BAQ33 - BAQ35 SMALL SIGNAL SWITCHING DIODES Features ! Silicon Planar Diodes ! Very low reverse current C B Mechanical Data ! ! ! ! ! A Case: SOD-80/LL34, Glass Terminals: Solderable per MIL-STD-202, Method 208 LL34/ SOD-80 Polarity: Cathode Band Weight: 0.05 grams (approx.) Dim Min Max A 3.30 3.70 B 1.30 1.60 C 0.28 0.50 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Test condition Reverse voltage Peak forward surge current Part Symbol Value Unit BAQ33 VR 30 V BAQ34 VR 60 V BAQ35 VR 125 V tp = 1 µs IFSM 2 A IF 200 mA Forward current Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Symbol Value Unit RthJA 500 K/W Tj 175 °C Tstg - 65 to + 175 °C on PC board 50 mm x 50 mm x 1.6 mm Junction temperature Storage temperature range Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Test condition Part Symbol IF = 100 mA VF E ≤ 300 lx, rated VR IR E ≤ 300 lx, rated VR, Tj = 125 °C IR Min Typ. 1 Max Unit 1 V 3 nA 0.5 μA E ≤ 300 lx, VR = 15 V BAQ33 IR 0.5 1 nA E ≤ 300l x, VR = 30 V BAQ34 IR 0.5 1 nA E ≤ 300 lx, VR = 60 V BAQ35 IR 0.5 1 nA IR = 5 µA, tp/T = 0.01, tp= 0.3 ms BAQ33 V(BR) 40 V IR = 5 µA, tp/T = 0.01, tp = 0.3 ms BAQ34 V(BR) 70 V BAQ35 V(BR) 140 VR = 0, f = 1 MHz CD 1 of 2 V 3 pF www.sunmate.tw Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1000 10000 I F - Forward Current (mA) I R - Reverse Current (nA) V R = VRRM 1000 Scattering Limit 100 10 Scattering Limit 10 1 0.1 1 0 94 9079 Tj = 25 °C 100 40 80 120 160 0 200 94 9078 Tj - Junction Temperature (°C) Figure 1. Reverse Current vs. Junction Temperature 2 of 2 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage www.sunmate.tw