2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Amplifier Applications • Unit: mm Low noise :NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 μA, f = 1 kHz • High DC current gain: hFE = 200~700 • High breakdown voltage: VCEO = −120 V • Low pulse noise. Low 1/f noise Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V IC −100 mA Collector current Base current IB −20 mA Collector power dissipation PC 300 mW Junction temperature Tj 125 °C JEDEC TO-92 Tstg −55~125 °C JEITA SC-43 Storage temperature range TOSHIBA 2-5F1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.21 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Noise figure Symbol ICBO Test Condition VCB = −120 V, IE = 0 Min Typ. Max Unit ⎯ ⎯ −0.1 μA IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA V (BR) CEO IC = −1 mA, IB = 0 −120 ⎯ ⎯ V VCE = −6 V, IC = −2 mA 200 ⎯ 700 VCE (sat) IC = −10 mA, IB = −1 mA ⎯ ⎯ −0.3 V VBE VCE = −6 V, IC = −2 mA ⎯ −0.65 ⎯ V fT VCE = −6 V, IC = −1 mA ⎯ 100 ⎯ MHz VCB = −10 V, IE = 0, f = 1 MHz ⎯ 4.0 ⎯ pF VCE = −6 V, IC = −0.1 mA, f = 10 Hz, RG = 10 kΩ ⎯ ⎯ 6 VCE = −6 V, IC = −0.1 mA, f = 1 kHz, RG = 10 kΩ ⎯ ⎯ 2 VCE = −6 V, IC = −0.1 mA, f = 1 kHz, RG = 100 Ω ⎯ 3 ⎯ hFE (Note) Cob NF dB Note: hFE classification GR: 200~400, BL: 350~700 1 2007-11-01 2SA970 2 2007-11-01 2SA970 3 2007-11-01 2SA970 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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