Cypress CY7C2570KV18-450BZXC 72-mbit ddr-ii sram 2-word burst architecture Datasheet

PRELIMINARY
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
72-Mbit DDR-II+ SRAM 2-Word Burst
Architecture (2.5 Cycle Read Latency) with ODT
Features
Configurations
■
72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)
With Read Cycle Latency of 2.5 cycles:
■
550 MHz clock for high bandwidth
CY7C2566KV18 – 8M x 8
■
2-word burst for reducing address bus frequency
CY7C2577KV18 – 8M x 9
■
Double Data Rate (DDR) interfaces
(data transferred at 1100 MHz) at 550 MHz
CY7C2570KV18 – 2M x 36
■
Available in 2.5 clock cycle latency
■
Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■
Echo clocks (CQ and CQ) simplify data capture in high speed
systems
■
Data valid pin (QVLD) to indicate valid data on the output
■
On-Die Termination (ODT) feature
❐ Supported for D[x:0], BWS[x:0], and K/K inputs
■
Synchronous internally self-timed writes
■
DDR-II+ operates with 2.5 cycle read latency when DOFF is
asserted HIGH
■
Operates similar to DDR-I device with 1 cycle read latency
when DOFF is asserted LOW
■
CY7C2568KV18 – 4M x 18
Functional Description
These devices have an On-Die Termination feature supported
for D[x:0], BWS[x:0], and K/K inputs, which helps eliminate
external termination resistors, reduce cost, reduce board area,
and simplify board routing.
Core VDD = 1.8V ± 0.1V; IO VDDQ = 1.4V to VDD[1]
❐ Supports both 1.5V and 1.8V IO supply
■
HSTL inputs and variable drive HSTL output buffers
■
Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)
■
Offered in both Pb-free and non Pb-free packages
■
JTAG 1149.1 compatible test access port
■
Phase Locked Loop (PLL) for accurate data placement
The CY7C2566KV18, CY7C2577KV18, CY7C2568KV18, and
CY7C2570KV18 are 1.8V Synchronous Pipelined SRAMs
equipped with DDR-II+ architecture. The DDR-II+ consists of an
SRAM core with advanced synchronous peripheral circuitry.
Addresses for read and write are latched on alternate rising
edges of the input (K) clock. Write data is registered on the rising
edges of both K and K. Read data is driven on the rising edges
of K and K. Each address location is associated with two 8-bit
words (CY7C2566KV18), 9-bit words (CY7C2577KV18), 18-bit
words (CY7C2568KV18), or 36-bit words (CY7C2570KV18) that
burst sequentially into or out of the device.
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs (Q, sharing the same
physical pins as the data inputs D) are tightly matched to the two
output echo clocks CQ/CQ, eliminating the need for separately
capturing data from each individual DDR SRAM in the system
design.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
Table 1. Selection Guide
Description
Maximum Operating Frequency
Maximum Operating Current
550 MHz
500 MHz
450 MHz
400 MHz
Unit
550
500
450
400
MHz
x8
740
690
630
580
mA
x9
740
690
630
580
x18
760
700
650
590
x36
970
890
820
750
Note
1. The Cypress QDR-II+ devices surpass the QDR consortium specification and can support VDDQ = 1.4V to VDD.
Cypress Semiconductor Corporation
Document Number: 001-15889 Rev. *D
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised April 24, 2009
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CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELIMINARY
Logic Block Diagram (CY7C2566KV18)
Write
Reg
DOFF
Read Add. Decode
CLK
Gen.
K
4M x 8 Array
K
Write
Reg
4M x 8 Array
Address
Register
LD
Write Add. Decode
22
A(21:0)
8
Output
Logic
Control
R/W
Read Data Reg.
16
VREF
R/W
NWS[1:0]
Control
Logic
8
Reg.
8
CQ
Reg. 8
CQ
8
Reg.
DQ[7:0]
8
QVLD
Logic Block Diagram (CY7C2577KV18)
Write
Reg
CLK
Gen.
DOFF
VREF
R/W
BWS[0]
Read Add. Decode
K
4M x 9 Array
K
Write
Reg
4M x 9 Array
LD
Address
Register
Write Add. Decode
22
A(21:0)
9
Output
Logic
Control
R/W
Read Data Reg.
18
Control
Logic
9
9
Reg.
Reg. 9
Reg.
9
CQ
CQ
9
DQ[8:0]
QVLD
Document Number: 001-15889 Rev. *D
Page 2 of 28
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PRELIMINARY
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
Logic Block Diagram (CY7C2568KV18)
Write
Reg
CLK
Gen.
DOFF
R/W
BWS[1:0]
18
Output
Logic
Control
R/W
Read Data Reg.
36
VREF
Read Add. Decode
K
2M x 18 Array
K
Write
Reg
2M x 18 Array
LD
Address
Register
Write Add. Decode
21
A(20:0)
Control
Logic
18
18
Reg.
Reg. 18
Reg.
18
CQ
CQ
18
DQ[17:0]
QVLD
Logic Block Diagram (CY7C2570KV18)
Write
Reg
CLK
Gen.
DOFF
VREF
R/W
BWS[3:0]
Read Add. Decode
K
1M x 36 Array
K
Write
Reg
1M x 36 Array
LD
Address
Register
Write Add. Decode
20
A(19:0)
36
Output
Logic
Control
R/W
Read Data Reg.
72
Control
Logic
36
36
Reg.
Reg. 36
Reg.
36
CQ
CQ
36
DQ[35:0]
QVLD
Document Number: 001-15889 Rev. *D
Page 3 of 28
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CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELIMINARY
Pin Configuration
The pin configuration for CY7C2566KV18, CY7C2577KV18, CY7C2568KV18, and CY7C2570KV18 follow. [2]
165-Ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C2566KV18 (8M x 8)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
A
A
R/W
NWS1
K
NC/144M
LD
A
A
CQ
B
NC
NC
NC
A
NC/288M
K
NWS0
A
NC
NC
DQ3
C
NC
NC
NC
VSS
A
A
A
VSS
NC
NC
NC
D
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
DQ4
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ2
F
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
G
NC
NC
DQ5
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ1
NC
K
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
L
NC
DQ6
NC
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ0
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
N
NC
NC
NC
VSS
A
A
A
VSS
NC
NC
NC
P
NC
NC
DQ7
A
A
QVLD
A
A
NC
NC
NC
R
TDO
TCK
A
A
A
ODT
A
A
A
TMS
TDI
CY7C2577KV18 (8M x 9)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
A
A
R/W
NC
K
NC/144M
LD
A
A
CQ
B
NC
NC
NC
A
NC/288M
K
BWS0
A
NC
NC
DQ3
C
NC
NC
NC
VSS
A
A
A
VSS
NC
NC
NC
D
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
DQ4
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ2
F
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
G
NC
NC
DQ5
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ1
NC
K
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
L
NC
DQ6
NC
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ0
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
N
NC
NC
NC
VSS
A
A
A
VSS
NC
NC
NC
P
NC
NC
DQ7
A
A
QVLD
A
A
NC
NC
DQ8
R
TDO
TCK
A
A
A
ODT
A
A
A
TMS
TDI
Note
2. NC/144M and NC/288M are not connected to the die and can be tied to any voltage level.
Document Number: 001-15889 Rev. *D
Page 4 of 28
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CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELIMINARY
Pin Configuration
(continued)
The pin configuration for CY7C2566KV18, CY7C2577KV18, CY7C2568KV18, and CY7C2570KV18 follow. [2]
165-Ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C2568KV18 (4M x 18)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
A
A
R/W
BWS1
K
NC/144M
LD
A
A
CQ
B
NC
DQ9
NC
A
NC/288M
K
BWS0
A
NC
NC
DQ8
C
NC
NC
NC
VSS
A
NC
A
VSS
NC
DQ7
NC
D
NC
NC
DQ10
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
DQ11
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ6
F
NC
DQ12
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ5
G
NC
NC
DQ13
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ4
NC
K
NC
NC
DQ14
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ3
L
NC
DQ15
NC
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ2
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
DQ1
NC
N
NC
NC
DQ16
VSS
A
A
A
VSS
NC
NC
NC
P
NC
NC
DQ17
A
A
QVLD
A
A
NC
NC
DQ0
R
TDO
TCK
A
A
A
ODT
A
A
A
TMS
TDI
CY7C2570KV18 (2M x 36)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
NC/144M
A
R/W
BWS2
K
BWS1
LD
A
A
CQ
B
NC
DQ27
DQ18
A
BWS3
K
BWS0
A
NC
NC
DQ8
C
NC
NC
DQ28
VSS
A
NC
A
VSS
NC
DQ17
DQ7
D
NC
DQ29
DQ19
VSS
VSS
VSS
VSS
VSS
NC
NC
DQ16
E
NC
NC
DQ20
VDDQ
VSS
VSS
VSS
VDDQ
NC
DQ15
DQ6
F
NC
DQ30
DQ21
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ5
G
NC
DQ31
DQ22
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ14
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
DQ32
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ13
DQ4
K
NC
NC
DQ23
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ12
DQ3
L
NC
DQ33
DQ24
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ2
M
NC
NC
DQ34
VSS
VSS
VSS
VSS
VSS
NC
DQ11
DQ1
N
NC
DQ35
DQ25
VSS
A
A
A
VSS
NC
NC
DQ10
P
NC
NC
DQ26
A
A
QVLD
A
A
NC
DQ9
DQ0
R
TDO
TCK
A
A
A
ODT
A
A
A
TMS
TDI
Document Number: 001-15889 Rev. *D
Page 5 of 28
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PRELIMINARY
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
Table 2. Pin Definitions
Pin Name
IO
Pin Description
DQ[x:0]
Input Output- Data Input Output Signals. Inputs are sampled on the rising edge of K and K clocks during valid write
Synchronous operations. These pins drive out the requested data when the read operation is active. Valid data is driven
out on the rising edge of both the K and K clocks during read operations. When read access is deselected,
Q[x:0] are automatically tri-stated.
CY7C2566KV18 − DQ[7:0]
CY7C2577KV18 − DQ[8:0]
CY7C2568KV18 − DQ[17:0]
CY7C2570KV18 − DQ[35:0]
LD
InputSynchronous Load. Sampled on the rising edge of the K clock. This input is brought LOW when a bus
Synchronous cycle sequence is defined. This definition includes address and read/write direction. All transactions
operate on a burst of 2 data. LD must meet the setup and hold times around edge of K.
NWS0,
NWS1
InputNibble Write Select 0, 1 − Active LOW (CY7C2566KV18 only). Sampled on the rising edge of the K
Synchronous and K clocks during write operations. Used to select which nibble is written into the device during the
current portion of the write operations. Nibbles not written remain unaltered.
NWS0 controls D[3:0] and NWS1 controls D[7:4].
All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select
ignores the corresponding nibble of data and it is not written into the device.
BWS0,
BWS1,
BWS2,
BWS3
InputByte Write Select 0, 1, 2, and 3 − Active LOW. Sampled on the rising edge of the K and K clocks during
Synchronous write operations. Used to select which byte is written into the device during the current portion of the write
operations. Bytes not written remain unaltered.
CY7C2577KV18 − BWS0 controls D[8:0]
CY7C2568KV18 − BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C2570KV18 − BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3 controls
D[35:27].
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
ignores the corresponding byte of data and it is not written into the device.
A
InputAddress Inputs. Sampled on the rising edge of the K clock during active read and write operations. These
Synchronous address inputs are multiplexed for both read and write operations. Internally, the device is organized as
8M x 8 (2 arrays each of 4M x 8) for CY7C2566KV18 and 8M x 9 (2 arrays each of 4M x9) for
CY7C2577KV18, 4M x 18 (2 arrays each of 2M x 18) for CY7C2568KV18, and 2M x 36 (2 arrays each
of 1M x 36) for CY7C2570KV18.
R/W
InputSynchronous Read or Write input. When LD is LOW, this input designates the access type (read when
Synchronous R/W is HIGH, write when R/W is LOW) for loaded address. R/W must meet the setup and hold times
around edge of K.
QVLD
Valid output
indicator
Valid Output Indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and CQ.
ODT [3]
On-Die
Termination
input pin
On-Die Termination Input. This pin is used for On-Die termination of the input signals. ODT range
selection is made during power up initialization. A LOW on this pin selects a low range that follows RQ/3.33
for 175Ω < RQ < 350Ω (where RQ is the resistor tied to ZQ pin). A HIGH on this pin selects a high range
that follows RQ/1.66 for 175Ω < RQ < 250Ω (where RQ is the resistor tied to ZQ pin). When left floating,
a high range termination value is selected by default.
K
Input Clock
Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q[x:0]. All accesses are initiated on the rising edge of K.
K
Input Clock
Negative Input Clock Input. K is used to capture synchronous data being presented to the device and
to drive out data through Q[x:0].
Note
3. On-Die Termination (ODT) feature is supported for D[x:0], BWS[x:0], and K/K inputs.
Document Number: 001-15889 Rev. *D
Page 6 of 28
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PRELIMINARY
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
Table 2. Pin Definitions (continued)
Pin Name
IO
Pin Description
CQ
Echo Clock
Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock
(K) of the DDR-II+. The timing for the echo clocks is shown in the Switching Characteristics on page 23.
CQ
Echo Clock
Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock
(K) of the DDR-II+. The timing for the echo clocks is shown in the Switching Characteristics on page 23.
ZQ
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus
impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected
between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which enables the
minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
DOFF
Input
PLL Turn Off − Active LOW. Connecting this pin to ground turns off the PLL inside the device. The timing
in the PLL turned off operation differs from those listed in this data sheet. For normal operation, this pin
can be connected to a pull up through a 10 KΩ or less pull up resistor. The device behaves in DDR-I
mode when the PLL is turned off. In this mode, the device can be operated at a frequency of up to 167
MHz with DDR-I timing.
TDO
Output
TCK
Input
TCK Pin for JTAG.
TDI
Input
TDI Pin for JTAG.
TMS
Input
TMS Pin for JTAG.
NC
N/A
Not Connected to the Die. Can be tied to any voltage level.
NC/144M
Input
Not Connected to the Die. Can be tied to any voltage level.
NC/288M
Input
Not Connected to the Die. Can be tied to any voltage level.
VREF
VDD
VSS
VDDQ
InputReference
TDO for JTAG.
Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC
measurement points.
Power Supply Power Supply Inputs to the Core of the Device.
Ground
Ground for the Device.
Power Supply Power Supply Inputs for the Outputs of the Device.
Document Number: 001-15889 Rev. *D
Page 7 of 28
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PRELIMINARY
Functional Overview
The CY7C2566KV18, CY7C2577KV18, CY7C2568KV18, and
CY7C2570KV18 are synchronous pipelined Burst SRAMs
equipped with a DDR interface, which operates with a read
latency of two and half cycles when DOFF pin is tied HIGH.
When DOFF pin is set LOW or connected to VSS the device
behaves in DDR-I mode with a read latency of one clock cycle.
Accesses are initiated on the rising edge of the positive input
clock (K). All synchronous input and output timing is referenced
from the rising edge of the input clocks (K and K).
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the rising edge of the input clocks (K and K). All
synchronous data outputs (Q[x:0]) pass through output registers
controlled by the rising edge of the input clocks (K and K).
All synchronous control (R/W, LD, NWS[X:0], BWS[X:0]) inputs
pass through input registers controlled by the rising edge of the
input clock (K).
CY7C2568KV18 is described in the following sections. The
same basic descriptions apply to CY7C2566KV18,
CY7C2577KV18, and CY7C2570KV18.
Read Operations
The CY7C2568KV18 is organized internally as two arrays of 2M
x 18. Accesses are completed in a burst of 2 sequential 18-bit
data words. Read operations are initiated by asserting R/W
HIGH and LD LOW at the rising edge of the positive input clock
(K). The address presented to the address inputs is stored in the
read address register. Following the next two K clock rise, the
corresponding 18-bit word of data from this address location is
driven onto the Q[17:0] using K as the output timing reference. On
the subsequent rising edge of K, the next 18-bit data word is
driven onto the Q[17:0]. The requested data is valid 0.45 ns from
the rising edge of the input clock (K and K). To maintain the
internal logic, each read access must be allowed to complete.
Read accesses can be initiated on every rising edge of the
positive input clock (K).
When read access is deselected, the CY7C2568KV18 first
completes the pending read transactions. Synchronous internal
circuitry automatically tri-states the output following the next
rising edge of the negative input clock (K). This enables for a
transition between devices without the insertion of wait states in
a depth expanded memory.
Write Operations
Write operations are initiated by asserting R/W LOW and LD
LOW at the rising edge of the positive input clock (K). The
address presented to address inputs is stored in the write
address register. On the following K clock rise, the data
presented to D[17:0] is latched and stored into the 18-bit write
data register, provided BWS[1:0] are both asserted active. On the
subsequent rising edge of the negative input clock (K) the information presented to D[17:0] is also stored into the write data
register, provided BWS[1:0] are both asserted active. The 36 bits
Document Number: 001-15889 Rev. *D
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
of data are then written into the memory array at the specified
location. Write accesses can be initiated on every rising edge of
the positive input clock (K). Doing so pipelines the data flow such
that 18 bits of data can be transferred into the device on every
rising edge of the input clocks (K and K).
When the write access is deselected, the device ignores all
inputs after the pending write operations have been completed.
Byte Write Operations
Byte write operations are supported by the CY7C2568KV18. A
write operation is initiated as described in the Write Operations
section. The bytes that are written are determined by BWS0 and
BWS1, which are sampled with each set of 18-bit data words.
Asserting the appropriate Byte Write Select input during the data
portion of a write latches the data being presented and writes it
into the device. Deasserting the Byte Write Select input during
the data portion of a write enables the data stored in the device
for that byte to remain unaltered. This feature can be used to
simplify read, modify, or write operations to a byte write
operation.
DDR Operation
The CY7C2568KV18 enables high-performance operation
through high clock frequencies (achieved through pipelining) and
DDR mode of operation. The CY7C2568KV18 requires two No
Operation (NOP) cycle during transition from a read to a write
cycle. At higher frequencies, some applications require third
NOP cycle to avoid contention.
If a read occurs after a write cycle, address and data for the write
are stored in registers. The write information is stored because
the SRAM cannot perform the last word write to the array without
conflicting with the read. The data stays in this register until the
next write cycle occurs. On the first write cycle after the read(s),
the stored data from the earlier write is written into the SRAM
array. This is called a Posted write.
If a read is performed on the same address on which a write is
performed in the previous cycle, the SRAM reads out the most
current data. The SRAM does this by bypassing the memory
array and reading the data from the registers.
Depth Expansion
Depth expansion requires replicating the LD control signal for
each bank. All other control signals can be common between
banks as appropriate.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to allow the SRAM to adjust its output
driver impedance. The value of RQ must be 5x the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175Ω and 350Ω, with VDDQ = 1.5V. The
output impedance is adjusted every 1024 cycles upon power up
to account for drifts in supply voltage and temperature.
Page 8 of 28
[+] Feedback
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELIMINARY
Echo Clocks
Echo clocks are provided on the DDR-II+ to simplify data capture
on high-speed systems. Two echo clocks are generated by the
DDR-II+. CQ is referenced with respect to K and CQ is referenced with respect to K. These are free-running clocks and are
synchronized to the input clock of the DDR-II+. The timing for the
echo clocks is shown in the Switching Characteristics on page
23.
initialization. A LOW on this pin selects a low range that follows
RQ/3.33 for 175Ω < RQ < 350Ω (where RQ is the resistor tied to
ZQ pin). A HIGH on this pin selects a high range that follows
RQ/1.66 for 175Ω < RQ < 250Ω (where RQ is the resistor tied to
ZQ pin). When left floating, a high range termination value is
selected by default. For a detailed description on the ODT implementation, refer to the application note, On-Die Termination for
QDRII+/DDRII+ SRAMs.
Valid Data Indicator (QVLD)
PLL
QVLD is provided on the DDR-II+ to simplify data capture on high
speed systems. The QVLD is generated by the DDR-II+ device
along with data output. This signal is also edge aligned with the
echo clock and follows the timing of any data pin. This signal is
asserted half a cycle before valid data arrives.
These chips use a PLL that is designed to function between 120
MHz and the specified maximum clock frequency. During power
up, when the DOFF is tied HIGH, the PLL is locked after 20 μs
of stable clock. The PLL can also be reset by slowing or stopping
the input clock K and K for a minimum of 30 ns. However, it is
not necessary to reset the PLL to lock to the desired frequency.
The PLL automatically locks 20 μs after a stable clock is
presented. The PLL may be disabled by applying ground to the
DOFF pin. When the PLL is turned off, the device behaves in
DDR-I mode (with one cycle latency and a longer access time).
For information, refer to the application note, PLL Considerations
in QDRII/DDRII/QDRII+/DDRII+.
On-Die Termination (ODT)
These devices have an On-Die Termination feature for Data
inputs (D[x:0]), Byte Write Selects (BWS[x:0]), and Input Clocks (K
and K). The termination resistors are integrated within the chip.
The ODT range selection is enabled through ball R6 (ODT pin).
The ODT termination tracks value of RQ where RQ is the resistor
tied to the ZQ pin. ODT range selection is made during power up
Application Example
Figure 1 shows two DDR-II+ used in an application.
Figure 1. Application Example
DQ
A
SRAM#1
LD R/W BWS
ZQ
ODT
CQ/CQ
K K
R = 250ohms
DQ
A
SRAM#2
LD R/W BWS
ZQ
ODT
R = 250ohms
CQ/CQ
K K
DQ
Addresses
BUS
LD
MASTER
R/W
(CPU or ASIC)
BWS
Source CLK
Source CLK
Echo Clock1/Echo Clock1
Echo Clock2/Echo Clock2
ODT
Document Number: 001-15889 Rev. *D
Page 9 of 28
[+] Feedback
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELIMINARY
Table 3. Truth Table
The truth table for the CY7C2566KV18, CY7C2577KV18, CY7C2568KV18, and CY7C2570KV18 follow. [4, 5, 6, 7, 8, 9]
Operation
K
LD
R/W
Write Cycle:
Load address; wait one cycle;
input write data on consecutive K and K rising edges.
L-H
L
L
D(A) at K(t + 1) ↑
D(A+1) at K(t + 1) ↑
Read Cycle: (2.5 cycle Latency)
Load address; wait two and half cycles;
read data on consecutive K and K rising edges.
L-H
L
H
Q(A) at K(t + 2)↑
Q(A+1) at K(t + 3) ↑
NOP: No Operation
L-H
H
X
High-Z
High-Z
Stopped
X
X
Previous State
Previous State
Standby: Clock Stopped
DQ
DQ
Table 4. Write Cycle Descriptions
The write cycle description table for CY7C2566KV18 and CY7C2568KV18 follows. [4, 10]
BWS0/ BWS1/
K
K
L
L–H
–
L
L
–
L
H
L–H
L
H
–
H
L
L–H
H
L
–
H
H
L–H
H
H
–
NWS0
NWS1
L
Comments
During the data portion of a write sequence:
CY7C2566KV18 − both nibbles (D[7:0]) are written into the device.
CY7C2568KV18 − both bytes (D[17:0]) are written into the device.
L-H During the data portion of a write sequence:
CY7C2566KV18 − both nibbles (D[7:0]) are written into the device.
CY7C2568KV18 − both bytes (D[17:0]) are written into the device.
–
During the data portion of a write sequence:
CY7C2566KV18 − only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C2568KV18 − only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L–H During the data portion of a write sequence:
CY7C2566KV18 − only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C2568KV18 − only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
–
During the data portion of a write sequence:
CY7C2566KV18 − only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C2568KV18 − only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
L–H During the data portion of a write sequence:
CY7C2566KV18 − only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C2568KV18 − only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
–
No data is written into the devices during this portion of a write operation.
L–H No data is written into the devices during this portion of a write operation.
Notes
4. X = “Don’t Care,” H = Logic HIGH, L = Logic LOW, ↑ represents rising edge.
5. Device powers up deselected with the outputs in a tri-state condition.
6. “A” represents address location latched by the devices when transaction was initiated. A + 1 represents the address sequence in the burst.
7. “t” represents the cycle at which a read/write operation is started. t + 1 and t + 2 are the first and second clock cycles succeeding the “t” clock cycle.
8. Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges as well.
9. It is recommended that K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.
10. Is based on a write cycle that was initiated in accordance with Table 4. NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on different portions of a write
cycle, as long as the setup and hold requirements are achieved.
Document Number: 001-15889 Rev. *D
Page 10 of 28
[+] Feedback
PRELIMINARY
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
Table 5. Write Cycle Descriptions
The write cycle description table for CY7C2577KV18 follows. [4, 10]
BWS0
K
K
Comments
L
L–H
–
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
L
–
L–H
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
H
L–H
–
No data is written into the device during this portion of a write operation.
H
–
L–H
No data is written into the device during this portion of a write operation.
Table 6. Write Cycle Descriptions
The write cycle description table for CY7C2570KV18 follows. [4, 10]
BWS0
BWS1
BWS2
BWS3
K
K
Comments
L
L
L
L
L–H
–
During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
L
L
L
–
L
H
H
H
L–H
L
H
H
H
–
H
L
H
H
L–H
H
L
H
H
–
H
H
L
H
L–H
H
H
L
H
–
H
H
H
L
L–H
H
H
H
L
–
H
H
H
H
L–H
H
H
H
H
–
Document Number: 001-15889 Rev. *D
L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
–
During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Page 11 of 28
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PRELIMINARY
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
IEEE 1149.1 Serial Boundary Scan (JTAG)
Instruction Register
These SRAMs incorporate a serial boundary scan Test Access
Port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8V IO logic levels.
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in Figure 3 on page 15. Upon power up,
the instruction register is loaded with the IDCODE instruction. It
is also loaded with the IDCODE instruction if the controller is
placed in a reset state, as described in the previous section.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternatively
be connected to VDD through a pull up resistor. TDO must be left
unconnected. Upon power up, the device comes up in a reset
state, which does not interfere with the operation of the device.
Test Access Port—Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see Figure 2 on page 14. TDI is
internally pulled up and can be unconnected if the TAP is unused
in an application. TDI is connected to the most significant bit
(MSB) on any register.
Test Data-Out (TDO)
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set LOW (VSS) when
the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.
Table 10 on page 18 shows the order in which the bits are
connected. Each bit corresponds to one of the bumps on the
SRAM package. The MSB of the register is connected to TDI,
and the LSB is connected to TDO.
Identification (ID) Register
The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
of the TAP state machine (see Table 9 on page 17). The output
changes on the falling edge of TCK. TDO is connected to the
least significant bit (LSB) of any register.
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in Table 7 on page 17.
Performing a TAP Reset
TAP Instruction Set
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This Reset does not affect the operation of the
SRAM and can be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a High-Z state.
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Table 9 on page
17. Three of these instructions are listed as RESERVED and
must not be used. The other five instructions are described in this
section in detail.
TAP Registers
Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.
Document Number: 001-15889 Rev. *D
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
Page 12 of 28
[+] Feedback
PRELIMINARY
IDCODE
The IDCODE instruction loads a vendor-specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO pins and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register at
power up or whenever the TAP controller is supplied a
Test-Logic-Reset state.
SAMPLE Z
The SAMPLE Z instruction connects the boundary scan register
between the TDI and TDO pins when the TAP controller is in a
Shift-DR state. The SAMPLE Z command puts the output bus
into a High-Z state until the next command is supplied during the
Update IR state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is captured
in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output undergoes a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This does not harm the device, but
there is no guarantee as to the value that is captured.
Repeatable results may not be possible.
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELOAD places an initial data pattern at the latched parallel
outputs of the boundary scan register cells before the selection
of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required, that is, while the data
captured is shifted out, the preloaded data can be shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO pins. The advantage
of the BYPASS instruction is that it shortens the boundary scan
path when multiple devices are connected together on a board.
EXTEST
The EXTEST instruction drives the preloaded data out through
the system output pins. This instruction also connects the
boundary scan register for serial access between the TDI and
TDO in the Shift-DR controller state.
EXTEST OUTPUT BUS TRI-STATE
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tri-state mode.
The boundary scan register has a special bit located at bit #108.
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it enables the output buffers to drive the
output bus. When LOW, this bit places the output bus into a
High-Z condition.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture setup plus hold
times (tCS and tCH). The SRAM clock input might not be captured
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK captured in the boundary scan register.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that
cell, during the Shift-DR state. During Update-DR, the value
loaded into that shift-register cell latches into the preload
register. When the EXTEST instruction is entered, this bit directly
controls the output Q-bus pins. Note that this bit is preset HIGH
to enable the output when the device is powered up, and also
when the TAP controller is in the Test-Logic-Reset state.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
Reserved
Document Number: 001-15889 Rev. *D
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Page 13 of 28
[+] Feedback
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELIMINARY
The state diagram for the TAP controller follows. [11]
Figure 2. TAP Controller State Diagram
1
TEST-LOGIC
RESET
0
0
TEST-LOGIC/
IDLE
1
SELECT
DR-SCAN
1
1
SELECT
IR-SCAN
0
0
1
1
CAPTURE-DR
CAPTURE-IR
0
0
SHIFT-DR
0
SHIFT-IR
1
1
EXIT1-DR
1
EXIT1-IR
0
0
PAUSE-IR
1
0
1
EXIT2-DR
0
EXIT2-IR
1
1
UPDATE-IR
UPDATE-DR
1
1
0
PAUSE-DR
0
0
0
1
0
Note
11. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document Number: 001-15889 Rev. *D
Page 14 of 28
[+] Feedback
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELIMINARY
Figure 3. TAP Controller Block Diagram
0
Bypass Register
2
Selection
Circuitry
TDI
1
0
Selection
Circuitry
Instruction Register
31
30
29
.
.
2
1
0
1
0
TDO
Identification Register
108
.
.
.
.
2
Boundary Scan Register
TCK
TAP Controller
TMS
TAP Electrical Characteristics
Over the Operating Range [12, 13, 14]
Parameter
Description
Test Conditions
Min
Max
Unit
VOH1
Output HIGH Voltage
IOH = −2.0 mA
1.4
V
VOH2
Output HIGH Voltage
IOH = −100 μA
1.6
V
VOL1
Output LOW Voltage
IOL = 2.0 mA
0.4
V
VOL2
Output LOW Voltage
IOL = 100 μA
0.2
V
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IX
Input and Output Load Current
0.65VDD VDD + 0.3
GND ≤ VI ≤ VDD
V
–0.3
0.35VDD
V
–5
5
μA
Notes
12. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics Table.
13. Overshoot: VIH(AC) < VDDQ + 0.3V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > −0.3V (Pulse width less than tCYC/2).
14. All Voltage referenced to Ground.
Document Number: 001-15889 Rev. *D
Page 15 of 28
[+] Feedback
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELIMINARY
TAP AC Switching Characteristics
Over the Operating Range [15, 16]
Parameter
Description
Min
Max
Unit
20
MHz
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH
20
ns
tTL
TCK Clock LOW
20
ns
tTMSS
TMS Setup to TCK Clock Rise
5
ns
tTDIS
TDI Setup to TCK Clock Rise
5
ns
tCS
Capture Setup to TCK Rise
5
ns
tTMSH
TMS Hold after TCK Clock Rise
5
ns
tTDIH
TDI Hold after Clock Rise
5
ns
tCH
Capture Hold after Clock Rise
5
ns
50
ns
Setup Times
Hold Times
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
10
0
ns
ns
TAP Timing and Test Conditions
Figure 4 shows the TAP timing and test conditions. [16]
Figure 4. TAP Timing and Test Conditions
0.9V
ALL INPUT PULSES
1.8V
50Ω
0.9V
TDO
0V
Z0 = 50Ω
(a)
CL = 20 pF
tTH
GND
tTL
Test Clock
TCK
tTCYC
tTMSH
tTMSS
Test Mode Select
TMS
tTDIS
tTDIH
Test Data In
TDI
Test Data Out
TDO
tTDOV
tTDOX
Notes
15. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
16. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
Document Number: 001-15889 Rev. *D
Page 16 of 28
[+] Feedback
PRELIMINARY
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
Table 7. Identification Register Definitions
Instruction Field
Value
CY7C2566KV18
CY7C2577KV18
CY7C2568KV18
CY7C2570KV18
000
000
000
000
Revision Number
(31:29)
Description
Version number.
Cypress Device ID 11010111000000100 11010111000001100 11010111000010100 11010111000100100 Defines the type of
(28:12)
SRAM.
Cypress JEDEC ID
(11:1)
00000110100
00000110100
00000110100
00000110100
1
1
1
1
ID Register
Presence (0)
Allows unique
identification of
SRAM vendor.
Indicates the
presence of an ID
register.
Table 8. Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary Scan
109
Table 9. Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the input and output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the input and output contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the input and output ring contents. Places the boundary scan register between TDI
and TDO. Does not affect the SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operation.
Document Number: 001-15889 Rev. *D
Page 17 of 28
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PRELIMINARY
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
Table 10. Boundary Scan Order
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
0
6R
28
10G
56
6A
84
1J
1
6P
29
9G
57
5B
85
2J
2
6N
30
11F
58
5A
86
3K
3
7P
31
11G
59
4A
87
3J
4
7N
32
9F
60
5C
88
2K
5
7R
33
10F
61
4B
89
1K
6
8R
34
11E
62
3A
90
2L
7
8P
35
10E
63
2A
91
3L
8
9R
36
10D
64
1A
92
1M
9
11P
37
9E
65
2B
93
1L
10
10P
38
10C
66
3B
94
3N
11
10N
39
11D
67
1C
95
3M
12
9P
40
9C
68
1B
96
1N
13
10M
41
9D
69
3D
97
2M
14
11N
42
11B
70
3C
98
3P
15
9M
43
11C
71
1D
99
2N
16
9N
44
9B
72
2C
100
2P
17
11L
45
10B
73
3E
101
1P
18
11M
46
11A
74
2D
102
3R
19
9L
47
10A
75
2E
103
4R
20
10L
48
9A
76
1E
104
4P
21
11K
49
8B
77
2F
105
5P
22
10K
50
7C
78
3F
106
5N
23
9J
51
6C
79
1G
107
5R
24
9K
52
8A
80
1F
108
Internal
25
10J
53
7A
81
3G
26
11J
54
7B
82
2G
27
11H
55
6B
83
1H
Document Number: 001-15889 Rev. *D
Page 18 of 28
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CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELIMINARY
Power Up Sequence in DDR-II+ SRAM
PLL Constraints
DDR-II+ SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.
■
PLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as tKC Var.
■
The PLL functions at frequencies down to 120 MHz.
■
If the input clock is unstable and the PLL is enabled, then the
PLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide 20 μs of stable clock to
relock to the desired clock frequency.
Power Up Sequence
■
Apply power and drive DOFF either HIGH or LOW (All other
inputs can be HIGH or LOW).
❐ Apply VDD before VDDQ.
❐ Apply VDDQ before VREF or at the same time as VREF.
❐ Drive DOFF HIGH.
■
Provide stable DOFF (HIGH), power and clock (K, K) for 20 μs
to lock the PLL
~
~
Figure 5. Power Up Waveforms
K
K
~
~
Unstable Clock
> 20Ps Stable clock
Start Normal
Operation
Clock Start (Clock Starts after V DD / V DDQ Stable)
VDD / VDDQ
DOFF
Document Number: 001-15889 Rev. *D
V DD / V DDQ Stable (< +/- 0.1V DC per 50ns )
Fix HIGH (or tie to VDDQ)
Page 19 of 28
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CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELIMINARY
Maximum Ratings
Current into Outputs (LOW) ........................................ 20 mA
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V
Latch up Current..................................................... >200 mA
Operating Range
Ambient Temperature with Power Applied.. –55°C to +125°C
Supply Voltage on VDD Relative to GND ........–0.5V to +2.9V
Range
Supply Voltage on VDDQ Relative to GND.......–0.5V to +VDD
Commercial
DC Applied to Outputs in High-Z ......... –0.5V to VDDQ + 0.3V
Industrial
Ambient
Temperature (TA)
VDD [17]
VDDQ [17]
0°C to +70°C
1.8 ± 0.1V
1.4V to
VDD
–40°C to +85°C
DC Input Voltage [13].............................. –0.5V to VDD + 0.3V
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range [14]
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
1.7
1.8
1.9
V
1.4
1.5
VDD
V
VDDQ/2 + 0.12
V
VDD
Power Supply Voltage
VDDQ
IO Supply Voltage
VOH
Output HIGH Voltage
Note 18
VDDQ/2 – 0.12
VOL
Output LOW Voltage
Note 19
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOH(LOW)
Output HIGH Voltage
IOH = −0.1 mA, Nominal Impedance
VDDQ – 0.2
VDDQ
V
VOL(LOW)
Output LOW Voltage
IOL = 0.1 mA, Nominal Impedance
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IX
Input Leakage Current
GND ≤ VI ≤ VDDQ
IOZ
Output Leakage Current
GND ≤ VI ≤ VDDQ, Output Disabled
VREF
Input Reference Voltage [20] Typical Value = 0.75V
IDD
[21]
VDD Operating Supply
VDD = Max,
IOUT = 0 mA,
f = fMAX = 1/tCYC
VSS
0.2
V
VREF + 0.1
VDDQ + 0.15
V
–0.15
VREF – 0.1
V
−2
2
μA
−2
2
μA
0.95
V
(x8)
740
mA
(x9)
740
(x18)
760
(x36)
970
(x8)
690
(x9)
690
(x18)
700
(x36)
890
(x8)
630
(x9)
630
(x18)
650
(x36)
820
(x8)
580
(x9)
580
(x18)
590
(x36)
750
0.68
550 MHz
500 MHz
450 MHz
400 MHz
0.75
mA
mA
mA
Notes
17. Power up: assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
18. Outputs are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
19. Outputs are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
20. VREF(min) = 0.68V or 0.46VDDQ, whichever is larger, VREF(max) = 0.95V or 0.54VDDQ, whichever is smaller.
21. The operation current is calculated with 50% read cycle and 50% write cycle.
Document Number: 001-15889 Rev. *D
Page 20 of 28
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CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELIMINARY
Electrical Characteristics
(continued)
DC Electrical Characteristics
Over the Operating Range [14]
Parameter
ISB1
Description
Automatic Power down
Current
Test Conditions
Max VDD,
Both Ports Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fMAX = 1/tCYC,
Inputs Static
550 MHz
500 MHz
450 MHz
400 MHz
Max
Unit
(x8)
Min
Typ
380
mA
(x9)
380
(x18)
380
(x36)
380
(x8)
360
(x9)
360
(x18)
360
(x36)
360
(x8)
340
(x9)
340
(x18)
340
(x36)
340
(x8)
320
(x9)
320
(x18)
320
(x36)
320
mA
mA
mA
AC Electrical Characteristics
Over the Operating Range [13]
Min
Typ
Max
Unit
VIH
Parameter
Input HIGH Voltage
Description
Test Conditions
VREF + 0.2
–
VDDQ + 0.24
V
VIL
Input LOW Voltage
–0.24
–
VREF – 0.2
V
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
CIN
Input Capacitance
CO
Output Capacitance
Test Conditions
Max
Unit
2
pF
3
pF
TA = 25°C, f = 1 MHz, VDD = 1.8V, VDDQ = 1.5V
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Parameter
ΘJA
ΘJC
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Document Number: 001-15889 Rev. *D
165 FBGA
Package
Unit
With Still Air
(0m/s)
13.7
°C/W
With Air flow
(1m/s)
12.56
Test Conditions
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, in accordance with EIA/JESD51.
3.73
°C/W
Page 21 of 28
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PRELIMINARY
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
Figure 6. AC Test Loads and Waveforms
VREF = 0.75V
VREF
0.75V
VREF
OUTPUT
Z0 = 50Ω
Device
Under
Test
ZQ
RL = 50Ω
VREF = 0.75V
R = 50Ω
ALL INPUT PULSES
1.25V
0.75V
OUTPUT
Device
Under
Test ZQ
RQ =
250Ω
(a)
0.75V
INCLUDING
JIG AND
SCOPE
5 pF
[22]
0.25V
Slew Rate = 2 V/ns
RQ =
250Ω
(b)
Note
22. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, VREF = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input pulse
levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 6 on page 22.
Document Number: 001-15889 Rev. *D
Page 22 of 28
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PRELIMINARY
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
Switching Characteristics
Over the Operating Range [22, 23]
Cypress Consortium
Parameter Parameter
tPOWER
tCYC
tKH
tKL
tKHKH
tKHKH
tKHKL
tKLKH
tKHKH
Setup Times
tSA
tAVKH
tSC
tSCDDR
tIVKH
tIVKH
tSD
tDVKH
Hold Times
tHA
tKHAX
tHC
tKHIX
tHCDDR
tKHIX
tHD
tKHDX
Output Times
tCO
tCHQV
tDOH
tCHQX
tCCQO
tCQOH
tCQD
tCQDOH
tCQH
tCQHCQH
tCHCQV
tCHCQX
tCQHQV
tCQHQX
tCQHCQL
tCQHCQH
tCHZ
tCHQZ
tCHQX1
tCLZ
tQVLD
tCQHQVLD
PLL Timing
tKC Var
tKC Var
tKC lock
tKC lock
tKC Reset tKC Reset
Description
VDD(Typical) to the First Access [24]
K Clock Cycle Time
Input Clock (K/K) HIGH
Input Clock (K/K) LOW
K Clock Rise to K Clock Rise
(rising edge to rising edge)
Address Setup to K Clock Rise
Control Setup to K Clock Rise (LD, R/W)
Double Data Rate Control Setup to Clock (K/K)
Rise (BWS0, BWS1, BWS2, BWS3)
D[X:0] Setup to Clock (K/K) Rise
Address Hold after K Clock Rise
Control Hold after K Clock Rise (LD, R/W)
Double Data Rate Control Hold after Clock (K/K)
Rise (BWS0, BWS1, BWS2, BWS3)
D[X:0] Hold after Clock (K/K) Rise
550 MHz
500 MHz
450 MHz
400 MHz
Min Max Min Max Min Max Min Max
1
–
1
–
1
–
1
–
1.81 8.4 2.0 8.4 2.2 8.4 2.5 8.4
0.4
–
0.4
–
0.4
–
0.4
–
0.4
–
0.4
–
0.4
–
0.4
–
0.77
–
0.85
–
0.94
–
1.06
–
Unit
ms
ns
ns
ns
ns
0.23
0.23
–
–
0.25
0.25
–
–
0.275
0.275
–
–
0.4
0.4
–
–
ns
ns
0.18
–
0.20
–
0.22
–
0.28
–
ns
0.18
–
0.20
–
0.22
–
0.28
–
ns
0.23
0.23
0.18
–
–
–
0.25
0.25
0.20
–
–
–
0.275
0.275
0.22
–
–
–
0.4
0.4
0.28
–
–
–
ns
ns
ns
0.18
–
0.20
–
0.22
–
0.28
–
ns
K/K Clock Rise to Data Valid
Data Output Hold after Output K/K Clock Rise
(Active to Active)
–
0.29
–
0.33
–
0.37
–
0.45
–0.29 – –0.33 – –0.37 – –0.45 –
ns
ns
K/K Clock Rise to Echo Clock Valid
Echo Clock Hold after K/K Clock Rise
Echo Clock High to Data Valid
Echo Clock High to Data Invalid
Output Clock (CQ/CQ) HIGH [25]
CQ Clock Rise to CQ Clock Rise
(rising edge to rising edge) [25]
Clock (K/K) Rise to High-Z
(Active to High-Z) [26, 27]
Clock (K/K) Rise to Low-Z [26, 27]
Echo Clock High to QVLD Valid [28]
–
0.29
–
0.33
–
0.37
–
0.45
–0.29 – –0.33 – –0.37 – –0.45 –
–
0.15
–
0.15
–
0.15
–
0.20
–0.15 – –0.15 – –0.15 – –0.20 –
0.655 –
0.75
–
0.85
–
1.00
–
0.655 –
0.75
–
0.85
–
1.00
–
ns
ns
ns
ns
ns
ns
Clock Phase Jitter
PLL Lock Time (K)
K Static to PLL Reset [29]
–
0.45
ns
–0.29 – –0.33 – –0.37 – –0.45 –
–0.15 0.15 –0.15 0.15 –0.15 0.15 –0.20 0.20
ns
ns
–
20
30
0.29
0.15
–
–
–
–
20
30
0.33
0.15
–
–
–
–
20
30
0.37
0.15
–
–
–
–
20
30
0.20
–
–
ns
μs
ns
Notes
23. When a part with a maximum frequency above 400 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being
operated and outputs data with the output timings of that frequency range.
24. This part has an internal voltage regulator; tPOWER is the time that the power is supplied above VDD min initially before a read or write operation can be initiated.
25. These parameters are extrapolated from the input timing parameters (tCYC/2 - 250 ps, where 250 ps is the internal jitter). These parameters are only guaranteed by
design and are not tested in production.
26. tCHZ, tCLZ are specified with a load capacitance of 5 pF as in (b) of Figure 6 on page 22. Transition is measured ±100 mV from steady-state voltage.
27. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.
28. tQVLD specification is applicable for both rising and falling edges of QVLD signal.
29. Hold to >VIH or <VIL.
Document Number: 001-15889 Rev. *D
Page 23 of 28
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CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELIMINARY
Switching Waveforms
Read/Write/Deselect Sequence [30, 31, 32]
Figure 7. Waveform for 2.5 Cycle Read Latency
NOP
1
READ
2
READ
3
NOP
5
NOP
4
WRITE
7
NOP
6
WRITE
8
READ
9
NOP
10
NOP
11
12
K
t KH
t KHKH
tCYC
t KL
K
LD
tSC t HC
R/W
A
A0
t SA t HA
A1
A2
t QVLD
t QVLD
A3
A4
t QVLD
QVLD
tHD
t HD
tSD
Q00
DQ
tCLZ
(Read Latency = 2.5 Cycles)
Q01 Q10 Q11
t DOH
tCO
t CCQO
tSD
D20 D21
D30
D31
Q40
tCHZ
t CQD
t CQDOH
t CQOH
CQ
t CQOH
t CCQO
tCQH
tCQHCQH
CQ
DON’T CARE
UNDEFINED
Notes
30. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.
31. Outputs are disabled (High-Z) one clock cycle after a NOP.
32. In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded immediately as read results. This note applies to the whole diagram.
Document Number: 001-15889 Rev. *D
Page 24 of 28
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PRELIMINARY
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
Ordering Information
The following table lists all possible speed, package and temperature range options supported for these devices. Note that some
options listed may not be available for order entry. To verify the availability of a specific option, visit the Cypress website at
www.cypress.com and refer to the product summary page at http://www.cypress.com/products or contact your local sales
representative for the status of availability of parts.
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office
closest to you, visit us at http://app.cypress.com/portal/server.pt?space=CommunityPage&control=SetCommunity&CommunityID=
201&PageID=230.
Table 11. Ordering Information
Speed
(MHz)
550
Ordering Code
CY7C2566KV18-550BZC
Package
Diagram
Package Type
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Operating
Range
Commercial
CY7C2577KV18-550BZC
CY7C2568KV18-550BZC
CY7C2570KV18-550BZC
CY7C2566KV18-550BZXC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C2577KV18-550BZXC
CY7C2568KV18-550BZXC
CY7C2570KV18-550BZXC
CY7C2566KV18-550BZI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C2577KV18-550BZI
CY7C2568KV18-550BZI
CY7C2570KV18-550BZI
CY7C2566KV18-550BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C2577KV18-550BZXI
CY7C2568KV18-550BZXI
CY7C2570KV18-550BZXI
500
CY7C2566KV18-500BZC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
CY7C2577KV18-500BZC
CY7C2568KV18-500BZC
CY7C2570KV18-500BZC
CY7C2566KV18-500BZXC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C2577KV18-500BZXC
CY7C2568KV18-500BZXC
CY7C2570KV18-500BZXC
CY7C2566KV18-500BZI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C2577KV18-500BZI
CY7C2568KV18-500BZI
CY7C2570KV18-500BZI
CY7C2566KV18-500BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C2577KV18-500BZXI
CY7C2568KV18-500BZXI
CY7C2570KV18-500BZXI
Document Number: 001-15889 Rev. *D
Page 25 of 28
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PRELIMINARY
CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
Table 11. Ordering Information (continued)
Speed
(MHz)
450
Ordering Code
CY7C2566KV18-450BZC
Package
Diagram
Package Type
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Operating
Range
Commercial
CY7C2577KV18-450BZC
CY7C2568KV18-450BZC
CY7C2570KV18-450BZC
CY7C2566KV18-450BZXC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C2577KV18-450BZXC
CY7C2568KV18-450BZXC
CY7C2570KV18-450BZXC
CY7C2566KV18-450BZI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C2577KV18-450BZI
CY7C2568KV18-450BZI
CY7C2570KV18-450BZI
CY7C2566KV18-450BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C2577KV18-450BZXI
CY7C2568KV18-450BZXI
CY7C2570KV18-450BZXI
400
CY7C2566KV18-400BZC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
CY7C2577KV18-400BZC
CY7C2568KV18-400BZC
CY7C2570KV18-400BZC
CY7C2566KV18-400BZXC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C2577KV18-400BZXC
CY7C2568KV18-400BZXC
CY7C2570KV18-400BZXC
CY7C2566KV18-400BZI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C2577KV18-400BZI
CY7C2568KV18-400BZI
CY7C2570KV18-400BZI
CY7C2566KV18-400BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C2577KV18-400BZXI
CY7C2568KV18-400BZXI
CY7C2570KV18-400BZXI
Document Number: 001-15889 Rev. *D
Page 26 of 28
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CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELIMINARY
Package Diagram
Figure 8. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180
BOTTOM VIEW
PIN 1 CORNER
TOP VIEW
Ø0.05 M C
Ø0.25 M C A B
PIN 1 CORNER
Ø0.50 -0.06
(165X)
+0.14
1
2
3
4
5
6
7
8
9
10
11
11
9
8
7
6
5
4
3
2
1
A
B
B
C
C
1.00
A
D
D
E
F
F
G
G
H
J
14.00
E
15.00±0.10
15.00±0.10
10
H
J
K
L
L
7.00
K
M
M
N
N
P
P
R
R
A
A
1.00
5.00
10.00
B
B
13.00±0.10
13.00±0.10
1.40 MAX.
0.15 C
0.53±0.05
0.25 C
0.15(4X)
NOTES :
SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD)
PACKAGE WEIGHT : 0.475g
JEDEC REFERENCE : MO-216 / DESIGN 4.6C
PACKAGE CODE : BB0AC
0.35±0.06
0.36
SEATING PLANE
C
Document Number: 001-15889 Rev. *D
51-85180-*A
Page 27 of 28
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CY7C2566KV18, CY7C2577KV18
CY7C2568KV18, CY7C2570KV18
PRELIMINARY
Document History Page
Document Title: CY7C2566KV18/CY7C2577KV18/CY7C2568KV18/CY7C2570KV18, 72-Mbit DDR-II+ SRAM 2-Word Burst
Architecture (2.5 Cycle Read Latency) with ODT
Document Number: 001-15889
Rev.
ECN No.
Orig. Of
Change
**
1148585
VKN
Submission Description Of Change
Date
See ECN
New Data Sheet
*A
1739584 VKN/AESA
See ECN
Converted from Advance Information to Preliminary
*B
2088727 VKN/AESA
See ECN
Changed PLL lock time from 2048 cycles to 20 μs
Added footnote #21 related to IDD
Corrected typo in the footnote #25
*C
2612328 VKN/AESA
11/25/08
Changed JTAG ID [31:29] from 001 to 000,
Updated Power-up sequence waveform and its description,
Included Thermal Resistance values,
Changed tKC Var spec from 0.2ns to 0.15ns for 500MHz speed bin,
Changed the package size from 15 x 17 x 1.4 mm to 13 x 15 x 1.4 mm.
*D
2697841 04/24/2009
VKN
Moved to external web
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© Cypress Semiconductor Corporation, 2007-2009. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used
for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use
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Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
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Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-15889 Rev. *D
Revised April 24, 2009
Page 28 of 28
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this document
are the trademarks of their respective holders.
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