18 BTX18 BTX18 BTX18 BTX18 -100 -200 -300 -400 -500 Ratings VFGM Forward Peak Voltage Max : 10 V V VRGM Reverse Peak Voltage Max : 5 V V IFGM Forward Peak Current Max : 0.2 A PG(AV) Average Power Dissipation (averaged over any 20 ms period) Max : 0.05 W PGM Peak Power Dissipation Max : 0.5 W Temperatures Symbol BTX18 BTX18 BTX18 BTX18 BTX18 -100 -200 -300 -400 -500 Ratings Rth j-c From Junction to Case 10 °C/W Rth j-a From Junction to Ambient 200 °C/W Zth j-c Transient Thermal Resistance (t=10 ms) 2.5 °C/W Anode to Cathode - Characteristics Symbol VT BTX18 BTX18 BTX18 BTX18 BTX18 -100 -200 -300 -400 -500 Ratings On State Voltage IT=1.0 A, Tj=25°C < 1.5 COMSET SEMICONDUCTORS 1.5 1.5 1.5 1.5 2/4 1 V) BTX18-100/BTX18-200/BTX18-300 BTX18-400/BTX18-500 Symbol IRM IDM BTX18 BTX18 BTX18 BTX18 BTX18 -100 -200 -300 -400 -500 Ratings Peak Reverse Current VRM=VRWmax ; Tj=125°C Peak off-state Current VDM=VDWmax ; Tj=125°C IL Latching current, Tj=125°C IH Holding Current ; Tj=25°C < 800 400 275 200 160 µA < 800 400 275 200 160 µA < Typ : 10 mA 5.0 ²) mA Gate to Cathode – Characteristics Symbol VGT VGD IGT BTX18 BTX18 BTX18 BTX18 BTX18 -100 -200 -300 -400 -500 Ratings Voltage that will trigger all devices Tj=25°C Voltage that will not trigger any device Tj=125°C Current that vill trigger all devices Tj=25°C > 2.0 V < 200 mV > 5.0 mA Switching Characteristics Symbol Tj=25°C Turn off time when switched from IT=300 mA to IR=175 mA IDM BTX18 BTX18 BTX18 BTX18 BTX18 -100 -200 -300 -400 -500 Ratings Type : 20 µs tq Tj=125°C Peak off-state Current VDM=VDWmax ; Tj=125°C Typ : 35 < 800 400 275 200 160 1) VT is measured along the leads at 1 cm from the case 2) Measurer under the following conditiond : Anode sypply voltage= +6.0V Initial on-state current after gate triggering= 50mA The current is reduced until the device turns of. COMSET SEMICONDUCTORS 3/4 µs BTX18-100/BTX18-200/BTX18-300 BTX18-400/BTX18-500 MECHANICAL DATA CASE TO-39 DIMENSIONS A B C D E F G H L Pin 1 : Pin 2 : Pin 3 : mm inches 6,71 0,26 13,2 0,51 9,23 0,36 8,34 0,32 0,8 0,03 0,8 0,03 0,42 0,016 45° 4,97 0,2 Kathode Gate Anode COMSET SEMICONDUCTORS 4/4