SPANSION AM75PDL193CHH 128 megabit (8 m x 16-bit) cmos 3.0 volt-only, simultaneous read/write flash memory Datasheet

Am75PDL191CHH/
Am75PDL193CHH
Data Sheet
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 31096 Revision A
Amendment +1 Issue Date February 5, 2004
THIS PAGE LEFT INTENTIONALLY BLANK.
ADVANCE INFORMATION
Am75PDL191CHH/Am75PDL193CHH
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
with Enhanced Versatile I/O Control and Dual Chip Enable Input plus, for Additional Code
or Data Storage, 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write
Flash Memory and 64 Mbit (4 M x 16-Bit)
CMOS Pseudo Static RAM
DISTINCTIVE CHARACTERISTICS
For Code Storage:
Am29PDL127H/Am29PDL129H Features
■ Both top and bottom boot blocks in one device
■ Manufactured on 0.13 µm process technology
■ 20-year data retention at 125°C
ARCHITECTURAL ADVANTAGES
■ Minimum 1 million erase cycle guarantee per sector
■ 128 Mbit Page Mode device
— Page size of 8 words: Fast page read access from random
locations within the page
■ Dual Chip Enable inputs (PDL129 only)
— Two CE inputs control selection of each half of the memory
space
■ Single power supply operation
— Full Voltage range: 2.7 to 3.3 volt read, erase, and program
operations for battery-powered applications
PERFORMANCE CHARACTERISTICS
■ High Performance
— Page access times as fast as 30 ns
— Random access times as fast as 70 ns
■ Power consumption (typical values at 10 MHz)
— 45 mA active read current
— 25 mA program/erase current
— 1 µA typical standby mode current
■ Simultaneous Read/Write Operation
— Data can be continuously read from one bank while
executing erase/program functions in another bank
— Zero latency switching from write to read operations
■ FlexBank Architecture
PDL127:
Bank A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
Bank B: 48 Mbit (32 Kw x 96)
Bank C: 48 Mbit (32 Kw x 96)
Bank D: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
PDL129:
—
—
—
—
■ Software command-set compatible with JEDEC 42.4
standard
— Backward compatible with Am29F and Am29LV families
— 4 separate banks, with up to two simultaneous operations
per device
—
—
—
—
SOFTWARE FEATURES
Bank 1A: 48 Mbit (32 Kw x 96)
Bank 1B: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
Bank 2A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
Bank 2B: 48 Mbit (32 Kw x 96)
■ CFI (Common Flash Interface) complaint
— Provides device-specific information to the system, allowing
host software to easily reconfigure for different Flash devices
■ Erase Suspend / Erase Resume
— Suspends an erase operation to allow read or program
operations in other sectors of same bank
■ Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
■ SecSiTM (Secured Silicon) Sector region
— Up to 128 words accessible through a command sequence
— Up to 64 factory-locked words
— Up to 64 customer-lockable words
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 31096 Rev: A Amendment 1
Issue Date: February 5, 2004
Refer to AMD’s Website (www.amd.com) for the latest information.
A D V A N C E
I N F O R M A T I O N
HARDWARE FEATURES
— Pinout and software compatible with
single-power-supply flash standard
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or erase
cycle completion
■ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array data
■ WP#/ACC (Write Protect/Acceleration) input
— At VIL, hardware level protection for the first and last two 4K
word sectors.
— At VIH, allows removal of sector protection
— At VHH, provides accelerated programming in a factory
setting
■ Persistent Sector Protection
— A command sector protection method to lock combinations
of individual sectors and sector groups to prevent program or
erase operations within that sector
— Sectors can be locked and unlocked in-system at VCC level
■ Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups to
prevent program or erase operations within that sector using
a user-defined 64-bit password
FOR CODE OR DATA STORAGE:
AM29DL640H
■ Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
■ Flexible BankTM architecture
— Read may occur in any of the three banks not being
written or erased.
— Four banks may be grouped by customer to achieve
desired bank divisions.
■ Boot Sectors
— Top and bottom boot sectors in the same device
— Any combination of sectors can be erased
■ Manufactured on 0.13 µm process technology
■ SecSi™ (Secured Silicon) Sector: Extra 256 Byte
sector
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
— Customer lockable: One-time programmable only.
Once locked, data cannot be changed
■ Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
■ Compatible with JEDEC standards
2
PERFORMANCE CHARACTERISTICS
■ High performance
— Access time as fast as 70 ns
— Program time: 4 µs/word typical utilizing Accelerate
function
■ Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■ Minimum 1 million erase cycles guaranteed per
sector
■ 20 year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
■ Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
■ Supports Common Flash Memory Interface (CFI)
■ Erase Suspend/Erase Resume
— Suspends erase operations to allow reading from
other sectors in same bank
■ Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■ Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■ Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
■ WP#/ACC input pin
— Write protect (WP#) function protects sectors 0, 1,
140, and 141, regardless of sector protect status
— Acceleration (ACC) function accelerates program
timing
■ Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
PSRAM FEATURES
■ Organized as 4,194,304 words by 16 bits
■ Single power supply voltage of 2.7 to 3.3 V
■ Direct TTL compatibility for all inputs and outputs
■ Deep power-down mode: Memory cell data invalid
■ Page operation mode:
■ 8-word Page read operation
■ Logic compatible with SRAM R/W (WE) pin
■ Standby current
— Standby 100 µA
— Deep power-down standby 5 µA
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
3
A D V A N C E
I N F O R M A T I O N
GENERAL DESCRIPTION (PDL129)
The Am29PDL129H is a 128 Mbit, 3.0 volt-only Page Mode
and Simultaneous Read/Write Flash memory device organized as 8 Mwords. The word-wide data (x16) appears on
DQ15-DQ0. This device can be programmed in-system or in
standard EPROM programmers. A 12.0 V VPP is not required
for write or erase operations.
The device offers fast page access time of 25 and 30 ns,
with corresponding random access times of 65 and 85 ns,
respectively, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#f1, CE#f2), write enable
(WE#) and output enable (OE#) controls. Dual Chip Enables
allow access to two 64 Mbit partitions of the 128 Mbit memory space.
Simultaneous Read/Write Operation with
Zero Latency
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into 4
banks, which can be considered to be four separate memory
arrays as far as certain operations are concerned. The device can improve overall system performance by allowing a
host system to program or erase in one bank, then immediately and simultaneously read from another bank with zero
latency (with two simultaneous operations operating at any
one time). This releases the system from waiting for the
completion of a program or erase operation, greatly improving system performance.
The device can be organized in both top and bottom sector
configurations. The banks are organized as follows:
Chip Enable Configuration
CE#f1 Control
CE#f2 Control
Bank 1A
48 Mbit (32 Kw x 96)
Bank 2A
16 Mbit (4 Kw x 8 and 32 Kw x 31)
Bank 1B
16 Mbit (4 Kw x 8 and 32 Kw x 31)
Bank 2B
48 Mbit (32 Kw x 96)
Page Mode Features
The page size is 8 words. After initial page access is accomplished, the page mode operation provides fast read access
speed of random locations within that page.
Standard Flash Memory Features
The device requires a single 3.0 volt power supply (2.7 V
to 3.3 V) for both read and write functions. Internally generated and regulated voltages are provided for the program
and erase operations.
4
The device is entirely command set compatible with the
JEDEC 42.4 single-power-supply Flash standard. Commands are written to the command register using standard
microprocessor write timing. Register contents serve as inputs to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase
operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. The Unlock Bypass mode facilitates faster
programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence.
The host system can detect whether a program or erase operation is complete by reading the DQ7 (Data# Polling) and
DQ6 (toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when
shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations during
power transitions. The hardware sector protection feature
disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or
via programming equipment.
The Erase Suspend/Erase Resume feature enables the
user to put erase on hold for any period of time to read data
from, or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved. If a
read is needed from the SecSi Sector area (One Time Program area) after an erase suspend, then the user must use
the proper command sequence to enter and exit this region.
The device offers two power-saving features. When addresses have been stable for a specified amount of time, the
device enters the automatic sleep mode. The system can
also place the device into the standby mode. Power consumption is greatly reduced in both these modes.
AMD’s Flash technology combined years of Flash memory
manufacturing experience to produce the highest levels of
quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via
Fowler-Nordheim tunneling. The data is programmed using
hot electron injection.
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
GENERAL DESCRIPTION (PDL127)
The Am29PDL127H is a 128 Mbit, 3.0 volt-only Page Mode
and Simultaneous Read/Write Flash memory device organized as 8 Mwords. The word-wide data (x16) appears on
DQ15-DQ0. This device can be programmed in-system or in
standard EPROM programmers. A 12.0 V VPP is not required
for write or erase operations.
microprocessor write timing. Register contents serve as inputs to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase
operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.
The device offers fast page access time of 25 and 30 ns,
with corresponding random access times of 65 and 85 ns,
respectively, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#f1), write enable (WE#)
and output enable (OE#) controls. Simultaneous Read/Write
Operation with Zero Latency
Device programming occurs by executing the program command sequence. The Unlock Bypass mode facilitates faster
programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence.
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into 4
banks, which can be considered to be four separate memory
arrays as far as certain operations are concerned. The device can improve overall system performance by allowing a
host system to program or erase in one bank, then immediately and simultaneously read from another bank with zero
latency (with two simultaneous operations operating at any
one time). This releases the system from waiting for the
completion of a program or erase operation, greatly improving system performance.
The device can be organized in both top and bottom sector
configurations. The banks are organized as follows:
Bank
Sectors
A
16 Mbit (4 Kw x 8 and 32 Kw x 31)
B
48 Mbit (32 Kw x 96)
C
48 Mbit (32 Kw x 96)
D
16 Mbit (4 Kw x 8 and 32 Kw x 31)
Page Mode Features
The page size is 8 words. After initial page access is accomplished, the page mode operation provides fast read access
speed of random locations within that page.
Standard Flash Memory Features
The device requires a single 3.0 volt power supply (2.7 V
to 3.3 V) for both read and write functions. Internally generated and regulated voltages are provided for the program
and erase operations.
The device is entirely command set compatible with the
JEDEC 42.4 single-power-supply Flash standard. Commands are written to the command register using standard
February 5, 2004
The host system can detect whether a program or erase operation is complete by reading the DQ7 (Data# Polling) and
DQ6 (toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when
shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations during
power transitions. The hardware sector protection feature
disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or
via programming equipment.
The Erase Suspend/Erase Resume feature enables the
user to put erase on hold for any period of time to read data
from, or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved. If a
read is needed from the SecSi Sector area (One Time Program area) after an erase suspend, then the user must use
the proper command sequence to enter and exit this region.
The device offers two power-saving features. When addresses have been stable for a specified amount of time, the
device enters the automatic sleep mode. The system can
also place the device into the standby mode. Power consumption is greatly reduced in both these modes.
AMD’s Flash technology combined years of Flash memory
manufacturing experience to produce the highest levels of
quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via
Fowler-Nordheim tunneling. The data is programmed using
hot electron injection.
Am75PDL191CHH/Am75PDL193CHH
5
A D V A N C E
I N F O R M A T I O N
GENERAL DESCRIPTION (DL640)
The Am29DL640H is a 64 megabit, 3.0 volt-only flash
memory device, organized as 4,194,304 words of 16
bits each or 8,388,608 bytes of 8 bits each. Word
mode data appears on DQ15–DQ0; byte mode data
appears on DQ7–DQ0. The device is designed to be
programmed in-system with the standard 3.0 volt VCC
supply, and can also be programmed in standard
EPROM programmers.
Factory locked parts provide several options. The
SecSi Sector may store a secure, random 16 byte
ESN (Electronic Serial Number), customer code (programmed through AMD’s ExpressFlash service), or
both. Customer Lockable parts may utilize the SecSi
Sector as bonus space, reading and writing like any
other flash sector, or may permanently lock their own
code there.
The device is available with an access time of 70, 90,
or 120 ns and is offered in 48-pin TSOP, 63-ball
Fine-Pitch BGA, and 64-ball Fortified BGA packages.
Standard control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal
read and write operations, and avoid bus contention
issues.
DMS (Data Management Software) allows systems
to easily take advantage of the advanced architecture
of the simultaneous read/write product line by allowing
removal of EEPROM devices. DMS will also allow the
system software to be simplified, as it will perform all
functions necessary to modify data in file structures,
as opposed to single-byte modifications. To write or
update a particular piece of data (a phone number or
configuration data, for example), the user only needs
to state which piece of data is to be updated, and
where the updated data is located in the system. This
i s a n a d va n t a g e c o m p a r e d t o s ys te m s w h e r e
user-written software must keep track of the old data
location, status, logical to physical translation of the
data onto the Flash memory device (or memory devices), and more. Using DMS, user-written software
does not need to interface with the Flash memory directly. Instead, the user's software accesses the Flash
memory by calling one of only six functions. AMD provides this software to simplify system design and software integration efforts.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the
program and erase operations.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation by dividing the memory
space into four banks, two 8 Mb banks with small and
large sectors, and two 24 Mb banks of large sectors.
Sector addresses are fixed, system software can be
used to form user-defined bank groups.
During an Erase/Program operation, any of the three
non-busy banks may be read from. Note that only two
banks can operate simultaneously. The device can improve overall system performance by allowing a host
system to program or erase in one bank, then
immediately and simultaneously read from the other
bank, with zero latency. This releases the system from
waiting for the completion of program or erase
operations.
The Am29DL640H can be organized as both a top and
bottom boot sector configuration.
Bank
Megabits
Bank 1
8 Mb
Bank 2
Bank 3
24 Mb
24 Mb
Bank 4
8 Mb
Sector Sizes
Eight 8 Kbyte/4 Kword,
Fifteen 64 Kbyte/32 Kword
Forty-eight 64 Kbyte/32 Kword
Forty-eight 64 Kbyte/32 Kword
Eight 8 Kbyte/4 Kword,
Fifteen 64 Kbyte/32 Kword
Am29DL640H Features
The SecSi™ (Secured Silicon) Sector is an extra
256 byte sector capable of being permanently locked
by AMD or customers. The SecSi Customer Indicator Bit (DQ6) is permanently set to a 1 if the part has
been customer locked, permanently set to 0 if the part
has been factory locked, and is 0 if customer lockable. This way, customer lockable parts can never be
used to replace a factory locked part.
6
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard. Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device status bits: RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to the read mode.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
V CC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the
standby mode. Power consumption is greatly reduced in both modes.
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
Pseudo SRAM Memory
The pSRAM device is a 64 Mbit pseudo static random
access memory (PSRAM) organized as 4,194,304
words by 16 bits. The device operates a single power
supply. The device also features SRAM-like W/R timing whereby the device is controlled by CE1#, OE#,
and WE# on anynchronous. The device also supports
deep power-down mode, realizing low-power standby.
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
7
A D V A N C E
I N F O R M A T I O N
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . 11
MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . 12
Connection Diagram–PDL127 . . . . . . . . . . . . . . . 13
Special Package Handling Instructions .................................. 13
Connection Diagram–PDL129 . . . . . . . . . . . . . . . 14
Special Package Handling Instructions .................................. 14
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Ordering Information . . . . . . . . . . . . . . . . . . . . . . 16
Am29PDL127H/AM29PDL129H Device Bus Operations ....... 17
Table 1. Device Bus Operations ..................................................... 18
Requirements for Reading Array Data ................................... 19
Random Read (Non-Page Read) ........................................ 19
Page Mode Read ................................................................ 19
Table 2. Page Select .......................................................................19
Simultaneous Operation ......................................................... 19
Table 3. Bank Select (PDL129H) ....................................................19
Table 4. Bank Select (PDL127H) ....................................................19
Writing Commands/Command Sequences ............................ 20
Accelerated Program Operation .......................................... 20
Autoselect Functions ........................................................... 20
Standby Mode ........................................................................ 20
Automatic Sleep Mode ........................................................... 20
RESET#: Hardware Reset Pin ............................................... 21
Output Disable Mode .............................................................. 21
Table 5. SecSiTM Sector Addresses ................................................21
Table 6. Am29PDL127H Sector Architecture ..................................22
Table 7. Am29PDL129H Sector Architecture ..................................29
Table 8. Am29PDL127H Boot Sector/Sector Block Addresses for Protection/Unprotection ........................................................................37
Table 9. Am29PDL129H Boot Sector/Sector Block Addresses for Protection/Unprotection
CE#f1 Control ..................................................................................38
Table 10. Am29PDL129H Boot Sector/Sector Block Addresses for
Protection/Unprotection
CE#f2 Control ..................................................................................38
Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . 39
Persistent Sector Protection ................................................... 39
Persistent Protection Bit (PPB) ............................................ 39
Persistent Protection Bit Lock (PPB Lock) .......................... 39
Dynamic Protection Bit (DYB) ............................................. 39
Table 11. Sector Protection Schemes .............................................40
Persistent Sector Protection Mode Locking Bit ................... 40
Password Protection Mode ..................................................... 40
Password and Password Mode Locking Bit ........................ 41
64-bit Password ................................................................... 41
Write Protect (WP#) ................................................................ 41
Persistent Protection Bit Lock .............................................. 41
High Voltage Sector Protection .............................................. 42
Figure 1. In-System Sector Protection/
Sector Unprotection Algorithms ...................................................... 43
Temporary Sector Unprotect .................................................. 44
Figure 2. Temporary Sector Unprotect Operation........................... 44
SecSi™ (Secured Silicon) Sector
Flash Memory Region ............................................................ 44
Factory-Locked Area (64 words) ......................................... 44
Customer-Lockable Area (64 words) ................................... 44
Figure 3. SecSi Protection Algorithm .............................................. 45
8
SecSi Sector Protection Bits ................................................ 46
Hardware Data Protection ...................................................... 46
Low VCC Write Inhibit ......................................................... 46
Write Pulse “Glitch” Protection ............................................ 46
Logical Inhibit ....................................................................... 46
Power-Up Write Inhibit ......................................................... 46
Common Flash Memory Interface (CFI) . . . . . . . 46
Table 12. CFI Query Identification String ........................................ 47
System Interface String................................................................... 47
Table 14. Device Geometry Definition ............................................ 48
Table 15. Primary Vendor-Specific Extended Query ...................... 49
Command Definitions . . . . . . . . . . . . . . . . . . . . . 50
Reading Array Data ................................................................ 50
Reset Command ..................................................................... 50
Autoselect Command Sequence ............................................ 50
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence .............................................................. 51
Word Program Command Sequence ...................................... 51
Unlock Bypass Command Sequence .................................. 51
Figure 4. Program Operation ......................................................... 52
Chip Erase Command Sequence ........................................... 52
Sector Erase Command Sequence ........................................ 52
Figure 5. Erase Operation.............................................................. 53
Erase Suspend/Erase Resume Commands ........................... 53
Password Program Command ................................................ 53
Password Verify Command .................................................... 54
Password Protection Mode Locking Bit Program Command .. 54
Persistent Sector Protection Mode Locking Bit Program Command ....................................................................................... 54
SecSi Sector Protection Bit Program Command .................... 54
PPB Lock Bit Set Command ................................................... 54
DYB Write Command ............................................................. 54
Password Unlock Command .................................................. 55
PPB Program Command ........................................................ 55
All PPB Erase Command ........................................................ 55
DYB Write Command ............................................................. 55
PPB Lock Bit Set Command ................................................... 55
PPB Status Command ............................................................ 55
PPB Lock Bit Status Command .............................................. 55
Sector Protection Status Command ....................................... 55
Command Definitions Tables .................................................. 56
Table 16. Memory Array Command Definitions ............................. 56
Table 17. Sector Protection Command Definitions ........................ 57
Write Operation Status . . . . . . . . . . . . . . . . . . . . 58
DQ7: Data# Polling ................................................................. 58
Figure 6. Data# Polling Algorithm .................................................. 58
RY/BY#: Ready/Busy# ............................................................ 59
DQ6: Toggle Bit I .................................................................... 59
Figure 7. Toggle Bit Algorithm........................................................ 59
DQ2: Toggle Bit II ................................................................... 60
Reading Toggle Bits DQ6/DQ2 ............................................... 60
DQ5: Exceeded Timing Limits ................................................ 60
DQ3: Sector Erase Timer ....................................................... 60
Table 18. Write Operation Status ................................................... 61
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 62
Figure 8. Maximum Negative Overshoot Waveform ...................... 62
Figure 9. Maximum Positive Overshoot Waveform........................ 62
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
ESD Immunity . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 64
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Figure 10. Test Setup..................................................................... 65
Figure 11. Input Waveforms and Measurement Levels .................. 65
pSRAM AC Characteristics . . . . . . . . . . . . . . . . . 66
CE#1ps Timing ....................................................................... 66
Figure 12. Timing Diagram for Alternating
Between Pseudo SRAM and Flash................................................. 66
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 67
Read-Only Operations – Am29PDL127H ............................... 67
Read-Only Operations – Am29PDL129H ............................... 67
Figure 13. Read Operation Timings ................................................ 68
Figure 14. Page Read Operation Timings....................................... 68
Hardware Reset (RESET#) .................................................... 69
Figure 15. Reset Timings ................................................................ 69
Erase and Program Operations .............................................. 70
Figure 16. Program Operation Timings........................................... 71
Figure 17. Accelerated Program Timing Diagram........................... 71
Figure 18. Chip/Sector Erase Operation Timings ........................... 72
Figure 19. Back-to-back Read/Write Cycle Timings ....................... 73
Figure 20. Data# Polling Timings (During Embedded Algorithms).. 73
Figure 21. Toggle Bit Timings (During Embedded Algorithms)....... 74
Figure 22. DQ2 vs. DQ6.................................................................. 74
Temporary Sector Unprotect .................................................. 75
Figure 23. Temporary Sector Unprotect Timing Diagram ............... 75
Figure 24. Sector/Sector Block Protect and
Unprotect Timing Diagram .............................................................. 76
Alternate CE# Controlled Erase and Program Operations ..... 77
Figure 25. Flash Alternate CE# Controlled Write (Erase/Program)
Operation Timings........................................................................... 78
Erase And Programming Performance . . . . . . . . 79
Latchup Characteristics . . . . . . . . . . . . . . . . . . . 79
Package Pin Capacitance . . . . . . . . . . . . . . . . . . 79
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 79
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 80
Table 1. Am29DL640H Device Bus Operations ..............................80
Word/Byte Configuration ........................................................ 80
Requirements for Reading Array Data ................................... 80
Writing Commands/Command Sequences ............................ 81
Accelerated Program Operation .......................................... 81
Autoselect Functions ........................................................... 81
Simultaneous Read/Write Operations with Zero Latency ....... 81
Standby Mode ........................................................................ 81
Automatic Sleep Mode ........................................................... 81
RESET#: Hardware Reset Pin ............................................... 82
Output Disable Mode .............................................................. 82
Flash Memory Region ............................................................. 90
Figure 3. SecSi Sector Protect Verify............................................. 91
Hardware Data Protection ...................................................... 91
Low VCC Write Inhibit ......................................................... 91
Write Pulse “Glitch” Protection ............................................ 91
Logical Inhibit ....................................................................... 91
Power-Up Write Inhibit ......................................................... 91
Common Flash Memory Interface (CFI) . . . . . . . 91
Table 7. CFI Query Identification String .......................................... 92
System Interface String................................................................... 92
Table 9. Device Geometry Definition .............................................. 93
Table 10. Primary Vendor-Specific Extended Query ...................... 94
Command Definitions . . . . . . . . . . . . . . . . . . . . . 95
Reading Array Data ................................................................ 95
Reset Command ..................................................................... 95
Autoselect Command Sequence ............................................ 95
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence .............................................................. 95
Word Program Command Sequence ...................................... 96
Unlock Bypass Command Sequence .................................. 96
Figure 4. Program Operation ......................................................... 97
Chip Erase Command Sequence ........................................... 97
Sector Erase Command Sequence ........................................ 97
Figure 5. Erase Operation.............................................................. 98
Erase Suspend/Erase Resume Commands ........................... 98
Table 11. Am29DL640H Command Definitions .............................. 99
Write Operation Status . . . . . . . . . . . . . . . . . . . 100
DQ7: Data# Polling ............................................................... 100
Figure 6. Data# Polling Algorithm ................................................ 100
RY/BY#: Ready/Busy# .......................................................... 101
DQ6: Toggle Bit I .................................................................. 101
Figure 7. Toggle Bit Algorithm...................................................... 101
DQ2: Toggle Bit II ................................................................. 102
Reading Toggle Bits DQ6/DQ2 ............................................. 102
DQ5: Exceeded Timing Limits .............................................. 102
DQ3: Sector Erase Timer ..................................................... 102
Table 12. Write Operation Status ................................................. 103
Absolute Maximum Ratings . . . . . . . . . . . . . . . 104
Figure 8. Maximum Negative Overshoot Waveform .................... 104
Figure 9. Maximum Positive Overshoot Waveform...................... 104
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . 105
Figure 10. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents) ........................................................... 106
Figure 11. Typical ICC1 vs. Frequency .......................................... 106
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . 107
Figure 12. Test Setup.................................................................. 107
Figure 13. Input Waveforms and Measurement Levels ............... 107
Table 2. Am29DL640H Sector Architecture ....................................82
Table 3. Bank Address ....................................................................85
SecSiTM Sector Addresses.............................................................. 85
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . 108
Read-Only Operations ......................................................... 108
Autoselect Mode ..................................................................... 85
Sector/Sector Block Protection and Unprotection .................. 87
Hardware Reset (RESET#) .................................................. 109
Table 5. Am29DL640H Boot Sector/Sector Block Addresses for Protection/Unprotection ........................................................................87
Erase and Program Operations ............................................ 110
Write Protect (WP#) ................................................................ 87
Table 6. WP#/ACC Modes ..............................................................88
Temporary Sector Unprotect .................................................. 88
Figure 1. Temporary Sector Unprotect Operation........................... 88
Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 89
SecSi™ (Secured Silicon) Sector
February 5, 2004
Figure 14. Read Operation Timings ............................................. 108
Figure 15. Reset Timings ............................................................. 109
Figure 16. Program Operation Timings........................................ 111
Figure 17. Accelerated Program Timing Diagram........................ 111
Figure 18. Chip/Sector Erase Operation Timings ........................ 112
Figure 19. Back-to-back Read/Write Cycle Timings .................... 113
Figure 20. Data# Polling Timings (During Embedded Algorithms) 113
Figure 21. Toggle Bit Timings (During Embedded Algorithms).... 114
Figure 22. DQ2 vs. DQ6............................................................... 114
Am75PDL191CHH/Am75PDL193CHH
9
A D V A N C E
I N F O R M A T I O N
Temporary Sector Unprotect ................................................ 115
Figure 23. Temporary Sector Unprotect Timing Diagram ............. 115
Figure 24. Sector/Sector Block Protect and
Unprotect Timing Diagram ............................................................ 116
Alternate CE# Controlled Erase and Program Operations ... 117
Figure 25. Alternate CE# Controlled Write (Erase/Program)
Operation Timings......................................................................... 118
Erase And Programming Performance . . . . . . . 119
Latchup Characteristics . . . . . . . . . . . . . . . . . . 119
PSRAM AC Characteristics . . . . . . . . . . . . . . . . 120
CE#s Timing ......................................................................... 120
Figure 26. Timing Diagram for Alternating
Between Pseudo SRAM to Flash.................................................. 120
Figure 27. Timing Waveform of Power-up .................................... 120
pSRAM AC CHaracteristics . . . . . . . . . . . . . . . . 121
Functional Description .......................................................... 121
10
Absolute Maximum Ratings .................................................. 121
DC Recommended Operating Conditions (Ta = -25oC to 85oC)
121
DC Characteristics (Ta = -25oC to 85oC, VDD = 2.6 to 3.3 V) ..
122
Capacitance (Ta = -25oC, f = 1 MHz) .................................. 122
AC Characteristics and Operating Conditions ...................... 123
AC Test Conditions ............................................................... 124
Timing Diagrams ................................................................... 125
Page Read Cycle (8 words access) ...................................... 125
Write Cycle 1 ........................................................................ 126
Write Cycle 2 ........................................................................ 126
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . 128
FMB073—73-Ball Fine-Pitch Grid Array 9 x 12 mm ............. 128
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . 129
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
PRODUCT SELECTOR GUIDE
Part Number
Am29PDL129H
VCC, VIO = 2.7–3.3 V
Speed Option
Max Access Time, ns (tACC)
70
70
Max CE# Access, ns (tCE)
Max Page Access, ns (tPACC)
30
Max OE# Access, ns (tOE)
Part Number
Am29DL640H
Standard Voltage Range: VCC = 2.7–3.3 V
Speed Option
70
Max Access Time (ns), tACC
70
CE# Access (ns), tCE
70
OE# Access (ns), tOE
30
Part Number
Speed Option
pSRAM
Standard Voltage Range: VCC = 2.7–3.3 V
Max Access Time, ns (tACC)
pSRAM
February 5, 2004
70
70
Max CE# Access, ns (tCE)
Max OE# Access, ns (tOE)
25
Page Access, ns (tAA)
30
Am75PDL191CHH/Am75PDL193CHH
11
A D V A N C E
I N F O R M A T I O N
MCP BLOCK DIAGRAM
VCC
A0 to A21
(A22 PDL127 Only)
VSS
A0 to A21 (A22)
Am29PDL127H
or
Am29PDL129H
VIO = VCC
CE#f1
CE#f2
VCC
DQ0 to DQ15
DQ0 to DQ15
VSS
A0 to A21
Am29DL640G
WP#/ACC
OE#
CE#f3
WE#
RESET#
DQ0 to DQ15
VSS VSSA
A0 to A21
CE#1ps
CE2ps
64 Mb
pSRAM
VCC = VCCQ
DQ0 to DQ15
UB#
LB#
VCC VSSQ
12
Am75PDL191CHH/Am75PDL193CHH
VCCps
February 5, 2004
A D V A N C E
I N F O R M A T I O N
CONNECTION DIAGRAM–PDL127
73-Ball FBGA
Top View
A1
A10
NC
NC
B1
B5
B6
B10
NC
CE#f3
NC
NC
C5
C3
C4
C6
C7
C8
NC
A7
LB# WP#/ACC WE#
A8
A11
D2
D3
D4
D7
D8
D9
A3
A6
UB#
A19
A12
A15
E2
E3
E4
E5
E6
E7
E8
E9
A2
A5
A18
RY/BY#
A20
A9
A13
A21
F1
F2
F3
F4
F7
F8
F9
F10
NC
A1
A4
A17
A10
A14
A22
NC
G1
G2
G3
G4
G7
G8
G9
G10
NC
A0
VSS
DQ1
DQ6
NC
A16
NC
H2
H3
H4
H5
H6
H7
H8
H9
CE#f1
OE#
DQ9
DQ3
DQ4
DQ13
DQ15
NC
J2
J3
J4
J5
J6
J7
J8
J9
CE#1ps
DQ0
DQ10
VCCf
VCCps
DQ12
DQ7
VSS
K3
K4
K5
K6
K7
K8
DQ8
DQ2
DQ11
NC
DQ5
DQ14
L1
L5
L6
L10
NC
NC
NC
NC
D6
RESET# CE2ps
PDL127H Only
M1
M10
NC
NC
Special Package Handling Instructions
Special handling is required for Flash Memory products
in molded packages (BGA). The package and/or data
integrity may be compromised if the package body is
February 5, 2004
Pseudo
SRAM Only
Flash Shared Only
C1
D5
DL640G Only
exposed to temperatures above 150°C for prolonged
periods of time.
Am75PDL191CHH/Am75PDL193CHH
13
A D V A N C E
I N F O R M A T I O N
CONNECTION DIAGRAM–PDL129
73-Ball FBGA
Top View
A1
A10
NC
NC
B1
B5
B6
B10
NC
CE#f3
NC
NC
C5
C3
C4
C6
C7
C8
NC
A7
LB# WP#/ACC WE#
A8
A11
D2
D3
D4
D7
D8
D9
A3
A6
UB#
A19
A12
A15
E2
E3
E4
E5
E6
E7
E8
E9
A2
A5
A18
RY/BY#
A20
A9
A13
A21
F1
F2
F3
F4
F7
F8
F9
F10
NC
A1
A4
A17
A10
A14
CE#f2
NC
G1
G2
G3
G4
G7
G8
G9
G10
NC
A0
VSS
DQ1
DQ6
NC
A16
NC
H2
H3
H4
H5
H6
H7
H8
H9
CE#f1
OE#
DQ9
DQ3
DQ4
DQ13
DQ15
NC
J2
J3
J4
J5
J6
J7
J8
J9
CE#1ps
DQ0
DQ10
VCCf
VCCps
DQ12
DQ7
VSS
K3
K4
K5
K6
K7
K8
DQ8
DQ2
DQ11
NC
DQ5
DQ14
L1
L5
L6
L10
NC
NC
NC
NC
D6
RESET# CE2ps
M10
NC
NC
Special handling is required for Flash Memory products
in molded packages (BGA). The package and/or data
14
PDL129 Only
M1
Special Package Handling Instructions
Pseudo
SRAM Only
Flash Shared Only
C1
D5
DL640G Only
integrity may be compromised if the package body is
exposed to temperatures above 150°C for prolonged
periods of time.
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
PIN DESCRIPTION
A21–A0
= 22 Address Inputs (Common)
A22
= Address Input (PDL127 only)
(Flash)
DQ15–DQ0
= 16 Data Inputs/Outputs (Common)
CE#f1
= Chip Enable 1 (Flash) (PDL 127
only)
CE#f1, CE#f2 = Chip Enable Inputs. CE#f1 controls
the 64 Mb in Banks 1A and 1B.
CE#f2 controls the 64 Mb in Banks
2A and 2B.
CE#1ps
= Chip Enable 1 (pSRAM) (PDL129
only)
CE2ps
= Chip Enable 2 (pSRAM)
OE#
= Output Enable (Common)
WE#
= Write Enable (Common)
RY/BY#
= Ready/Busy Output and open drain.
When RY/BY# = VIH, the device is
ready to accept read operations and
commands. When RY/BY# = VOL,
the device is either executing an embedded algorithm or the device is
executing a hardware reset operation.
WP/ACC#= 12V, program and erase
operations are accelerated.
VCCf
= Flash 3.0 volt-only single power supply (see Product Selector Guide for
speed options and voltage supply
tolerances)
VCCs
= pSRAM Power Supply
VSS
= Device Ground (Common)
NC
= Pin Not Connected Internally
LOGIC SYMBOL
22
A21–A0
A22 (PDL127 Only)
DQ15–DQ0
CE#f2 (PDL129 Only)
CE#1ps
CE2ps
RY/BY#
OE#
WE#
UB#s
= Upper Byte Control (pSRAM)
WP#/ACC
LB#s
= Lower Byte Control (pSRAM)
RESET#
RESET#
= Hardware Reset Pin, Active Low
UB#s
WP#/ACC
= Write Protect/Acceleration Input.
When WP/ACC#= VIL, the highest
and lowest two 4K-word sectors are
write protected regardless of other
sector protection configurations.
When WP/ACC#= VIH, these sector
are unprotected unless the DYB or
PPB is programmed. When
February 5, 2004
16
CE#f1
LB#s
Am75PDL191CHH/Am75PDL193CHH
15
A D V A N C E
I N F O R M A T I O N
ORDERING INFORMATION
The order number (Valid Combination) is formed by the following:
Am75PDL19
1
C
H
H
70
N
TEMPERATURE RANGE
N
= Light Industrial (–25°C to +85°C)
SPEED OPTION
See “Product Selector Guide” on page 5.
PROCESS TECHNOLOGY OF AM29DL640
H
= 0.13 µm
PROCESS TECHNOLOGY OF AM29PDL127/129
H
= 0.13 µm
PSEUDO SRAM DEVICE DENSITY
C
=
64 Mbits
CONTROL PINS
1
=
1 CE Flash
3
=
2 CE Flash
AMD DEVICE NUMBER/DESCRIPTION
Am75PDL191CHH/Am75PDL193CHH
Am29PDL127H/129H–128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
Operation Flash Memory, One Chip Enable Input on Am29PDL127H, Dual Chip Enable
Inputs on Am29PDL129H
Am29DL640H–64 Megabit (4M x 16-Bit) CMOS Flash Memory
64 Mb pSRAM
Valid Combinations
Valid Combinations for BGA Packages
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
16
Order Number
Package Marking
VIO Range
Am75PDL191CHH70I
M750000008
2.7–3.3 V
Am75PDL193CHH70I
M750000009
2.7–3.3 V
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
Am29PDL127H/AM29PDL129H Device Bus Operations
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information
needed to execute the command. The contents of the
February 5, 2004
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Tables 1-2 lists the device bus operations, the
inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Am75PDL191CHH/Am75PDL193CHH
17
A D V A N C E
Table 1.
Write to Active
Flash
Device Bus Operations
CE#f2
CE#f1
(PDL129 CE#1ps CE2ps OE# WE#
Active
only)
Operation
(Notes 1, 2)
Read from
Active Flash
I N F O R M A T I O N
(Note 7)
(Note 8)
(Note 7)
(Note 8)
L (H)
H (L)
L (H)
H (L)
H
H
H
L
H
H
H
L
Addr.
LB#s UB#s
WP#/
(Note (Note RESET#
ACC
3)
3)
(Note 4)
DQ7–
DQ0
DQ15–
DQ8
L
H
AIN
X
X
H
L/H
DOUT
DOUT
H
L
AIN
X
X
H
(Note 4)
DIN
DIN
Standby
VCC ± 0.3 V
H
H
X
X
X
X
X
VCC ±
0.3 V
H
High-Z
High-Z
Deep Power-down
Standby
VCC ± 0.3 V
H
L
X
X
X
X
X
VCC ±
0.3 V
H
High-Z
High-Z
L
H
H
H
X
X
X
H
H
X
X
X
H
L/H
High-Z
High-Z
X
X
X
X
X
L
L/H
High-Z
High-Z
L
SADD,
A6 = L,
A1 = H,
A0 = L
X
X
VID
L/H
DIN
X
H
L
SADD,
A6 = H,
A1 = H,
A0 = L
X
X
VID
(Note 6)
DIN
X
X
X
X
X
X
VID
(Note 6)
DIN
High-Z
L
L
DOUT
DOUT
L
H
AIN
H
L
H
X
High-Z
DOUT
L
H
DOUT
High-Z
L
L
DIN
DIN
H
L
High-Z
DIN
L
H
DIN
High-Z
Output Disable (Note 9)
L (H)
Flash Hardware (Note 7)
Reset
(Note 8)
H (L)
X
(Note 7)
Sector Protect
(Notes 6, 10)
Sector
Unprotect
(Notes 5, 9)
Temporary
Sector
Unprotect
(Note 9)
H (L)
(Note 7)
(Note 8)
L (H)
H (L)
(Note 7)
X
(Note 8)
Read from pSRAM
Write to pSRAM
L (H)
H
H
H
H
H
H
H
L
H
H
H
L
H
H
H
L
H
H
H
L
L
H
L
H
H
X
L
AIN
H
X
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SADD = Flash Sector Address, AIN =
Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Other operations except for those indicated in this column are
inhibited.
2. Do not apply CE#f1 or 2 = VIL, CE#1ps = VIL and CE2ps = VIH at
the same time.
3. Don’t care or open LB#s or UB#s.
4. If WP#/ACC = VIL, the boot sectors will be protected. If WP#/ACC
= VIH the boot sectors protection will be removed.
If WP#/ACC = VACC (9V), the program time will be reduced by
40%.
6. If WP#/ACC = VIL, the two outermost boot sectors remain
protected. If WP#/ACC = VIH, the two outermost boot sector
protection depends on whether they were last protected or
unprotected using the method described in “Sector/Sector Block
Protection and Unprotection”. If WP#/ACC = VHH, all sectors will
be unprotected.
7. Data will be retained in pSRAM.
8. Data will be lost in pSRAM.
9.
Both CE#f1 inputs may be held low for this operation.
5. The sector protect and sector unprotect functions may also be
implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
18
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the OE# and appropriate CE#f1/CE#f2 (PDL129
only) pins to VIL. CE#f1 and CE#f2 are the power control and for PDL129 select the lower (CE#f1) or upper
(CE#f2) halves of the device. OE# is the output control
and gates array data to the output pins. WE# should
remain at VIH.
page mode accesses are obtained by keeping
A22–A3 (A21–A3 for PDL129) constant and changing
A2 to A0 to select the specific word within that page.
Table 2.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. Each bank remains
enabled for read access until the command register
contents are altered.
Refer to the AC Characteristics table for timing specifications and to Figure 13 for the timing diagram. ICC1 in
the DC Characteristics table represents the active current specification for reading array data.
Random Read (Non-Page Read)
Address access time (tACC) is equal to the delay from
stable addresses to valid output data. The chip enable
access time (t CE ) is the delay from the stable addresses and stable CE#f1 to valid data at the output
inputs. The output enable access time is the delay
from the falling edge of the OE# to valid data at the
output inputs (assuming the addresses have been stable for at least tACC–tOE time).
A2
A1
A0
Word 0
0
0
0
Word 1
0
0
1
Word 2
0
1
0
Word 3
0
1
1
Word 4
1
0
0
Word 5
1
0
1
Word 6
1
1
0
Word 7
1
1
1
In addition to the conventional features (read, program, erase-suspend read, and erase-suspend program), the device is capable of reading data from one
bank of memory while a program or erase operation is
in progress in another bank of memory (simultaneous
operation), The bank can be selected by bank addresses (A22–A20) (A21–A20 for PDL129) with zero
latency.
The simultaneous operation can execute multi-function mode in the same bank.
Table 3.
The random or initial page access is tACC or tCE and
subsequent page read accesses (as long as the locations specified by the microprocessor fall within that
page) are t PACC. When CE#f1 and CE#f2 (PDL129
only) are deasserted (CE#f1=CE#f2=VIH), the reassertion of CE#f1 or CE#f2 (PDL129 only) for subsequent
access has access time of t ACC or t CE . Here again,
CE#f1/CE#f2 (PDL129 only) selects the device and
OE# is the output control and should be used to gate
data to the output inputs if the device is selected. Fast
February 5, 2004
Word
Simultaneous Operation
Page Mode Read
The device is capable of fast page mode read and is
compatible with the page mode Mask ROM read operation. This mode provides faster read access speed
for random locations within a page. Address bits
A22–A3 (A21–A3 for PDL129) select an 8-word page,
and address bits A2–A0 select a specific word within
that page. This is an asynchronous operation with the
microprocessor supplying the specific word location.
Page Select
Bank Select (PDL129H)
Bank
CE#f1
CE#f2
A21–A20
Bank 1A
0
1
00, 01, 10
Bank 1B
0
1
11
Bank 2A
1
0
00
Bank 2B
1
0
01, 10, 11
Table 4.
Bank Select (PDL127H)
Bank
A22–A20
Bank A
000
Bank B
001, 010, 011
Bank C
100, 101, 110
Bank D
111
Am75PDL191CHH/Am75PDL193CHH
19
A D V A N C E
I N F O R M A T I O N
Writing Commands/Command Sequences
Autoselect Functions
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE#f1 or CE#f2 (PDL 129 only) to VIL, and OE# to VIH.
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ15–DQ0. Standard read cycle timings apply in
this mode. Refer to the Autoselect Command Sequence sections for more information.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required
to program a word, instead of four. The “Word Program Command Sequence” section has details on
programming data to the device using both standard
and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 4 indicates the address
space that each sector occupies. A “bank address” is
the address bits required to uniquely select a bank.
Similarly, a “sector address” refers to the address bits
required to uniquely select a sector. The “Command
Definitions” section has details on erasing a sector or
the entire chip, or suspending/resuming the erase operation.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The AC
Characteristics section contains timing specification
tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This function is primarily intended to allow faster manufacturing throughput at the
factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to normal operation. Note that VHH must not be asserted on
WP#/ACC for operations other than accelerated programming, or device damage may result. In addition,
the WP#/ACC pin should be raised to VCC when not in
use. That is, the WP#/ACC pin should not be left floating or unconnected; inconsistent behavior of the device may result.
20
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE#f1, CE#f2 (PDL129 only) and RESET# pins are all
held at VIO ± 0.3 V. (Note that this is a more restricted
voltage range than V IH .) If CE#f1, CE#f2 (PDL129
only), and RESET# are held at VIH, but not within VCC
± 0.3 V, the device will be in the standby mode, but the
standby current will be greater. The device requires
standard access time (tCE) for read access when the
device is in either of these standby modes, before it is
ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
I CC3 in the DC Characteristics table represents the
CMOS standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for t ACC +
150 ns. The automatic sleep mode is independent of
the CE#f1/CE#f2 (PDL129 only), WE#, and OE# control signals. Standard address access timings provide
new data when addresses are changed. While in
sleep mode, output data is latched and always available to the system. Note that during automatic sleep
mode, OE# must be at VIH before the device reduces
current to the stated sleep mode specification. ICC5 in
the DC Characteristics table represents the automatic
sleep mode current specification.
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS±0.3 V, the standby current will
be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the
February 5, 2004
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH.
Refer to the pSRAM AC Characteristics tables for RESET# parameters and to Figure 15 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins (except for RY/BY#) are
placed in the highest Impedance state
Table 5.
SecSiTM Sector Addresses
Am29PDL127H/
Am29PDL129H
Sector Size
Address Range
128 words
000000h–00007Fh
Factory-Locked Area
64 words
000000h-00003Fh
Customer-Lockable Area
64 words
000040h-00007Fh
Am75PDL191CHH/Am75PDL193CHH
21
A D V A N C E
Table 6.
Bank A
Bank
22
I N F O R M A T I O N
Am29PDL127H Sector Architecture
Sector
Sector Address (A22-A12)
Sector Size (Kwords)
Address Range (x16)
SA0
00000000000
4
000000h–000FFFh
SA1
00000000001
4
001000h–001FFFh
SA2
00000000010
4
002000h–002FFFh
SA3
00000000011
4
003000h–003FFFh
SA4
00000000100
4
004000h–004FFFh
SA5
00000000101
4
005000h–005FFFh
SA6
00000000110
4
006000h–006FFFh
SA7
00000000111
4
007000h–007FFFh
SA8
00000001XXX
32
008000h–00FFFFh
SA9
00000010XXX
32
010000h–017FFFh
SA10
00000011XXX
32
018000h–01FFFFh
SA11
00000100XXX
32
020000h–027FFFh
SA12
00000101XXX
32
028000h–02FFFFh
SA13
00000110XXX
32
030000h–037FFFh
SA14
00000111XXX
32
038000h–03FFFFh
SA15
00001000XXX
32
040000h–047FFFh
SA16
00001001XXX
32
048000h–04FFFFh
SA17
00001010XXX
32
050000h–057FFFh
SA18
00001011XXX
32
058000h–05FFFFh
SA19
00001100XXX
32
060000h–067FFFh
SA20
00001101XXX
32
068000h–06FFFFh
SA21
00001110XXX
32
070000h–077FFFh
SA22
00001111XXX
32
078000h–07FFFFh
SA23
00010000XXX
32
080000h–087FFFh
SA24
00010001XXX
32
088000h–08FFFFh
SA25
00010010XXX
32
090000h–097FFFh
SA26
00010011XXX
32
098000h–09FFFFh
SA27
00010100XXX
32
0A0000h–0A7FFFh
SA28
00010101XXX
32
0A8000h–0AFFFFh
SA29
00010110XXX
32
0B0000h–0B7FFFh
SA30
00010111XXX
32
0B8000h–0BFFFFh
SA31
00011000XXX
32
0C0000h–0C7FFFh
SA32
00011001XXX
32
0C8000h–0CFFFFh
SA33
00011010XXX
32
0D0000h–0D7FFFh
SA34
00011011XXX
32
0D8000h–0DFFFFh
SA35
00011100XXX
32
0E0000h–0E7FFFh
SA36
00011101XXX
32
0E8000h–0EFFFFh
SA37
00011110XXX
32
0F0000h–0F7FFFh
SA38
00011111XXX
32
0F8000h–0FFFFFh
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
Table 6.
Bank B
Bank
February 5, 2004
I N F O R M A T I O N
Am29PDL127H Sector Architecture (Continued)
Sector
Sector Address (A22-A12)
Sector Size (Kwords)
Address Range (x16)
SA39
00100000XXX
32
100000h–107FFFh
SA40
00100001XXX
32
108000h–10FFFFh
SA41
00100010XXX
32
110000h–117FFFh
SA42
00100011XXX
32
118000h–11FFFFh
SA43
00100100XXX
32
120000h–127FFFh
SA44
00100101XXX
32
128000h–12FFFFh
SA45
00100110XXX
32
130000h–137FFFh
SA46
00100111XXX
32
138000h–13FFFFh
SA47
00101000XXX
32
140000h–147FFFh
SA48
00101001XXX
32
148000h–14FFFFh
SA49
00101010XXX
32
150000h–157FFFh
SA50
00101011XXX
32
158000h–15FFFFh
SA51
00101100XXX
32
160000h–167FFFh
SA52
00101101XXX
32
168000h–16FFFFh
SA53
00101110XXX
32
170000h–177FFFh
SA54
00101111XXX
32
178000h–17FFFFh
SA55
00110000XXX
32
180000h–187FFFh
SA56
00110001XXX
32
188000h–18FFFFh
SA57
00110010XXX
32
190000h–197FFFh
SA58
00110011XXX
32
198000h–19FFFFh
SA59
00110100XXX
32
1A0000h–1A7FFFh
SA60
00110101XXX
32
1A8000h–1AFFFFh
SA61
00110110XXX
32
1B0000h–1B7FFFh
SA62
00110111XXX
32
1B8000h–1BFFFFh
SA63
00111000XXX
32
1C0000h–1C7FFFh
SA64
00111001XXX
32
1C8000h–1CFFFFh
SA65
00111010XXX
32
1D0000h–1D7FFFh
SA66
00111011XXX
32
1D8000h–1DFFFFh
SA67
00111100XXX
32
1E0000h–1E7FFFh
SA68
00111101XXX
32
1E8000h–1EFFFFh
SA69
00111110XXX
32
1F0000h–1F7FFFh
SA70
00111111XXX
32
1F8000h–1FFFFFh
SA71
01000000XXX
32
200000h–207FFFh
SA72
01000001XXX
32
208000h–20FFFFh
SA73
01000010XXX
32
210000h–217FFFh
SA74
01000011XXX
32
218000h–21FFFFh
SA75
01000100XXX
32
220000h–227FFFh
SA76
01000101XXX
32
228000h–22FFFFh
SA77
01000110XXX
32
230000h–237FFFh
SA78
01000111XXX
32
238000h–23FFFFh
Am75PDL191CHH/Am75PDL193CHH
23
A D V A N C E
Table 6.
Bank B
Bank
24
I N F O R M A T I O N
Am29PDL127H Sector Architecture (Continued)
Sector
Sector Address (A22-A12)
Sector Size (Kwords)
Address Range (x16)
SA79
01001000XXX
32
240000h–247FFFh
SA80
01001001XXX
32
248000h–24FFFFh
SA81
01001010XXX
32
250000h–257FFFh
SA82
01001011XXX
32
258000h–25FFFFh
SA83
01001100XXX
32
260000h–267FFFh
SA84
01001101XXX
32
268000h–26FFFFh
SA85
01001110XXX
32
270000h–277FFFh
SA86
01001111XXX
32
278000h–27FFFFh
SA87
01010000XXX
32
280000h–287FFFh
SA88
01010001XXX
32
288000h–28FFFFh
SA89
01010010XXX
32
290000h–297FFFh
SA90
01010011XXX
32
298000h–29FFFFh
SA91
01010100XXX
32
2A0000h–2A7FFFh
SA92
01010101XXX
32
2A8000h–2AFFFFh
SA93
01010110XXX
32
2B0000h–2B7FFFh
SA94
01010111XXX
32
2B8000h–2BFFFFh
SA95
01011000XXX
32
2C0000h–2C7FFFh
SA96
01011001XXX
32
2C8000h–2CFFFFh
SA97
01011010XXX
32
2D0000h–2D7FFFh
SA98
01011011XXX
32
2D8000h–2DFFFFh
SA99
01011100XXX
32
2E0000h–2E7FFFh
SA100
01011101XXX
32
2E8000h–2EFFFFh
SA101
01011110XXX
32
2F0000h–2F7FFFh
SA102
01011111XXX
32
2F8000h–2FFFFFh
SA103
01100000XXX
32
300000h–307FFFh
SA104
01100001XXX
32
308000h–30FFFFh
SA105
01100010XXX
32
310000h–317FFFh
SA106
01100011XXX
32
318000h–31FFFFh
SA107
01100100XXX
32
320000h–327FFFh
SA108
01100101XXX
32
328000h–32FFFFh
SA109
01100110XXX
32
330000h–337FFFh
SA110
01100111XXX
32
338000h–33FFFFh
SA111
01101000XXX
32
340000h–347FFFh
SA112
01101001XXX
32
348000h–34FFFFh
SA113
01101010XXX
32
350000h–357FFFh
SA114
01101011XXX
32
358000h–35FFFFh
SA115
01101100XXX
32
360000h–367FFFh
SA116
01101101XXX
32
368000h–36FFFFh
SA117
01101110XXX
32
370000h–377FFFh
SA118
01101111XXX
32
378000h–37FFFFh
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
Table 6.
Bank C
Bank B
Bank
February 5, 2004
I N F O R M A T I O N
Am29PDL127H Sector Architecture (Continued)
Sector
Sector Address (A22-A12)
Sector Size (Kwords)
Address Range (x16)
SA119
01110000XXX
32
380000h–387FFFh
SA120
01110001XXX
32
388000h–38FFFFh
SA121
01110010XXX
32
390000h–397FFFh
SA122
01110011XXX
32
398000h–39FFFFh
SA123
01110100XXX
32
3A0000h–3A7FFFh
SA124
01110101XXX
32
3A8000h–3AFFFFh
SA125
01110110XXX
32
3B0000h–3B7FFFh
SA126
01110111XXX
32
3B8000h–3BFFFFh
SA127
01111000XXX
32
3C0000h–3C7FFFh
SA128
01111001XXX
32
3C8000h–3CFFFFh
SA129
01111010XXX
32
3D0000h–3D7FFFh
SA130
01111011XXX
32
3D8000h–3DFFFFh
SA131
01111100XXX
32
3E0000h–3E7FFFh
SA132
01111101XXX
32
3E8000h–3EFFFFh
SA133
01111110XXX
32
3F0000h–3F7FFFh
SA134
01111111XXX
32
3F8000h–3FFFFFh
SA135
10000000XXX
32
400000h–407FFFh
SA136
10000001XXX
32
408000h–40FFFFh
SA137
10000010XXX
32
410000h–417FFFh
SA138
10000011XXX
32
418000h–41FFFFh
SA139
10000100XXX
32
420000h–427FFFh
SA140
10000101XXX
32
428000h–42FFFFh
SA141
10000110XXX
32
430000h–437FFFh
SA142
10000111XXX
32
438000h–43FFFFh
SA143
10001000XXX
32
440000h–447FFFh
SA144
10001001XXX
32
448000h–44FFFFh
SA145
10001010XXX
32
450000h–457FFFh
SA146
10001011XXX
32
458000h–45FFFFh
SA147
10001100XXX
32
460000h–467FFFh
SA148
10001101XXX
32
468000h–46FFFFh
SA149
10001110XXX
32
470000h–477FFFh
SA150
10001111XXX
32
478000h–47FFFFh
SA151
10010000XXX
32
480000h–487FFFh
SA152
10010001XXX
32
488000h–48FFFFh
SA153
10010010XXX
32
490000h–497FFFh
SA154
10010011XXX
32
498000h–49FFFFh
SA155
10010100XXX
32
4A0000h–4A7FFFh
SA156
10010101XXX
32
4A8000h–4AFFFFh
SA157
10010110XXX
32
4B0000h–4B7FFFh
SA158
10010111XXX
32
4B8000h–4BFFFFh
Am75PDL191CHH/Am75PDL193CHH
25
A D V A N C E
Table 6.
Bank C
Bank
26
I N F O R M A T I O N
Am29PDL127H Sector Architecture (Continued)
Sector
Sector Address (A22-A12)
Sector Size (Kwords)
Address Range (x16)
SA159
10011000XXX
32
4C0000h–4C7FFFh
SA160
10011001XXX
32
4C8000h–4CFFFFh
SA161
10011010XXX
32
4D0000h–4D7FFFh
SA162
10011011XXX
32
4D8000h–4DFFFFh
SA163
10011100XXX
32
4E0000h–4E7FFFh
SA164
10011101XXX
32
4E8000h–4EFFFFh
SA165
10011110XXX
32
4F0000h–4F7FFFh
SA166
10011111XXX
32
4F8000h–4FFFFFh
SA167
10100000XXX
32
500000h–507FFFh
SA168
10100001XXX
32
508000h–50FFFFh
SA169
10100010XXX
32
510000h–517FFFh
SA170
10100011XXX
32
518000h–51FFFFh
SA171
10100100XXX
32
520000h–527FFFh
SA172
10100101XXX
32
528000h–52FFFFh
SA173
10100110XXX
32
530000h–537FFFh
SA174
10100111XXX
32
538000h–53FFFFh
SA175
10101000XXX
32
540000h–547FFFh
SA176
10101001XXX
32
548000h–54FFFFh
SA177
10101010XXX
32
550000h–557FFFh
SA178
10101011XXX
32
558000h–15FFFFh
SA179
10101100XXX
32
560000h–567FFFh
SA180
10101101XXX
32
568000h–56FFFFh
SA181
10101110XXX
32
570000h–577FFFh
SA182
10101111XXX
32
578000h–57FFFFh
SA183
10110000XXX
32
580000h–587FFFh
SA184
10110001XXX
32
588000h–58FFFFh
SA185
10110010XXX
32
590000h–597FFFh
SA186
10110011XXX
32
598000h–59FFFFh
SA187
10110100XXX
32
5A0000h–5A7FFFh
SA188
10110101XXX
32
5A8000h–5AFFFFh
SA189
10110110XXX
32
5B0000h–5B7FFFh
SA190
10110111XXX
32
5B8000h–5BFFFFh
SA191
10111000XXX
32
5C0000h–5C7FFFh
SA192
10111001XXX
32
5C8000h–5CFFFFh
SA193
10111010XXX
32
5D0000h–5D7FFFh
SA194
10111011XXX
32
5D8000h–5DFFFFh
SA195
10111100XXX
32
5E0000h–5E7FFFh
SA196
10111101XXX
32
5E8000h–5EFFFFh
SA197
10111110XXX
32
5F0000h–5F7FFFh
SA198
10111111XXX
32
5F8000h–5FFFFFh
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
Table 6.
Bank C
Bank
February 5, 2004
I N F O R M A T I O N
Am29PDL127H Sector Architecture (Continued)
Sector
Sector Address (A22-A12)
Sector Size (Kwords)
Address Range (x16)
SA199
11000000XXX
32
600000h–607FFFh
SA200
11000001XXX
32
608000h–60FFFFh
SA201
11000010XXX
32
610000h–617FFFh
SA202
11000011XXX
32
618000h–61FFFFh
SA203
11000100XXX
32
620000h–627FFFh
SA204
11000101XXX
32
628000h–62FFFFh
SA205
11000110XXX
32
630000h–637FFFh
SA206
11000111XXX
32
638000h–63FFFFh
SA207
11001000XXX
32
640000h–647FFFh
SA208
11001001XXX
32
648000h–64FFFFh
SA209
11001010XXX
32
650000h–657FFFh
SA210
11001011XXX
32
658000h–65FFFFh
SA211
11001100XXX
32
660000h–667FFFh
SA212
11001101XXX
32
668000h–66FFFFh
SA213
11001110XXX
32
670000h–677FFFh
SA214
11001111XXX
32
678000h–67FFFFh
SA215
11010000XXX
32
680000h–687FFFh
SA216
11010001XXX
32
688000h–68FFFFh
SA217
11010010XXX
32
690000h–697FFFh
SA218
11010011XXX
32
698000h–69FFFFh
SA219
11010100XXX
32
6A0000h–6A7FFFh
SA220
11010101XXX
32
6A8000h–6AFFFFh
SA221
11010110XXX
32
6B0000h–6B7FFFh
SA222
11010111XXX
32
6B8000h–6BFFFFh
SA223
11011000XXX
32
6C0000h–6C7FFFh
SA224
11011001XXX
32
6C8000h–6CFFFFh
SA225
11011010XXX
32
6D0000h–6D7FFFh
SA226
11011011XXX
32
6D8000h–6DFFFFh
SA227
11011100XXX
32
6E0000h–6E7FFFh
SA228
11011101XXX
32
6E8000h–6EFFFFh
SA229
11011110XXX
32
6F0000h–6F7FFFh
SA230
11011111XXX
32
6F8000h–6FFFFFh
Am75PDL191CHH/Am75PDL193CHH
27
A D V A N C E
Table 6.
Bank D
Bank
28
I N F O R M A T I O N
Am29PDL127H Sector Architecture (Continued)
Sector
Sector Address (A22-A12)
Sector Size (Kwords)
Address Range (x16)
SA231
11100000XXX
32
700000h–707FFFh
SA232
11100001XXX
32
708000h–70FFFFh
SA233
11100010XXX
32
710000h–717FFFh
SA234
11100011XXX
32
718000h–71FFFFh
SA235
11100100XXX
32
720000h–727FFFh
SA236
11100101XXX
32
728000h–72FFFFh
SA237
11100110XXX
32
730000h–737FFFh
SA238
11100111XXX
32
738000h–73FFFFh
SA239
11101000XXX
32
740000h–747FFFh
SA240
11101001XXX
32
748000h–74FFFFh
SA241
11101010XXX
32
750000h–757FFFh
SA242
11101011XXX
32
758000h–75FFFFh
SA243
11101100XXX
32
760000h–767FFFh
SA244
11101101XXX
32
768000h–76FFFFh
SA245
11101110XXX
32
770000h–777FFFh
SA246
11101111XXX
32
778000h–77FFFFh
SA247
11110000XXX
32
780000h–787FFFh
SA248
11110001XXX
32
788000h–78FFFFh
SA249
11110010XXX
32
790000h–797FFFh
SA250
11110011XXX
32
798000h–79FFFFh
SA251
11110100XXX
32
7A0000h–7A7FFFh
SA252
11110101XXX
32
7A8000h–7AFFFFh
SA253
11110110XXX
32
7B0000h–7B7FFFh
SA254
11110111XXX
32
7B8000h–7BFFFFh
SA255
11111000XXX
32
7C0000h–7C7FFFh
SA256
11111001XXX
32
7C8000h–7CFFFFh
SA257
11111010XXX
32
7D0000h–7D7FFFh
SA258
11111011XXX
32
7D8000h–7DFFFFh
SA259
11111100XXX
32
7E0000h–7E7FFFh
SA260
11111101XXX
32
7E8000h–7EFFFFh
SA261
11111110XXX
32
7F0000h–7F7FFFh
SA262
11111111000
4
7F8000h–7F8FFFh
SA263
11111111001
4
7F9000h–7F9FFFh
SA264
11111111010
4
7FA000h–7FAFFFh
SA265
11111111011
4
7FB000h–7FBFFFh
SA266
11111111100
4
7FC000h–7FCFFFh
SA267
11111111101
4
7FD000h–7FDFFFh
SA268
11111111110
4
7FE000h–7FEFFFh
SA269
11111111111
4
7FF000h–7FFFFFh
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
Table 7.
Bank 1A
Bank
I N F O R M A T I O N
Am29PDL129H Sector Architecture
Sector
CE#f1
CE#f2
Sector Address
(A21-A12)
Sector Size
(Kwords)
SA1-0
0
1
0000000XXX
32
000000h–007FFFh
SA1-1
0
1
0000001XXX
32
008000h–00FFFFh
SA1-2
0
1
0000010XXX
32
010000h–017FFFh
SA1-3
0
1
0000011XXX
32
018000h–01FFFFh
SA1-4
0
1
0000100XXX
32
020000h–027FFFh
SA1-5
0
1
0000101XXX
32
028000h–02FFFFh
SA1-6
0
1
0000110XXX
32
030000h–037FFFh
SA1-7
0
1
0000111XXX
32
038000h–03FFFFh
SA1-8
0
1
0001000XXX
32
040000h–047FFFh
SA1-9
0
1
0001001XXX
32
048000h–04FFFFh
SA1-10
0
1
0001010XXX
32
050000h–057FFFh
SA1-11
0
1
0001011XXX
32
058000h–05FFFFh
SA1-12
0
1
0001100XXX
32
060000h–067FFFh
SA1-13
0
1
0001101XXX
32
068000h–06FFFFh
SA1-14
0
1
0001110XXX
32
070000h–077FFFh
SA1-15
0
1
0001111XXX
32
078000h–07FFFFh
SA1-16
0
1
0010000XXX
32
080000h–087FFFh
SA1-17
0
1
0010001XXX
32
088000h–08FFFFh
SA1-18
0
1
0010010XXX
32
090000h–097FFFh
SA1-19
0
1
0010011XXX
32
098000h–09FFFFh
SA1-20
0
1
0010100XXX
32
0A0000h–0A7FFFh
SA1-21
0
1
0010101XXX
32
0A8000h–0AFFFFh
SA1-22
0
1
0010110XXX
32
0B0000h–0B7FFFh
SA1-23
0
1
0010111XXX
32
0B8000h–0BFFFFh
SA1-24
0
1
0011000XXX
32
0C0000h–0C7FFFh
SA1-25
0
1
0011001XXX
32
0C8000h–0CFFFFh
SA1-26
0
1
0011010XXX
32
0D0000h–0D7FFFh
SA1-27
0
1
0011011XXX
32
0D8000h–0DFFFFh
SA1-28
0
1
0011100XXX
32
0E0000h–0E7FFFh
SA1-29
0
1
0011101XXX
32
0E8000h–0EFFFFh
SA1-30
0
1
0011110XXX
32
0F0000h–0F7FFFh
SA1-31
0
1
0011111XXX
32
0F8000h–0FFFFFh
SA1-32
0
1
0100000XXX
32
100000h–107FFFh
SA1-33
0
1
0100001XXX
32
108000h–10FFFFh
SA1-34
0
1
0100010XXX
32
110000h–117FFFh
SA1-35
0
1
0100011XXX
32
118000h–11FFFFh
SA1-36
0
1
0100100XXX
32
120000h–127FFFh
SA1-37
0
1
0100101XXX
32
128000h–12FFFFh
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
Address Range (x16)
29
A D V A N C E
Table 7.
Bank 1A
Bank
30
I N F O R M A T I O N
Am29PDL129H Sector Architecture (Continued)
Sector
CE#f1
CE#f2
Sector Address
(A21-A12)
Sector Size
(Kwords)
SA1-38
0
1
0100110XXX
32
130000h–137FFFh
SA1-39
0
1
0100111XXX
32
138000h–13FFFFh
SA1-40
0
1
0101000XXX
32
140000h–147FFFh
SA1-41
0
1
0101001XXX
32
148000h–14FFFFh
SA1-42
0
1
0101010XXX
32
150000h–157FFFh
SA1-43
0
1
0101011XXX
32
158000h–15FFFFh
SA1-44
0
1
0101100XXX
32
160000h–167FFFh
SA1-45
0
1
0101101XXX
32
168000h–16FFFFh
SA1-46
0
1
0101110XXX
32
170000h–177FFFh
SA1-47
0
1
0101111XXX
32
178000h–17FFFFh
SA1-48
0
1
0110000XXX
32
180000h–187FFFh
SA1-49
0
1
0110001XXX
32
188000h–18FFFFh
SA1-50
0
1
0110010XXX
32
190000h–197FFFh
SA1-51
0
1
0110011XXX
32
198000h–19FFFFh
SA1-52
0
1
0110100XXX
32
1A0000h–1A7FFFh
SA1-53
0
1
0110101XXX
32
1A8000h–1AFFFFh
SA1-54
0
1
0110110XXX
32
1B0000h–1B7FFFh
SA1-55
0
1
0110111XXX
32
1B8000h–1BFFFFh
SA1-56
0
1
0111000XXX
32
1C0000h–1C7FFFh
SA1-57
0
1
0111001XXX
32
1C8000h–1CFFFFh
SA1-58
0
1
0111010XXX
32
1D0000h–1D7FFFh
SA1-59
0
1
0111011XXX
32
1D8000h–1DFFFFh
SA1-60
0
1
0111100XXX
32
1E0000h–1E7FFFh
SA1-61
0
1
0111101XXX
32
1E8000h–1EFFFFh
SA1-62
0
1
0111110XXX
32
1F0000h–1F7FFFh
SA1-63
0
1
0111111XXX
32
1F8000h–1FFFFFh
SA1-64
0
1
1000000XXX
32
200000h–207FFFh
SA1-65
0
1
1000001XXX
32
208000h–20FFFFh
SA1-66
0
1
1000010XXX
32
210000h–217FFFh
SA1-67
0
1
1000011XXX
32
218000h–21FFFFh
SA1-68
0
1
1000100XXX
32
220000h–227FFFh
SA1-69
0
1
1000101XXX
32
228000h–22FFFFh
SA1-70
0
1
1000110XXX
32
230000h–237FFFh
SA1-71
0
1
1000111XXX
32
238000h–23FFFFh
SA1-72
0
1
1001000XXX
32
240000h–247FFFh
SA1-73
0
1
1001001XXX
32
248000h–24FFFFh
SA1-74
0
1
1001010XXX
32
250000h–257FFFh
SA1-75
0
1
1001011XXX
32
258000h–25FFFFh
SA1-76
0
1
1001100XXX
32
260000h–267FFFh
SA1-77
0
1
1001101XXX
32
268000h–26FFFFh
Am75PDL191CHH/Am75PDL193CHH
Address Range (x16)
February 5, 2004
A D V A N C E
Table 7.
Bank 1A
Bank
I N F O R M A T I O N
Am29PDL129H Sector Architecture (Continued)
Sector
CE#f1
CE#f2
Sector Address
(A21-A12)
Sector Size
(Kwords)
SA1-78
0
1
1001110XXX
32
270000h–277FFFh
SA1-79
0
1
1001111XXX
32
278000h–27FFFFh
SA1-80
0
1
1010000XXX
32
280000h–287FFFh
SA1-81
0
1
1010001XXX
32
288000h–28FFFFh
SA1-82
0
1
1010010XXX
32
290000h–297FFFh
SA1-83
0
1
1010011XXX
32
298000h–29FFFFh
SA1-84
0
1
1010100XXX
32
2A0000h–2A7FFFh
SA1-85
0
1
1010101XXX
32
2A8000h–2AFFFFh
SA1-86
0
1
1010110XXX
32
2B0000h–2B7FFFh
SA1-87
0
1
1010111XXX
32
2B8000h–2BFFFFh
SA1-88
0
1
1011000XXX
32
2C0000h–2C7FFFh
SA1-89
0
1
1011001XXX
32
2C8000h–2CFFFFh
SA1-90
0
1
1011010XXX
32
2D0000h–2D7FFFh
SA1-91
0
1
1011011XXX
32
2D8000h–2DFFFFh
SA1-92
0
1
1011100XXX
32
2E0000h–2E7FFFh
SA1-93
0
1
1011101XXX
32
2E8000h–2EFFFFh
SA1-94
0
1
1011110XXX
32
2F0000h–2F7FFFh
SA1-95
0
1
1011111XXX
32
2F8000h–2FFFFFh
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
Address Range (x16)
31
A D V A N C E
Table 7.
Bank 1B
Bank
32
I N F O R M A T I O N
Am29PDL129H Sector Architecture (Continued)
Sector
CE#f1
CE#f2
Sector Address
(A21-A12)
Sector Size
(Kwords)
SA1-96
0
1
1100000XXX
32
300000h–307FFFh
SA1-97
0
1
1100001XXX
32
308000h–30FFFFh
SA1-98
0
1
1100010XXX
32
310000h–317FFFh
SA1-99
0
1
1100011XXX
32
318000h–31FFFFh
SA1-100
0
1
1100100XXX
32
320000h–327FFFh
SA1-101
0
1
1100101XXX
32
328000h–32FFFFh
SA1-102
0
1
1100110XXX
32
330000h–337FFFh
SA1-103
0
1
1100111XXX
32
338000h–33FFFFh
SA1-104
0
1
1101000XXX
32
340000h–347FFFh
SA1-105
0
1
1101001XXX
32
348000h–34FFFFh
SA1-106
0
1
1101010XXX
32
350000h–357FFFh
SA1-107
0
1
1101011XXX
32
358000h–35FFFFh
SA1-108
0
1
1101100XXX
32
360000h–367FFFh
SA1-109
0
1
1101101XXX
32
368000h–36FFFFh
SA1-110
0
1
1101110XXX
32
370000h–377FFFh
SA1-111
0
1
1101111XXX
32
378000h–37FFFFh
SA1-112
0
1
1110000XXX
32
380000h–387FFFh
SA1-113
0
1
1110001XXX
32
388000h–38FFFFh
SA1-114
0
1
1110010XXX
32
390000h–397FFFh
SA1-115
0
1
1110011XXX
32
398000h–39FFFFh
SA1-116
0
1
1110100XXX
32
3A0000h–3A7FFFh
SA1-117
0
1
1110101XXX
32
3A8000h–3AFFFFh
SA1-118
0
1
1110110XXX
32
3B0000h–3B7FFFh
SA1-119
0
1
1110111XXX
32
3B8000h–3BFFFFh
SA1-120
0
1
1111000XXX
32
3C0000h–3C7FFFh
SA1-121
0
1
1111001XXX
32
3C8000h–3CFFFFh
SA1-122
0
1
1111010XXX
32
3D0000h–3D7FFFh
SA1-123
0
1
1111011XXX
32
3D8000h–3DFFFFh
SA1-124
0
1
1111100XXX
32
3E0000h–3E7FFFh
SA1-125
0
1
1111101XXX
32
3E8000h–3EFFFFh
SA1-126
0
1
1111110XXX
32
3F0000h–3F7FFFh
SA1-127
0
1
1111111000
4
3F8000h–3F8FFFh
SA1-128
0
1
1111111001
4
3F9000h–3F9FFFh
SA1-129
0
1
1111111010
4
3FA000h–3FAFFFh
SA1-130
0
1
1111111011
4
3FB000h–3FBFFFh
SA1-131
0
1
1111111100
4
3FC000h–3FCFFFh
SA1-132
0
1
1111111101
4
3FD000h–3FDFFFh
SA1-133
0
1
1111111110
4
3FE000h–3FEFFFh
SA1-134
0
1
1111111111
4
3FF000h–3FFFFFh
Am75PDL191CHH/Am75PDL193CHH
Address Range (x16)
February 5, 2004
A D V A N C E
Table 7.
Bank 2A
Bank
I N F O R M A T I O N
Am29PDL129H Sector Architecture (Continued)
Sector
CE#f1
CE#f2
Sector Address
(A21-A12)
Sector Size
(Kwords)
Address Range (x16)
SA2-0
1
0
0000000000
4
000000h–000FFFh
SA2-1
1
0
0000000001
4
001000h–001FFFh
SA2-2
1
0
0000000010
4
002000h–002FFFh
SA2-3
1
0
0000000011
4
003000h–003FFFh
SA2-4
1
0
0000000100
4
004000h–004FFFh
SA2-5
1
0
0000000101
4
005000h–005FFFh
SA2-6
1
0
0000000110
4
006000h–006FFFh
SA2-7
1
0
0000000111
4
007000h–007FFFh
SA2-8
1
0
0000001XXX
32
008000h–00FFFFh
SA2-9
1
0
0000010XXX
32
010000h–017FFFh
SA2-10
1
0
0000011XXX
32
018000h–01FFFFh
SA2-11
1
0
0000100XXX
32
020000h–027FFFh
SA2-12
1
0
0000101XXX
32
028000h–02FFFFh
SA2-13
1
0
0000110XXX
32
030000h–037FFFh
SA2-14
1
0
0000111XXX
32
038000h–03FFFFh
SA2-15
1
0
0001000XXX
32
040000h–047FFFh
SA2-16
1
0
0001001XXX
32
048000h–04FFFFh
SA2-17
1
0
0001010XXX
32
050000h–057FFFh
SA2-18
1
0
0001011XXX
32
058000h–05FFFFh
SA2-19
1
0
0001100XXX
32
060000h–067FFFh
SA2-20
1
0
0001101XXX
32
068000h–06FFFFh
SA2-21
1
0
0001110XXX
32
070000h–077FFFh
SA2-22
1
0
0001111XXX
32
078000h–07FFFFh
SA2-23
1
0
0010000XXX
32
080000h–087FFFh
SA2-24
1
0
0010001XXX
32
088000h–08FFFFh
SA2-25
1
0
0010010XXX
32
090000h–097FFFh
SA2-26
1
0
0010011XXX
32
098000h–09FFFFh
SA2-27
1
0
0010100XXX
32
0A0000h–0A7FFFh
SA2-28
1
0
0010101XXX
32
0A8000h–0AFFFFh
SA2-29
1
0
0010110XXX
32
0B0000h–0B7FFFh
SA2-30
1
0
0010111XXX
32
0B8000h–0BFFFFh
SA2-31
1
0
0011000XXX
32
0C0000h–0C7FFFh
SA2-32
1
0
0011001XXX
32
0C8000h–0CFFFFh
SA2-33
1
0
0011010XXX
32
0D0000h–0D7FFFh
SA2-34
1
0
0011011XXX
32
0D8000h–0DFFFFh
SA2-35
1
0
0011100XXX
32
0E0000h–0E7FFFh
SA2-36
1
0
0011101XXX
32
0E8000h–0EFFFFh
SA2-37
1
0
0011110XXX
32
0F0000h–0F7FFFh
SA2-38
1
0
0011111XXX
32
0F8000h–0FFFFFh
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
33
A D V A N C E
Table 7.
Bank 2B
Bank
34
I N F O R M A T I O N
Am29PDL129H Sector Architecture (Continued)
Sector
CE#f1
CE#f2
Sector Address
(A21-A12)
Sector Size
(Kwords)
SA2-39
1
0
0100000XXX
32
100000h–107FFFh
SA2-40
1
0
0100001XXX
32
108000h–10FFFFh
SA2-41
1
0
0100010XXX
32
110000h–117FFFh
SA2-42
1
0
0100011XXX
32
118000h–11FFFFh
SA2-43
1
0
0100100XXX
32
120000h–127FFFh
SA2-44
1
0
0100101XXX
32
128000h–12FFFFh
SA2-45
1
0
0100110XXX
32
130000h–137FFFh
SA2-46
1
0
0100111XXX
32
138000h–13FFFFh
SA2-47
1
0
0101000XXX
32
140000h–147FFFh
SA2-48
1
0
0101001XXX
32
148000h–14FFFFh
SA2-49
1
0
0101010XXX
32
150000h–157FFFh
SA2-50
1
0
0101011XXX
32
158000h–15FFFFh
SA2-51
1
0
0101100XXX
32
160000h–167FFFh
SA2-52
1
0
0101101XXX
32
168000h–16FFFFh
SA2-53
1
0
0101110XXX
32
170000h–177FFFh
SA2-54
1
0
0101111XXX
32
178000h–17FFFFh
SA2-55
1
0
0110000XXX
32
180000h–187FFFh
SA2-56
1
0
0110001XXX
32
188000h–18FFFFh
SA2-57
1
0
0110010XXX
32
190000h–197FFFh
SA2-58
1
0
0110011XXX
32
198000h–19FFFFh
SA2-59
1
0
0110100XXX
32
1A0000h–1A7FFFh
SA2-60
1
0
0110101XXX
32
1A8000h–1AFFFFh
SA2-61
1
0
0110110XXX
32
1B0000h–1B7FFFh
SA2-62
1
0
0110111XXX
32
1B8000h–1BFFFFh
SA2-63
1
0
0111000XXX
32
1C0000h–1C7FFFh
SA2-64
1
0
0111001XXX
32
1C8000h–1CFFFFh
SA2-65
1
0
0111010XXX
32
1D0000h–1D7FFFh
SA2-66
1
0
0111011XXX
32
1D8000h–1DFFFFh
SA2-67
1
0
0111100XXX
32
1E0000h–1E7FFFh
SA2-68
1
0
0111101XXX
32
1E8000h–1EFFFFh
SA2-69
1
0
0111110XXX
32
1F0000h–1F7FFFh
SA2-70
1
0
0111111XXX
32
1F8000h–1FFFFFh
SA2-71
1
0
1000000XXX
32
200000h–207FFFh
SA2-72
1
0
1000001XXX
32
208000h–20FFFFh
SA2-73
1
0
1000010XXX
32
210000h–217FFFh
SA2-74
1
0
1000011XXX
32
218000h–21FFFFh
SA2-75
1
0
1000100XXX
32
220000h–227FFFh
SA2-76
1
0
1000101XXX
32
228000h–22FFFFh
SA2-77
1
0
1000110XXX
32
230000h–237FFFh
SA2-78
1
0
1000111XXX
32
238000h–23FFFFh
Am75PDL191CHH/Am75PDL193CHH
Address Range (x16)
February 5, 2004
A D V A N C E
Table 7.
Bank 2B
Bank
I N F O R M A T I O N
Am29PDL129H Sector Architecture (Continued)
Sector
CE#f1
CE#f2
Sector Address
(A21-A12)
Sector Size
(Kwords)
SA2-79
1
0
1001000XXX
32
240000h–247FFFh
SA2-80
1
0
1001001XXX
32
248000h–24FFFFh
SA2-81
1
0
1001010XXX
32
250000h–257FFFh
SA2-82
1
0
1001011XXX
32
258000h–25FFFFh
SA2-83
1
0
1001100XXX
32
260000h–267FFFh
SA2-84
1
0
1001101XXX
32
268000h–26FFFFh
SA2-85
1
0
1001110XXX
32
270000h–277FFFh
SA2-86
1
0
1001111XXX
32
278000h–27FFFFh
SA2-87
1
0
1010000XXX
32
280000h–287FFFh
SA2-88
1
0
1010001XXX
32
288000h–28FFFFh
SA2-89
1
0
1010010XXX
32
290000h–297FFFh
SA2-90
1
0
1010011XXX
32
298000h–29FFFFh
SA2-91
1
0
1010100XXX
32
2A0000h–2A7FFFh
SA2-92
1
0
1010101XXX
32
2A8000h–2AFFFFh
SA2-93
1
0
1010110XXX
32
2B0000h–2B7FFFh
SA2-94
1
0
1010111XXX
32
2B8000h–2BFFFFh
SA2-95
1
0
1011000XXX
32
2C0000h–2C7FFFh
SA2-96
1
0
1011001XXX
32
2C8000h–2CFFFFh
SA2-97
1
0
1011010XXX
32
2D0000h–2D7FFFh
SA2-98
1
0
1011011XXX
32
2D8000h–2DFFFFh
SA2-99
1
0
1011100XXX
32
2E0000h–2E7FFFh
SA2-100
1
0
1011101XXX
32
2E8000h–2EFFFFh
SA2-101
1
0
1011110XXX
32
2F0000h–2F7FFFh
SA2-102
1
0
1011111XXX
32
2F8000h–2FFFFFh
SA2-103
1
0
1100000XXX
32
300000h–307FFFh
SA2-104
1
0
1100001XXX
32
308000h–30FFFFh
SA2-105
1
0
1100010XXX
32
310000h–317FFFh
SA2-106
1
0
1100011XXX
32
318000h–31FFFFh
SA2-107
1
0
1100100XXX
32
320000h–327FFFh
SA2-108
1
0
1100101XXX
32
328000h–32FFFFh
SA2-109
1
0
1100110XXX
32
330000h–337FFFh
SA2-110
1
0
1100111XXX
32
338000h–33FFFFh
SA2-111
1
0
1101000XXX
32
340000h–347FFFh
SA2-112
1
0
1101001XXX
32
348000h–34FFFFh
SA2-113
1
0
1101010XXX
32
350000h–357FFFh
SA2-114
1
0
1101011XXX
32
358000h–35FFFFh
SA2-115
1
0
1101100XXX
32
360000h–367FFFh
SA2-116
1
0
1101101XXX
32
368000h–36FFFFh
SA2-117
1
0
1101110XXX
32
370000h–377FFFh
SA2-118
1
0
1101111XXX
32
378000h–37FFFFh
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
Address Range (x16)
35
A D V A N C E
Table 7.
Bank 2B
Bank
36
I N F O R M A T I O N
Am29PDL129H Sector Architecture (Continued)
Sector
CE#f1
CE#f2
Sector Address
(A21-A12)
Sector Size
(Kwords)
SA2-119
1
0
1110000XXX
32
380000h–387FFFh
SA2-120
1
0
1110001XXX
32
388000h–38FFFFh
SA2-121
1
0
1110010XXX
32
390000h–397FFFh
SA2-122
1
0
1110011XXX
32
398000h–39FFFFh
SA2-123
1
0
1110100XXX
32
3A0000h–3A7FFFh
SA2-124
1
0
1110101XXX
32
3A8000h–3AFFFFh
SA2-125
1
0
1110110XXX
32
3B0000h–3B7FFFh
SA2-126
1
0
1110111XXX
32
3B8000h–3BFFFFh
SA2-127
1
0
1111000XXX
32
3C0000h–3C7FFFh
SA2-128
1
0
1111001XXX
32
3C8000h–3CFFFFh
SA2-129
1
0
1111010XXX
32
3D0000h–3D7FFFh
SA2-130
1
0
1111011XXX
32
3D8000h–3DFFFFh
SA2-131
1
0
1111100XXX
32
3E0000h–3E7FFFh
SA2-132
1
0
1111101XXX
32
3E8000h–3EFFFFh
SA2-133
1
0
1111110XXX
32
3F0000h–3F7FFFh
SA2-134
1
0
1111111XXX
32
3F8000h–3FFFFFh
Am75PDL191CHH/Am75PDL193CHH
Address Range (x16)
February 5, 2004
A D V A N C E
I N F O R M A T I O N
Table 8. Am29PDL127H Boot Sector/Sector Block
Addresses for Protection/Unprotection
Sector
A22-A12
Sector/
Sector Block Size
011111XXXXX
128 (4x32) Kwords
A22-A12
Sector/
Sector Block Size
SA131-SA134
Sector
SA135-SA138
100000XXXXX
128 (4x32) Kwords
SA0
00000000000
4 Kwords
SA139-SA142
100001XXXXX
128 (4x32) Kwords
SA1
00000000001
4 Kwords
SA143-SA146
100010XXXXX
128 (4x32) Kwords
SA2
00000000010
4 Kwords
SA147-SA150
100011XXXXX
128 (4x32) Kwords
SA3
00000000011
4 Kwords
SA151-SA154
100100XXXXX
128 (4x32) Kwords
SA4
00000000100
4 Kwords
SA155-SA158
100101XXXXX
128 (4x32) Kwords
SA5
00000000101
4 Kwords
SA159-SA162
100110XXXXX
128 (4x32) Kwords
SA6
00000000110
4 Kwords
SA163-SA166
100111XXXXX
128 (4x32) Kwords
101000XXXXX
128 (4x32) Kwords
SA7
00000000111
4 Kwords
SA167-SA170
SA8
00000001XXX
32 Kwords
SA171-SA174
101001XXXXX
128 (4x32) Kwords
SA9
00000010XXX
32 Kwords
SA175-SA178
101010XXXXX
128 (4x32) Kwords
SA10
00000011XXX
32 Kwords
SA179-SA182
101011XXXXX
128 (4x32) Kwords
SA11-SA14
000001XXXXX
128 (4x32) Kwords
SA183-SA186
101100XXXXX
128 (4x32) Kwords
SA15-SA18
000010XXXXX
128 (4x32) Kwords
SA187-SA190
101101XXXXX
128 (4x32) Kwords
SA19-SA22
000011XXXXX
128 (4x32) Kwords
SA191-SA194
101110XXXXX
128 (4x32) Kwords
SA23-SA26
000100XXXXX
128 (4x32) Kwords
SA195-SA198
101111XXXXX
128 (4x32) Kwords
SA27-SA30
000101XXXXX
128 (4x32) Kwords
SA199-SA202
110000XXXXX
128 (4x32) Kwords
110001XXXXX
128 (4x32) Kwords
SA31-SA34
000110XXXXX
128 (4x32) Kwords
SA203-SA206
SA35-SA38
000111XXXXX
128 (4x32) Kwords
SA207-SA210
110010XXXXX
128 (4x32) Kwords
SA39-SA42
001000XXXXX
128 (4x32) Kwords
SA211-SA214
110011XXXXX
128 (4x32) Kwords
SA43-SA46
001001XXXXX
128 (4x32) Kwords
SA215-SA218
110100XXXXX
128 (4x32) Kwords
SA47-SA50
001010XXXXX
128 (4x32) Kwords
SA219-SA222
110101XXXXX
128 (4x32) Kwords
SA51-SA54
001011XXXXX
128 (4x32) Kwords
SA223-SA226
110110XXXXX
128 (4x32) Kwords
SA55-SA58
001100XXXXX
128 (4x32) Kwords
SA227-SA230
110111XXXXX
128 (4x32) Kwords
SA59-SA62
001101XXXXX
128 (4x32) Kwords
SA231-SA234
111000XXXXX
128 (4x32) Kwords
SA63-SA66
001110XXXXX
128 (4x32) Kwords
SA235-SA238
111001XXXXX
128 (4x32) Kwords
SA67-SA70
001111XXXXX
128 (4x32) Kwords
SA239-SA242
111010XXXXX
128 (4x32) Kwords
111011XXXXX
128 (4x32) Kwords
SA71-SA74
010000XXXXX
128 (4x32) Kwords
SA243-SA246
SA75-SA78
010001XXXXX
128 (4x32) Kwords
SA247-SA250
111100XXXXX
128 (4x32) Kwords
SA79-SA82
010010XXXXX
128 (4x32) Kwords
SA251-SA254
111101XXXXX
128 (4x32) Kwords
SA83-SA86
010011XXXXX
128 (4x32) Kwords
SA255-SA258
111110XXXXX
128 (4x32) Kwords
SA87-SA90
010100XXXXX
128 (4x32) Kwords
SA259
11111100XXX
32 Kwords
SA91-SA94
010101XXXXX
128 (4x32) Kwords
SA260
11111101XXX
32 Kwords
SA95-SA98
010110XXXXX
128 (4x32) Kwords
SA261
11111110XXX
32 Kwords
SA99-SA102
010111XXXXX
128 (4x32) Kwords
SA262
11111111000
4 Kwords
SA103-SA106
011000XXXXX
128 (4x32) Kwords
SA263
11111111001
4 Kwords
SA107-SA110
011001XXXXX
128 (4x32) Kwords
SA264
11111111010
4 Kwords
11111111011
4 Kwords
SA111-SA114
011010XXXXX
128 (4x32) Kwords
SA265
SA115-SA118
011011XXXXX
128 (4x32) Kwords
SA266
11111111100
4 Kwords
SA119-SA122
011100XXXXX
128 (4x32) Kwords
SA267
11111111101
4 Kwords
SA123-SA126
011101XXXXX
128 (4x32) Kwords
SA268
11111111110
4 Kwords
SA127-SA130
011110XXXXX
128 (4x32) Kwords
SA269
11111111111
4 Kwords
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
37
A D V A N C E
I N F O R M A T I O N
Table 9. Am29PDL129H Boot Sector/Sector Block
Addresses for Protection/Unprotection
CE#f1 Control
Table 10. Am29PDL129H Boot Sector/Sector
Block Addresses for Protection/Unprotection
CE#f2 Control
Sector
Group
A21-12
Sector/Sector
Block Size
Sector
Group
A21-12
Sector/Sector
Block Size
SA1-0–SA1-3
00000XXXXX
128 (4x32) Kwords
SA2-0
0000000000
4 Kwords
SA1-4–SA1-7
00001XXXXX
128 (4x32) Kwords
SA2-1
0000000001
4 Kwords
SA1-8–SA1-11
00010XXXXX
128 (4x32) Kwords
SA2-2
0000000010
4 Kwords
SA1-12–SA1-15
00011XXXXX
128 (4x32) Kwords
SA2-3
0000000011
4 Kwords
SA1-16–SA1-19
00100XXXXX
128 (4x32) Kwords
SA2-4
0000000100
4 Kwords
SA1-20–SA1-23
00101XXXXX
128 (4x32) Kwords
SA2-5
0000000101
4 Kwords
SA1-24–SA1-27
00110XXXXX
128 (4x32) Kwords
SA2-6
0000000110
4 Kwords
SA1-28–SA1-31
00111XXXXX
128 (4x32) Kwords
SA2-7
0000000111
4 Kwords
SA1-32–SA1-35
01000XXXXX
128 (4x32) Kwords
SA2-8
0000001XXX
32 Kwords
SA1-36–SA1-39
01001XXXXX
128 (4x32) Kwords
SA2-9
0000010XXX
32 Kwords
SA1-40–SA1-43
01010XXXXX
128 (4x32) Kwords
SA2-10
0000011XXX
32 Kwords
SA1-44–SA1-47
01011XXXXX
128 (4x32) Kwords
SA2-11 - SA2-14
00001XXXXX
128 (4x32) Kwords
SA1-48–SA1-51
01100XXXXX
128 (4x32) Kwords
SA2-15 - SA2-18
00010XXXXX
128 (4x32) Kwords
SA1-52–SA1-55
01101XXXXX
128 (4x32) Kwords
SA2-19 - SA2-22
00011XXXXX
128 (4x32) Kwords
SA1-56–SA1-59
01110XXXXX
128 (4x32) Kwords
SA2-23 - SA2-26
00100XXXXX
128 (4x32) Kwords
SA1-60–SA1-63
01111XXXXX
128 (4x32) Kwords
SA2-27 - SA2-30
00101XXXXX
128 (4x32) Kwords
SA1-64–SA1-67
10000XXXXX
128 (4x32) Kwords
SA2-31 - SA2-34
00110XXXXX
128 (4x32) Kwords
SA1-68–SA1-71
10001XXXXX
128 (4x32) Kwords
SA2-35 - SA2-38
00111XXXXX
128 (4x32) Kwords
SA1-72–SA1-75
10010XXXXX
128 (4x32) Kwords
SA2-39 - SA2-42
01000XXXXX
128 (4x32) Kwords
SA1-76–SA1-79
10011XXXXX
128 (4x32) Kwords
SA2-43 - SA2-46
01001XXXXX
128 (4x32) Kwords
SA1-80–SA1-83
10100XXXXX
128 (4x32) Kwords
SA2-47 - SA2-50
01010XXXXX
128 (4x32) Kwords
SA1-84–SA1-87
10101XXXXX
128 (4x32) Kwords
SA2-51 - SA2-54
01011XXXXX
128 (4x32) Kwords
SA1-88–SA1-91
10110XXXXX
128 (4x32) Kwords
SA2-55 - SA2-58
01100XXXXX
128 (4x32) Kwords
SA1-92–SA1-95
10111XXXXX
128 (4x32) Kwords
SA2-59 - SA2-62
01101XXXXX
128 (4x32) Kwords
SA1-96–SA1-99
11000XXXXX
128 (4x32) Kwords
SA2-63 - SA2-66
01110XXXXX
128 (4x32) Kwords
SA1-100–SA1-103
11001XXXXX
128 (4x32) Kwords
SA2-67 - SA2-70
01111XXXXX
128 (4x32) Kwords
SA1-104–SA1-107
11010XXXXX
128 (4x32) Kwords
SA2-71 - SA2-74
10000XXXXX
128 (4x32) Kwords
SA1-108–SA1-111
11011XXXXX
128 (4x32) Kwords
SA2-75 - SA2-78
10001XXXXX
128 (4x32) Kwords
SA1-112–SA1-115
11100XXXXX
128 (4x32) Kwords
SA2-79 - SA2-82
10010XXXXX
128 (4x32) Kwords
SA1-116–SA1-119
11101XXXXX
128 (4x32) Kwords
SA2-83 - SA2-86
10011XXXXX
128 (4x32) Kwords
SA1-120–SA1-123
11110XXXXX
128 (4x32) Kwords
SA2-87 - SA2-90
10100XXXXX
128 (4x32) Kwords
SA1-124
1111100XXX
32 Kwords
SA2-91 - SA2-94
10101XXXXX
128 (4x32) Kwords
SA1-125
1111101XXX
32 Kwords
SA2-95 - SA2-98
10110XXXXX
128 (4x32) Kwords
SA1-126
1111110XXX
32 Kwords
SA2-99 - SA2-102
10111XXXXX
128 (4x32) Kwords
SA1-127
1111111000
4 Kwords
SA2-103 - SA2-106
11000XXXXX
128 (4x32) Kwords
SA1-128
1111111001
4 Kwords
SA2-107 - SA2-110
11001XXXXX
128 (4x32) Kwords
SA1-129
1111111010
4 Kwords
SA2-111 - SA2-114
11010XXXXX
128 (4x32) Kwords
SA1-130
1111111011
4 Kwords
SA2-115 - SA2-118
11011XXXXX
128 (4x32) Kwords
SA1-131
1111111100
4 Kwords
SA2-119 - SA2-122
11100XXXXX
128 (4x32) Kwords
SA1-132
1111111101
4 Kwords
SA2-123 - SA2-126
11101XXXXX
128 (4x32) Kwords
SA1-133
1111111110
4 Kwords
SA2-127 - SA2-130
11110XXXXX
128 (4x32) Kwords
SA1-134
1111111111
4 Kwords
SA2-131 - SA2-134
11111XXXXX
128 (4x32) Kwords
38
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
SECTOR PROTECTION
The Am50PDL191CH/Am50PDL193CH features several levels of sector protection, which can disable both
the program and erase operations in certain sectors or
sector groups:
■ Dynamically Locked—The sector is protected and
can be changed by a simple command.
Persistent Sector Protection
To achieve these states, three types of “bits” are used:
A command sector protection method that replaces
the old 12 V controlled protection method.
Persistent Protection Bit (PPB)
Password Sector Protection
A highly sophisticated protection method that requires
a password before changes to certain sectors or sector groups are permitted.
WP# Hardware Protection
A write protect pin that can prevent program or erase
operations in sectors 0, 1, 268, and 269 in PDL 127 or
in SA1-133, SA1-134, SA2-0, SA2-1 in PDL 129. The
WP# Hardware Protection feature is always available,
regardless of which of the other two methods are chosen.
Selecting a Sector Protection Mode
The device defaults to the Persistent Sector Protection
mode. However, to prevents a program or virus from
later setting the Password Mode Locking Bit, which
would cause an unexpected shift from the default Persistent Sector Protection Mode into the Password Protection Mode, it is recommended that either of two
one-time programmable non-volatile bits that permanently define which sector protection method be set
before the device is first programmed. The Persistent Sector Protection Mode Locking Bit permanently sets the device to the Persistent Sector
Protection mode. The Password Mode Locking Bit
permanently sets the device to the Password Sector
Protection mode. It is not possible to switch between
the two protection modes once a locking bit has been
set.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at the factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected or unprotected. See Autoselect Command Sequence for details.
Persistent Sector Protection
The Persistent Sector Protection method replaces the
12 V controlled protection method in previous AMD
flash devices. This new method provides three different sector protection states:
■ Persistently Locked—The sector is protected and
cannot be changed.
February 5, 2004
■ Unlocked—The sector is unprotected and can be
changed by a simple command.
A single Persistent (non-volatile) Protection Bit is assigned to a maximum four sectors (see the sector address tables for specific sector protection groupings).
All 4 Kword boot-block sectors have individual sector
Persistent Protection Bits (PPBs) for greater flexibility.
Each PPB is individually modifiable through the PPB
Write Command.
The device erases all PPBs in parallel. If any PPB requires erasure, the device must be instructed to preprogram all of the sector PPBs prior to PPB erasure.
Otherwise, a previously erased sector PPBs can potentially be over-erased. The flash device does not
have a built-in means of preventing sector PPBs
over-erasure.
Persistent Protection Bit Lock (PPB Lock)
The Persistent Protection Bit Lock (PPB Lock) is a global volatile bit. When set to “1”, the PPBs cannot be
changed. When cleared (“0”), the PPBs are changeable. There is only one PPB Lock bit per device. The
PPB Lock is cleared after power-up or hardware reset.
There is no command sequence to unlock the PPB
Lock.
Dynamic Protection Bit (DYB)
A volatile protection bit is assigned for each sector.
After power-up or hardware reset, the contents of all
DYBs is “0”. Each DYB is individually modifiable
through the DYB Write Command.
When the par ts are first shipped, the PPBs are
cleared, the DYBs are cleared, and PPB Lock is defaulted to power up in the cleared state – meaning the
PPBs are changeable.
When the device is first powered on the DYBs power
up cleared (sectors not protected). The Protection
State for each sector is determined by the logical OR
of the PPB and the DYB related to that sector. For the
sectors that have the PPBs cleared, the DYBs control
whether or not the sector is protected or unprotected.
By issuing the DYB Write command sequences, the
DYBs will be set or cleared, thus placing each sector in
the protected or unprotected state. These are the
so-called Dynamic Locked or Unlocked states. They
are called dynamic states because it is very easy to
switch back and forth between the protected and unprotected conditions. This allows software to easily
protect sectors against inadvertent changes yet does
Am75PDL191CHH/Am75PDL193CHH
39
A D V A N C E
I N F O R M A T I O N
not prevent the easy removal of protection when
changes are needed. The DYBs maybe set or cleared
as often as needed.
The PPBs allow for a more static, and difficult to
change, level of protection. The PPBs retain their state
across power cycles because they are non-volatile. Individual PPBs are set with a command but must all be
cleared as a group through a complex sequence of
program and erasing commands. The PPBs are also
limited to 100 erase cycles.
The PPB Lock bit adds an additional level of protection. Once all PPBs are programmed to the desired
settings, the PPB Lock may be set to “1”. Setting the
PPB Lock disables all program and erase commands
to the non-volatile PPBs. In effect, the PPB Lock Bit
locks the PPBs into their current state. The only way to
clear the PPB Lock is to go through a power cycle.
System boot code can determine if any changes to the
PPB are needed; for example, to allow new system
code to be downloaded. If no changes are needed
then the boot code can set the PPB Lock to disable
any further changes to the PPBs during system operation.
The WP#/ACC write protect pin adds a final level of
hardware protection to sectors 0, 1, 268, and 269 in
PDL 127 or in SA1-133, SA1-134, SA2-0, SA2-1 in
PDL 129. When this pin is low it is not possible to
change the contents of these sectors. These sectors
generally hold system boot code. The WP#/ACC pin
can prevent any changes to the boot code that could
override the choices made while setting up sector protection during system initialization.
It is possible to have sectors that have been persistently locked, and sectors that are left in the dynamic
state. The sectors in the dynamic state are all unprotected. If there is a need to protect some of them, a
simple DYB Write command sequence is all that is
necessary. The DYB write command for the dynamic
sectors switch the DYBs to signify protected and unprotected, respectively. If there is a need to change the
status of the persistently locked sectors, a few more
steps are required. First, the PPB Lock bit must be disabled by either putting the device through a power-cycle, or hardware reset. The PPBs can then be
changed to reflect the desired settings. Setting the
PPB lock bit once again will lock the PPBs, and the device operates normally again.
The best protection is achieved by executing the PPB
lock bit set command early in the boot code, and protect the boot code by holding WP#/ACC = VIL.
Table 11.
Sector Protection Schemes
DYB
PPB
PPB
Lock
0
0
0
Unprotected—PPB and DYB are
changeable
0
0
1
Unprotected—PPB not
changeable, DYB is changeable
0
1
0
1
0
0
1
1
0
0
1
1
1
0
1
1
1
1
Sector State
Protected—PPB and DYB are
changeable
Protected—PPB not
changeable, DYB is changeable
Table 11 contains all possible combinations of the
DYB, PPB, and PPB lock relating to the status of the
sector.
In summary, if the PPB is set, and the PPB lock is set,
the sector is protected and the protection can not be
removed until the next power cycle clears the PPB
lock. If the PPB is cleared, the sector can be dynamically locked or unlocked. The DYB then controls
whether or not the sector is protected or unprotected.
If the user attempts to program or erase a protected
sector, the device ignores the command and returns to
read mode. A program command to a protected sector
enables status polling for approximately 1 µs before
the device returns to read mode without having modified the contents of the protected sector. An erase
command to a protected sector enables status polling
for approximately 50 µs after which the device returns
to read mode without having erased the protected sector.
The programming of the DYB, PPB, and PPB lock for a
g i v e n s e c t o r c a n b e ve r i f i e d b y w r i t i n g a
DYB/PPB/PPB lock verify command to the device.
Persistent Sector Protection Mode Locking Bit
Like the password mode locking bit, a Persistent Sector Protection mode locking bit exists to guarantee that
the device remain in software sector protection. Once
set, the Persistent Sector Protection locking bit prevents programming of the password protection mode
locking bit. This guarantees that a hacker could not
place the device in password protection mode.
Password Protection Mode
The Password Sector Protection Mode method allows
an even higher level of security than the Persistent
Sector Protection Mode. There are two main differ-
40
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
ences between the Persistent Sector Protection and
the Password Sector Protection Mode:
■ When the device is first powered on, or comes out
of a reset cycle, the PPB Lock bit set to the locked
state, rather than cleared to the unlocked state.
■ The only means to clear the PPB Lock bit is by writing a unique 64-bit Password to the device.
The Password Sector Protection method is otherwise
identical to the Persistent Sector Protection method.
A 64-bit password is the only additional tool utilized in
this method.
Once the Password Mode Locking Bit is set, the password is permanently set with no means to read, program, or erase it. The password is used to clear the
PPB Lock bit. The Password Unlock command must
be written to the flash, along with a password. The
flash device internally compares the given password
with the pre-programmed password. If they match, the
PPB Lock bit is cleared, and the PPBs can be altered.
If they do not match, the flash device does nothing.
There is a built-in 2 µs delay for each “password
check.” This delay is intended to thwart any efforts to
run a program that tries all possible combinations in
order to crack the password.
Password and Password Mode Locking Bit
In order to select the Password sector protection
scheme, the customer must first program the password. The password may be correlated to the unique
Electronic Serial Number (ESN) of the particular flash
device. Each ESN is different for every flash device;
therefore each password should be different for every
flash device. While programming in the password region, the customer may perform Password Verify operations.
Once the desired password is programmed in, the
customer must then set the Password Mode Locking
Bit. This operation achieves two objectives:
1. Permanently sets the device to operate using the
Password Protection Mode. It is not possible to reverse this function.
2. Disables all further commands to the password region. All program, and read operations are ignored.
Both of these objectives are important, and if not carefully considered, may lead to unrecoverable errors.
The user must be sure that the Password Protection
method is desired when setting the Password Mode
Locking Bit. More importantly, the user must be sure
that the password is correct when the Password Mode
Locking Bit is set. Due to the fact that read operations
are disabled, there is no means to verify what the
password is afterwards. If the password is lost after
setting the Password Mode Locking Bit, there will be
no way to clear the PPB Lock bit.
February 5, 2004
The Password Mode Locking Bit, once set, prevents
reading the 64-bit password on the DQ bus and further
password programming. The Password Mode Locking
Bit is not erasable. Once Password Mode Locking Bit
is programmed, the Persistent Sector Protection Locking Bit is disabled from programming, guaranteeing
that no changes to the protection scheme are allowed.
64-bit Password
The 64-bit Password is located in its own memory
space and is accessible through the use of the Password Program and Verify commands (see “Password
Verify Command”). The password function works in
conjunction with the Password Mode Locking Bit,
which when set, prevents the Password Verify command from reading the contents of the password on
the pins of the device.
Write Protect (WP#)
The Write Protect feature provides a hardware method
of protecting sectors 0, 1, 268, and 269 in PDL 127 or
in SA1-133, SA1-134, SA2-0, SA2-1 in PDL 129 without using VID. This function is provided by the WP# pin
and overrides the previously discussed High Voltage
Sector Protection method.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the two
outermost 4 Kword sectors on both ends of the flash
array independent of whether it was previously protected or unprotected.
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether sectors 0, 1, 268, and 269 in
PDL 127 or in SA1-133, SA1-134, SA2-0, SA2-1 in
PDL 129 were last set to be protected or unprotected.
That is, sector protection or unprotection for these sectors depends on whether they were last protected or
unprotected using the method described in High Voltage Sector Protection.
Note that the WP#/ACC pin must not be left floating or
unconnected; inconsistent behavior of the device may
result.
Persistent Protection Bit Lock
The Persistent Protection Bit (PPB) Lock is a volatile
bit that reflects the state of the Password Mode Locking Bit after power-up reset. If the Password Mode
Lock Bit is also set after a hardware reset (RESET#
asserted) or a power-up reset, the ONLY means for
clearing the PPB Lock Bit in Password Protection
Mode is to issue the Password Unlock command. Successful execution of the Password Unlock command
clears the PPB Lock Bit, allowing for sector PPBs
modifications. Asserting RESET#, taking the device
through a power-on reset, or issuing the PPB Lock Bit
Set command sets the PPB Lock Bit to a “1” when the
Password Mode Lock Bit is not set.
Am75PDL191CHH/Am75PDL193CHH
41
A D V A N C E
I N F O R M A T I O N
If the Password Mode Locking Bit is not set, including
Persistent Protection Mode, the PPB Lock Bit is
cleared after power-up or hardware reset. The PPB
Lock Bit is set by issuing the PPB Lock Bit Set command. Once set the only means for clearing the PPB
Lock Bit is by issuing a hardware or power-up reset.
The Password Unlock command is ignored in Persistent Protection Mode.
42
High Voltage Sector Protection
Sector protection and unprotection may also be implemented using programming equipment. The procedure requires high voltage (VID ) to be placed on the
RESET# pin. Refer to Figure 1 for details on this procedure. Note that for sector unprotect, all unprotected
sectors must first be protected prior to the first sector
write cycle.
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 4 µs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 4 µs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A7-A0 =
00000010
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A7-A0 =
01000010
Wait 100 µs
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Verify Sector
Protect: Write 40h
to sector address
with A7-A0 =
00000010
Reset
PLSCNT = 1
Read from
sector address
with A7-A0 =
00000010
Wait 1.2 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A7-A0 =
00000010
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
Remove VID
from RESET#
No
Yes
Protect another
sector?
No
Write reset
command
Remove VID
from RESET#
Sector Protect
complete
Write reset
command
Device failed
Read from
sector address
with A7-A0 =
00000010
Data = 01h?
Sector Protect
complete
Sector Protect
Algorithm
PLSCNT
= 1000?
Set up
next sector
address
No
Yes
Remove VID
from RESET#
Write reset
command
Data = 00h?
Yes
Last sector
verified?
No
Yes
Remove VID
from RESET#
Sector Unprotect
complete
Write reset
command
Device failed
Sector Unprotect
complete
Sector Unprotect
Algorithm
Figure 1. In-System Sector Protection/
Sector Unprotection Algorithms
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
43
A D V A N C E
I N F O R M A T I O N
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected
sectors can be programmed or erased by selecting the
sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are
protected again. Figure 2 shows the algorithm, and
Figure 23 shows the timing diagrams, for this feature.
While PPB lock is set, the device cannot enter the
Temporary Sector Unprotection Mode.
tection mode and Password Protection mode. It uses
i nd i cato r bi ts ( D Q6 , D Q7 ) to in di ca te the factory-locked and customer-locked status of the part.
The system accesses the SecSi Sector through a
command sequence (see “Enter SecSi™ Sector/Exit
SecSi Sector Command Sequence”). After the system
has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by using the addresses normally occupied by the boot sectors. This
mode of operation continues until the system issues
the Exit SecSi Sector command sequence, or until
power is removed from the device. On power-up, or
following a hardware reset, the device reverts to sending commands to the normal address space.
Factory-Locked Area (64 words)
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
T h e fa c t o r y - l o cke d a r e a o f t h e S e c S i S e c t o r
(000000h-00003Fh) is locked when the par t is
shipped, whether or not the area was programmed at
the factory. The SecSi Sector Factory-locked Indicator
Bit (DQ7) is permanently set to a “1”. AMD offers the
ExpressFlash service to program the factory-locked
area with a random ESN, a customer-defined code, or
any combination of the two. Because only AMD can
program and protect the factory-locked area, this
method ensures the security of the ESN once the
product is shipped to the field. Contact an AMD representative for details on using AMD’s ExpressFlash service. Note that the ACC function and unlock bypass
modes are not available when the SecSi Sector is enabled.
Customer-Lockable Area (64 words)
Notes:
1. All protected sectors unprotected (If WP#/ACC = VIL,
sectors 0, 1, 268, 269 in PDL 127 or in SA1-133,
SA1-134, SA2-0, SA2-1 in PDL 129.will remain
protected).
2. All previously protected sectors are protected once
again.
Figure 2.
Temporary Sector Unprotect Operation
SecSi™ (Secured Silicon) Sector
Flash Memory Region
The SecSi (Secured Silicon) Sector feature provides a
Flash memory region that enables permanent part
identification through an Electronic Serial Number
(ESN) The 128-word SecSi sector is divided into 64
factory-lockable words that can be programmed and
locked by the customer. The SecSi sector is located at
addresses 000000h-00007Fh in both Persistent Pro-
44
The customer-lockable area of the SecSi Sector
(000040h-00007Fh) is shipped unprotected, which allows the customer to program and optionally lock the
area as appropriate for the application. The SecSi
Sector Customer-locked Indicator Bit (DQ6) is shipped
as “0” and can be permanently locked to “1” by issuing
the SecSi Protection Bit Program Command. The
SecSi Sector can be read any number of times, but
can be programmed and locked only once. Note that
the accelerated programming (ACC) and unlock bypass functions are not available when programming
the SecSi Sector.
The Customer-lockable SecSi Sector area can be protected using one of the following procedures:
■ Follow the SecSi Sector Protection Algorithm as
shown in . This allows in-system protection of the
SecSi Sector without raising any device pin to a
high voltage. Note that this method is only applicable to the SecSi Sector.
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
START
SecSiTM Sector Entry
Write AAh to address 555h
Write 55h to address 2AAh
Write 88h to address 555h
SecSi Sector Entry
SecSi Sector
Protection Entry
Write AAh to address 555h
Write 55h to address 2AAh
Write 60h to address 555h
PLSCNT = 1
Protect SecSi Sector:
write 68h to sector address
with A7–A0 = 00011010
SecSi Sector Protection
Time out 256 µs
Increment PLSCNT
Verify SecSi Sector:
write 48h to sector address
with A7–A0 = 00011010
Read from sector address
(SA0 + 1Ah)
No
PLSCNT = 25?
No
Yes
Device Failed
Data = 01h?
Yes
SecSi Sector
Protection Completed
SecSi Sector Exit
Write 555h/AAh
Write 2AAh/55h
Write SA0+555h/90h
Write XXXh/00h
Figure 3.
February 5, 2004
SecSi Sector Exit
SecSi Protection Algorithm
Am75PDL191CHH/Am75PDL193CHH
45
A D V A N C E
I N F O R M A T I O N
Once the SecSi Sector is locked and verified, the system must write the Exit SecSi Sector Region command sequence to return to reading and writing the
remainder of the array.
The SecSi Sector lock must be used with caution
since, once locked, there is no procedure available for
unlocking the SecSi Sector area and none of the bits
in the SecSi Sector memory space can be modified in
any way.
SecSi Sector Protection Bits
The SecSi Sector Protection Bits prevent programming of the SecSi Sector memory area. Once set, the
SecSi Sector memory area contents are non-modifiable.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes. In addition, the following
hardware data protection measures prevent accidental
erasure or programming, which might otherwise be
caused by spurious system level signals during VCC
power-up and power-down transitions, or from system
noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control
pins to prevent unintentional writes when V CC is
greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 3 ns (typical) on OE#,
CE#f1, CE#f2 or WE# do not initiate a write cycle.
write cycle, CE#f1/CE#f2 and WE# must be a logical
zero while OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE#f1 = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
COMMON FLASH MEMORY INTERFACE
(CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h, any time the device is ready to read array data.
The system can read CFI information at the addresses
given in Tables 12–15. To terminate reading CFI data,
the system must write the reset command. The CFI
Query mode is not accessible when the device is executing an Embedded Program or embedded Erase algorithm.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 12–15. The
system must write the reset command to return the
device to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the World
Wide Web at http://www.amd.com/flash/cfi. Alternatively, contact an AMD representative for copies of
these documents.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V IL, CE#f1 =CE#f2 = VIH or WE# = VIH . To initiate a
46
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
Table 12.
I N F O R M A T I O N
CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 13.
System Interface String
Addresses
Data
1Bh
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0004h
Typical timeout per single byte/word write 2N µs
20h
0000h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0005h
Max. timeout for byte/word write 2N times typical
24h
0000h
Max. timeout for buffer write 2N times typical
25h
0004h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
February 5, 2004
Description
Am75PDL191CHH/Am75PDL193CHH
47
A D V A N C E
Table 14.
48
I N F O R M A T I O N
Device Geometry Definition
Addresses
Data
Description
27h
0018h
Device Size = 2N byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
00FDh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
Table 15.
I N F O R M A T I O N
Primary Vendor-Specific Extended Query
Addresses
Data
Description
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
0031h
Major version number, ASCII (reflects modifications to the silicon)
44h
0033h
Minor version number, ASCII (reflects modifications to the CFI table)
45h
000Ch
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Silicon Revision Number (Bits 7-2)
46h
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
0007h
Sector Protect/Unprotect scheme
01 =29F040 mode, 02 = 29F016 mode, 03 = 29F400, 04 = 29LV800 mode
4Ah
00E7h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors excluding Bank 1
4Bh
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
0002h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
0085h
4Eh
0095h
4Fh
0001h
50h
0001h
57h
0004h
58h
0027h
59h
0060h
5Ah
0060h
5Bh
0027h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
February 5, 2004
00h = Uniform device, 02h = Bottom Boot Device, 03h = Top Boot Device, 04h = Both
Top and Bottom
Program Suspend
0 = Not supported, 1 = Supported
Bank Organization
00 = Data at 4Ah is zero, X = Number of Banks
Bank 1 Region Information
X = Number of Sectors in Bank 1
Bank 2 Region Information
X = Number of Sectors in Bank 2
Bank 3 Region Information
X = Number of Sectors in Bank 3
Bank 4 Region Information
X = Number of Sectors in Bank 4
Am75PDL191CHH/Am75PDL193CHH
49
A D V A N C E
I N F O R M A T I O N
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Table 16 defines the valid register command
sequences. Writing incorrect address and data values or writing them in the improper sequence may
place the device in an unknown state. A reset command is then required to return the device to reading
array data.
All addresses are latched on the falling edge of WE#
or CE#f1/CE#f2 (PDL129H only), whichever happens
later. All data is latched on the rising edge of WE# or
CE#f1/CE#f2 (PDL129H only), whichever happens
first. Refer to the AC Characteristics section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the corresponding ban k enters the erase-suspend-read mode, after which the system can read
data from any non-erase-suspended sector within the
same bank. The system can read array data using the
standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming
operation in the Erase Suspend mode, the system
may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the
next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
MCP Device Bus Operations section for more information. The Read-Only Operations – Am29PDL127H and
Read-Only Operations – Am29PDL127H tables provide the read parameters, and Figure 13 shows the
timing diagram.
Reset Command
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
50
erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to the read mode. If the
program command sequence is written to a bank that
is in the Erase Suspend mode, writing the reset
co m m an d re tur ns th a t ba nk to the e ra s e- s us pend-read mode. Once programming begins, however,
the device ignores reset commands until the operation
is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If a bank
entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that
bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
The autoselect command sequence may be written to
an address within a bank that is either in the read or
erase-suspend-read mode. The autoselect command
may not be written while the device is actively programming or erasing in the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read any number of
autoselect codes without reinitiating the command sequence.
Table 16 shows the address and data requirements.
To determine sector protection information, the system
must write to the appropriate bank address (BA) and
sector address (SA). Table 4 shows the address range
and bank number associated with each sector.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing a random, eight word electronic serial number (ESN). The system can access the SecSi Sector
region by issuing the three-cycle Enter SecSi Sector
command sequence. The device continues to access
the SecSi Sector region until the system issues the
four-cycle Exit SecSi Sector command sequence. The
Exit SecSi Sector command sequence returns the device to normal operation. The SecSi Sector is not accessible when the device is executing an Embedded
Program or embedded Erase algorithm. Table 16
shows the address and data requirements for both
command sequences. See also “SecSi™ (Secured Silicon) Sector Flash Memory Region” for further information. Note that the ACC function and unlock bypass
modes are not available when the SecSi Sector is enabled.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Table 16 shows the address
and data requirements for the program command sequence.
When the Embedded Program algorithm is complete,
that bank then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Refer to the Write Operation
Status section for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. Note that the SecSi sector, autoselect, and
CFI functions are unavailable when the SecSi Sector
is enabled. The program command sequence should
be reinitiated once that bank has returned to the read
mode, to ensure data integrity.
February 5, 2004
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause that bank to set DQ5 = 1, or cause the DQ7 and
DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a “0”
to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program data to a bank faster than using the standard
program command sequence. The unlock bypass
command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank
then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is
required to program in this mode. The first cycle in this
sequence contains the unlock bypass program command, A0h; the second cycle contains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. Table 16 shows the requirements for the
command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence.
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at V HH any operation
other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not
be left floating or unconnected; inconsistent behavior
of the device may result.
Figure 4 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figures 16 and 17 for timing diagrams.
Am75PDL191CHH/Am75PDL193CHH
51
A D V A N C E
I N F O R M A T I O N
the SecSi sector, autoselect, and CFI functions are unavailable when the SecSi Sector is enabled. If that occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading
array data, to ensure data integrity.
START
Figure 5 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 18 for timing diagrams.
Write Program
Command Sequence
Sector Erase Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 16 for program command sequence.
Figure 4.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Table 16
shows the address and data requirements for the chip
erase command sequence.
When the Embedded Erase algorithm is complete,
that bank returns to the read mode and addresses are
no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2,
or RY/BY#. Refer to the Write Operation Status section for information on these status bits.
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset immediately terminates the erase operation. Note that
52
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command.Table 16 shows the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase
time-out of 50 µs occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out
may or may not be accepted. It is recommended that
processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. Any command other than Sector Erase or
Erase Suspend during the time-out period resets
that bank to the read mode. Note that the SecSi sector, autoselect, and CFI functions are unavailable
when the SecSi Sector is enabled. The system must
rewrite the command sequence and any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:
Sector Erase Timer). The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
data from the non-erasing bank. The system can de-
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
termine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer
to the Write Operation Status section for information
on these status bits.
period during the sector erase command sequence.
The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program
algorithm.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
When the Erase Suspend command is written during
the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation. Addresses are “don’t-cares” when
writing the Erase suspend command.
Figure 5 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 18 section for timing diagrams.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 16 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Figure 5.
Erase Operation
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 80 µs time-out
February 5, 2004
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors produces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Word Program operation.
Refer to the Write Operation Status section for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. The device
allows reading autoselect codes even at addresses
within erasing sectors, since the codes are not stored
in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation.
Refer to the Autoselect Command Sequence sections
for details.
To resume the sector erase operation, the system
must write the Erase Resume command (address bits
are don’t care). The bank address of the erase-suspended bank is required when writing this command.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the chip has resumed erasing.
Password Program Command
The Password Program Command permits programming the password that is used as part of the hardware protection scheme. The actual password is
64-bits long. Four Password Program commands are
required to program the password. The system must
enter the unlock cycle, password program command
(38h) and the program address/data for each portion
Am75PDL191CHH/Am75PDL193CHH
53
A D V A N C E
I N F O R M A T I O N
of the password when programming. There are no provisions for entering the 2-cycle unlock cycle, the password program command, and all the password data.
There is no special addressing order required for programming the password. Also, when the password is
undergoing programming, Simultaneous Operation is
disabled. Read operations to any memory location will
return the programming status. Once programming is
complete, the user must issue a Read/Reset command to return the device to normal operation. Once
the Password is written and verified, the Password
Mode Locking Bit must be set in order to prevent verification. The Password Program Command is only capable of programming “0”s. Programming a “1” after a
cell is programmed as a “0” results in a time-out by the
Embedded Program Algorithm™ with the cell remaining as a “0”. The password is all ones when shipped
from the factory. All 64-bit password combinations are
valid as a password.
Password Verify Command
The Password Verify Command is used to verify the
Password. The Password is verifiable only when the
Password Mode Locking Bit is not programmed. If the
Password Mode Locking Bit is programmed and the
user attempts to verify the Password, the device will always drive all F’s onto the DQ data bus.
The Password Verify command is permitted if the
SecSi sector is enabled. Also, the device will not operate in Simultaneous Operation when the Password
Verify command is executed. Only the password is returned regardless of the bank address. The lower two
address bits (A1-A0) are valid during the Password
Verify. Writing the Read/Reset command returns the
device back to normal operation.
Password Protection Mode Locking Bit
Program Command
The Password Protection Mode Locking Bit Program
Command programs the Password Protection Mode
Locking Bit, which prevents further verifies or updates
to the Password. Once programmed, the Password
Protection Mode Locking Bit cannot be erased! If the
Password Protection Mode Locking Bit is verified as
program without margin, the Password Protection
Mode Locking Bit Program command can be executed
to improve the program margin. Once the Password
Protection Mode Locking Bit is programmed, the Persistent Sector Protection Locking Bit program circuitry
is disabled, thereby forcing the device to remain in the
Password Protection mode. Exiting the Mode Locking
Bit Program command is accomplished by writing the
Read/Reset command.
54
Persistent Sector Protection Mode
Locking Bit Program Command
The Persistent Sector Protection Mode Locking Bit
Program Command programs the Persistent Sector
Protection Mode Locking Bit, which prevents the Password Mode Locking Bit from ever being programmed.
If the Persistent Sector Protection Mode Locking Bit is
verified as programmed without margin, the Persistent
Sector Protection Mode Locking Bit Program Command should be reissued to improve program margin.
By disabling the program circuitry of the Password
Mode Locking Bit, the device is forced to remain in the
Persistent Sector Protection mode of operation, once
this bit is set. Exiting the Persistent Protection Mode
Locking Bit Program command is accomplished by
writing the Read/Reset command.
SecSi Sector Protection Bit Program
Command
The SecSi Sector Protection Bit Program Command
programs the SecSi Sector Protection Bit, which prevents the SecSi sector memory from being cleared. If
the SecSi Sector Protection Bit is verified as programmed without margin, the SecSi Sector Protection
Bit Program Command should be reissued to improve
program margin. Exiting the VCC -level SecSi Sector
Protection Bit Program Command is accomplished by
writing the Read/Reset command.
PPB Lock Bit Set Command
The PPB Lock Bit Set command is used to set the
PPB Lock bit if it is cleared either at reset or if the
Password Unlock command was successfully executed. There is no PPB Lock Bit Clear command.
Once the PPB Lock Bit is set, it cannot be cleared unless the device is taken through a power-on clear or
the Password Unlock command is executed. Upon setting the PPB Lock Bit, the PPBs are latched into the
DYBs. If the Password Mode Locking Bit is set, the
PPB Lock Bit status is reflected as set, even after a
power-on reset cycle. Exiting the PPB Lock Bit Set
command is accomplished by writing the Read/Reset
command (only in the Persistent Protection Mode).
DYB Write Command
The DYB Write command is used to set or clear a DYB
for a given sector. The high order address bits
A22-A12 for PDL127 and (A21–A12) for PDL129H are
issued at the same time as the code 01h or 00h on
DQ7-DQ0. All other DQ data bus pins are ignored during the data write cycle. The DYBs are modifiable at
any time, regardless of the state of the PPB or PPB
Lock Bit. The DYBs are cleared at power-up or hardware reset. Exiting the DYB Write command is accomplished by writing the Read/Reset command.
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
Password Unlock Command
The Password Unlock command is used to clear the
PPB Lock Bit so that the PPBs can be unlocked for
modification, thereby allowing the PPBs to become accessible for modification. The exact password must be
entered in order for the unlocking function to occur.
This command cannot be issued any faster than 2 µs
at a time to prevent a hacker from running through all
64-bit combinations in an attempt to correctly match a
password. If the command is issued before the 2 µ s
execution window for each portion of the unlock, the
command will be ignored.
Once the Password Unlock command is entered, the
RY/BY# indicates that the device is busy. Approximately 1 µs is required for each portion of the unlock.
Once the first portion of the password unlock completes (RY/BY# is not low or DQ6 does not toggle
when read), the next part of the password is written.
The system must thus monitor RY/BY# or the status
bits to confirm when to write the next portion of the
password. Seven cycles are required to successfully
clear the PPB Lock Bit.
determine whether the PPB has been erased with
margin. If the PPBs has been erased without margin,
the erase command should be reissued to improve the
program margin.
It is the responsibility of the user to preprogram all
PPBs prior to issuing the All PPB Erase command. If
the user attempts to erase a cleared PPB, over-erasure may occur making it difficult to program the PPB
at a later time. Also note that the total number of PPB
program/erase cycles is limited to 100 cycles. Cycling
the PPBs beyond 100 cycles is not guaranteed.
DYB Write Command
The DYB Write command is used for setting the DYB,
which is a volatile bit that is cleared at reset. There is
one DYB per sector. If the PPB is set, the sector is protected regardless of the value of the DYB. If the PPB is
cleared, setting the DYB to a 1 protects the sector from
programs or erases. Since this is a volatile bit, removing power or resetting the device will clear the DYBs.
The bank address is latched when the command is
written.
PPB Program Command
PPB Lock Bit Set Command
The PPB Program command is used to program, or
set, a given PPB. Each PPB is individually programmed (but is bulk erased with the other PPBs).
The specific sector address (A21–A12) are written at
the same time as the program command 60h with A6
= 0. If the PPB Lock Bit is set and the corresponding
PPB is set for the sector, the PPB Program command
will not execute and the command will time-out without
programming the PPB.
The PPB Lock Bit set command is used for setting the
DYB, which is a volatile bit that is cleared at reset.
There is one DYB per sector. If the PPB is set, the sector is protected regardless of the value of the DYB. If
the PPB is cleared, setting the DYB to a 1 protects the
sector from programs or erases. Since this is a volatile
bit, removing power or resetting the device will clear
the DYBs. The bank address is latched when the command is written.
After programming a PPB, two additional cycles are
needed to determine whether the PPB has been programmed with margin. If the PPB has been programmed without margin, the program command
should be reissued to improve the program margin.
Also note that the total number of PPB program/erase
cycles is limited to 100 cycles. Cycling the PPBs beyond 100 cycles is not guaranteed.
PPB Status Command
The PPB Program command does not follow the Embedded Program algorithm.
PPB Lock Bit Status Command
The programming of the PPB Lock Bit for a given sector can be verified by writing a PPB Lock Bit status verify command to the device.
Sector Protection Status Command
All PPB Erase Command
The All PPB Erase command is used to erase all
PPBs in bulk. There is no means for individually erasing a specific PPB. Unlike the PPB program, no specific sector address is required. However, when the
PPB erase command is written all Sector PPBs are
erased in parallel. If the PPB Lock Bit is set the ALL
PPB Erase command will not execute and the command will time-out without erasing the PPBs. After
erasing the PPBs, two additional cycles are needed to
February 5, 2004
The programming of the PPB for a given sector can be
verified by writing a PPB status verify command to the
device.
The programming of either the PPB or DYB for a given
sector or sector group can be verified by writing a Sector Protection Status command to the device.
Note that there is no single command to independently
verify the programming of a DYB for a given sector
group.
Am75PDL191CHH/Am75PDL193CHH
55
A D V A N C E
I N F O R M A T I O N
Command Definitions Tables
Table 16.
Memory Array Command Definitions
Cycles
Bus Cycles (Notes 1–4)
Command (Notes)
Read (5)
1
RA
Reset (6)
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
(BA)X00
01
Device ID (10)
6
555
AA
2AA
55
555
90
(BA)X01
7E
Autoselect
(Note 7)
Addr Data Addr Data Addr Data
Addr
Data
Addr
Data
Addr
Data
RD
(BA)X0E (Note 10) (BA)X0F
00
SecSi Sector Factory
Protect (8)
4
555
AA
2AA
55
555
90
X03
(see
note 8)
Sector Group Protect
Verify (9)
4
555
AAA
2AA
55
555
90
(SA)X02
XX00/
XX01
Program
4
555
AA
2AA
55
555
A0
PA
PD
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Program/Erase Suspend (11)
1
BA
B0
Program/Erase Resume (12)
1
BA
30
CFI Query (13)
1
55
98
Accelerated Program (15)
2
XX
A0
PA
PD
Unlock Bypass Entry (15)
3
555
AA
2AA
55
555
20
Unlock Bypass Program (15)
2
XX
A0
PA
PD
XX
10
XXX
00
Unlock Bypass Erase (15)
2
XX
80
Unlock Bypass CFI (13, 15)
1
XX
98
Unlock Bypass Reset (15)
2
XXX
90
Legend:
BA = Address of bank switching to autoselect mode, bypass mode, or
erase operation. Determined by A22:A20, (A21:A20 for PDL129) see
Tables 4 and 5 for more detail.
PA = Program Address (A22:A0) (A21:A0 for PDL129). Addresses
latch on falling edge of WE# or CE#f1/CE#f2 (PDL129 only) pulse,
whichever happens later.
PD = Program Data (DQ15:DQ0) written to location PA. Data latches
on rising edge of WE# or CE#f1/CE#f2 (PDL129 only) pulse,
whichever happens first.
RA = Read Address (A22:A0) (A21:A0 for PDL129).
RD = Read Data (DQ15:DQ0) from location RA.
SA = Sector Address (A22:A12) (A21:A12 for PDL129) for verifying (in
autoselect mode) or erasing.
WD = Write Data. See “Configuration Register” definition for specific
write data. Data latched on rising edge of WE#.
X = Don’t care
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
8. The data is C0h for factory or customer locked and 80h for factory
locked.
3. Shaded cells in table denote read cycles. All other cycles are
write operations.
9. The data is 00h for an unprotected sector group and 01h for a
protected sector group.
4. During unlock and command cycles, when lower address bits are
555 or 2AAh as shown in table, address bits higher than A11
(except where BA is required) and data bits higher than DQ7 are
don’t cares.
10. Device ID must be read across cycles 4, 5, and 6. 20 for
Am29PDL127H and 21 for Am29PDL129H.
5. No unlock or command cycles required when bank is reading
array data.
6. The Reset command is required to return to reading array (or to
erase-suspend-read mode if previously in Erase Suspend) when
bank is in autoselect mode, or if DQ5 goes high (while bank is
providing status information).
7. Fourth cycle of autoselect command sequence is a read cycle.
System must provide bank address to obtain manufacturer ID or
device ID information. See Autoselect Command Sequence
section for more information.
56
11. System may read and program in non-erasing sectors, or enter
autoselect mode, when in Program/Erase Suspend mode.
Program/Erase Suspend command is valid only during a sector
erase operation, and requires bank address.
12. Program/Erase Resume command is valid only during Erase
Suspend mode, and requires bank address.
13. Command is valid when device is ready to read array data or
when device is in autoselect mode.
14. WP#/ACC must be at VID during the entire operation of command.
15. Unlock Bypass Entry command is required prior to any Unlock
Bypass operation. Unlock Bypass Reset command is required to
return to the reading array.
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
Table 17.
I N F O R M A T I O N
Sector Protection Command Definitions
Cycles
Bus Cycles (Notes 1-4)
Command
(Notes)
Reset
1 XXX
Addr Data Addr Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
OW
RD(0)
Addr
Data
PWA[3]
PWD[3]
F0
SecSi Sector Entry 3
555
AA
2AA
55
555
88
SecSi Sector Exit
4
555
AA
2AA
55
555
90
XX
00
SecSi Protection
Bit Program (5, 6)
6
555
AA
2AA
55
555
60
OW
68
OW
48
SecSi Protection
Bit Status
5
555
AA
2AA
55
555
60
OW
48
OW
RD(0)
Password Program
4
(5, 7, 8)
555
AA
2AA
55
555
38
XX[0-3]
PD[0-3]
Password Verify
(6, 8, 9)
4
555
AA
2AA
55
555
C8
PWA[0-3]
PWD[0-3]
Password Unlock
(7, 10, 11)
7
555
AA
2AA
55
555
28
PWA[0]
PWD[0]
PWA[1]
PWD[1]
PWA[2]
PWD[2]
PPB Program (5, 6,
6
12, 17)
555
AA
2AA
55
555
60
(SA)WP
68
(SA)WP
48
(SA)WP
RD(0)
PPB Status
5
555
AA
2AA
55
555
60
(SA)WP
48
(SA)WP
RD (0)
All PPB Erase (5,
6, 13, 14)
6
555
AA
2AA
55
555
60
WP
60
(SA)
40
(SA)WP
RD(0)
PPB Lock Bit Set
(17)
3
555
AA
2AA
55
555
78
PPB Lock Bit
Status (15)
4
555
AA
2AA
55
555
58
SA
RD(1)
X1
PL
RD(0)
SL
RD(0)
DYB Write (7)
4
555
AA
2AA
55
555
48
SA
DYB Erase (7)
4
555
AA
2AA
55
555
48
SA
X0
DYB Status (6, 18) 4
555
AA
2AA
55
555
58
SA
RD(0)
PPMLB Program
(5, 6, 12)
6
555
AA
2AA
55
555
60
PL
68
PL
48
PPMLB Status (5)
5
555
AA
2AA
55
555
60
PL
48
PL
RD(0)
SPMLB Program
(5, 6, 12)
6
555
AA
2AA
55
555
60
SL
68
SL
48
SPMLB Status (5)
5
555
AA
2AA
55
555
60
SL
48
SL
RD(0)
Legend:
DYB = Dynamic Protection Bit
OW = Address (A7:A0) is (00011010)
PD[3:0] = Password Data (1 of 4 portions)
PPB = Persistent Protection Bit
PWA = Password Address. A1:A0 selects portion of password.
PWD = Password Data being verified.
PL = Password Protection Mode Lock Address (A7:A0) is (00001010)
RD(0) = Read Data DQ0 for protection indicator bit.
RD(1) = Read Data DQ1 for PPB Lock status.
SA = Sector Address where security command applies. Address bits
A21:A12 uniquely select any sector.
SL = Persistent Protection Mode Lock Address (A7:A0) is (00010010)
WP = PPB Address (A7:A0) is (00000010) (NoteTable.16
31096a1.fm)
X = Don’t care
PPMLB = Password Protection Mode Locking Bit
SPMLB = Persistent Protection Mode Locking Bit
1.
See Table 1 for description of bus operations.
2. All values are in hexadecimal.
10. The password is written over four consecutive cycles, at
addresses 0-3.
3. Shaded cells in table denote read cycles. All other cycles are
write operations.
11. A 2 µs timeout is required between any two portions of password.
4. During unlock and command cycles, when lower address bits are
555 or 2AAh as shown in table, address bits higher than A11
(except where BA is required) and data bits higher than DQ7 are
don’t cares.
13. A 1.2 ms timeout is required between cycles 4 and 5.
5. The reset command returns device to reading array.
6. Cycle 4 programs the addressed locking bit. Cycles 5 and 6
validate bit has been fully programmed when DQ0 = 1. If DQ0 = 0
in cycle 6, program command must be issued and verified again.
7. Data is latched on the rising edge of WE#.
8. Entire command sequence must be entered for each portion of
password.
9. Command sequence returns FFh if PPMLB is set.
12. A 100 µs timeout is required between cycles 4 and 5.
14. Cycle 4 erases all PPBs. Cycles 5 and 6 validate bits have been
fully erased when DQ0 = 0. If DQ0 = 1 in cycle 6, erase command
must be issued and verified again. Before issuing erase
command, all PPBs should be programmed to prevent PPB
overerasure.
15. DQ1 = 1 if PPB locked, 0 if unlocked.
16. For PDL128G and PDL640G, the WP address is 0111010. The
EP address (PPB Erase Address) is 1111010.
17. Following the final cycle of the command sequence, the user must
write the first three cycles of the Autoselect command and then
write a Reset command.
18. If checking the DYB status of sectors in multiple banks, the user
must follow Note 17 before crossing a bank boundary.
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
57
A D V A N C E
I N F O R M A T I O N
WRITE OPERATION STATUS
The device provides several bits to determine the status of a
program or erase operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 18 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a method for
determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether
an Embedded Program or Erase operation is in progress or
has been completed.
pleted the program or erase operation and DQ7 has
valid data, the data outputs on DQ15–DQ0 may be still
invalid. Valid data on DQ15–DQ0 will appear on successive read cycles.
Table 18 shows the outputs for Data# Polling on DQ7.
Figure 6 shows the Data# Polling algorithm. Figure 6
in the AC Characteristics section shows the Data#
Polling timing diagram.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Program or Erase algorithm is in
progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final
WE# pulse in the command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to
DQ7. This DQ7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to
DQ7. The system must provide the program address to
read valid status information on DQ7. If a program address
falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to the
read mode.
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 400 µs, then the
bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ15–DQ0 on the following read cycles. Just prior to
the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with
DQ15–DQ0 while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has com-
58
START
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Figure 6. Data# Polling Algorithm
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the standby
mode, or one of the banks is in the erase-suspend-read mode.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Table 18 shows the outputs for Toggle Bit I on DQ6.
Figure 7 shows the toggle bit algorithm. Figure 21 in
the “AC Characteristics” section shows the toggle bit
timing diagrams. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. See also the
subsection on DQ2: Toggle Bit II.
START
Read Byte
(DQ7–DQ0)
Address =VA
Table 18 shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE#f1 to control the read cycles. When the operation
is complete, DQ6 stops toggling.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles for approximately 400 µs, then returns to reading
array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system
can use DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
Read Byte
(DQ7–DQ0)
Address =VA
Toggle Bit
= Toggle?
Yes
No
DQ5 = 1?
Yes
Read Byte Twice
(DQ7–DQ0)
Address = VA
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if DQ5
= “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
Figure 7.
February 5, 2004
No
Am75PDL191CHH/Am75PDL193CHH
Toggle Bit Algorithm
59
A D V A N C E
I N F O R M A T I O N
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE#f1 to
control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 18 to compare outputs for DQ2 and DQ6.
Figure 7 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsection.
Figure 21 shows the toggle bit timing diagram. Figure
22 shows the differences between DQ2 and DQ6 in
graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 7 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically,
the system would note and store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the device did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 7).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under these
conditions DQ5 produces a “1,” indicating that the program
or erase cycle was not successfully completed.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.”
Under both these conditions, the system must write
the reset command to return to the read mode (or to
the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode).
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase command. When the time-out period is complete, DQ3
switches from a “0” to a “1.” See also the Sector Erase
Command Sequence section.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
device will accept additional sector erase commands.
To ensure the command has been accepted, the system software should check the status of DQ3 prior to
and following each subsequent sector erase command. If DQ3 is high on the second status check, the
last command might not have been accepted.
Table 18 shows the status of DQ3 relative to the other
status bits.
60
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
Table 18.
Standard
Mode
Erase
Suspend
Mode
Status
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Erase-Suspend- Suspended Sector
Read
Non-Erase
Suspended Sector
Erase-Suspend-Program
I N F O R M A T I O N
Write Operation Status
DQ7
(Note 2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 1)
0
0
DQ3
N/A
1
DQ2
(Note 2)
No toggle
Toggle
RY/BY#
0
0
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm
is in progress. The device outputs array data if the system addresses a non-busy bank.
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
61
A D V A N C E
I N F O R M A T I O N
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –55°C to +125°C
20 ns
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . . –40°C to +85°C
+0.8 V
Voltage with Respect to Ground
–0.5 V
VCCf, VCCs (Note 1) . . . . . . . . . . . . –0.5 V to +4.0 V
RESET# (Note 2) . . . . . . . . . . . .–0.5 V to +12.5 V
20 ns
–2.0 V
WP#/ACC . . . . . . . . . . . . . . . . . . –0.5 V to +10.5 V
20 ns
All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
overshoot V SS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
See Figure 8. During voltage transitions, input or I/O pins
may overshoot to VCC +2.0 V for periods up to 20 ns. See
Figure 9.
2. Minimum DC input voltage on pins RESET#, and
WP# /ACC is –0 .5 V. D ur ing volt age trans itions,
WP#/ACC, and RESET# may overshoot VSS to –2.0 V for
periods of up to 20 ns. See Figure 8. Maximum DC input
voltage on pin RESET# is +12.5 V which may overshoot
to +14.0 V for periods up to 20 ns. Maximum DC input
voltage on WP#/ACC is +9.5 V which may overshoot to
+12.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Figure 8. Maximum Negative
Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
20 ns
20 ns
Figure 9. Maximum Positive
Overshoot Waveform
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
devices that are developed by a third party (‘third-party
components”).
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –25°C to +85°C
VCCf/VCCs Supply Voltages
VCCf/VCCs for standard voltage range . . 2.7 V to 3.3 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
ESD IMMUNITY
Spansion Flash memory Multi-Chip Products (MCPs)
may contain component devices that are developed by
FASL LLC (“Spansion components”) and component
62
Spansion components are tested and guaranteed to
the ESD immunity levels listed in the corresponding
Spansion Flash memory Qualification Database.
Third-party components are neither tested nor guaranteed by FASL LLC for ESD immunity. However, ESD
test results for third-party components may be available from the component manufacturer. Component
manufacturer contact information is listed in the Spansion MCP Qualification Report, when available.
The Spansion Flash memory Qualification Database
and Spansion MCP Qualification Report are available
from AMD and Fujitsu sales offices.
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
February 5, 2004
I N F O R M A T I O N
Am75PDL191CHH/Am75PDL193CHH
63
A D V A N C E
I N F O R M A T I O N
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Typ
Max
Unit
±1.0
µA
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9, OE#, RESET# Input Load Current
VCC = VCC max; VID= 12.5 V
35
µA
ILR
Reset Leakage Current
VCC = VCC max; VID= 12.5 V
35
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, OE# = VIH
VCC = VCC max
±1.0
µA
ICC1
VCC Active Read Current (Notes Table.1
31096a1.fm, 2, 3)
OE# = VIH, VCC = VCC max
(Note 1)
ICC2
VCC Active Write Current (Notes Table.1
31096a1.fm, 3, 4)
ICC3
5 MHz
20
30
10 MHz
45
55
OE# = VIH, WE# = VIL
15
25
mA
VCC Standby Current (Note 3)
CE#f1, CE#f2 (PDL129 only),
RESET#, WP/ACC# = VIO ± 0.3 V
1
5
µA
ICC4
VCC Reset Current (Note 3)
RESET# = VSS ± 0.3 V, CE# = VSS
1
5
µA
ICC5
Automatic Sleep Mode (Notes 3, 5)
VIH = VIO ± 0.3 V;
VIL = VSS ± 0.3 V, CE# = VSS
1
5
µA
ICC6
VCC Active Read-While-Program Current
(Notes 1, 2, 3)
OE# = VIH
Word
21
45
mA
ICC7
VCC Active Read-While-Erase Current
(Notes 1, 2, 3)
OE# = VIH
Word
21
45
mA
ICC8
VCC Active Program-While-EraseSuspended Current (Notes 1, 3, 6)
OE# = VIH
17
25
mA
VIL
Input Low Voltage
VIO = 2.7–3.6 V
–0.5
0.8
V
mA
VIH
Input High Voltage
VIO = 2.7–3.6 V
2.0
VCC+0.3
V
VHH
Voltage for ACC Program Acceleration
VCC = 3.0 V ± 10%
8.5
9.5
V
VID
Voltage for Autoselect and Temporary
Sector Unprotect
VCC = 3.0 V ± 10%
11.5
12.5
V
VOL
Output Low Voltage
IOL = 2.0 mA, VCC = VCC min
0.4
V
VOH
Output High Voltage
IOH = –2.0 mA, VCC = VCC min
VLKO
Low VCC Lock-Out Voltage (Note 6)
Notes:
1. Valid CE#f1/CE#f2 conditions (PDL129 only): (CE#f1= VIL, CE#f2=
VIH) or (CE#f1= VIH, CE#f2= VIL)
2. The ICC current listed is typically less than 5 mA/MHz, with OE# at
VIH.
3. Maximum ICC specifications are tested with VCC = VCCmax.
2.4
2.3
V
2.5
V
4. ICC active while Embedded Erase or Embedded Program is in
progress.
5. Automatic sleep mode enables the low power mode when
addresses remain stable for tACC + 150 ns. Typical sleep mode
current is 1 µA.
6.
64
Min
Not 100% tested.
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
TEST CONDITIONS
Table 19.
3.3 V
2.7 kΩ
Device
Under
Test
CL
6.2 kΩ
Test Specifications
Test Condition
70
Output Load
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
70
pF
Input Rise and Fall Times
5
ns
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Figure 10.
Unit
Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
KS000010-PAL
3.0 V
Input
1.5 V
Measurement Level
1.5 V
Output
0.0 V
Figure 11.
February 5, 2004
Input Waveforms and Measurement Levels
Am75PDL191CHH/Am75PDL193CHH
65
A D V A N C E
I N F O R M A T I O N
pSRAM AC CHARACTERISTICS
CE#1ps Timing
Parameter
Test Setup
JEDEC
Std
Description
—
tCCR
CE#1ps Recover Time
—
Min
All Speeds
Unit
0
ns
CE#1ps
tCCR
tCCR
CE2ps
Figure 12. Timing Diagram for Alternating
Between Pseudo SRAM and Flash
66
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Read-Only Operations – Am29PDL127H
Parameter
All Speeds
JEDEC
Std.
Description
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tPACC
Test Setup
70
Unit
Min
70
ns
CE#f1, OE# = VIL
Max
70
ns
OE# = VIL
Max
70
ns
Page Access Time
Max
30
ns
tGLQV
tOE
Output Enable to Output Delay
Max
30
ns
tEHQZ
tDF
Chip Enable to Output High Z (Note 1, 3)
Max
16
ns
tGHQZ
tDF
Output Enable to Output High Z (Notes 1, 3)
Max
16
ns
tAXQX
tOH
Output Hold Time From Addresses, CE#f1 or
OE#, Whichever Occurs First (Notes 3)
Min
5
ns
Read
Min
0
ns
tOEH
Output Enable Hold Time
(Note 1)
Toggle and
Data# Polling
Min
10
ns
Notes:
1. Not 100% tested.
2. See Figure 10 and Table 19 for test specifications
3. Measurements performed by placing a 50 ohm termination on the
data pin with a bias of VCC/2. The time from OE# high to the data
bus driven to VCC/2 is taken as tDF.
Read-Only Operations – Am29PDL129H
Parameter
All Speeds
JEDEC
Std.
Description
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay (Note 3)
tELQV
tCE
Chip Enable to Output Delay (Note 4)
tPACC
Test Setup
70
Unit
Min
70
ns
CE#f1, OE# = VIL
Max
70
ns
OE# = VIL
Max
70
ns
Page Access Time
Max
30
ns
tGLQV
tOE
Output Enable to Output Delay
Max
30
ns
tEHQZ
tDF
Chip Enable to Output High Z (Notes 1, 5, 6)
Max
16
ns
tGHQZ
tDF
Output Enable to Output High Z (Notes 1, 5)
Max
16
ns
tAXQX
tOH
Output Hold Time From Addresses,
CE#f1/CE#f2 or OE#, Whichever Occurs First
(Notes 5, 6)
Min
5
ns
Read
Min
0
ns
tOEH
Output Enable Hold Time
(Note 1)
Toggle and
Data# Polling
Min
10
ns
Notes:
1.
Not 100% tested.
2. See Figure 10 and Table 19 for test specifications
3. Valid CE#f1/CE#f2 conditions: (CE#f1= VIL, CE#f2= VIH) or
(CE#f1= VIH, CE#f2=VIL).
4. Valid CE#f1/CE#f2 transitions: (CE#f1= CE#f2= VIH) to (CE#f1=
VIL, CE#f2=VIH) or (CE#f1= VIH, CE#f2=VIL).
February 5, 2004
5. Measurements performed by placing a 50 ohm termination on the
data pin with a bias of VCC/2. The time from OE# high to the data
bus driven to VCC/2 is taken as tDF.
6. Valid CE#f1/CE#f2 transitions: (CE#f1= VIL, CE#f2= VIH) or
(CE#f1= VIH, CE#f2=VIL) to (CE#f1= CE#f2= VIH).
Am75PDL191CHH/Am75PDL193CHH
67
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
tRC
Addresses Stable
Addresses
tACC
CE#f1
or CE#f2
(PDL 129 only)
OE#
tRH
tRH
tDF
tOE
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 13.
Read Operation Timings
Same Page
Addresses
A2-A0
Aa
tACC
Data
Ab
tPACC
Qa
Ad
Ac
tPACC
Qb
tPACC
Qc
Qd
CE# f1
or CE#f2 (PDL129 only)
OE#
Figure 14.
Page Read Operation Timings
Notes: During CE#f1 transitions, CE#f2= VIH; During CE#f2 transitions, CE#f1= VIH
68
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#f1,
CE#f2 (PDL129 only),
OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#1
tRB
CE#f1,
CE#f2 (PDL129 only),
OE#
RESET#
tRP
Figure 15.
February 5, 2004
Reset Timings
Am75PDL191CHH/Am75PDL193CHH
69
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Erase and Program Operations
Parameter
All
Speeds
Unit
Min
65
ns
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tAH
Address Hold Time
Min
35
ns
tAHT
Address Hold Time From CE#1f or OE# high
during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
30
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
10
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time (CE#f1 to WE#)
Min
0
ns
tELWL
tCS
CE#f1 Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time (CE#f1 to WE#)
Min
0
ns
tWHEH
tCH
CE#f1 Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
40
ns
tWHDL
tWPH
Write Pulse Width High
Min
25
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
Typ
6
µs
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
tAVWL
tAS
tWLAX
tWHWH1
tWHWH1
Programming Operation (Note 2)
tWHWH1
tWHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Max
90
ns
tBUSY
Word
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
70
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#f1
or CE#f2
(PDL129 only)
tCH
tGHWL
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
tBUSY
DOUT
tRB
RY/BY#
VCCf
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
3. For PDL129 during CE#f1 transitions the other CE#f1 pin = VIH.
Figure 16.
Program Operation Timings
VHH
WP#/ACC
VIL or VIH
VIL or VIH
tVHH
tVHH
Figure 17.
February 5, 2004
Accelerated Program Timing Diagram
Am75PDL191CHH/Am75PDL193CHH
71
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SADD
VA
555h for chip erase
tAH
CE#f1
(PDL129 only)
tGHWL
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCCf
Notes:
1. SADD = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Flash Write Operation Status”.
2. For PDL129 during CE#f1 transitions the other CE#f1 pin = VIH.
Figure 18.
72
Chip/Sector Erase Operation Timings
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Addresses
tWC
tWC
tRC
Valid PA
Valid RA
tWC
Valid PA
Valid PA
tAH
tCPH
tACC
tCE
CE#f1 or
CE#f2 (PDL129 only)
tCP
tOE
OE#
tOEH
tGHWL
tWP
WE#
tDF
tWPH
tDS
tOH
tDH
Valid
Out
Valid
In
Data
Valid
In
Valid
In
tSR/W
WE# Controlled Write Cycle
Read Cycle
Figure 19.
CE#f Controlled Write Cycles
Back-to-back Read/Write Cycle Timings
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#f1 or
CE#f2 (PDL129 only)
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ6–DQ0
Status Data
Status Data
True
Valid Data
High Z
True
Valid Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 20.
February 5, 2004
Data# Polling Timings (During Embedded Algorithms)
Am75PDL191CHH/Am75PDL193CHH
73
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#f1 or
CE#f2 (PDL129 only)
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
tOE
Valid Data
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 21.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE#f1 to
toggle DQ2 and DQ6.
Figure 22.
74
DQ2 vs. DQ6
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tVHH
VHH Rise and Fall Time (See Note)
Min
250
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
µs
tRRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect
Min
4
µs
Note: Not 100% tested.
VID
RESET#
VID
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#f1 or
CE#f2 (PDL129 only)
WE#
tRSP
tRRB
RY/BY#
Figure 23.
February 5, 2004
Temporary Sector Unprotect Timing Diagram
Am75PDL191CHH/Am75PDL193CHH
75
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
VID
VIH
RESET#
SADD,
A6, A1, A0
Valid*
Valid*
Sector/Sector Block Protect or Unprotect
Data
60h
60h
Valid*
Verify
40h
Status
Sector/Sector Block Protect: 150 µs,
Sector/Sector Block Unprotect: 15 ms
1 µs
CE#f1 or
CE#f1(PDL129 only)
WE#
OE#
1.
For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0, SADD = Sector Address.
2.
For PDL129 during CE#f1 transitions the other CE#f1 pin = VIH.
Figure 24. Sector/Sector Block Protect and
Unprotect Timing Diagram
76
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Parameter
All
Speeds
Unit
Min
70
ns
Address Setup Time
Min
0
ns
tAH
Address Hold Time
Min
35
ns
tDVEH
tDS
Data Setup Time
Min
30
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE#f Pulse Width
Min
40
ns
tEHEL
tCPH
CE#f Pulse Width High
Min
25
ns
tWHWH1
tWHWH1
Programming Operation
(Note 2)
Typ
6
µs
tWHWH1
tWHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
tAVWL
tAS
tELAX
Word
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
77
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SADD for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tCP
CE#f1 or
CE#f2 (PDL129 only)
tWS
tWHWH1 or 2
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SADD = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
Figure 25.
78
Flash Alternate CE# Controlled Write (Erase/Program) Operation Timings
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.4
5
sec
Chip Erase Time
108
Excludes 00h programming
prior to erasure (Note 4)
sec
Word Program Time
6
210
µs
Accelerated Word Program Time
4
120
µs
Chip Program Time (Note 3)
50
200
sec
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern. All values are subject to change.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles. All values are subject to change.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables
Table 16 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
PACKAGE PIN CAPACITANCE
Parameter
Symbol
CIN
Parameter Description
Input Capacitance
Test Setup
Typ
Max
Unit
VIN = 0
11
14
pF
VOUT = 0
12
16
pF
COUT
Output Capacitance
CIN2
Control Pin Capacitance
VIN = 0
14
16
pF
CIN3
WP#/ACC Pin Capacitance
VIN = 0
17
20
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
FLASH DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
79
A D V A N C E
I N F O R M A T I O N
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information
needed to execute the command. The contents of the
Table 1.
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Am29DL640H Device Bus Operations
CE#
OE#
WE#
RESET#
WP#/ACC
Addresses
(Note 2)
DQ15–DQ8
DQ7–
DQ0
Read
L
L
H
H
L/H
AIN
DOUT
DOUT
Write
L
H
L
H
(Note 3)
AIN
DIN
DIN
VCC ±
0.3 V
X
X
VCC ±
0.3 V
L/H
X
High-Z
High-Z
Output Disable
L
H
H
H
L/H
X
High-Z
High-Z
Reset
X
X
X
L
L/H
X
High-Z
High-Z
Sector Protect (Note 2)
L
H
L
VID
L/H
SA, A6 = L,
A1 = H, A0 = L
X
DIN
Sector Unprotect (Note 2)
L
H
L
VID
(Note 3)
SA, A6 = H,
A1 = H, A0 = L
X
DIN
Temporary Sector
Unprotect
X
X
X
VID
(Note 3)
AIN
DIN
DIN
Operation
Standby
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SA = Sector Address,
AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A21:A0 in word mode.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
3. If WP#/ACC = VIL, sectors 0, 1, 140, and 141 remain protected. If WP#/ACC = VIH, protection on sectors 0, 1, 140, and 141
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection
and Unprotection”. If WP#/ACC = VHH, all sectors will be unprotected.
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ15–DQ0 are active and controlled by
CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ7–DQ0 are
active and controlled by CE# and OE#. The data I/O
pins DQ14–DQ8 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
80
control and selects the device. OE# is the output control and gates array data to the output pins. WE#
should remain at V IH . The BYTE# pin determines
whether the device outputs array data in words or
bytes.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. Each bank remains
enabled for read access until the command register
contents are altered.
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
Refer to the AC AC Characteristics table for timing
specifications and to Figure 13 for the timing diagram.
ICC1 in the DC Characteristics table represents the active current specification for reading array data.
nected; inconsistent behavior of the device may result.
See “Write Protect (WP#)” on page 87 for related information.
Autoselect Functions
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. Refer to “Requirements for Reading Array
Data” for more information.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required
to program a word or byte, instead of four. The “Word
Program Command Sequence” section has details on
programming data to the device using both standard
and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 2 indicates the address
space that each sector occupies. Similarly, a “sector
address” is the address bits required to uniquely select
a sector. The “Command Definitions” section has details on erasing a sector or the entire chip, or suspending/resuming the erase operation.
The device address space is divided into four banks. A
“bank address” is the address bits required to uniquely
select a bank.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The AC
Characteristics section contains timing specification
tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This is one of two functions
provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput
at the factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to normal operation. Note that VHH must not be asserted on
WP#/ACC for operations other than accelerated programming, or device damage may result. In addition,
the WP#/ACC pin must not be left floating or uncon-
February 5, 2004
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ15–DQ0. Standard read cycle timings apply in
this mode. Refer to the Autoselect Mode and Autoselect Command Sequence sections for more information.
Simultaneous Read/Write Operations with
Zero Latency
This device is capable of reading data from one bank
of memory while programming or erasing in the other
bank of memory. An erase operation may also be suspended to read from or program to another location
within the same bank (except the sector being
erased). Figure 19 shows how read and write cycles
may be initiated for simultaneous operation with zero
latency. ICC6 and ICC7 in the DC Characteristics table
represent the current specifications for read-while-program and read-while-erase, respectively.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
VCC ± 0.3 V, the device will be in the standby mode,
but the standby current will be greater. The device requires standard access time (t CE ) for read access
when the device is in either of these standby modes,
before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
I CC3 in the DC Characteristics table represents the
standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for t ACC +
30 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard address access timings provide new data when ad-
Am75PDL191CHH/Am75PDL193CHH
81
A D V A N C E
I N F O R M A T I O N
dresses are changed. While in sleep mode, output
data is latched and always available to the system.
I CC5 in the DC Characteristics table represents the
automatic sleep mode current specification.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
RESET#: Hardware Reset Pin
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH.
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS±0.3 V, the standby current will
be greater.
Table 2.
Bank
Bank 1
82
Refer to the pSRAM AC Characteristics tables for RESET# parameters and to Figure 15 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high
impedance state.
Am29DL640H Sector Architecture
Sector
Sector Address
A21–A12
Sector Size
(Kwords)
(x16)
Address Range
SA0
0000000000
4
00000h–00FFFh
SA1
0000000001
4
01000h–01FFFh
SA2
0000000010
4
02000h–02FFFh
SA3
0000000011
4
03000h–03FFFh
SA4
0000000100
4
04000h–04FFFh
SA5
0000000101
4
05000h–05FFFh
SA6
0000000110
4
06000h–06FFFh
SA7
0000000111
4
07000h–07FFFh
SA8
0000001xxx
32
08000h–0FFFFh
SA9
0000010xxx
32
10000h–17FFFh
SA10
0000011xxx
32
18000h–1FFFFh
SA11
0000100xxx
32
20000h–27FFFh
SA12
0000101xxx
32
28000h–2FFFFh
SA13
0000110xxx
32
30000h–37FFFh
SA14
0000111xxx
32
38000h–3FFFFh
SA15
0001000xxx
32
40000h–47FFFh
SA16
0001001xxx
32
48000h–4FFFFh
SA17
0001010xxx
32
50000h–57FFFh
SA18
0001011xxx
32
58000h–5FFFFh
SA19
0001100xxx
32
60000h–67FFFh
SA20
0001101xxx
32
68000h–6FFFFh
SA21
0001101xxx
32
70000h–77FFFh
SA22
0001111xxx
32
78000h–7FFFFh
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
Table 2.
Bank
Bank 2
February 5, 2004
I N F O R M A T I O N
Am29DL640H Sector Architecture (Continued)
Sector
Sector Address
A21–A12
Sector Size
(Kwords)
SA23
0010000xxx
32
80000h–87FFFh
SA24
0010001xxx
32
88000h–8FFFFh
SA25
0010010xxx
32
90000h–97FFFh
SA26
0010011xxx
32
98000h–9FFFFh
SA27
0010100xxx
32
A0000h–A7FFFh
SA28
0010101xxx
32
A8000h–AFFFFh
SA29
0010110xxx
32
B0000h–B7FFFh
SA30
0010111xxx
32
B8000h–BFFFFh
SA31
0011000xxx
32
C0000h–C7FFFh
SA32
0011001xxx
32
C8000h–CFFFFh
SA33
0011010xxx
32
D0000h–D7FFFh
SA34
0011011xxx
32
D8000h–DFFFFh
SA35
0011000xxx
32
E0000h–E7FFFh
SA36
0011101xxx
32
E8000h–EFFFFh
SA37
0011110xxx
32
F0000h–F7FFFh
SA38
0011111xxx
32
F8000h–FFFFFh
SA39
0100000xxx
32
F9000h–107FFFh
SA40
0100001xxx
32
108000h–10FFFFh
SA41
0100010xxx
32
110000h–117FFFh
SA42
0101011xxx
32
118000h–11FFFFh
SA43
0100100xxx
32
120000h–127FFFh
SA44
0100101xxx
32
128000h–12FFFFh
SA45
0100110xxx
32
130000h–137FFFh
SA46
0100111xxx
32
138000h–13FFFFh
SA47
0101000xxx
32
140000h–147FFFh
SA48
0101001xxx
32
148000h–14FFFFh
SA49
0101010xxx
32
150000h–157FFFh
SA50
0101011xxx
32
158000h–15FFFFh
SA51
0101100xxx
32
160000h–167FFFh
SA52
0101101xxx
32
168000h–16FFFFh
SA53
0101110xxx
32
170000h–177FFFh
SA54
0101111xxx
32
178000h–17FFFFh
SA55
0110000xxx
32
180000h–187FFFh
SA56
0110001xxx
32
188000h–18FFFFh
SA57
0110010xxx
32
190000h–197FFFh
SA58
0110011xxx
32
198000h–19FFFFh
SA59
0100100xxx
32
1A0000h–1A7FFFh
SA60
0110101xxx
32
1A8000h–1AFFFFh
SA61
0110110xxx
32
1B0000h–1B7FFFh
SA62
0110111xxx
32
1B8000h–1BFFFFh
SA63
0111000xxx
32
1C0000h–1C7FFFh
SA64
0111001xxx
32
1C8000h–1CFFFFh
SA65
0111010xxx
32
1D0000h–1D7FFFh
SA66
0111011xxx
32
1D8000h–1DFFFFh
SA67
0111100xxx
32
1E0000h–1E7FFFh
SA68
0111101xxx
32
1E8000h–1EFFFFh
SA69
0111110xxx
32
1F0000h–1F7FFFh
SA70
0111111xxx
32
1F8000h–1FFFFFh
Am75PDL191CHH/Am75PDL193CHH
(x16)
Address Range
83
A D V A N C E
Table 2.
Bank
Bank 3
84
I N F O R M A T I O N
Am29DL640H Sector Architecture (Continued)
Sector
Sector Address
A21–A12
Sector Size
(Kwords)
(x16)
Address Range
SA71
1000000xxx
32
200000h–207FFFh
SA72
1000001xxx
32
208000h–20FFFFh
SA73
1000010xxx
32
210000h–217FFFh
SA74
1000011xxx
32
218000h–21FFFFh
SA75
1000100xxx
32
220000h–227FFFh
SA76
1000101xxx
32
228000h–22FFFFh
SA77
1000110xxx
32
230000h–237FFFh
SA78
1000111xxx
32
238000h–23FFFFh
SA79
1001000xxx
32
240000h–247FFFh
SA80
1001001xxx
32
248000h–24FFFFh
SA81
1001010xxx
32
250000h–257FFFh
SA82
1001011xxx
32
258000h–25FFFFh
SA83
1001100xxx
32
260000h–267FFFh
SA84
1001101xxx
32
268000h–26FFFFh
SA85
1001110xxx
32
270000h–277FFFh
SA86
1001111xxx
32
278000h–27FFFFh
SA87
1010000xxx
32
280000h–28FFFFh
SA88
1010001xxx
32
288000h–28FFFFh
SA89
1010010xxx
32
290000h–297FFFh
SA90
1010011xxx
32
298000h–29FFFFh
SA91
1010100xxx
32
2A0000h–2A7FFFh
SA92
1010101xxx
32
2A8000h–2AFFFFh
SA93
1010110xxx
32
2B0000h–2B7FFFh
SA94
1010111xxx
32
2B8000h–2BFFFFh
SA95
1011000xxx
32
2C0000h–2C7FFFh
SA96
1011001xxx
32
2C8000h–2CFFFFh
SA97
1011010xxx
32
2D0000h–2D7FFFh
SA98
1011011xxx
32
2D8000h–2DFFFFh
SA99
1011100xxx
32
2E0000h–2E7FFFh
SA100
1011101xxx
32
2E8000h–2EFFFFh
SA101
1011110xxx
32
2F0000h–2FFFFFh
SA102
1011111xxx
32
2F8000h–2FFFFFh
SA103
1100000xxx
32
300000h–307FFFh
SA104
1100001xxx
32
308000h–30FFFFh
SA105
1100010xxx
32
310000h–317FFFh
SA106
1100011xxx
32
318000h–31FFFFh
SA107
1100100xxx
32
320000h–327FFFh
SA108
1100101xxx
32
328000h–32FFFFh
SA109
1100110xxx
32
330000h–337FFFh
SA110
1100111xxx
32
338000h–33FFFFh
SA111
1101000xxx
32
340000h–347FFFh
SA112
1101001xxx
32
348000h–34FFFFh
SA113
1101010xxx
32
350000h–357FFFh
SA114
1101011xxx
32
358000h–35FFFFh
SA115
1101100xxx
32
360000h–367FFFh
SA116
1101101xxx
32
368000h–36FFFFh
SA117
1101110xxx
32
370000h–377FFFh
SA118
1101111xxx
32
378000h–37FFFFh
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
Table 2.
Bank
Bank 4
I N F O R M A T I O N
Am29DL640H Sector Architecture (Continued)
Sector
Sector Address
A21–A12
Sector Size
(Kwords)
SA119
1110000xxx
32
380000h–387FFFh
SA120
1110001xxx
32
388000h–38FFFFh
SA121
1110010xxx
32
390000h–397FFFh
SA122
1110011xxx
32
398000h–39FFFFh
SA123
1110100xxx
32
3A0000h–3A7FFFh
SA124
1110101xxx
32
3A8000h–3AFFFFh
SA125
1110110xxx
32
3B0000h–3B7FFFh
SA126
1110111xxx
32
3B8000h–3BFFFFh
SA127
1111000xxx
32
3C0000h–3C7FFFh
SA128
1111001xxx
32
3C8000h–3CFFFFh
SA129
1111010xxx
32
3D0000h–3D7FFFh
SA130
1111011xxx
32
3D8000h–3DFFFFh
SA131
1111100xxx
32
3E0000h–3E7FFFh
SA132
1111101xxx
32
3E8000h–3EFFFFh
SA133
1111110xxx
32
3F0000h–3F7FFFh
SA134
1111111000
4
3F8000h–3F8FFFh
SA135
1111111001
4
3F9000h–3F9FFFh
SA136
1111111010
4
3FA000h–3FAFFFh
SA137
1111111011
4
3FB000h–3FBFFFh
SA138
1111111100
4
3FC000h–3FCFFFh
SA139
1111111101
4
3FD000h–3FDFFFh
SA140
1111111110
4
3FE000h–3FEFFFh
SA141
1111111111
4
3FF000h–3FFFFFh
Table 3.
Bank
1
2
3
4
Bank Address
A21–A19
000
001, 010, 011
100, 101, 110
111
Table 4.
SecSiTM Sector Addresses
Device
Sector Size
(x16)
Address Range
Am29DL640H
256 bytes
00000h–0007Fh
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment to automatically match a device to be programmed with its c orresponding programm ing
algorithm. However, the autoselect codes can also be
accessed in-system through the command register.
When using programming equipment, the autoselect
mode requires V ID on address pin A9. Address pins
must be as shown in Table 5. In addition, when verifying sector protection, the sector address must appear
on the appropriate highest order address bits (see
Table 2). Table 5 shows the remaining address bits
that are don’t care. When all necessary bits have been
February 5, 2004
(x16)
Address Range
set as required, the programming equipment may then
read the corresponding identifier code on DQ7–DQ0.
However, the autoselect codes can also be accessed
in-system through the command register, for instances
when the Am29DL640 is erased or programmed in a
system without access to high voltage on the A9 pin.
The command sequence is illustrated in Table 11.
Note that if a Bank Address (BA) on address bits A21,
A20, and A19 is asserted during the third write cycle of
the autoselect command, the host system can read
autoselect data from that bank and then immediately
read array data from the other bank, without exiting the
autoselect mode.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 11. This method
Am75PDL191CHH/Am75PDL193CHH
85
A D V A N C E
I N F O R M A T I O N
does not require V ID. Refer to the Autoselect Command Sequence section for more information.
86
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
Sector/Sector Block Protection and
Unprotection
(Note: For the following discussion, the term “sector”
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see Table
10).
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected
sectors. Sector protection/unprotection can be implemented via two methods.
Table 5. Am29DL640H Boot Sector/Sector Block
Addresses for Protection/Unprotection
Sector
A21–A12
Sector/
Sector Block Size
SA99–SA102
10111XXXXX
256 (4x64) Kbytes
SA103–SA106
11000XXXXX
256 (4x64) Kbytes
SA107–SA110
11001XXXXX
256 (4x64) Kbytes
SA111–SA114
11010XXXXX
256 (4x64) Kbytes
SA115–SA118
11011XXXXX
256 (4x64) Kbytes
SA119–SA122
11100XXXXX
256 (4x64) Kbytes
SA123–SA126
11101XXXXX
256 (4x64) Kbytes
SA127–SA130
11110XXXXX
256 (4x64) Kbytes
SA131–SA133
1111100XXX,
1111101XXX,
1111110XXX
192 (3x64) Kbytes
SA134
1111111000
8 Kbytes
SA135
1111111001
8 Kbytes
SA136
1111111010
8 Kbytes
SA137
1111111011
8 Kbytes
Sector
A21–A12
Sector/
Sector Block Size
SA138
1111111100
8 Kbytes
SA0
0000000000
8 Kbytes
SA139
1111111101
8 Kbytes
SA1
0000000001
8 Kbytes
SA140
1111111101
8 Kbytes
SA2
0000000010
8 Kbytes
SA141
1111111111
8 Kbytes
SA3
0000000011
8 Kbytes
SA4
0000000100
8 Kbytes
SA5
0000000101
8 Kbytes
SA6
0000000110
8 Kbytes
SA7
0000000111
8 Kbytes
SA8–SA10
0000001XXX,
0000010XXX,
0000011XXX,
192 (3x64) Kbytes
SA11–SA14
00001XXXXX
256 (4x64) Kbytes
SA15–SA18
00010XXXXX
256 (4x64) Kbytes
SA19–SA22
00011XXXXX
256 (4x64) Kbytes
SA23–SA26
00100XXXXX
256 (4x64) Kbytes
SA27-SA30
00101XXXXX
256 (4x64) Kbytes
SA31-SA34
00110XXXXX
256 (4x64) Kbytes
SA35-SA38
00111XXXXX
256 (4x64) Kbytes
SA39-SA42
01000XXXXX
256 (4x64) Kbytes
SA43-SA46
01001XXXXX
256 (4x64) Kbytes
SA47-SA50
01010XXXXX
256 (4x64) Kbytes
Sector protection/sector unprotection requires VID on
the RESET# pin only, and can be implemented either
in-system or via programming equipment. Figure 1
shows the algorithms and Figure 24 shows the timing
diagram. For sector unprotect, all unprotected sectors
must first be protected prior to the first sector unprotect write cycle. Note that the sector unprotect algorithm unprotects all sectors in parallel. All previously
protected sectors must be individually re-protected. To
change data in protected sectors efficiently, the temporary sector unprotect function is available. See
“Temporary Sector Unprotect”.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected or unprotected. See the Autoselect Mode section for details.
SA51-SA54
01011XXXXX
256 (4x64) Kbytes
SA55–SA58
01100XXXXX
256 (4x64) Kbytes
SA59–SA62
01101XXXXX
256 (4x64) Kbytes
Write Protect (WP#)
SA63–SA66
01110XXXXX
256 (4x64) Kbytes
SA67–SA70
01111XXXXX
256 (4x64) Kbytes
SA71–SA74
10000XXXXX
256 (4x64) Kbytes
The Write Protect function provides a hardware
method of protecting without using VID. This function is
one of two provided by the WP#/ACC pin.
SA75–SA78
10001XXXXX
256 (4x64) Kbytes
SA79–SA82
10010XXXXX
256 (4x64) Kbytes
SA83–SA86
10011XXXXX
256 (4x64) Kbytes
SA87–SA90
10100XXXXX
256 (4x64) Kbytes
SA91–SA94
10101XXXXX
256 (4x64) Kbytes
SA95–SA98
10110XXXXX
256 (4x64) Kbytes
February 5, 2004
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in sectors
0, 1, 140, and 141, independently of whether those
sectors were protected or unprotected using the
method described in “Sector/Sector Block Protection
and Unprotection”.
Am75PDL191CHH/Am75PDL193CHH
87
A D V A N C E
I N F O R M A T I O N
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether sectors 0, 1, 140, and 141
were last set to be protected or unprotected. That is,
sector protection or unprotection for these sectors depends on whether they were last protected or unprotected using the method described in “Sector/Sector
Block Protection and Unprotection”.
Note that the WP#/ACC pin must not be left floating or
unconnected; inconsistent behavior of the device may
result.
Table 6.
WP# Input
Voltage
WP#/ACC Modes
Device
Mode
VIL
Disables programming and erasing in
SA0, SA1, SA140, and SA141
VIH
Enables programming and erasing in
SA0, SA1, SA140, and SA141
VHH
Enables accelerated programming
(ACC). See “Accelerated Program
Operation” on page 20.
Temporary Sector Unprotect
(Note: For the following discussion, the term “sector”
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see Table
10).
This feature allows temporary unprotection of previously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected
sectors can be programmed or erased by selecting the
sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are
protected again. Figure 2 shows the algorithm, and
Figure 23 shows the timing diagrams, for this feature.
If the WP#/ACC pin is at VIL , sectors 0, 1, 140, and
141 will remain protected during the Temporary sector
Unprotect mode.
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected (If WP#/ACC = VIL,
sectors 0, 1, 140, and 141 will remain protected).
2. All previously protected sectors are protected once
again.
Figure 1.
88
Temporary Sector Unprotect Operation
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 4 µs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 4 µs
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Temporary Sector
Unprotect Mode
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A7-A0 =
00000010
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A7-A0 =
01000010
Wait 100 µs
Increment
PLSCNT
No
Verify Sector
Protect: Write 40h
to sector address
with A7-A0 =
00000010
Reset
PLSCNT = 1
Read from
sector address
with A7-A0 =
00000010
Wait 1.2 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A7-A0 =
00000010
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
Remove VID
from RESET#
No
Yes
Protect another
sector?
No
Write reset
command
Remove VID
from RESET#
Sector Protect
complete
Write reset
command
Device failed
Read from
sector address
with A7-A0 =
00000010
Data = 01h?
Sector Protect
complete
Sector Protect
Algorithm
PLSCNT
= 1000?
Data = 00h?
Yes
Yes
Remove VID
from RESET#
Write reset
command
Set up
next sector
address
No
Last sector
verified?
No
Yes
Remove VID
from RESET#
Sector Unprotect
complete
Write reset
command
Device failed
Sector Unprotect
complete
Sector Unprotect
Algorithm
Figure 2.
February 5, 2004
In-System Sector Protect/Unprotect Algorithms
Am75PDL191CHH/Am75PDL193CHH
89
A D V A N C E
I N F O R M A T I O N
SecSi™ (Secured Silicon) Sector
Flash Memory Region
The SecSi (Secured Silicon) Sector feature provides a
Flash memory region that enables permanent part
identification through an Electronic Serial Number
(ESN). The SecSi Sector is 256 bytes in length, and
uses a SecSi Sector Indicator Bit (DQ7) to indicate
whether or not the SecSi Sector is locked when
shipped from the factory. This bit is permanently set at
the factory and cannot be changed, which prevents
cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field.
AMD offers the device with the SecSi Sector either
fac t or y l ocke d or c u s t om e r l o ckabl e. T he fac tory-locked version is always protected when shipped
from the factory, and has the SecSi (Secured Silicon)
Sector Indicator Bit permanently set to a “1.” The customer-lockable version is shipped with the SecSi Sector unprotected, allowing customers to utilize the that
sector in any manner they choose. The customer-lockable version has the SecSi (Secured Silicon) Sector
Indicator Bit permanently set to a “0.” Thus, the SecSi
Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked.
The system accesses the SecSi Sector Secure
through a command sequence (see “Enter SecSi™
Sector/Exit SecSi Sector Command Sequence”). After
the system has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by
using the addresses normally occupied by the boot
sectors. This mode of operation continues until the
system issues the Exit SecSi Sector command sequence, or until power is removed from the device. On
power-up, or following a hardware reset, the device reverts to sending commands to the first 256 bytes of
Sector 0. Note that the ACC function and unlock bypass modes are not available when the SecSi Sector
is enabled.
Factory Locked: SecSi Sector Programmed and
Protected At the Factory
In a factory locked device, the SecSi Sector is protected when the device is shipped from the factory.
The SecSi Sector cannot be modified in any way. The
device is preprogrammed with both a random number
and a secure ESN. The 8-word random number is at
addresses 000000h–000007h in word mode (or
000000h–00000Fh in byte mode). The secure ESN is
90
programmed in the next 8 words at addresses
000008h–00000Fh (or 000010h–00001Fh in byte
mode). The device is available preprogrammed with
one of the following:
■ A random, secure ESN only
■ Customer code through the ExpressFlash service
■ Both a random, secure ESN and customer code
through the ExpressFlash service.
Customers may opt to have their code programmed by
AMD through the AMD ExpressFlash service. AMD
programs the customer’s code, with or without the random ESN. The devices are then shipped from AMD’s
factory with the SecSi Sector permanently locked.
Contact an AMD representative for details on using
AMD’s ExpressFlash service.
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the Factory
If the security feature is not required, the SecSi Sector
can be treated as an additional Flash memory space.
The SecSi Sector can be read any number of times,
but can be programmed and locked only once. Note
that the accelerated programming (ACC) and unlock
bypass functions are not available when programming
the SecSi Sector.
The SecSi Sector area can be protected using one of
the following procedures:
■ Write the three-cycle Enter SecSi Sector Region
command sequence, and then follow the in-system
sector protect algorithm as shown in Figure 1, except that RESET# may be at either VIH or VID. This
allows in-system protection of the SecSi Sector Region without raising any device pin to a high voltage.
Note that this method is only applicable to the SecSi
Sector.
■ To verify the protect/unprotect status of the SecSi
Sector, follow the algorithm shown in Figure 3.
Once the SecSi Sector is locked and verified, the system must write the Exit SecSi Sector Region command sequence to return to reading and writing the
remainder of the array.
The SecSi Sector lock must be used with caution
since, once locked, there is no procedure available for
unlocking the SecSi Sector area and none of the bits
in the SecSi Sector memory space can be modified in
any way.
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
START
RESET# =
VIH or VID
Wait 1 µs
Write 60h to
any address
Write 40h to SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Read from SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Figure 3.
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
Remove VIH or VID
from RESET#
Write reset
command
SecSi Sector
Protect Verify
complete
SecSi Sector Protect Verify
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 11 for command definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during V CC power-up
and power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control
pins to prevent unintentional writes when V CC is
greater than VLKO.
If WE# = CE# = VIL and OE# = V IH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
COMMON FLASH MEMORY INTERFACE
(CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any
time the device is ready to read array data. The
system can read CFI information at the addresses
given in Tables 12–15. To terminate reading CFI data,
the system must write the reset command.The CFI
Query mode is not accessible when the device is executing an Embedded Program or embedded Erase algorithm.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 12–15. The
system must write the reset command to return the
device to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the World
Wide Web at http://www.amd.com/flash/cfi. Alternatively, contact an AMD representative for copies of
these documents.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
91
A D V A N C E
Table 7.
I N F O R M A T I O N
CFI Query Identification String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 8.
Description
System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2N µs
20h
40h
0000h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2N times typical
24h
48h
0000h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
92
Description
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
Table 9.
Addresses
(Word Mode)
Addresses
(Byte Mode)
I N F O R M A T I O N
Device Geometry Definition
Data
Description
N
27h
4Eh
0017h
Device Size = 2 byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
007Dh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
93
A D V A N C E
Table 10.
I N F O R M A T I O N
Primary Vendor-Specific Extended Query
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Description
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII (reflects modifications to the silicon)
44h
88h
0033h
Minor version number, ASCII (reflects modifications to the CFI table)
45h
8Ah
0004h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Silicon Revision Number (Bits 7-2)
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
01 =29F040 mode, 02 = 29F016 mode, 03 = 29F400, 04 = 29LV800
mode
4Ah
94h
0077h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors (excluding Bank 1)
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
0085h
4Eh
9Ch
0095h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
94
4Fh
9Eh
0004h
50h
A0h
0001h
57h
AEh
0004h
58h
B0h
0017h
59h
B2h
0030h
5Ah
B4h
0030h
5Bh
B6h
0017h
00h = Uniform device, 01h = 8 x 8 Kbyte Sectors, Top And Bottom Boot
with Write Protect, 02h = Bottom Boot Device, 03h = Top Boot Device,
04h = Both Top and Bottom
Program Suspend
0 = Not supported, 1 = Supported, but not tested
Bank Organization
00 = Data at 4Ah is zero, X = Number of Banks
Bank 1 Region Information
X = Number of Sectors in Bank 1
Bank 2 Region Information
X = Number of Sectors in Bank 2
Bank 3 Region Information
X = Number of Sectors in Bank 3
Bank 4 Region Information
X = Number of Sectors in Bank 4
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Table 11 defines the valid register command
sequences. Writing incorrect address and data values
or writing them in the improper sequence may place
the device to an unknown state. A reset command is
required to return the device to read array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the pSRAM AC Characteristics section
for timing diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the corresponding ban k enters the erase-suspend-read mode, after which the system can read
data from any non-erase-suspended sector within the
same bank. The system can read array data using the
standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming
operation in the Erase Suspend mode, the system
may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the
next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
section for more information. The AC Characteristics
table provides the read parameters, and Figure 13
shows the timing diagram.
Reset Command
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
February 5, 2004
before programming begins. This resets the bank to
which the system was writing to the read mode. If the
program command sequence is written to a bank that
is in the Erase Suspend mode, writing the reset
co m m an d re tur ns th a t ba nk to the e ra s e- s us pend-read mode. Once programming begins, however,
the device ignores reset commands until the operation
is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If a bank
entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that
bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
The autoselect command sequence may be written to
an address within a bank that is either in the read or
erase-suspend-read mode. The autoselect command
may not be written while the device is actively programming or erasing in the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read any number of
autoselect codes without reinitiating the command sequence.
Table 11 shows the address and data requirements.
To determine sector protection information, the system
must write to the appropriate bank address (BA) and
sector address (SA). Table 2 shows the address range
and bank number associated with each sector.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing a random, sixteen-byte electronic serial
number (ESN). The system can access the SecSi
Sector region by issuing the three-cycle Enter SecSi
Sector command sequence. The device continues to
access the SecSi Sector region until the system is-
Am75PDL191CHH/Am75PDL193CHH
95
A D V A N C E
I N F O R M A T I O N
sues the four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector command sequence
returns the device to normal operation. The SecSi
Sector is not accessible when the device is executing
an Embedded Program or embedded Erase algorithm.
Table 11 shows the address and data requirements for
both command sequences. See also “SecSi™ (Secured Silicon) Sector Flash Memory Region” for further
information. Note that the ACC function and unlock bypass modes are not available when the SecSi Sector
is enabled.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Table 11 shows the address
and data requirements for the byte program command
sequence.
When the Embedded Program algorithm is complete,
that bank then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Refer to the Write Operation
Status section for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. SecSi sector, autoselect, and CFI are not
allowed. The program command sequence should be
reinitiated once that bank has returned to the read
mode, to ensure data integrity. Note that the SecSi
Sector, autoselect, and CFI functions are unavailable
when a program operation is in progress.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause that bank to set DQ5 = 1, or cause the DQ7 and
DQ6 status bits to indicate the operation was success-
96
ful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a “0”
to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to a bank faster than using the
standard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
That bank then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the
program address and data. Additional data is programmed in the same manner. This mode dispenses
with the initial two unlock cycles required in the standard program command sequence, resulting in faster
total programming time. Table 11 shows the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. See Table 12.
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at V HH any operation
other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not
be left floating or unconnected; inconsistent behavior
of the device may result.
Figure 4 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 16 for timing diagrams.
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading
array data, to ensure data integrity.
START
Figure 5 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 18 section for timing diagrams.
Write Program
Command Sequence
Embedded
Program
algorithm
in progress
Data Poll
from System
Sector Erase Command Sequence
Verify Data?
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Table 11 shows the address and data requirements for the sector erase command sequence.
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 11 for program command sequence.
Figure 4.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Table 11
shows the address and data requirements for the chip
erase command sequence.
When the Embedded Erase algorithm is complete,
that bank returns to the read mode and addresses are
no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2,
or RY/BY#. Refer to the Write Operation Status section for information on these status bits. Note that the
SecSi Sector, autoselect, and CFI functions are unavailable when a program operation is in progress.
February 5, 2004
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase
time-out of 80 µs occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 80
µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out
may or may not be accepted. It is recommended that
processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. Any command other than Sector Erase or
Erase Suspend during the time-out period resets
that bank to the read mode. No SecSi sector, autoselect, or CFI is available. The system must rewrite
the command sequence and any additional addresses
and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
data from the non-erasing bank. The system can de-
Am75PDL191CHH/Am75PDL193CHH
97
A D V A N C E
I N F O R M A T I O N
termine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer
to the Write Operation Status section for information
on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
Figure 5 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 18 section for timing diagrams.
Write Erase
Command Sequence
(Notes 1, 2)
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 11 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Figure 5.
When the Erase Suspend command is written during
the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation. Addresses are “don’t-cares” when
writing the Erase suspend command.
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors produces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Write Operation Status section for information on these status bits.
START
Data Poll to Erasing
Bank from System
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 80 µs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program
algorithm.
Erase Operation
Erase Suspend/Erase Resume
Commands
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Byte Program operation.
Refer to the Write Operation Status section for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. The device
allows reading autoselect codes even at addresses
within erasing sectors, since the codes are not stored
in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation.
Refer to the Autoselect Mode and Autoselect Command Sequence sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command (address bits
are don’t care). The bank address of the erase-suspended bank is required when writing this command.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the chip has resumed erasing.
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
98
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
Cycles
Table 11.
Autoselect (Note 7)
Command
Sequence
(Note 1)
Read (Note 5)
Reset (Note 6)
Manufacturer ID
Device ID (Note 9)
SecSi Sector Factory
Protect (Note 10)
Sector/Sector Block
Protect Verify
(Note 11)
1
1
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Exit SecSi Sector Region
Byte
Word
Program
Byte
Word
Unlock Bypass
Byte
Unlock Bypass Program (Note 15)
Unlock Bypass Reset (Note 15)
Word
Chip Erase
Byte
Word
Sector Erase
Byte
Erase Suspend (Note 11)
Erase Resume (Note 12)
Word
CFI Query (Note 13)
Byte
Enter SecSi Sector Region
4
6
4
4
3
4
4
3
2
2
6
6
1
1
1
I N F O R M A T I O N
Am29DL640H Command Definitions
First
Addr Data
RA
RD
XXX
F0
555
AA
AAA
555
AA
AAA
555
AA
AAA
555
AA
AAA
Second
Addr Data
555
AAA
555
AAA
555
AAA
555
AAA
XXX
XXX
555
AAA
555
AAA
BA
BA
55
AA
2AA
555
2AA
555
2AA
555
2AA
555
PA
XXX
2AA
555
2AA
555
AA
AA
AA
AA
A0
90
AA
AA
2AA
555
2AA
555
2AA
555
2AA
555
55
55
55
55
55
55
55
55
(BA)555
(BA)AAA
(BA)555
(BA)AAA
(BA)555
(BA)AAA
(BA)555
(BA)AAA
555
AAA
555
AAA
555
AAA
555
AAA
90
90
90
90
(BA)X00
Fifth
Addr
Data
Sixth
Addr
Data
01
(BA)X01
(BA)X0E
7E
(BA)X02
(BA)X1C
(BA)X03
80/00
(BA)X06
(SA)X02
00/01
(SA)X04
02
(BA)X0F
(BA)X1E
01
55
555
AAA
10
55
SA
30
88
90
XXX
00
A0
PA
PD
20
PD
00
55
55
555
AAA
555
AAA
80
80
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
B0
30
98
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# pulse, whichever happens
later.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth, fifth, and sixth cycle of
the autoselect command sequence, all bus cycles are write
cycles.
4. Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD and PD.
5. Unless otherwise noted, address bits A21–A11 are don’t cares for
unlock and command cycles, unless SA or PA is required.
6. No unlock or command cycles required when bank is reading
array data.
7. The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when a bank is in the autoselect mode, or if DQ5 goes high (while
the bank is providing status information).
8. The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address to obtain the
manufacturer ID, device ID, or SecSi Sector factory protect
information. Data bits DQ15–DQ8 are don’t care. While reading
the autoselect addresses, the bank address must be the same
until a reset command is given. See the Autoselect Command
Sequence section for more information.
February 5, 2004
Bus Cycles (Notes 2–5)
Third
Fourth
Addr
Data
Addr
Data
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A21–A12 uniquely select any sector. Refer to
Table 2 for information on sector addresses.
BA = Address of the bank that is being switched to autoselect mode, is
in bypass mode, or is being erased. A21–A19 uniquely select a bank.
9. The device ID must be read across the fourth, fifth, and sixth
cycles.
10. The data is 80h for factory locked, 40h for customer locked, and
00h for not factory/customer locked.
11. The data is 00h for an unprotected sector/sector block and 01h for
a protected sector/sector block.
12. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
13. The Unlock Bypass Reset command is required to return to the
read mode when the bank is in the unlock bypass mode.
14. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
15. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
16. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Am75PDL191CHH/Am75PDL193CHH
99
A D V A N C E
I N F O R M A T I O N
WRITE OPERATION STATUS
The device provides several bits to determine the status of a
program or erase operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 18 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a method for
determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether
an Embedded Program or Erase operation is in progress or
has been completed.
vice has completed the program or erase operation
a n d D Q 7 h a s va l i d d a ta , th e d a t a o u t p u ts o n
D Q1 5–D Q0 may be s ti ll i nva lid . Val id d ata o n
DQ15–DQ0 (or DQ7–DQ0 for x8-only device) will appear on successive read cycles.
Table 18 shows the outputs for Data# Polling on DQ7.
Figure 6 shows the Data# Polling algorithm. Figure 20
in the pSRAM AC Characteristics section shows the
Data# Polling timing diagram.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Program or Erase algorithm is in
progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final
WE# pulse in the command sequence.
START
Read DQ7–DQ0
Addr = VA
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to
DQ7. This DQ7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to
DQ7. The system must provide the program address to
read valid status information on DQ7. If a program address
falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to the
read mode.
DQ7 = Data?
No
No
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the
bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ15–DQ0 (or DQ7–DQ0 for x8-only device) on the
following read cycles. Just prior to the completion of an
Embedded Program or Erase operation, DQ7 may
change asynchronously with DQ15–DQ8 (DQ7–DQ0
for x8-only device) while Output Enable (OE#) is asserted low. That is, the device may change from providing status infor mation to valid data on DQ7.
Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the de-
100
Yes
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Figure 6. Data# Polling Algorithm
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the standby
mode, or one of the banks is in the erase-suspend-read mode.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Table 18 shows the outputs for Toggle Bit I on DQ6.
Figure 7 shows the toggle bit algorithm. Figure 21 in
the “AC Characteristics” section shows the toggle bit
timing diagrams. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. See also the
subsection on DQ2: Toggle Bit II.
START
Read Byte
(DQ7–DQ0)
Address =VA
Table 18 shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system
can use DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
Read Byte
(DQ7–DQ0)
Address =VA
Toggle Bit
= Toggle?
Yes
No
DQ5 = 1?
Yes
Read Byte Twice
(DQ7–DQ0)
Address = VA
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if DQ5
= “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
Figure 7.
February 5, 2004
No
Am75PDL191CHH/Am75PDL193CHH
Toggle Bit Algorithm
101
A D V A N C E
I N F O R M A T I O N
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 18 to compare outputs for DQ2 and DQ6.
Figure 7 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsection.
Figure 21 shows the toggle bit timing diagram. Figure
22 shows the differences between DQ2 and DQ6 in
graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 7 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ15–DQ0 (or DQ7–DQ0 for x8-only
device) at least twice in a row to determine whether a
toggle bit is toggling. Typically, the system would note
and store the value of the toggle bit after the first read.
After the second read, the system would compare the
new value of the toggle bit with the first. If the toggle bit
is not toggling, the device has completed the program
or erase operation. The system can read array data on
DQ15–DQ0 (or DQ7–DQ0 for x8-only device) on the
following read cycle.
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 7).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under these
conditions DQ5 produces a “1,” indicating that the program
or erase cycle was not successfully completed.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.”
Under both these conditions, the system must write
the reset command to return to the read mode (or to
the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode).
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase command. When the time-out period is complete, DQ3
switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be
assumed to be less than 50 µs, the system need not
monitor DQ3. See also the Sector Erase Command
Sequence section.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the device did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
device will accept additional sector erase commands.
To ensure the command has been accepted, the system software should check the status of DQ3 prior to
and following each subsequent sector erase command. If DQ3 is high on the second status check, the
last command might not have been accepted.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
Table 18 shows the status of DQ3 relative to the other
status bits.
102
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
Table 12.
Standard
Mode
Erase
Suspend
Mode
Status
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Erase-Suspend- Suspended Sector
Read
Non-Erase
Suspended Sector
Erase-Suspend-Program
I N F O R M A T I O N
Write Operation Status
DQ7
(Note 2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 1)
0
0
DQ3
N/A
1
DQ2
(Note 2)
No toggle
Toggle
RY/BY#
0
0
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm
is in progress. The device outputs array data if the system addresses a non-busy bank.
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
103
A D V A N C E
I N F O R M A T I O N
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
20 ns
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –65°C to +125°C
+0.8 V
Voltage with Respect to Ground
–0.5 V
VCC (Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
A9, OE#, and RESET#
(Note 2) . . . . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V
20 ns
–2.0 V
20 ns
WP#/ACC . . . . . . . . . . . . . . . . . . –0.5 V to +10.5 V
All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V
Figure 8. Maximum Negative
Overshoot Waveform
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
overshoot V SS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
See Figure 8. During voltage transitions, input or I/O pins
may overshoot to VCC +2.0 V for periods up to 20 ns. See
Figure 9.
2. Minimum DC input voltage on pins A9, OE#, RESET#,
and WP#/ACC is –0.5 V. During voltage transitions, A9,
OE#, WP#/ACC, and RESET# may overshoot VSS to
–2.0 V for periods of up to 20 ns. See Figure 8. Maximum
DC input voltage on pin A9 is +12.5 V which may
overshoot to +14.0 V for periods up to 20 ns. Maximum
DC input voltage on WP#/ACC is +9.5 V which may
overshoot to +12.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
20 ns
20 ns
Figure 9. Maximum Positive
Overshoot Waveform
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
Extended (E) Devices
Ambient Temperature (TA) . . . . . . . . –55°C to +125°C
Spansion Flash MultiChip memory products are not
tested or guaranteed for any level of ESD immunity on
components not designed and manufactured by FASL
LLC. Please refer to individual MCP product qualification reports for information on how to obtain ESD immunity infor mation from manufacturers of such
components.
VCC Supply Voltages
VCC for standard voltage range . . . . . . . 2.7 V to 3.3 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
104
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
ILR
Reset Leakage Current
VCC = VCC max; RESET= 12.5 V
Typ
Max
Unit
±1.0
µA
35
µA
±1.0
µA
35
µA
CE# = VIL, OE# = VIH,
Byte Mode
5 MHz
10
16
1 MHz
2
4
CE# = VIL, OE# = VIH,
Word Mode
5 MHz
10
16
1 MHz
2
4
ICC2
VCC Active Write Current (Notes 2, 3) CE# = VIL, OE# = VIH, WE# = VIL
15
30
mA
ICC3
VCC Standby Current (Note 2)
CE#, RESET# = VCC ± 0.3 V
0.2
5
µA
ICC4
VCC Reset Current (Note 2)
RESET# = VSS ± 0.3 V
0.2
5
µA
ICC5
Automatic Sleep Mode (Notes 2, 4)
VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
0.2
5
µA
ICC6
VCC Active Read-While-Program
Current (Notes 1, 2)
CE# = VIL, OE# = VIH
Word
21
45
mA
ICC7
VCC Active Read-While-Erase
Current (Notes 1, 2)
CE# = VIL, OE# = VIH
Word
21
45
mA
ICC8
VCC Active
Program-While-Erase-Suspended
Current (Notes 2, 5)
CE# = VIL, OE# = VIH
17
35
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
V
VHH
Voltage for WP#/ACC Sector
Protect/Unprotect and Program
Acceleration
VCC = 3.0 V ± 10%
8.5
9.5
V
VID
Voltage for Autoselect and Temporary
VCC = 3.0 V ± 10%
Sector Unprotect
11.5
12.5
V
VOL
Output Low Voltage
0.45
V
ICC1
VOH1
VCC Active Read Current
(Notes 1, 2)
mA
IOL = 2.0 mA, VCC = VCC min
Output High Voltage
VOH2
VLKO
IOH = –2.0 mA, VCC = VCC min
0.85 VCC
IOH = –100 µA, VCC = VCC min
VCC–0.4
Low VCC Lock-Out Voltage (Note 5)
2.0
V
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
105
A D V A N C E
I N F O R M A T I O N
DC CHARACTERISTICS
Zero-Power Flash
Supply Current in mA
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 10.
ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
12
3.6 V
10
2.7 V
Supply Current in mA
8
6
4
2
0
1
2
3
4
5
Frequency in MHz
Note: T = 25 °C
Figure 11.
106
Typical ICC1 vs. Frequency
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
TEST CONDITIONS
Table 13.
3.1 V
2.7 kΩ
Device
Under
Test
CL
6.2 kΩ
Test Specifications
Test Condition
All Speed Options
Output Load
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
70
pF
Input Rise and Fall Times
5
ns
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Figure 12.
Unit
Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
3.0 V
Input
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
1.5 V
Measurement Level
1.5 V
Output
0.0 V
Figure 13.
February 5, 2004
Input Waveforms and Measurement Levels
Am75PDL191CHH/Am75PDL193CHH
107
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Read-Only Operations
Parameter
JEDEC
Std.
Description
Test Setup
All Speed Options
Unit
tAVAV
tRC
Read Cycle Time (Note 1)
Min
70
ns
tAVQV
tACC
Address to Output Delay
CE#,
OE# = VIL
Max
70
ns
tELQV
tCE
Chip Enable to Output Delay
OE# = VIL
Max
70
ns
tGLQV
tOE
Output Enable to Output Delay
Max
30
ns
tEHQZ
tDF
Chip Enable to Output High Z (Notes 1, 3)
Max
16
ns
tGHQZ
tDF
Output Enable to Output High Z (Notes 1, 3)
Max
16
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
Read
Min
0
ns
tOEH
Output Enable Hold Time
(Note 1)
Toggle and
Data# Polling
Min
10
ns
Notes:
1. Not 100% tested.
2. See Figure 10 and Table 19 for test specifications
3. Measurements performed by placing a 50 ohm termination on the data pin with a bias of VCC/2. The time from OE# high to
the data bus driven to VCC/2 is taken as tDF
.
tRC
Addresses Stable
Addresses
tACC
CE#
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 14.
108
Read Operation Timings
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 15.
February 5, 2004
Reset Timings
Am75PDL191CHH/Am75PDL193CHH
109
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Erase and Program Operations
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tAH
Address Hold Time
Min
40
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
40
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
30
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
Typ
7
µs
tWLAX
tWHWH1
tWHWH1
Programming Operation (Note 2)
tWHWH1
tWHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Max
90
ns
tBUSY
Word
Notes:
1. Not 100% tested.
110
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
tBUSY
DOUT
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 16.
Program Operation Timings
VHH
WP#/ACC
VIL or VIH
VIL or VIH
tVHH
tVHH
Figure 17.
February 5, 2004
Accelerated Program Timing Diagram
Am75PDL191CHH/Am75PDL193CHH
111
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”.
2. These waveforms are for the word mode.
Figure 18.
112
Chip/Sector Erase Operation Timings
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Addresses
tWC
tWC
tRC
Valid PA
Valid RA
tWC
Valid PA
Valid PA
tAH
tCPH
tACC
tCE
CE#
tCP
tOE
OE#
tOEH
tGHWL
tWP
WE#
tDF
tWPH
tDS
tOH
tDH
Valid
Out
Valid
In
Data
Valid
In
Valid
In
tSR/W
WE# Controlled Write Cycle
Read Cycle
Figure 19.
CE# or CE2# Controlled Write Cycles
Back-to-back Read/Write Cycle Timings
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
True
Valid Data
High Z
True
Valid Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 20.
February 5, 2004
Data# Polling Timings (During Embedded Algorithms)
Am75PDL191CHH/Am75PDL193CHH
113
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
tOE
Valid Data
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle
Figure 21.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 22.
114
DQ2 vs. DQ6
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tVHH
VHH Rise and Fall Time (See Note)
Min
250
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
µs
tRRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect
Min
4
µs
Note: Not 100% tested.
VID
RESET#
VID
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRRB
tRSP
RY/BY#
Figure 23.
February 5, 2004
Temporary Sector Unprotect Timing Diagram
Am75PDL191CHH/Am75PDL193CHH
115
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Group Protect/Unprotect
Data
60h
60h
Valid*
Verify
40h
Status
1 µs
CE#
Sector Group Protect: 150 µs
Sector Group Unprotect: 15 ms
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 24. Sector/Sector Block Protect and
Unprotect Timing Diagram
116
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Parameter
JEDEC
Std.
Description
All Speed Options
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
40
ns
tDVEH
tDS
Data Setup Time
Min
40
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
40
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation
(Note 2)
Typ
7
µs
tWHWH1
tWHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
Word
Notes:
1. Not 100% tested.
2. See the “Erase and Programming” section for more information.
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
117
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tCP
CE#
tWS
tWHWH1 or 2
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 25.
118
Alternate CE# Controlled Write (Erase/Program) Operation Timings
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.4
5
sec
Chip Erase Time
56
Excludes 00h programming
prior to erasure (Note 4)
Byte Program Time
5
150
µs
Accelerated Byte/Word Program Time
4
120
µs
Word Program Time
7
210
µs
28
84
sec
Chip Program Time
(Note 3)
Word Mode
sec
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
11 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
119
A D V A N C E
I N F O R M A T I O N
PSRAM AC CHARACTERISTICS
CE#s Timing
Parameter
Test Setup
JEDEC
Std
Description
—
tCCR
CE#s Recover Time
—
Min
All Speeds
Unit
0
ns
CE#1ps
tCCR
tCCR
CE2ps
Figure 26. Timing Diagram for Alternating
Between Pseudo SRAM to Flash
VCC
VCC (Min)
Min. 0 ns
CS2s
Min. 200 µs
CS#1s
Power Up Mode
Normal Operation
Note: After VCC reaches VCC (MIn), wait 200 µs with CS#1s and CS2s high. The device will enter into normal operation.
Figure 27.
120
Timing Waveform of Power-up
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
PSRAM AC CHARACTERISTICS
Functional Description
Mode
Read (Word)
Read (Lower Byte)
Read (Upper Byte)
Write (Word)
Write (Lower Byte)
Write (Upper Byte)
Outputs Disabled
Standby
Deep Power-down Standby
CE1# CE2
L
H
L
H
L
H
L
H
L
H
L
H
L
H
H
H
H
L
OE# WE#
L
H
L
H
L
H
X
L
X
L
X
L
H
H
X
X
X
X
LB#
L
L
H
L
L
H
X
X
X
UB#
L
H
L
L
H
L
X
X
X
Add
X
X
X
X
X
X
X
X
X
I/01 to I/08
DOUT
DOUT
High-Z
DIN
DIN
Invalid
High-Z
High-Z
High-Z
I/01 to I/08
DOUT
High-Z
DOUT
DIN
Invalid
DIN
High-Z
High-Z
High-Z
Power
IDDO
IDDO
IDDO
IDDO
IDDO
IDDO
IDDO
IDDO
IDDO
Note: L = Low-level Input (VIL), H = High-level Input (VIH), X = VIH or VIL, High-Z = High-impedance.
Absolute Maximum Ratings
Symbol
VDD
VIN
VOUT
Topr.
Tstrg.
PD
IOUT
Ratings
Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Storage Temperature
Power Dissipation
Short Circuit Output Current
Value
-1.0 to 3.6
-1.0 to 3.6
-1.0 to 3.6
-25 to 85
-55 to 150
0.6
50
Unit
V
V
V
o
C
W
o
C
o
C
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
DC Recommended Operating Conditions (Ta = -25oC to 85oC)
Symbol
VDD
VIH
IOUT
Ratings
Power Supply Voltage
Input High Voltage
Input Low Voltage
Min
2.6
2.0
-0.3*
Typ
2.75
-
Max
3.3
VDD + 0.3*
0.4
Unit
V
Note: All voltages are reference to GND. *: VIH (Max) VDD+1.0 V with 10 ns pulse width, VIL (Min) -1.0 V with 10 ns pulse width.
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
121
A D V A N C E
I N F O R M A T I O N
DC Characteristics (Ta = -25oC to 85oC, VDD = 2.6 to 3.3 V)
Symbol
IIL
ILO
VOH
VOL
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Test Condition
VIN = 0 V to VDD
Output disable, VOUT = 0 V to VDD
IOH = -0.5 mA
IOL = -1.0 mA
IDDO1
Operating Current
IDDO2
Page Access Operating Current
IDDS
Standby Current (MOS)
IDDSD
Deep Power-down Standby Current
CE1# = VIL
CE2 = VIH, IOUT = 0 mA
CE1# = VIL, CE2 = VIH,
tRC = min
Min
-1.0
-1.0
2.4
-
Typ
-
Max
+1.0
+1.0
0.4
Unit
µA
µA
V
V
-
50
mA
25
mA
-
-
CE1# = VDD - 0.2V, CE2 = VDD - 0.2V
-
-
100
µA
CE2 = 0.2V
-
-
5
µA
Max
10
10
Unit
pF
pF
Page add. cycling, IOUT = 0 mA
tPC = min
Notes:
1.
IDDO depends on the cycle time.
2.
IDDO depends on output loading. Specified values are defined with
the output open condition.
Capacitance (Ta = -25oC, f = 1 MHz)
Symbol
CIN
COUT
Parameter
Input Capitance
Output Capitance
Test Condition
VIN = GND
VOUT = GND
Note:
1.
This parameter is sampled periodically and is not 100% tested.
2. AC measurements are assumed tR, tF = 5 ns.
6. During the output state of I/O signals, input signals of reverse
polarity must not be applied.
3. Parameters tOD, tODO, tBD and tODW define the time at which the
output goes the open condition and are not output voltage
reference levels.
7. If CE1# or LB#/UB# goes LOW coincident with or after WE# goes
LOW, the outputs will remain at high impedance.
4. Data cannot be retained at deep power-down standby mode.
8. If CE1 or LB#/UB# goes HIGH coincident with or before WE#
goes HIGH, the outputs will remain at high impedance.
5. If OE# is high during the write cycle, the outputs will remain at
high impedance.
122
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
AC Characteristics and Operating Conditions
Symbol
tRC
tACC
Read Cycle Time
Address Access Time
Parameter
tCO
Chip Enable (CE1#) Access Time
tOE
tBA
tCOE
tOEE
tBE
tOD
tODO
tBD
tOH
tPM
tPC
tAA
tAOH
tWC
tWP
tCW
tBW
tAW
tAS
tWR
tCEH
tWEH
Output Enable Access Time
Data Byte Control Access Time
Chip Enable Low to Output Active
Output Enable Low to Output Active
Data Byte Control Low to Output Active
Chip Enable High to Output High-Z
Output Enable High to Output High-Z
Data Byte Control High to Output High-Z
Output Data Hold Time
Page Mode Time
Page Mode Cycle Time
Page Mode Address Access Time
Page Mode Output Data Hold Time
Write Cycle Time
Write Pulse Width
Chip Enable to End of Write
Data Byte Control to End of Write
Address Valid to End of Write
Address Set-up Time
Write Recovery Time
Chip Enable High Pulse Width
Write Enable High Pulse Width
tODW
WE# Low to Output High-Z
tOEW
WE# High to Output Active
tDS
tDH
tCS
tCH
tCPD
Data Set-up Time
Data Hold Time
CE2 Set-up Time
CE2 Hold Time
CE2 Pulse Width
tCHC
tCHP
Min
70
-
Max
1000
70
Unit
ns
ns
-
70
ns
10
0
0
10
70
30
10
70
50
70
60
60
0
0
10
6
25
25
20
20
20
10000
30
10000
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
20
ns
0
-
ns
30
0
0
300
10
-
ns
ns
ns
ns
ms
CE2 Hold from CE1#
0
-
ns
CE2 Hold from Power on
30
-
µs
Notes:
1.
Stresses greater than listed under “Absolute Maximum Ratings” may
cause permanent damage to the device.
2. All voltages are reference to GND.
3. IDDO depends on the cycle time.
4. IDDO depends on output loading. Specified values are defined
with the output open condition.
February 5, 2004
5. AC measurements are assumed tR, tF = 5 ns.
6. Parameters tOD, tODO, tBD and tODW define the time at which the
output goes the open condition and are not output voltage
reference levels.
7. Data cannot be retained at deep power-down standby mode.
Am75PDL191CHH/Am75PDL193CHH
123
A D V A N C E
I N F O R M A T I O N
AC Test Conditions
Parameter
Output Load
Input Pulse Level
Timing Measurements
Reference Level
tR, tF
124
Condition
30 pF + 1 TTL Gate
VDD - 0.2 V, 0.2 V
VDD x 0.5
VDD x 0.5
5 ns
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
Timing Diagrams
Read Cycle
Page Read Cycle (8 words access)
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
125
A D V A N C E
I N F O R M A T I O N
Write Cycle 1
Write Cycle 2
126
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
February 5, 2004
I N F O R M A T I O N
Am75PDL191CHH/Am75PDL193CHH
127
A D V A N C E
I N F O R M A T I O N
PHYSICAL DIMENSIONS
FMB073—73-Ball Fine-Pitch Grid Array 9 x 12 mm
A
D
D1
eD
0.15 C
(2X)
10
9
SE 7
8
7
6
E
E1
5
4
eE
3
2
1
INDEX MARK
PIN A1
CORNER
M
L
K
J
H
G
F
E
D
C B
A
PIN A1
CORNER
B
10
7
TOP VIEW
0.15 C
SD
(2X)
BOTTOM VIEW
0.20 C
A A2
A1
C
0.08 C
SIDE VIEW
6
b
73X
0.15 M C A B
0.08 M C
NOTES:
PACKAGE
FMB 073
JEDEC
N/A
13.00 mm X 9.00 mm PACKAGE
SYMBOL
MIN.
NOM.
MAX.
A
---
---
1.40
A1
0.20
---
---
A2
1.02
---
1.17
PROFILE
BALL HEIGHT
13.00 BSC
BODY SIZE
E
9.00 BSC
BODY SIZE
D1
8.80 BSC
MATRIX FOOTPRINT
E1
7.20 BSC
MATRIX FOOTPRINT
MD
12
MATRIX SIZE D DIRECTION
ME
10
MATRIX SIZE E DIRECTION
n
73
0.29
---
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL MATRIX IN THE "D" DIRECTION.
SYMBOL "ME" IS THE BALL MATRIX IN THE "E" DIRECTION.
n IS THE NUMBER OF POPULATED SOLDER BALL
POSITIONS FOR MATRIX SIZE MD X ME.
6.
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7.
SD AND SE ARE MEASURED WITH RESPECT TO
DATUMS A AND B AND DEFINE THE POSITION OF THE
CENTER SOLDER BALL IN THE OUTER ROW.
BALL COUNT
0.39
eE
0.80 BSC
BALL PITCH
0.80 BSC
BALL PITCH
0.40 BSC
A2,A3,A4,A5,A6,A7,A8,A9
B2,B3,B4,B5,B6,B7,B8,B9
C2,C9,C10,D1,D10,E1,E10
F5,F6,G5,G6,H1,H10,J1,J10
K1,K2,K9,K10,L2,L3,L4,L7,L8,L9
M2,M3,M4,M5,M6,M7,M8,M9
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS
IN THE OUTER ROW SD OR SE = 0.000.
BALL DIAMETER
eD
SD/SE
DIMENSIONING AND TOLERANCING METHODS PER
ASME Y14.5M-1994.
BODY THICKNESS
D
Ob
128
NOTE
1.
SOLDER BALL PLACEMENT
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS
IN THE OUTER ROW, SD OR SE = E/2
8.
"+" INDICATES THE THEORETICAL CENTER OF
DEPOPULATED BALLS.
9.
NOT USED.
DEPOPULATED SOLDER BALLS
10. A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER
OR INK MARK, METALLIZED MARK INDENTATION OR
OTHER MEANS.
w053003f-163814c
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
I N F O R M A T I O N
REVISION SUMMARY
Revision A (December 5, 2003)
Initial release.
Revision A+1 (February 5, 2004)
ESD Immunity
Added an ESD Immunity qualification statement regarding component devices manufactured by third parties.
February 5, 2004
Am75PDL191CHH/Am75PDL193CHH
129
A D V A N C E
I N F O R M A T I O N
Trademarks
Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
130
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E
February 5, 2004
I N F O R M A T I O N
Am75PDL191CHH/Am75PDL193CHH
131
Product Selector Guide . . . . . . . . . . . . . . . . . . . . 11
MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . 12
Connection Diagram–PDL127 . . . . . . . . . . . . . . . 13
Special Package Handling Instructions .................................. 13
Connection Diagram–PDL129 . . . . . . . . . . . . . . . 14
Special Package Handling Instructions .................................. 14
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Ordering Information . . . . . . . . . . . . . . . . . . . . . . 16
Am29PDL127H/AM29PDL129H Device Bus Operations ....... 17
Table 1. Device Bus Operations ..................................................... 18
Requirements for Reading Array Data ................................... 19
Random Read (Non-Page Read) ........................................ 19
Page Mode Read ................................................................ 19
Table 2. Page Select .......................................................................19
Simultaneous Operation ......................................................... 19
Table 3. Bank Select (PDL129H) ....................................................19
Table 4. Bank Select (PDL127H) ....................................................19
Writing Commands/Command Sequences ............................ 20
Accelerated Program Operation .......................................... 20
Autoselect Functions ........................................................... 20
Standby Mode ........................................................................ 20
Automatic Sleep Mode ........................................................... 20
RESET#: Hardware Reset Pin ............................................... 21
Output Disable Mode .............................................................. 21
Table 5. SecSiTM Sector Addresses ................................................21
Table 6. Am29PDL127H Sector Architecture ..................................22
Table 7. Am29PDL129H Sector Architecture ..................................29
Table 8. Am29PDL127H Boot Sector/Sector Block Addresses for Protection/Unprotection ........................................................................37
Table 9. Am29PDL129H Boot Sector/Sector Block Addresses for Protection/Unprotection
CE#f1 Control ..................................................................................38
Table 10. Am29PDL129H Boot Sector/Sector Block Addresses for
Protection/Unprotection
CE#f2 Control ..................................................................................38
Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . 39
Persistent Sector Protection ................................................... 39
Persistent Protection Bit (PPB) ............................................ 39
Persistent Protection Bit Lock (PPB Lock) .......................... 39
Dynamic Protection Bit (DYB) ............................................. 39
Table 11. Sector Protection Schemes .............................................40
Persistent Sector Protection Mode Locking Bit ................... 40
Password Protection Mode ..................................................... 40
Password and Password Mode Locking Bit ........................ 41
64-bit Password ................................................................... 41
Write Protect (WP#) ................................................................ 41
Persistent Protection Bit Lock .............................................. 41
High Voltage Sector Protection .............................................. 42
Figure 1. In-System Sector Protection/
Sector Unprotection Algorithms ...................................................... 43
Temporary Sector Unprotect .................................................. 44
Figure 2. Temporary Sector Unprotect Operation........................... 44
SecSi™ (Secured Silicon) Sector
Flash Memory Region ............................................................ 44
Factory-Locked Area (64 words) ......................................... 44
Customer-Lockable Area (64 words) ................................... 44
Figure 3. SecSi Protection Algorithm .............................................. 45
SecSi Sector Protection Bits ................................................ 46
1
Hardware Data Protection ...................................................... 46
Low VCC Write Inhibit ......................................................... 46
Write Pulse “Glitch” Protection ............................................ 46
Logical Inhibit ....................................................................... 46
Power-Up Write Inhibit ......................................................... 46
Common Flash Memory Interface (CFI) . . . . . . . 46
Table 12. CFI Query Identification String ........................................ 47
System Interface String................................................................... 47
Table 14. Device Geometry Definition ............................................ 48
Table 15. Primary Vendor-Specific Extended Query ...................... 49
Command Definitions . . . . . . . . . . . . . . . . . . . . . 50
Reading Array Data ................................................................ 50
Reset Command ..................................................................... 50
Autoselect Command Sequence ............................................ 50
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence .............................................................. 51
Word Program Command Sequence ...................................... 51
Unlock Bypass Command Sequence .................................. 51
Figure 4. Program Operation ......................................................... 52
Chip Erase Command Sequence ........................................... 52
Sector Erase Command Sequence ........................................ 52
Figure 5. Erase Operation.............................................................. 53
Erase Suspend/Erase Resume Commands ........................... 53
Password Program Command ................................................ 53
Password Verify Command .................................................... 54
Password Protection Mode Locking Bit Program Command .. 54
Persistent Sector Protection Mode Locking Bit Program Command ....................................................................................... 54
SecSi Sector Protection Bit Program Command .................... 54
PPB Lock Bit Set Command ................................................... 54
DYB Write Command ............................................................. 54
Password Unlock Command .................................................. 55
PPB Program Command ........................................................ 55
All PPB Erase Command ........................................................ 55
DYB Write Command ............................................................. 55
PPB Lock Bit Set Command ................................................... 55
PPB Status Command ............................................................ 55
PPB Lock Bit Status Command .............................................. 55
Sector Protection Status Command ....................................... 55
Command Definitions Tables .................................................. 56
Table 16. Memory Array Command Definitions ............................. 56
Table 17. Sector Protection Command Definitions ........................ 57
Write Operation Status . . . . . . . . . . . . . . . . . . . . 58
DQ7: Data# Polling ................................................................. 58
Figure 6. Data# Polling Algorithm .................................................. 58
RY/BY#: Ready/Busy# ............................................................ 59
DQ6: Toggle Bit I .................................................................... 59
Figure 7. Toggle Bit Algorithm........................................................ 59
DQ2: Toggle Bit II ................................................................... 60
Reading Toggle Bits DQ6/DQ2 ............................................... 60
DQ5: Exceeded Timing Limits ................................................ 60
DQ3: Sector Erase Timer ....................................................... 60
Table 18. Write Operation Status ................................................... 61
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 62
Figure 8. Maximum Negative Overshoot Waveform ...................... 62
Figure 9. Maximum Positive Overshoot Waveform........................ 62
ESD Immunity . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 64
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 65
February 5, 2004
Figure 10. Test Setup..................................................................... 65
Figure 11. Input Waveforms and Measurement Levels .................. 65
pSRAM AC Characteristics . . . . . . . . . . . . . . . . . 66
CE#1ps Timing ....................................................................... 66
Figure 12. Timing Diagram for Alternating
Between Pseudo SRAM and Flash................................................. 66
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 67
Read-Only Operations – Am29PDL127H ............................... 67
Read-Only Operations – Am29PDL129H ............................... 67
Figure 13. Read Operation Timings ................................................ 68
Figure 14. Page Read Operation Timings....................................... 68
Hardware Reset (RESET#) .................................................... 69
Figure 15. Reset Timings ................................................................ 69
Erase and Program Operations .............................................. 70
Figure 16. Program Operation Timings........................................... 71
Figure 17. Accelerated Program Timing Diagram........................... 71
Figure 18. Chip/Sector Erase Operation Timings ........................... 72
Figure 19. Back-to-back Read/Write Cycle Timings ....................... 73
Figure 20. Data# Polling Timings (During Embedded Algorithms).. 73
Figure 21. Toggle Bit Timings (During Embedded Algorithms)....... 74
Figure 22. DQ2 vs. DQ6.................................................................. 74
Temporary Sector Unprotect .................................................. 75
Figure 23. Temporary Sector Unprotect Timing Diagram ............... 75
Figure 24. Sector/Sector Block Protect and
Unprotect Timing Diagram .............................................................. 76
Alternate CE# Controlled Erase and Program Operations ..... 77
Figure 25. Flash Alternate CE# Controlled Write (Erase/Program)
Operation Timings........................................................................... 78
Erase And Programming Performance . . . . . . . . 79
Latchup Characteristics . . . . . . . . . . . . . . . . . . . 79
Package Pin Capacitance . . . . . . . . . . . . . . . . . . 79
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 79
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 80
Table 1. Am29DL640H Device Bus Operations ..............................80
Word/Byte Configuration ........................................................ 80
Requirements for Reading Array Data ................................... 80
Writing Commands/Command Sequences ............................ 81
Accelerated Program Operation .......................................... 81
Autoselect Functions ........................................................... 81
Simultaneous Read/Write Operations with Zero Latency ....... 81
Standby Mode ........................................................................ 81
Automatic Sleep Mode ........................................................... 81
RESET#: Hardware Reset Pin ............................................... 82
Output Disable Mode .............................................................. 82
Low VCC Write Inhibit ......................................................... 91
Write Pulse “Glitch” Protection ............................................ 91
Logical Inhibit ....................................................................... 91
Power-Up Write Inhibit ......................................................... 91
Common Flash Memory Interface (CFI) . . . . . . . 91
Table 7. CFI Query Identification String .......................................... 92
System Interface String................................................................... 92
Table 9. Device Geometry Definition .............................................. 93
Table 10. Primary Vendor-Specific Extended Query ...................... 94
Command Definitions . . . . . . . . . . . . . . . . . . . . . 95
Reading Array Data ................................................................ 95
Reset Command ..................................................................... 95
Autoselect Command Sequence ............................................ 95
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence .............................................................. 95
Word Program Command Sequence ...................................... 96
Unlock Bypass Command Sequence .................................. 96
Figure 4. Program Operation ......................................................... 97
Chip Erase Command Sequence ........................................... 97
Sector Erase Command Sequence ........................................ 97
Figure 5. Erase Operation.............................................................. 98
Erase Suspend/Erase Resume Commands ........................... 98
Table 11. Am29DL640H Command Definitions .............................. 99
Write Operation Status . . . . . . . . . . . . . . . . . . . 100
DQ7: Data# Polling ............................................................... 100
Figure 6. Data# Polling Algorithm ................................................ 100
RY/BY#: Ready/Busy# .......................................................... 101
DQ6: Toggle Bit I .................................................................. 101
Figure 7. Toggle Bit Algorithm...................................................... 101
DQ2: Toggle Bit II ................................................................. 102
Reading Toggle Bits DQ6/DQ2 ............................................. 102
DQ5: Exceeded Timing Limits .............................................. 102
DQ3: Sector Erase Timer ..................................................... 102
Table 12. Write Operation Status ................................................. 103
Absolute Maximum Ratings . . . . . . . . . . . . . . . 104
Figure 8. Maximum Negative Overshoot Waveform .................... 104
Figure 9. Maximum Positive Overshoot Waveform...................... 104
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . 105
Figure 10. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents) ........................................................... 106
Figure 11. Typical ICC1 vs. Frequency .......................................... 106
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . 107
Figure 12. Test Setup.................................................................. 107
Figure 13. Input Waveforms and Measurement Levels ............... 107
Table 2. Am29DL640H Sector Architecture ....................................82
Table 3. Bank Address ....................................................................85
SecSiTM Sector Addresses.............................................................. 85
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . 108
Read-Only Operations ......................................................... 108
Autoselect Mode ..................................................................... 85
Sector/Sector Block Protection and Unprotection .................. 87
Hardware Reset (RESET#) .................................................. 109
Table 5. Am29DL640H Boot Sector/Sector Block Addresses for Protection/Unprotection ........................................................................87
Erase and Program Operations ............................................ 110
Write Protect (WP#) ................................................................ 87
Table 6. WP#/ACC Modes ..............................................................88
Temporary Sector Unprotect .................................................. 88
Figure 1. Temporary Sector Unprotect Operation........................... 88
Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 89
SecSi™ (Secured Silicon) Sector
Flash Memory Region ............................................................ 90
Figure 3. SecSi Sector Protect Verify.............................................. 91
Hardware Data Protection ...................................................... 91
February 5, 2004
Figure 14. Read Operation Timings ............................................. 108
Figure 15. Reset Timings ............................................................. 109
Figure 16. Program Operation Timings........................................ 111
Figure 17. Accelerated Program Timing Diagram........................ 111
Figure 18. Chip/Sector Erase Operation Timings ........................ 112
Figure 19. Back-to-back Read/Write Cycle Timings .................... 113
Figure 20. Data# Polling Timings (During Embedded Algorithms) 113
Figure 21. Toggle Bit Timings (During Embedded Algorithms).... 114
Figure 22. DQ2 vs. DQ6............................................................... 114
Temporary Sector Unprotect ................................................ 115
Figure 23. Temporary Sector Unprotect Timing Diagram ............ 115
Figure 24. Sector/Sector Block Protect and
2
Unprotect Timing Diagram ............................................................ 116
Alternate CE# Controlled Erase and Program Operations ... 117
Figure 25. Alternate CE# Controlled Write (Erase/Program)
Operation Timings......................................................................... 118
Erase And Programming Performance . . . . . . . 119
Latchup Characteristics . . . . . . . . . . . . . . . . . . 119
PSRAM AC Characteristics . . . . . . . . . . . . . . . . 120
CE#s Timing ......................................................................... 120
Figure 26. Timing Diagram for Alternating
Between Pseudo SRAM to Flash.................................................. 120
Figure 27. Timing Waveform of Power-up .................................... 120
pSRAM AC CHaracteristics . . . . . . . . . . . . . . . . 121
Functional Description .......................................................... 121
Absolute Maximum Ratings .................................................. 121
3
DC Recommended Operating Conditions (Ta = -25oC to 85oC)
121
DC Characteristics (Ta = -25oC to 85oC, VDD = 2.6 to 3.3 V) ..
122
Capacitance (Ta = -25oC, f = 1 MHz) .................................. 122
AC Characteristics and Operating Conditions ...................... 123
AC Test Conditions ............................................................... 124
Timing Diagrams ................................................................... 125
Page Read Cycle (8 words access) ...................................... 125
Write Cycle 1 ........................................................................ 126
Write Cycle 2 ........................................................................ 126
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . 128
FMB073—73-Ball Fine-Pitch Grid Array 9 x 12 mm ............. 128
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . 129
February 5, 2004