AP60WN4K9J
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BVDSS
600V
▼ Simple Drive Requirement
RDS(ON)
4.9Ω
▼ Fast Switching Characteristic
3
ID
▼ 100% UIS Test
D
G
▼ RoHS Compliant & Halogen-Free
2A
S
Description
AP60WN4K9 series are from the innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
G
D S
TO-251(J)
The straight lead version TO-251 package is widely preferred for all
commercial-industrial through hole applications.
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
3
Drain Current, VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
4
Rating
Units
600
V
+30
V
2
A
6
A
31.2
W
1.13
W
12.8
mJ
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Units
4
℃/W
110
℃/W
1
201612022
AP60WN4K9J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
600
-
-
V
VGS=10V, ID=1A
-
-
4.9
Ω
VGS=0V, ID=250uA
2
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=20V, ID=1A
-
3
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+1
uA
Qg
Total Gate Charge
ID=1A
-
9.5
15.2
nC
Qgs
Gate-Source Charge
VDS=480V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4
-
nC
td(on)
Turn-on Delay Time
VDD=300V
-
8
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=50Ω
-
48
-
ns
tf
Fall Time
VGS=10V
-
22
-
ns
Ciss
Input Capacitance
VGS=0V
-
265
424
pF
Coss
Output Capacitance
VDS=100V
-
19
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
8
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.4
10.8
Ω
Min.
Typ.
Max. Units
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=1A, VGS=0V
-
-
1.5
V
trr
Reverse Recovery Time
IS=1A, VGS=0V
-
200
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
400
-
nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Ensure that the junction temperature does not exceed TJmax..
4.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP60WN4K9J
4
2.4
10V
7.0V
6.0V
5.0V
ID , Drain Current (A)
T C =25 C
3
o
T C =150 C
2
ID , Drain Current (A)
o
2
V G =4.0V
0.37Ω
1.6
10V
7.0V
6.0V
5.0V
V G =4.0V
1.2
0.8
1
0.4
0
0
0
10
20
30
40
0
10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
30
40
Fig 2. Typical Output Characteristics
4.1
4
I D =1A
V G =10V
I D =1A
o
3.9
.
Normalized RDS(ON)
T C =25 C
4
RDS(ON) (Ω)
20
V DS , Drain-to-Source Voltage (V)
3
2
1
3.8
0
3.7
2
4
6
8
-100
10
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C )
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6
2
I D =250uA
5
Normalized VGS(th)
1.6
IS (A)
4
3
T j = 150 o C
T j = 25 o C
1.2
0.8
2
0.4
1
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP60WN4K9J
f=1.0MHz
12
500
I D =1A
V DS =480V
400
0.37Ω
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
300
C iss
200
4
100
2
0
C oss
C rss
0
0
2
4
6
8
10
12
0
200
Q G , Total Gate Charge (nC)
400
600
800
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
1
ID (A)
10us
100us
0.1
1ms
10ms
DC
T C =25 o C
Single Pulse
.
Normalized Thermal Response (Rthjc)
10
Duty factor=0.5
0.2
0.1
0.1
PDM
0.05
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
0.01
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
2
50
1.6
40
Normalized BVDSS
PD , Power Dissipation (W)
I D =1mA
30
20
10
1.2
0.8
0.4
0
0
0
50
100
T C , Case Temperature ( o C )
Fig 11. Total Power Dissipation
150
-100
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 12. Normalized BVDSS v.s. Junction
Temperature
4
AP60WN4K9J
MARKING INFORMATION
Part Number
60WN4K9
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5