DCR1840Y85 Phase Control Thyristor Preliminary Information DS5767-1.2 MAY 2005 (LN23936) FEATURES • Double Side Cooling • High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS • High Power Drives • High Voltage Power Supplies • Static Switches 8500V 1840A 25000A 1500V/µs 300A/µs * Higher dV/dt selections available VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V DCR1840Y85 DCR1840Y80 DCR1840Y75 DCR2220Y70 8500 8000 7500 7000 Conditions Tvj = -40° C to 125° C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: Outline type code: Y DCR1840Y85 (See Package Details for further information) Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. Fig. 1 Package outline 1/9 www.dynexsemi.com DCR1840Y85 SEMICONDUCTOR CURRENT RATINGS Tcase = 60° C unless stated otherwise Parameter Symbol Test Conditions Max. Units 1840 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 2890 A Continuous (direct) on-state current - 2770 A IT Half wave resistive load SURGE RATINGS Parameter Symbol ITSM 2 It Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125° C 25.0 kA VR = 0 3.125 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Virtual junction temperature Test Conditions Double side cooled DC - 0.00835 ° C/W Single side cooled Anode DC - 0.0134 ° C/W Cathode DC - 0.023 ° C/W Clamping force 54.0kN Double side - 0.002 ° C/W (with mounting compound) Single side - 0.004 ° C/W On-state (conducting) - 135 °C Reverse (blocking) - 125 °C Tstg Storage temperature range -55 125 °C Fm Clamping force 48 59 kN 2/9 www.dynexsemi.com DCR1840Y85 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125° C - 300 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125° C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 150 A/µs Gate source 30V, 10Ω, Non-repetitive - 300 A/µs tr < 0.5µs, Tj = 125° C VT(TO) rT tgd Threshold voltage – Low level 100A to1000A at Tcase = 125° C - 0.9 V Threshold voltage – High level 1000A to 7200A at Tcase = 125° C - 1.3 V On-state slope resistance – Low level 100A to 1000A at Tcase = 125° C - 0.888 mΩ On-state slope resistance – High level 1000A to 7200A at Tcase = 125° C - 0.55 mΩ TBD TBD µs - 1200 µs Delay time VD = 67% VDRM, gate source 30V, 10Ω tr = 0.5µs, Tj = 25° C tq Turn-off time Tj = 125° C, VR = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 2000A, Tj = 125° C, dI/dt – 1A/µs, 4800 8000 µC IL Latching current Tj = 25° C, VD = 5V TBD TBD mA IH Holding current Tj = 25° C, RG-K = ∞, ITM = 500A, IT = 5A TBD TBD mA 3/9 www.dynexsemi.com DCR1840Y85 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25° C 1.5 V VGD Gate non-trigger voltage At VDRM, Tcase = 125° C TBD V IGT Gate trigger current VDRM = 5V, Tcase = 25° C 250 mA IGD Gate non-trigger current VDRM = 5V, Tcase = 25° C TBD mA CURVES Instantaneous on-state current IT - (A) 7000 min 125° C max 125° C min 25° C max 25° C 6000 5000 4000 3000 2000 1000 0 0.0 2.0 4.0 6.0 Instantaneous on-state voltage VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.√IT Where A = 0.398265 B = 0.121095 C = 0.000524 D = -0.000007 these values are valid for Tj = 125° C for IT 500A to 7200A 4/9 www.dynexsemi.com DCR1840Y85 SEMICONDUCTOR 10 130 Maximum case temperature, T case ( oC ) Mean power dissipation - (kW) 8 7 6 5 4 180 120 90 60 30 3 2 1 100 90 80 70 60 50 40 30 20 0 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 130 12 180 120 90 60 30 120 110 100 11 10 Mean power dissipation - (kW) o 110 10 0 Maximum heatsink temperature, T Heatsink - ( C ) 180 120 90 60 30 120 9 90 80 70 60 50 40 30 9 8 7 6 5 4 20 2 10 1 0 0 500 1000 1500 2000 2500 d.c. 180 120 90 60 30 3 0 0 500 1000 1500 2000 2500 3000 3500 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave Fig.6 On-state power dissipation – rectangular wave 5/9 www.dynexsemi.com DCR1840Y85 SEMICONDUCTOR 130 d.c. 180 120 90 60 30 120 110 100 90 80 70 60 50 40 30 20 110 100 90 80 70 60 50 40 30 20 10 10 0 0 0 500 d.c. 180 120 90 60 30 120 o Maximum heatsik temperature T heatsink - ( C) Maximum permissible case temperature , T case - (°C) 130 1000 1500 2000 2500 3000 3500 0 1000 1500 2000 2500 3000 3500 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave 25 Thermal Impedance, Zth(j-c) - ( °C/kW) 500 1 0.612 Double side cooledRi (° C/kW) Ti (s) Anode side cooled Ri (° C/kW) 20 Ti (s) Double Side Cooling Ri (° C/kW) Cathode side cooled Anode Side Cooling 15 4 2.8608 0.010332 0.056415 0.333082 1.6323 3.61 7.1383 0.011328 0.065993 0.419695 9.0612 0.6728 Ti (s) Cathode Sided Cooling 3 3.1053 0.7009 2 1.7721 1.9388 2.0168 0.010954 0.065544 1.7306 18.6391 0.30379 5.7274 Zth = Σ [Ri x ( 1-exp. (t/ti))] [1] 10 ∆Rth(j-c) Conduction Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c. 5 0 0.001 0.01 0.1 1 Time ( s ) 10 100 Double side cooling ∆Zth (z) sine. rect. θ° 180 0.94 0.65 120 1.09 0.92 90 1.24 1.07 60 1.38 1.23 30 1.49 1.40 15 1.54 1.49 Anode Side Cooling ∆Zth (z) sine. rect. θ° 180 0.94 0.64 120 1.08 0.91 90 1.23 1.06 60 1.37 1.22 30 1.47 1.38 15 1.52 1.47 Cathode Sided Cooling ∆Zth (z) sine. rect. θ° 180 0.94 0.64 120 1.08 0.91 90 1.24 1.06 60 1.37 1.22 30 1.48 1.39 15 1.53 1.48 Fig.9 Maximum (limit) transient thermal impedance – junction to case (° C/kW) 6/9 www.dynexsemi.com DCR1840Y85 SEMICONDUCTOR 70 6 15 50 4 2 40 3 2 30 2 Conditions: Tcase= 125° C VR = 0 half-sine wave 20 10 10 1 0 1 10 Number of cycles Fig.10 Multi-cycle surge current 100 5 I t (MA s) 20 I2t ITSM 60 Conditions: Tcase = 125° C VR =0 Pulse width = 10ms Surge current, ITSM - (kA) Surge current, ITSM- (kA) 25 1 10 0 100 Pulse width, tP - (ms) Fig.11 Single-cycle surge current 7/9 www.dynexsemi.com DCR1840Y85 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK HOLE Ø3.60 X 2.00 DEEP (IN BOTH ELECTRODES) 20° OFFSET (NOM.) TO GATE TUBE Ø112.5 MAX. Ø73.0 NOM. Ø1.5 CATHODE Device DCR1474SY18 DCR1475SY28 DCR1476SY42 DCR1478SY48 DCR1574SY28 DCR1575SY42 DCR1576SY52 DCR3910Y22 DCR3650Y28 DCR2930Y42 DCR2630Y52 DCR2220Y65 DCR1840Y85 Maximum Minimum Thickness Thickness (mm) (mm) 35.045 34.395 35.12 34.47 35.35 34.7 35.47 34.82 35.12 34.47 35.35 34.7 35.47 34.82 35.045 34.395 35.12 34.47 35.35 34.7 35.47 34.82 35.73 35.08 36.09 35.44 GATE ANODE Ø73.0 NOM. FOR PACKAGE HEIGHT SEE TABLE Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: Y Fig.15 Package outline 8/9 www.dynexsemi.com DCR1840Y85 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 9/9 www.dynexsemi.com