Data Sheet QUAD OP AMP AND VOLTAGE REFERENCE AP4303 General Description Features The AP4303 is a monolithic IC that contains quad operational amplifiers and a precision shunt regulator, 1.25Vfor AP4303-C or 1.24V for AP4303-D respectively. It is specifically designed to regulate the output current and voltage levels of switching battery chargers and power supplies. Op Amp · Input Offset Voltage: 0.5mV · Supply Current: 250µA per Op Amp at 5.0V Supply Voltage · Unity Gain Bandwidth: 1MHz · Output Voltage Swing: 0 to (VCC-1.5)V · The four Op Amps feature accurate voltage and current control. Combining a stable voltage reference with the four Op Amps makes AP4303 ideal for use in multifunction charger, power supply voltage monitor, signal processing and control system. Power Supply Range: 3 to 18V Voltage Reference · Reference Voltage Tolerance: 0.5%, 1% · Sink Current Capability from 0.1 to 80mA · Output Dynamic Impedance: 0.2Ω · Externally Adjusted Output Voltage Reference: 1.25V for AP4303-C and 1.24V for AP4303-D The IC offers the power converter designer a control solution that features increased precision with a corresponding reduction in system complexity and cost. The AP4303 is available in standard packages of DIP16 and SOIC-16. Applications · · Battery Charger Switching Power Supply DIP-16 SOIC-16 Figure 1. Package Types of AP4303 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 1 Data Sheet QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Pin Configuration M Package/P Package (SOIC-16/DIP-16) OUTPUT 1 1 16 OUTPUT 4 INPUT 1- 2 15 INPUT 4- INPUT 1+ 3 14 INPUT 4+ VCC 4 13 GND INPUT 2+ 5 12 INPUT 3+ INPUT 2- 6 11 INPUT 3- OUTPUT 2 7 10 OUTPUT 3 VREF 8 9 CATHODE Top View Figure 2. Pin configuration of AP4303 Functional Block Diagram OUTPUT 1 1 INPUT 1- 2 - + + 16 OUTPUT 4 15 INPUT 4- INPUT 4+ - INPUT 1+ 3 14 VCC 4 13 INPUT 2+ 5 12 INPUT 2- 6 OUTPUT 2 VREF - + + GND INPUT 3+ 11 INPUT 3- 7 10 OUTPUT 3 8 9 CATHODE Figure 3. Functional Block Diagram of AP4303 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 2 Data Sheet QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Functional Block Diagram (Continued) VCC 6µA 4µA 100µA Q5 Q6 Q2 INPUT- Q3 Cc Q7 Q4 Q1 Rsc OUTPUT INPUT+ Q11 Q10 Q8 Q13 Q12 Q9 50uA Figure 4. Op Amp Functional Block Diagram (Each Amplifier) CATHODE 20µA 20µA VREF GND Figure 5. Voltage Reference Functional Block Diagram Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 3 Data Sheet QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Ordering Information AP4303 E1: Lead Free Blank: Tin Lead Circuit Type TR: Tape and Reel Blank: Tube Voltage Tolerance A: 0.5% B: 1% Package M: SOIC-16 P: DIP-16 Package Reference Voltage Voltage TemperaTolerance ture Range 1.25V DIP-16 1.24V 0.5% 1% 0.5% Output Voltage Reference C: 1.25V D: 1.24V Part Number Tin Lead Lead Free AP4303AP-C AP4303AP-CE1 -40 to 85oC AP4303BP-C AP4303AP-D AP4303BP-CE1 AP4303BP-C AP4303BP-CE1 AP4303AP-DE1 AP4303AP-D AP4303AP-DE1 AP4303BP-D AP4303BP-DE1 AP4303BP-D AP4303BP-DE1 AP4303AM-C AP4303AM-CE1 AP4303AM-C AP4303AM-CE1 AP4303AM-CTR AP4303AM-CTRE1 AP4303AM-C AP4303AM-CE1 1.25V AP4303BM-C 1% -40 to 85oC AP4303BM-CE1 AP4303AM-DE1 AP4303AM-D AP4303AM-DE1 AP4303AM-DTR AP4303AM-DTRE1 AP4303AM-D AP4303AM-DE1 AP4303BM-D 1% AP4303BM-C AP4303BM-CE1 AP4303BM-CTR AP4303BM-CTRE1 AP4303BM-C AP4303BM-CE1 AP4303AM-D 1.24V Lead Free AP4303AP-CE1 0.5% 0.5% Tin Lead AP4303AP-C 1% SOIC-16 Marking ID AP4303BM-DE1 AP4303BM-D AP4303BM-DE1 AP4303BM-DTR AP4303BM-DTRE1 AP4303BM-D AP4303BM-DE1 Packing Type Tube Tube Tape & Reel Tube Tape & Reel Tube Tape & Reel Tube Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 4 Data Sheet QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage (VCC to GND) VCC 20 V Input Voltage Range VIN -0.3 to VCC+0.3 V Op Amp Input Differential Voltage VID 20 V Voltage Reference Cathode Current IK 100 mA Power Dissipation PD Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering 10s) DIP-16 1000 SOIC-16 850 mW TJ 150 TSTG -65 to 150 o TL 260 o o C C C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Ambient Temperature Jul. 2006 Rev. 1. 2 Min Max Unit 3 18 V -40 105 o C BCD Semiconductor Manufacturing Limited 5 Data Sheet QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Electrical Characteristics Operating Conditions: VCC=+5V, TA=25oC unless otherwise specified. Parameter Conditions Min Total Supply Current, Excluding Current V =5V, no load, -40oC ≤T ≤85oC CC A in Voltage Reference VCC=18V, no load, -40oC ≤TA ≤85oC Typ Max Unit 1.0 1.6 mA 1.2 2.4 1.250 1.256 Voltage Reference Section Reference Voltage for AZ4303C IKA=10mA TA Reference Voltage for AZ4303D =25oC IKA=10mA TA =25oC 0.5% tolerance 1.244 1% tolerance 1.237 0.5% tolerance 1.234 1% tolerance 1.227 1.240 1.246 V 1.252 17 mV 0.1 0.2 mA VREF to 10V 1.0 2.7 mV/V 10V to 18V 0.5 2.0 0.7 4 µA 0.4 1.2 µA Minimum Cathode Current for Regulation Reference Current 1.263 5 Reference Voltage Deviation over Full I =10mA, T =-40 to 85oC KA A Temperature Range Ratio of Change in VREF to that of Cath- IKA=10mA ode Voltage V IKA=10mA, R1=10kΩ, R2=∞ The Deviation of Reference Current over VKA=VREF, IKA=10mA, Temperature TA=-40oC to 85oC Off-State Cathode Current VREF=0V, VKA=18V 0.05 1.0 µA Dynamic Impedance IKA =1.0 to 80mA, f<1kHz 0.2 0.5 Ω Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 6 Data Sheet QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Electrical Characteristics (Continued) Operating Conditions: VCC=+5V, TA=25oC unless otherwise specified. Parameter Conditions Min Typ Max Unit 0.5 3 mV Op Amp Section (Each Op Amp) (VCC=5V, VO=1.4V, TA=25oC, unless otherwise noted) Input Offset Voltage TA=25oC 5 TA=-40 to 85oC µV/ oC Input Offset Voltage Temperature Drift TA=-40 to 85oC 7 Input Offset Current TA=25oC 2 30 nA Input Bias Current TA=25oC 20 150 nA Input Voltage Range VCC=0 to 18V 0 VCC-1.5 V Common Mode Rejection Ratio TA=25oC, VCM=0 to 3.5V 70 85 dB Large Signal Voltage Gain VCC=15V, RL=2kΩ, VO=1.4 to 11.4V 85 100 dB Power Supply Rejection Ratio VCC=5 to 18V 70 90 dB Source VCC=15V, VID=1V, VO=2V 20 40 mA Sink VCC=15V, VID=-1V, VO=2V 10 20 mA Output Voltage Swing (High) VCC=18V, RL=10kΩ, VID=1V 16 16.5 V Output Voltage Swing (Low) VCC=18V, RL=10kΩ, VID=-1V Slew Rate VCC=18V, RL=2kΩ, AV=1, VIN=0.5 to 2V, CL=100pF 0.3 0.5 V/µ s Gain Bandwidth Product VCC=18V, RL=2kΩ, CL=100pF, VIN=10mV, f=100kHz 0.7 1 MHz Output Current Jul. 2006 Rev. 1. 2 17 100 mV BCD Semiconductor Manufacturing Limited 7 Data Sheet QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Typical Performance Characteristics 150 150 100 AP4303-C VKA=VREF Cathode Current (mA) Cathode Current (mA) 100 o 50 TA=25 C 0 -50 -100 AP4303-D VKA=VREF o TA=25 C 50 0 -50 -100 -150 -1 0 -150 1 -1 0 Cathode Voltage (V) Figure 7.Cathode Current vs. Cathode Voltage Figure 6. Cathode Current vs. Cathode Voltage 1K 60 10K 1 Cathode Voltage (V) 100K 1000K 60 5 50 Input Input and Output Voltage (V) 50 o TA = 25 C IKA = 10mA Av (dB) 40 40 4 3 30 30 20 20 10 10 1 0 0 0 1K 10K 100K o TA=25 C 2 Output 0 1000K 2 4 6 Time (µS) Small Signal Frequency (Hz) Figure 8. Voltage Reference Small Signal Voltage Gain vs. Frequency Jul. 2006 Rev. 1. 2 Figure 9. Pulse Response of VREF with respect to VKA BCD Semiconductor Manufacturing Limited 8 Data Sheet QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Typical Performance Characteristics (Continued) 30 110 25 20 Voltage Gain(dB) Input Bias Current (nA) 100 VCC=15V 15 10 90 80 RL=2KΩ RL=20KΩ 70 5 0 -40 -20 0 20 40 60 80 100 60 120 0 o Ambient Temperature ( C) 2 4 6 8 10 12 14 16 18 20 Supply Voltage (V) Figure 11. Op Amp Voltage Gain Figure10. Op Amp Input Current 100 VCC: 10V to 15V o Voltage Gain (dB) 80 o TA: -40 C to 85 C 60 R 10M 40 0.1uF VCC VO V CC/2 VIN 20 0 1 10 100 1k 10k 100k 1M Frequency (Hz) Figure 12. Open Loop Frequency Response Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 9 Data Sheet QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Mechanical Dimensions DIP-16 Unit: mm(inch) 7.620(0.300)TYP 6° 3.710(0.146) 4.310(0.170) 5° 6° 1.524(0.060)TYP 3.200(0.126) 3.600(0.142) 4° 4° 2.540(0.100) 0.510(0.020)MIN TYP Φ3.000(0.118) Depth 0.050(0.002) 0.150(0.006) 0.204(0.008) 0.360(0.014) 0.254(0.010) 0.360(0.014) 0.560(0.022) 0.700(0.028) 8.200(0.323) 9.400(0.370) 3.000(0.118) 3.600(0.142) 6.200(0.244) 6.600(0.260) 18.800(0.740) 19.200(0.756) R0.750(0.030) Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 10 Data Sheet QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Mechanical Dimensions (Continued) SOIC-16 1.000(0.039) 1.300(0.051) Unit: mm(inch) 1.650(0.065) 0.700(0.028) 7° 0.406(0.016) φ 2.000(0.079) Depth 0.060(0.002) 0.100(0.004) 7° B A 20:1 0.250(0.010) 0.500(0.020) 10.000(0.394) 1° 5° R0.200(0.008) R0.200(0.008) 0.150(0.006) 0.250(0.010) 0.203(0.008) 6.040(0.238) 3.940(0.155) 8° 9.5 ° 0.200(0.008) S φ1.000(0.039) 8° 8° C-C 50:1 B 20:1 C 3° 7° 0.250(0.010) 0.200(0.008)MIN Depth 0.200(0.008) A 0.400(0.016)×45° 1.000(0.039) 1.270(0.050) 0.600(0.024) C Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 11 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 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