CPH5826 Ordering number : ENN7786 CPH5826 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter applications. Composite type with a N-channel sillicon MOSFET (MCH3406) and a schottky barrier diode (SB07-03C) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. • Low reverse current. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 20 ID Drain Current (Pulse) IDP PD Allowable Power Dissipation V ±10 V 3 A PW≤10µs, duty cycle≤1% 12 A Mounted on a ceramic board (600mm2✕0.8mm) 1unit 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 30 V 35 V Average Output Current IO 700 mA Surge Forward Current IFSM [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 5 A Junction Temperature Tj 50Hz sine wave, 1 cycle --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : XC Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62504 TS IM TA-100747 No.7786-1/5 CPH5826 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 VDS=20V, VGS=0 20 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0 VDS=10V, ID=1mA 0.4 yfs RDS(on)1 VDS=10V, ID=1.5A 3.0 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 V 1 µA ±10 µA 1.3 V 63 mΩ 4.9 S ID=1.5A, VGS=4V ID=1A, VGS=2.5V 48 58 82 mΩ 72 110 mΩ Input Capacitance Ciss ID=0.5A, VGS=1.8V VDS=10V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance 280 pF VDS=10V, f=1MHz 60 pF Crss VDS=10V, f=1MHz 38 pF Turn-ON Delay Time td(on) See specified Test Circuit 13 ns Rise Time tr td(off) See specified Test Circuit 35 ns See specified Test Circuit 35 ns tf See specified Test Circuit 25 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=10V, VGS=4V, ID=3A 8.8 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=3A 0.85 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=3A 0.85 Diode Forward Voltage VSD IS=3A, VGS=0 0.82 nC 1.2 V [SBD] Reverse Voltage VR Forward Voltage VF Reverse Current Interterminal Capacitance IR C VR=10V, f=1MHz, 1 cycle Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Package Dimensions unit : mm 2171 VR=15V 2.8 1.6 0.55 V 80 µA 25 pF 10 ns Electrical Connection 5 0.15 3 V 4 3 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.6 4 30 0.2 2.9 5 IR=300µA IF=700mA 0.05 2 Top view 0.6 1 2 0.4 0.4 0.9 0.2 0.95 0.7 1 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 No.7786-2/5 CPH5826 Switching Time Test Circuit trr Test Circuit VDD=10V VIN [SBD] 4V 0V Duty≤10% 50Ω PW=10µs D.C.≤1% 100Ω 10Ω 10µs G 10mA D 100mA ID=1.5A RL=6.67Ω VOUT VIN 100mA [MOSFET] --5V 50Ω ID -- VDS 1.5 V 4.0 [MOSFET] VDS=10V 3.5 1.0 2.5 2.0 1.5 1.0 0.5 0.5 0 25 °C --25°C VGS=1.0V 1.5 3.0 5°C 2.0 ID -- VGS [MOSFET] Drain Current, ID -- A Drain Current, ID -- A 2.5 1.8V 10.0V 4.0V 2.5 V 3.0 trr CPH5826 S Ta= 7 P.G 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Gate-to-Source Voltage, VGS -- V Drain-to-Source Voltage, VDS -- V IT03490 RDS(on) -- VGS [MOSFET] RDS(on) -- Ta 140 1.6 IT03491 [MOSFET] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 120 100 1.0A 1.5A 80 ID=0.5A 40 20 2 4 6 8 10 7 5 yfs -- ID 60 40 20 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C [MOSFET] 140 160 IT03493 IF -- VSD 10 7 5 VDS=10V [MOSFET] VGS=0 3 3 2 °C 25 1.0 7 5 C 5° --2 °C = 75 Ta 3 2 0.1 7 5 2 1.0 7 5 3 2 0.1 7 5 3 3 2 2 0.01 0.001 --40 IT03492 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S Gate-to-Source Voltage, VGS -- V 10 1.8V S= A, VG 5 . 0 V I D= =2.5 VGS .0A, 1 = .0 4 V ID S= .5A, V G 1 = ID 80 0 --60 0 0 100 2 3 5 7 0.01 2 3 5 7 0.1 2 3 Drain Current, ID -- A 5 7 1.0 2 3 IT06996 5°C 25° C --25 °C 60 120 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD -- V 1.1 IT03495 No.7786-3/5 CPH5826 SW Time -- ID 3 [MOSFET] VDD=10V VGS=4V 7 tr td(off) 5 tf 3 2 td(on) 10 7 5 5 Ciss 3 2 100 7 Coss 5 Crss 3 3 2 1.0 0.1 10 2 3 5 7 2 1.0 3 5 7 VGS -- Qg 4.0 0 10 IT03496 Drain Current, ID -- A [MOSFET] 2 VDS=10V ID=3A 3.5 10 7 5 3.0 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V f=1MHz 100 2 2.5 2.0 1.5 1.0 3 2 1.0 7 5 3 2 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 0.9 6 8 10 12 14 16 18 20 Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(600mm2✕0.8mm)1unit 0.01 0.01 10 4 Drain-to-Source Voltage, VDS -- V IT03497 ASO [MOSFET] IDP=12A ≤10µs 10 0µ s 10 ID=3A 1m m s s 10 0 DC ms op er ati on 2 3 IT03498 PD -- Ta 1.0 2 0.1 7 5 3 2 0.5 0 Allowable Power Dissipation, PD -- W [MOSFET] 7 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 Ciss, Coss, Crss -- VDS 1000 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V IT06997 IR -- VR [SBD] [MOSFET] M ou nt 0.8 ed on ac er 0.6 am ic bo ar d( 60 0m 0.4 m2 ✕ 0. 8m m )1 0.2 un it 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT06998 IF -- VF [SBD] 5 5 2 3 5° Ta=12 C Reverse Current, IR -- µA 1000 1.0 7 5 3 0.1 7 5 25°C 25° C 2 Ta= 1 Forward Current, IF -- A 2 3 5 100°C 2 100 75°C 5 2 50°C 10 5 2 25°C 1.0 5 2 0.01 0 0.2 0.4 0.6 Forward Voltage, VF -- V 0.8 1.0 ID00383 2 0.1 0 5 10 15 20 25 Reverse Voltage, VR -- V 30 35 ID00384 No.7786-4/5 PF(AV) -- IO 0.8 (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° 0.6 (4) (3) (2) (1) θ 360° 0.2 Sine wave 0.2 0.4 360° 0.8 0.6 Average Forward Current, IO -- A IFSM -- t Surge Forward Current, IFSM(Peak) -- A 6 [SBD] 100 7 5 3 2 10 7 180° 0 0 C -- VR 2 f=1MHz Rectangular wave 0.4 [SBD] Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W CPH5826 1.0 ID00385 5 1.0 2 3 5 7 10 2 Reverse Voltage, VR -- V 3 5 ID00386 [SBD] Current waveform 50Hz sine wave IS 5 20ms t 4 3 2 1 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00387 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2004. Specifications and information herein are subject to change without notice. PS No.7786-5/5