2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1204 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 160 mA PC 500 Collector power dissipation PC 1000 (Note 1) Junction temperature Storage temperature range mW PW-MINI JEDEC ― JEITA SC-62 2-5K1A Tj 150 °C TOSHIBA Tstg −55 to 150 °C Weight: 0.05 g (typ.) 2 Note 1: Mounted on a ceramic substrate (250 mm × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 2SC2884 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 35 V, IE = 0 ― ― 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 0.1 μA V (BR) CEO IC = 10 mA, IB = 0 30 ― ― V IE = 1 V, IC = 100 mA 100 ― 320 hFE (2) VCE = 1 V, IC = 700 mA 35 ― ― VCE (sat) IC = 500 mA, IB = 20 mA ― ― 0.5 V Collector-emitter breakdown voltage hFE (1) (Note 3) DC current gain Collector-emitter saturation voltage ― Base-emitter voltage VBE VCE = 1 V, IC = 10 mA 0.5 ― 0.8 V Transition frequency fT VCE = 5 V, IC = 10 mA ― 120 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 13 ― pF Collector output capacitance Cob Note 3: hFE (1) classification O: 100 to 200, Y: 160 to 320 Marking Part No. (or abbreviation code) P Characteristics indicator Note 4 Lot No. Note 4: A line to the right of a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-21 2SC2884 IC – VCE hFE – IC 1000 1000 800 7 6 Common emitter Ta = 25°C 5 4 600 3 2 400 IB = 1 mA 200 VCE = 1 V 500 DC current gain hFE Collector current IC (mA) Common emitter 8 300 Ta = 100°C 25 −25 100 50 30 0 0 0 2 1 4 3 6 Collector-emitter voltage 10 1 7 3 VCE (V) 10 30 100 Collector current IC VCE (sat) – IC (mA) 800 Common emitter Common emitter IC/IB = 25 VCE = 1 V (mA) 0.5 0.3 Collector current IC Collector-emitter saturation voltage VCE (sat) (V) 1000 IC – VBE 1 0.1 Ta = 100°C 0.05 25 0.03 0.01 1 300 −25 3 10 30 100 Collector current IC 300 600 400 Ta = 100°C 25 200 0 0 1000 −25 0.4 (mA) 0.8 Base-emitter voltage 1.2 1.6 VBE (V) Safe Operating Area 3000 PC (W) 100 ms* 300 100 Collector power dissipation (mA) 500 1.2 1 ms* 1000 IC max (continuous) Collector current IC PC – Ta 10 ms* IC max (pulse)* DC operation Ta = 25°C 50 30 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated 10 5 3 0.3 linearly with increase in temperature. VCEO max Tested without a substrate. 1 3 10 Collector-emitter voltage 30 100 (1) Mounted on a ceramic 1.0 substrate (250 mm2 × 0.8 t) (2) No heat sink 0.8 0.6 (2) 0.4 0.2 0 0 300 (1) 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) VCE (V) 3 2009-12-21 2SC2884 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2009-12-21