DMP2042UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ @VGS = -4.5V, TA = +25°C) BVDSS RDS(ON) ID 37mΩ @ VGS = -4.5V -4.6A 49mΩ @ VGS = -2.5V -3.7A Features and Benefits -20V Low QG & QGD Small Footprint Low Profile 0.62mm Height ESD Protected Up To 3KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, Case: U-WLB1010-4 (Type C) Terminal Connections: See Diagram Below making it ideal for high efficiency power management applications. Battery Management Load Switch Battery Protection U-WLB1010-4 (Type C) ESD PROTECTED TO 3kV Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMP2042UCB4-7 Notes: Case U-WLB1010-4 (Type C) Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 2A = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M or M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMP2042UCB4 Document number: DS38665 Rev. 2 - 2 Mar 3 2018 F Apr 4 May 5 2019 G Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 Aug 8 2021 I Sep 9 Oct O 2022 J Nov N Dec D July 2016 © Diodes Incorporated DMP2042UCB4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Continuous Drain Current (Note 5) VGS = -2.5V Pulsed Drain Current (Note 6) Symbol VDSS VGSS ID ID IDM Value -20 -6 -4.6 -3.7 -16 Unit V V A A A Symbol PD RθJA PD RθJA TJ, TSTG Value 0.75 165 1.4 87 -55 to +150 Unit W °C/W W °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS BVGSS IDSS IGSS -20 -6.0 — — — — — — — — -1 -100 V V µA nA VGS = 0V, ID = -250μA VDS = 0V, IG = -250μA VDS = -16V, VGS = 0V VGS = -6V, VDS = 0V VGS(TH) RDS(ON) |YFS| VSD -0.8 37 49 6.6 -0.7 -1.2 45 65 -1.0 V Static Drain-Source On-Resistance -0.4 — — — — VDS = VGS, ID = -250μA VGS = -4.5V, ID =-1A VGS = -2.5V, ID = -1A VDS = -10V, ID = -1A VGS = 0V, IS = -1A CISS COSS CRSS RG RC QG QGS QGD QG(TH) tD(ON) tR tD(OFF) tF QRR tRR — — — — — — — — — — — — — — — 218 148 11 20 5,000 2.5 0.4 0.4 0.2 0.6 0.8 1.4 0.8 2.2 10 — — — — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Series Gate Resistance Series Clamp Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Charge at Vth Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Charge Reverse Recovery Time Notes: mΩ S V Test Condition pF VDS = -10V, VGS = 0V, f = 1.0MHz Ω f = 1MHz, VGS = 0V, VDS = 0V nC VGS = -4.5V, VDS = -10V, ID =-1A µs VDS = -10V, VGS = -2.5V, RG = 10Ω, ID = -1A nC ns VDD = -10V, IF = -1.0A, di/dt =100A/μs 5. Device mounted on FR-4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMP2042UCB4 Document number: DS38665 Rev. 2 - 2 2 of 7 www.diodes.com July 2016 © Diodes Incorporated DMP2042UCB4 10 VGS = -2.0V VGS=-3.0V VGS = -4.5V 8.0 VDS = -5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10.0 VGS = -8.0V VGS = -1.8V 6.0 4.0 VGS = -1.5V 2.0 8 6 4 2 125℃ 85℃ 25℃ -55℃ 150℃ VGS = -1.2V 0.0 0 0 0.4 0.8 1.2 1.6 2 0.4 VDS, DRAIN-SOURCE VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0.07 0.06 VGS = -2.5V 0.05 VGS = -4.5V 0.03 0.02 1 2 3 4 5 6 7 8 9 0.06 VGS = -2.5V, ID = -1.0A 1.2 1.1 VGS = -4.5V, ID = -1.0A 0.9 0.8 0.7 0 25 50 75 100 Document number: DS38665 Rev. 2 - 2 1.8 2 2.2 0.05 125 150 85℃ 0.04 25℃ 0.03 -55℃ 0.02 0.01 2 4 6 8 10 ID, DRAIN CURRENT (A) Figure 4. Typical On-Resistance vs. Drain Current and Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 5. On-Resistance Variation with Junction Temperature DMP2042UCB4 1.6 125℃ 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 -25 1.4 150℃ 10 1.5 -50 1.2 VGS = -4.5V Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 1 1 0.07 ID, DRAIN-SOURCE CURRENT (A) 1.3 0.8 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic Figure 1. Typical Output Characteristic 0.04 0.6 0.08 0.07 0.06 VGS = -2.5V, ID = -1.0A 0.05 0.04 VGS = -4.5V, ID = -1.0A 0.03 0.02 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature 3 of 7 www.diodes.com July 2016 © Diodes Incorporated DMP2042UCB4 5 VGS = 0V 1 4 ID = -1mA Is, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.1 0.9 ID = -250μA 0.8 0.7 0.6 0.5 3 2 TJ = 85oC TJ = 125oC 1 TJ = 25oC TJ = 150oC TJ = -55oC 0.4 -50 -25 0 25 50 75 100 125 150 0 0 TJ, JUNCTION TEMPERATURE (℃) Figure 7. Gate Threshold Variation vs. Junction Temperature 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8.. Diode Forward Voltage vs. Current 1000 4.5 4 Ciss 3.5 100 3 Coss VGS (V) CT, JUNCTION CAPACITANCE (pF) f=1MHz 10 2.5 2 VDS = -10V, ID = -1A 1.5 Crss 1 0.5 1 0 5 10 15 0 20 0 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9: Typical Junction Capacitance 0.5 1 1.5 2 2.5 3 Qg (nC) Figure 10. Gate Charge 400 100 RDS(ON) Limited P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) PW =100µs 10 1 PW =1ms PW =10ms PW =100ms 0.1 0.01 TJ(Max) = 150℃ TC = 25℃ PW =1s Single Pulse PW =10s DUT on 1*MRP Board DC VGS= -4.5V 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. SOA, Safe Operation Area DMP2042UCB4 Document number: DS38665 Rev. 2 - 2 300 Single Pulse RθJA = 167℃/W RθJA(t) = r(t) * RθJA TJ-TA=P * RθJA (t) 200 100 0 0.000010.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 12: Single Pulse Maximum Power Dissipation 4 of 7 www.diodes.com July 2016 © Diodes Incorporated DMP2042UCB4 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 167℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMP2042UCB4 Document number: DS38665 Rev. 2 - 2 5 of 7 www.diodes.com July 2016 © Diodes Incorporated DMP2042UCB4 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-WLB1010-4 (Type C) b(4x) k Pin1 E k1 e e D A2 U-WLB1010-4 (Type C) Dim Min Max Typ A -0.62 -A2 --0.38 b 0.25 0.35 0.30 D 0.92 1.00 0.96 E 0.92 1.00 0.96 e --0.50 k --0.25 k1 --0.25 All Dimensions in mm A Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-WLB1010-4 (Type C) D(4x) C Dimensions C D Value (in mm) 0.500 0.300 C DMP2042UCB4 Document number: DS38665 Rev. 2 - 2 6 of 7 www.diodes.com July 2016 © Diodes Incorporated DMP2042UCB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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