FDP030N06 N-Channel PowerTrench® MOSFET 60V, 193A, 3.2mΩ Features Description • RDS(on) = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Application • DC to DC Convertors / Synchronous Rectification • High Power and Current Handling Capability • RoHS Compliant D G G D S TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Parameter Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt Units V ±20 V -Continuous (TC = 25oC, Silicon Limited) 193* -Continuous (TC = 100oC, Silicon Limited) 136* -Continuous (TC = 25oC, Package Limited) 120 - Pulsed A (Note 1) 772 A (Note 2) 1434 mJ 6 V/ns (Note 3) (TC = 25oC) 231 W - Derate above 25oC 1.54 W/oC -55 to +175 oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL Ratings 60 o 300 C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.65 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2009 Fairchild Semiconductor Corporation FDP030N06 Rev. A 1 Units o C/W www.fairchildsemi.com FDP030N06 N-Channel PowerTrench® MOSFET June 2009 Device Marking FDP030N06 Device FDP030N06 Package TO-220 Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V - 0.05 - V/oC µA Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250µA, VGS = 0V, TC = 25oC ID = 1mA, Referenced to 25oC VDS = 48V, VGS = 0V - - 1 VDS = 48V, TC = 150oC - - 500 VGS = ±20V, VDS = 0V - - ±100 2.5 3.5 4.5 V - 2.6 3.2 mΩ - 154 - S nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 75A gFS Forward Transconductance VDS = 10V, ID = 75A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 48V, ID = 75A VGS = 10V (Note 4, 5) - 7380 9815 pF - 1095 1455 pF - 415 625 pF - 116 151 nC - 40 - nC - 35 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 30V, ID = 75A VGS = 10V, RGEN = 4.7Ω (Note 4, 5) - 39 87 ns - 178 366 ns - 54 118 ns - 33 76 ns A Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 193 ISM Maximum Pulsed Drain to Source Diode Forward Current - - 772 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.3 V trr Reverse Recovery Time 46 - ns Reverse Recovery Charge VGS = 0V, ISD = 75A dIF/dt = 100A/µs - Qrr - 50 - nC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.51mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤ 450A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP030N06 Rev. A 2 www.fairchildsemi.com FDP030N06 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V *Notes: 1. VDS = 10V 2. 250µs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 700 100 o o 150 C -55 C 10 o 25 C *Notes: 1. 250µs Pulse Test o 2. TC = 25 C 10 0.1 1 1 VDS, Drain-Source Voltage[V] 5 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 400 IS, Reverse Drain Current [A] 3.0 VGS = 10V 2.5 VGS = 20V 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 2.0 0 70 140 210 ID, Drain Current [A] 280 1 0.0 350 Figure 5. Capacitance Characteristics 6000 Ciss Coss *Note: 1. VGS = 0V 2. f = 1MHz 3000 Crss 0 0.1 FDP030N06 Rev. A 1.5 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] 9000 2. 250µs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 12000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3.5 RDS(ON) [Ω ], Drain-Source On-Resistance 4 6 VGS, Gate-Source Voltage[V] VDS = 15V VDS = 30V VDS = 48V 8 6 4 2 *Note: ID = 75A 0 1 10 VDS, Drain-Source Voltage [V] 0 30 3 20 40 60 80 100 Qg, Total Gate Charge [nC] 120 www.fairchildsemi.com FDP030N06 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 *Notes: 1. VGS = 0V 2. ID = 10mA 0.9 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] ID, Drain Current [A] ID, Drain Current [A] -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 200 1000 100µs 100 Operation in This Area is Limited by R DS(on) 1ms *Notes: o 1. TC = 25 C 150 100 Limited by package 50 10ms 100ms DC o 2. TJ = 175 C 3. Single Pulse 0.1 0.1 *Notes: 1. VGS = 10V 2. ID = 75A Figure 10. Maximum Drain Current vs. Case Temperature 10000 1 1.0 0.5 -100 200 Figure 9. Maximum Safe Operating Area 10 1.5 1 10 100 VDS, Drain-Source Voltage [V] 0 25 300 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve Thermal Response [Zθ JC] 1 0.5 0.2 PDM 0.1 t1 0.1 t2 0.05 *Notes: 0.02 0.01 o 1. ZθJC(t) = 0.65 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FDP030N06 Rev. A -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDP030N06 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP030N06 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP030N06 Rev. A 5 www.fairchildsemi.com FDP030N06 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V VGS ( D r iv e r ) GS G S am e T ype as D U T V DD • d v / d t c o n t r o lle d b y R G • IS D c o n t r o lle d b y p u ls e p e r io d G a te P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v /d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP030N06 Rev. A 6 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.52 ±0.10 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 FDP030N06 Rev. A 7 www.fairchildsemi.com FDP030N06 N-Channel PowerTrench® MOSFET Mechanical Dimensions TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * ® The Power Franchise TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com