Order this document by BC846AWT1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit Collector – Emitter Voltage VCEO 65 45 30 V Collector – Base Voltage VCBO 80 50 30 V Emitter – Base Voltage VEBO 6.0 6.0 5.0 V IC 100 100 100 mAdc Collector Current — Continuous 3 1 2 CASE 419–02, STYLE 3 SOT–323/SC–70 THERMAL CHARACTERISTICS Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) TA = 25°C Characteristic PD 150 mW Thermal Resistance, Junction to Ambient RqJA 833 °C/W PD 2.4 mW/°C TJ, Tstg – 55 to +150 °C Total Device Dissipation Junction and Storage Temperature DEVICE MARKING BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F; BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mA) BC846 Series BC847 Series BC848 Series V(BR)CEO 65 45 30 — — — — — — V Collector – Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) BC846 Series BC847 Series BC848 Series V(BR)CES 80 50 30 — — — — — — V Collector – Base Breakdown Voltage (IC = 10 mA) BC846 Series BC847 Series BC848 Series V(BR)CBO 80 50 30 — — — — — — V Emitter – Base Breakdown Voltage (IE = 1.0 mA) BC846 Series BC847 Series BC848 Series V(BR)EBO 6.0 6.0 5.0 — — — — — — V ICBO — — — — 15 5.0 nA µA Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in Thermal Clad is a trademark of the Bergquist Company. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit hFE — — — 90 150 270 — — — — 110 200 420 180 290 520 220 450 800 ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) — — — — 0.25 0.6 V Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) — — 0.7 0.9 — — V Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 — 660 — 700 770 mV fT 100 — — MHz Cobo — — 4.5 SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 0.8 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 Figure 2. “Saturation” and “On” Voltages 2.0 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR–EMITTER VOLTAGE (V) 10 4.0 TA = 25°C 0.9 1.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = IC = 50 mA 10 mA 20 mA IC = 100 mA 0.8 0.4 0.02 0.1 1.0 IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 2 — — 1.0 VCE = 10 V TA = 25°C 1.5 0 dB — — 2.0 0.2 pF NF 10 20 –55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 4. Base–Emitter Temperature Coefficient Motorola Small–Signal Transistors, FETs and Diodes Device Data 10 C, CAPACITANCE (pF) 7.0 TA = 25°C 5.0 Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 40 20 f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) BC847/BC848 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 Figure 5. Capacitances 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 30 Figure 6. Current–Gain – Bandwidth Product TA = 25°C VCE = 5 V TA = 25°C 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 2.0 50 100 200 50 100 200 –1.0 TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 1.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 Figure 9. Collector Saturation Region Motorola Small–Signal Transistors, FETs and Diodes Device Data –1.4 –1.8 θVB for VBE –55°C to 125°C –2.2 –2.6 –3.0 0.2 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient 3 BC846 f T, CURRENT–GAIN – BANDWIDTH PRODUCT 40 C, CAPACITANCE (pF) TA = 25°C 20 Cib 10 6.0 Cob 4.0 2.0 0.1 0.2 1.0 2.0 10 20 0.5 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance 4 50 100 500 VCE = 5 V TA = 25°C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 12. Current–Gain – Bandwidth Product Motorola Small–Signal Transistors, FETs and Diodes Device Data INFORMATION FOR USING THE SOT–323/SC–70 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm SOT–323/SC–70 SOT–323/SC–70 POWER DISSIPATION The power dissipation of the SOT–323/SC–70 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–323/SC–70 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150°C – 25°C 833°C/W = 150 milliwatts The 833°C/W for the SOT–323/SC–70 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–323/SC–70 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 PACKAGE DIMENSIONS A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D V G C 0.05 (0.002) R N J DIM A B C D G H J K L N R S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.035 0.049 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.031 0.039 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.90 1.25 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 0.80 1.00 2.00 2.20 0.30 0.40 K H STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR CASE 419–02 ISSUE G SOT–323/SC–70 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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